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2N5294 2N5296 2N5298 NPN Silicon Transistor Description

The document provides specifications for three NPN silicon transistor types (2N5294, 2N5296, 2N5298) manufactured by Central Semiconductor. The transistors are designed for power amplifier and medium speed switching applications. Maximum ratings, electrical characteristics, and packaging details are given for each transistor type. Contact information is also provided for product support, custom options, and distribution.

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Venu Gopal Rao Aggress
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78 views4 pages

2N5294 2N5296 2N5298 NPN Silicon Transistor Description

The document provides specifications for three NPN silicon transistor types (2N5294, 2N5296, 2N5298) manufactured by Central Semiconductor. The transistors are designed for power amplifier and medium speed switching applications. Maximum ratings, electrical characteristics, and packaging details are given for each transistor type. Contact information is also provided for product support, custom options, and distribution.

Uploaded by

Venu Gopal Rao Aggress
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2N5294

2N5296
w w w. c e n t r a l s e m i . c o m
2N5298
DESCRIPTION:
NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N5294, 2N5296,
and 2N5298 types are NPN silicon transistors
manufactured by the epitaxial base process, and
designed for applications that require power amplifier
and medium speed switching capabilities.

MARKING: FULL PART NUMBER

TO-220 CASE

MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N5294 2N5296 2N5298 UNITS


Collector-Base Voltage VCBO 80 60 80 V
Collector-Emitter Voltage VCEV 80 60 80 V
Collector-Emitter Voltage (RBE=100Ω) VCER 75 50 70 V
Collector-Emitter Voltage VCEO 70 40 60 V
Continuous Collector Current IC 4.0 A
Continuous Base Current IB 2.0 A
Power Dissipation PD 36 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 70 °C/W
Thermal Resistance ΘJC 3.47 °C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)


2N5294 2N5296 2N5298
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
ICEV VCE=35V, VEB=1.5V - - - 2.0 - - mA
ICEV VCE=35V, VEB=1.5V, TC=150°C - - - 5.0 - - mA
ICEV VCE=65V, VEB=1.5V - 0.5 - - - 0.5 mA
ICEV VCE=65V, VEB=1.5V, TC=150°C - 3.0 - - - 3.0 mA
ICER VCE=50V, RBE=100Ω - 0.5 - - - 0.5 mA
ICER VCE=50V, RBE=100Ω, TC=150°C - 2.0 - - - 2.0 mA
IEBO VEB=7.0V - 1.0 - - - - mA
IEBO VEB=5.0V - - - 1.0 - 1.0 mA
BVCEV VBE=1.5V, IC=100mA 80 - 60 - 80 - V
BVCER IC=100mA, RBE=100Ω 75 - 50 - 70 - V
BVCEO IC=100mA 70 - 40 - 60 - V
VCE(SAT) IC=500mA, IB=50mA - 1.0 - - - - V
VCE(SAT) IC=1.0A, IB=100mA - - - 1.0 - - V
VCE(SAT) IC=1.5A, IB=150mA - - - - - 1.0 V
VBE(ON) VCE=4.0V, IC=500mA - 1.1 - - - - V
VBE(ON) VCE=4.0V, IC=1.0A - - - 1.3 - - V
VBE(ON) VCE=4.0V, IC=1.5A - - - - - 1.5 V

R1 (26-September 2012)
2N5294
2N5296
2N5298

NPN SILICON TRANSISTOR

ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)


2N5294 2N5296 2N5298
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
hFE VCE=4.0V, IC=500mA 30 120 - - - -
hFE VCE=4.0V, IC=1.0A - - 30 120 - -
hFE VCE=4.0V, IC=1.5A - - - - 20 80
fT VCE=4.0V, IC=200mA 0.8 - 0.8 - 0.8 - MHz
ton VCC=30V, IC=500mA, IB=50mA - 5.0 - - - - μs
ton VCC=30V, IC=1.0A, IB=100mA - - - 5.0 - - μs
ton VCC=30V, IC=1.5A, IB=150mA - - - - - 5.0 μs
toff VCC=30V, IC=500mA, IB=50mA - 15 - - - - μs
toff VCC=30V, IC=1.0A, IB=100mA - - - 15 - - μs
toff VCC=30V, IC=1.5A, IB=150mA - - - - - 15 μs

TO-220 CASE - MECHANICAL OUTLINE

LEAD CODE:
R2 1) Base
2) Collector
3) Emitter
Tab) Collector

MARKING: FULL PART NUMBER

R1 (26-September 2012)
w w w. c e n t r a l s e m i . c o m
OUTSTANDING SUPPORT AND SUPERIOR SERVICES

PRODUCT SUPPORT
Central’s operations team provides the highest level of support to insure product is delivered on-time.
• Supply management (Customer portals) • Custom bar coding for shipments
• Inventory bonding • Custom product packing
• Consolidated shipping options

DESIGNER SUPPORT/SERVICES
Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2nd day air) • Special wafer diffusions
• Online technical data and parametric search • PbSn plating options
• SPICE models • Package details
• Custom electrical curves • Application notes
• Environmental regulation compliance • Application and design sample kits
• Customer specific screening • Custom product and package development
• Up-screening capabilities

REQUESTING PRODUCT PLATING


1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).

CONTACT US

Corporate Headquarters & Customer Support Team

Central Semiconductor Corp.


145 Adams Avenue Worldwide Field Representatives:
Hauppauge, NY 11788 USA www.centralsemi.com/wwreps
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824 Worldwide Distributors:
Support Team Fax: (631) 435-3388 www.centralsemi.com/wwdistributors
www.centralsemi.com

For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms

w w w. c e n t r a l s e m i . c o m (001)
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Central Semiconductor:
2N5296 2N5296 TIN/LEAD

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