Scribd
Upload
98 views2 pages

2SC2921 Inchange PDF

This document provides information about the 2SC2921 silicon NPN power transistor from ISC. It has a collector-emitter breakdown voltage of 160V minimum and is intended for audio and general purpose applications. The transistor has a continuous collector current of 15A, collector power dissipation of 150W at 25°C junction temperature, and DC current gain ranges from 50 to 180.

Uploaded by

Venu Gopal Rao Aggress
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
98 views2 pages

2SC2921 Inchange PDF

This document provides information about the 2SC2921 silicon NPN power transistor from ISC. It has a collector-emitter breakdown voltage of 160V minimum and is intended for audio and general purpose applications. The transistor has a continuous collector current of 15A, collector power dissipation of 150W at 25°C junction temperature, and DC current gain ranges from 50 to 180.

Uploaded by

Venu Gopal Rao Aggress
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

isc Silicon NPN Power Transistor 2SC2921

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)
·High Power Dissipation
·Complement to Type 2SA1215
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·For audio and general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 160 V

VCEO Collector-Emitter Voltage 160 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 15 A

IB Base Current-Continuous 4 A

Collector Power Dissipation


PC 150 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor 2SC2921

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 160 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V

ICBO Collector Cutoff Current VCB= 160V; IE= 0 100 μA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA

hFE DC Current Gain IC= 5A; VCE= 4V 50 180

COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 200 pF

fT Current-Gain—Bandwidth Product IE= -2A; VCE= 12V 10 MHz

Switching times

ton Turn-on Time 0.2 μs

IC= 5A; RL= 12Ω,


tstg Storage Time 1.5 μs
IB1= -IB2= 0.5A, VCC= 60V

tf Fall Time 0.35 μs

 hFE Classifications
O P Y

50-100 70-140 90-180

Notice：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

You might also like