TIP131, TIP132 (NPN),

TIP137 (PNP)

Darlington Complementary
Silicon Power Transistors
Designed for general−purpose amplifier and low−speed switching
applications. http://onsemi.com

Features
DARLINGTON 8 AMPERE
• High DC Current Gain −
hFE = 2500 (Typ) @ IC COMPLEMENTARY SILICON
= 4.0 Adc POWER TRANSISTORS
• Collector−Emitter Sustaining Voltage − @ 30 mAdc 80−100 VOLTS, 70 WATTS
VCEO(sus) = 80 Vdc (Min) − TIP131
= 100 Vdc (Min) − TIP132, TIP137
MARKING
• Low Collector−Emitter Saturation Voltage −
DIAGRAM
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc
= 3.0 Vdc (Max) @ IC = 6.0 Adc 4
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
TO−220AB
• Pb−Free Packages are Available* CASE 221A TIP13xG
STYLE 1 AYWW
MAXIMUM RATINGS STYLE 1:
TIP132 1 PIN 1. BASE
2 2. COLLECTOR
Rating Symbol TIP131 TIP137 Unit 3 3. EMITTER
4. COLLECTOR
Collector−Emitter Voltage VCEO 80 100 Vdc
Collector−Base Voltage VCB 80 100 Vdc TIP13x = Device Code
Emitter−Base Voltage VEB 5.0 Vdc x = 1, 2, or 7
A = Assembly Location
Collector Current − Continuous IC 8.0 Adc
Y = Year
Peak 12
WW = Work Week
Base Current IB 300 mAdc G = Pb−Free Package
Total Power Dissipation @ TC = 25°C PD 70 W
Total Power Dissipation @ TA = 25°C PD 2.0 W
ORDERING INFORMATION
Operating and Storage Junction, TJ, Tstg –65 to +150 °C
Temperature Range Device Package Shipping
THERMAL CHARACTERISTICS
TIP131 TO−220 50 Units/Rail
Characteristic Symbol Max Unit
TIP131G TO−220 50 Units/Rail
Thermal Resistance, RqJC 1.78 °C/W (Pb−Free)
Junction−to−Case
Thermal Resistance, RqJA 63.5 °C/W TIP132 TO−220 50 Units/Rail
Junction−to−Ambient TIP132G TO−220 50 Units/Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum (Pb−Free)
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the TIP137 TO−220 50 Units/Rail
Recommended Operating Conditions may affect device reliability. TIP137G TO−220 50 Units/Rail
(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

September, 2011 − Rev. 3 TIP131/D
 TIP131, TIP132 (NPN), TIP137 (PNP)

PNP COLLECTOR NPN COLLECTOR

TIP137 TIP131
TIP132

BASE BASE

≈ 8.0 k ≈ 120 ≈ 8.0 k ≈ 120

EMITTER EMITTER

Figure 1. Darlington Circuit Schematic

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc
(IC = 30 mAdc, IB = 0) TIP131 80 −
TIP132, TIP137 100 −
Collector Cutoff Current ICEO mAdc
(VCE = 40 Vdc, IB = 0) TIP131 − 0.5
(VCE = 50 Vdc, IB = 0) TIP132, TIP137 − 0.5
Collector Cutoff Current ICBO mAdc
(VCB = 80 Vdc, IE = 0) TIP131 − 0.2
(VCB = 100 Vdc, IE = 0) TIP132, TIP137 − 0.2
Emitter Cutoff Current IEBO − 5.0 mAdc
(VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)
DC Current Gain hFE −
(IC = 1.0 Adc, VCE = 4.0 Vdc) 500 −
(IC = 4.0 Adc, VCE = 4.0 Vdc) 1000 15000
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 4.0 Adc, IB = 16 mAdc) − 2.0
(IC = 6.0 Adc, IB = 30 mAdc) − 3.0
Base−Emitter On Voltage VBE(on) − 2.5 Vdc
(IC = 4.0 Adc, VCE = 4.0 Vdc)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

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 TIP131, TIP132 (NPN), TIP137 (PNP)

TA TC
4.0 80

PD, POWER DISSIPATION (WATTS)

3.0 60

TC
2.0 40

TA
1.0 20

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)

Figure 2. Power Derating

1.0
0.7
r(t), TRANSIENT THERMAL RESISTANCE

D = 0.5
0.5

0.3
0.2
0.2
(NORMALIZED)

0.1 ZqJC(t) = r(t) RqJC P(pk)

0.1
RqJC = 1.78°C/W MAX
0.07 0.05 D CURVES APPLY FOR POWER
0.05 PULSE TRAIN SHOWN
0.02 t1
0.03 READ TIME AT t1 t2
TJ(pk) - TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2
0.02
0.01
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 3. Thermal Response

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 TIP131, TIP132 (NPN), TIP137 (PNP)

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T S
ALLOWED.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.036 0.64 0.91
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.025 0.36 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V
Z
0.045
---
---
0.080
1.15
---
---
2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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