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2 SD 2025

This document provides information about the isc Silicon NPN Darlington Power Transistor 2SD2025. It includes specifications for the device's electrical characteristics such as a collector-emitter breakdown voltage of 100V minimum and DC current gain of 1000 minimum at 3V and 2A. It also lists the device's maximum ratings for parameters like collector-base voltage, collector-emitter voltage, and collector current. The transistor is designed for power amplifier applications and provides minimum lot-to-lot variations for robust performance.

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135 views2 pages

2 SD 2025

This document provides information about the isc Silicon NPN Darlington Power Transistor 2SD2025. It includes specifications for the device's electrical characteristics such as a collector-emitter breakdown voltage of 100V minimum and DC current gain of 1000 minimum at 3V and 2A. It also lists the device's maximum ratings for parameters like collector-base voltage, collector-emitter voltage, and collector current. The transistor is designed for power amplifier applications and provides minimum lot-to-lot variations for robust performance.

Uploaded by

victor zapata
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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isc Silicon NPN Darlington Power Transistor 2SD2025

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High DC Current Gain-
: hFE= 1000(Min)@ (VCE= 3V, IC= 2A)
·Complement to Type 2SB1344
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 120 V

VCEO Collector-Emitter Voltage 120 V

VEBO Emitter-Base Voltage 7 V

IC Collector Current-Continuous 8 A

ICM Collector Current-Peak 10 A

Collector Power Dissipation


2
@Ta=25℃
PC W
Collector Power Dissipation
30
@TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Darlington Power Transistor 2SD2025

ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 120 V

V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA; IE= 0 120 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V

ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3 mA

hFE DC Current Gain IC= 2A; VCE= 3V 1000 20000

COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 50 pF

fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= 5V; ftest= 10MHz 40 MHz

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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