MKF 585 DDR3 3L Us
MKF 585 DDR3 3L Us
COM
Kingston on-board DRAM is designed to meet the needs of embedded applications and offers a
low-voltage option for lower power consumption.
Key Features
• Double-data-rate architecture: two data transfers per clock cycle
• The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture
• Bi-directional differential data strobe (DOS and /DQS) is transmitted/received with data for
capturing data at the receiver
• DOS is edge-aligned with data for READS; center-aligned with data for WRITES
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DOS transitions with CK transitions
• Commands entered on each positive CK edge; data and data mask referenced to both
edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for better command and data bus efficiency
• On-Die Termination (ODD for better signal quality
— Synchronous ODT
— Dynamic CDT
— Asynchronous ODT
• Multi Purpose Register (MPR) for pre-defined pattern read out
• ZQ calibration for DO drive and ODT
• Programmable Partial Array Self-Refresh (PASR)
• RESET pin for Power-up sequence and reset function
• SRT range: Normal/extended
• Programmable Output driver impedance control