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Mosfet Irf

This document provides specifications for the IRFP260N N-channel MOSFET transistor from INCHANGE Semiconductor. Key features include a maximum static drain-source on-resistance of 40mΩ, enhancement mode operation, and 100% avalanche testing. Absolute maximum ratings include a drain-source voltage of 200V, gate-source voltage of ±20V, and continuous drain current of 50A. Thermal characteristics include a maximum channel-to-case thermal resistance of 0.5°C/W and channel-to-ambient thermal resistance of 40°C/W. Electrical characteristics at 25°C include a drain-source breakdown voltage above 200V and gate threshold voltage between 2.0-4.

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46 views

Mosfet Irf

This document provides specifications for the IRFP260N N-channel MOSFET transistor from INCHANGE Semiconductor. Key features include a maximum static drain-source on-resistance of 40mΩ, enhancement mode operation, and 100% avalanche testing. Absolute maximum ratings include a drain-source voltage of 200V, gate-source voltage of ±20V, and continuous drain current of 50A. Thermal characteristics include a maximum channel-to-case thermal resistance of 0.5°C/W and channel-to-ambient thermal resistance of 40°C/W. Electrical characteristics at 25°C include a drain-source breakdown voltage above 200V and gate threshold voltage between 2.0-4.

Uploaded by

hernan
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INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IRFP260N，IIRFP260N

·FEATURES
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·DESCRITION
·Fast switching
·Fully Avalanche Rated

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 200 V

VGS Gate-Source Voltage ±20 V

ID Drain Current-Continuous 50 A

IDM Drain Current-Single Pulsed 200 A

PD Total Dissipation @TC=25℃ 300 W

Tj Max. Operating Junction Temperature 175 ℃

Tstg Storage Temperature -55~175 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Channel-to-case thermal resistance


Rth(j-c) 0.5 ℃/W

Channel-to-ambient thermal resistance


Rth(j-a) 40 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IRFP260N，IIRFP260N

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 200 V

VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2.0 4.0 V

RDS(on) Drain-Source On-Resistance VGS=10V; ID=28A 40 mΩ

IGSS Gate-Source Leakage Current VGS= ±20V ±0.1 μA

IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V 25 μA

VSD Diode forward voltage IS=28A, VGS = 0V 1.3 V

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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