WEITRON 2N7002

Small Signal MOSFET

N-Channel 3 DRAIN

1
Features: 1 2
*Low On-Resistance : 3 Ω GATE
*Low Input Capacitance: 25PF
*Low Out put Capacitance : 6PF 2 SOT-23
*Low Threshole :1 .5V(TYE) SOURCE
*Fast Switching Speed : 7.5ns

Maximum Ratings (TA=25 C Unless Otherwise Specified)

Rating Symbol Value Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current (TA=25 C) ID 250 mA
Pulsed Drain Current(1) IDM 1300 mA
Power Dissipation (TA=25 C) PD 350 mW
Maximax Junction-to-Ambient R JA 357 C/W

Operating Junction and Storage

TJ, Tstg -55 to 150 C
Temperature Range

Device Marking
2N7002=7002

Note 1:
Pulse Width Limited by Maximum Junction Temperature

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 2N7002
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS V
VGS=0V, ID=10 uA 60 70
Gate-Threshold Voltage VGS (th)
VDS=VGS , ID=250 uA 1 1.5 2.5 V
Gate-body Leakage IGSS
- - 100 nA
VDS=0V, VGS=15V
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V IDSS - - 1 uA
VDS=60V, VGS=0V, Tj=125 C 500
On-State Drain Current (2)
VGS=10V, VDS=7.5V ID (on) 800 1300 - mA
VGS=4.5V, VDS=10V 500 700 -
Drain-Source On-Resistance (2)
VGS=10V, ID=250mA rDS (on) - 1.5 3 Ω
VGS=4.5V, ID=200mA - 2.0 4
Forward Transconductance (2) gfs - 300 - mS
VDS=15V, ID=200mA
Diode Forward Voltage VSD
IS=200mA, VGS=0V - 0.85 1.2 V

Dynamic(1)
Total Gate Charge Qg -
VDS=30V, VGS=10V, ID=250mA 0.6 1.0
Gate-Source Charge Q gs - 0.06 - nC
VDS=30V, VGS=10V, ID=250mA
Gate-Drain Charge Qgd - -
0.06
VDS=30V, VGS=10V, ID=250mA
Input Capacitance Ciss 25
VDS=25V, VGS=0V, f=1MHZ - -
Output Capacitance - -
Coss 6 PF
VDS=25V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
Crss - 1.2 -
VDS=25V, VGS=0V, f=1MHZ

Switching (1) (3)

Turn-On Time td(on) - 7.5
VDD=30V, RL=200 Ω ,ID=100mA 20
nS
VGEN=10V, RG=10 Ω tr - 6.0 -
Turn-Off Time td(off ) -
VDD=30V, RL=200 Ω, ID=100mA 7.5 20 nS
VGEN=10V, RG=10 Ω tf - 3.0 -

Note: 1. For Design Aid Only not Subject to Production Testing.

2. Pulse Test : PW<_ 300µs, Duty Cycle <_ 2%
3. Switching Time is Essentially Independent of Operating Temperature .

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 2N7002

2.0 1.0
1.8 TA=25 C VDS=10V
-55 C 25 C
1.6 VGS=10V 0.8
ID , DRAIN CURRENT (AMPS)

ID , DRAIN CURRENT (AMPS)

1.4 125 C
9V
1.2 0.6
8V
1.0
7V
0.8 0.4
0.6 6V
5V
0.4 0.2
0.2 4V

0 3V
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

VDS, DRAIN SOURSE VOLTAGE (VOLTS) VGS, GATE SOURCE VOLTAGE (VOLTS)
FIG.1 Ohmic Region FIG.2 Transfer Characteristics

2.4 1.2
rDS(ON), STATIC DRAIN-SOURSE ON -RESISTANCE

VGS (th), THRESHOLD VOLTAGE (NORMALIZED)

2.2 1.05
VGS = 10V 1.1
2.0 VDS = VGS
ID=200mA
1.10 ID = 1.0mA
1.8
(NORMALIZED)

1.0
1.6
0.95
1.4
0.9
1.2
0.85
1.0
0.8
0.8 0.8
0.6 0.75
0.4 0.7
-60 -20 +20 +80 +100 +140 -60 -20 +20 +80 +100 +140
T,TEMPERATURE ( C) T,TEMPERATURE ( C)
FIG.3 Temperature Versus Static FIG.4 Temperature Versus Gate
Drain-Sourse On-Resistance Threshold Voltage

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 2N7002

SOT-23 Outline Dimension

SOT-23
A Dim Min Max
A 0.35 0.51
B 1.19 1.40
TOP VIEW B C C 2.10 3.00
D 0.85 1.05
D E 0.46 1.00
E
G G 1.70 2.10
H H 2.70 3.10
J 0.01 0.13
K K 0.89 1.10
L 0.30 0.61
L
J M M 0.076 0.25

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