Lab experiments set 1 : MEL ZG631_PMMD

Use Matlab for the experiments:

Lab1: Given that at T = 300oK, the electron concentration in silicon is 1.52 x 1010 electrons
/cm3 and Eg = 1.1 eV at 300o K.
(a) Find the constant A of Equation
(b) Use MATLAB to plot the electron concentration versus temperature.
From Equation

we have

We use MATLAB to solve for A.

The width of energy gap with temperature is given as

% Calculation of the constant A

% Given that at T = 300K, the electron concentration in silicon is 1.52 x 1010
% electrons /cm3 and Eg = 1.1 eV at 300K. Use MATLAB to plot the electron
concentration versus temperature
%diary lab1.dat
k = 8.62e-5;
na = 1.52e10; ta = 300;
ega = 1.1;
ka = -ega/(k*ta);
t32a = ta.^1.5;
A = na/(t32a*exp(ka));
fprintf('constant A is %10.5e \n', A)
% Electron Concentration vs. temperature
for i = 1:10
t(i) = 273 + 10*(i-1);
eg(i) = 1.17 - 4.37e-4*(t(i)*t(i))/(t(i) + 636);
t32(i) = t(i).^1.5;
ni(i) = A*t32(i)*exp(-eg(i)/(k*t(i)));
end
semilogy(t,ni)
 Lab experiments set 1 : MEL ZG631_PMMD

title('Electron Concentration vs. Temperature')

xlabel('Temperature, K')
ylabel('Electron Concentration, cm-3')

Lab2.Assuming the semiconductor to be nondegenerate and employing the equation

expression for ni , confirm that the electron distribution in the conductance band
normalized to the total electron concentration is given by

Where
 Lab experiments set 1 : MEL ZG631_PMMD

Compute and plot the normalized electron distribution in the conduction band versus E — Ec
for temperature T = 300 K, 600 K. and 1200 K. Plot the distribution values along the x-axis(0
≤ gc(E)f(E)/n≤ 20 eV-1) and E — Ec(O≤ E — Ec ≤0.4eV) aloeg the y-axis on a single set of
coordinates. Discuss your results.

close
clear
k=8.617e-5;
T=[300 600 1200];
KT= k.*T;
E_Ec= linspace(0, 0.4);
for i = 1:3
dist= 2*sqrt(E_Ec)/(sqrt(pi)*KT(i)^(3/2)).*exp(-E_Ec/KT(i));
y(i,:)= dist;
end
plot(E_Ec,y); grid
axis([0,0.4,0,20]);
xlabel('E-Ec (ev)');
ylabel('normalized distribution (1/ev)');
text(.005,12,'300k','color','yellow');
text(.01,7,'600k','color','magenta');
text(.015,3,'1200k','color','cyan');
 Lab experiments set 1 : MEL ZG631_PMMD

Lab3 : Plot the Fermi probability function versus energy for different temperatures .
k=8.617e-5;
for ii=1:4
T=100*ii;
KT= k*T;
dE(ii,1)= -5*KT;
for jj= 1:101
f(ii,jj)= 1/(1+exp(dE(ii,jj)/KT));
dE(ii,jj+1)= dE(ii,jj)+0.1*KT;
end
end
dE= dE(:,1:jj);
close
plot (dE',f'); grid;
xlabel('E-Ef(ev)');ylabel('f(E)');
text(.05,.2, 'T=400K');text(-.03,.1, 'T=100K')
 Lab experiments set 1 : MEL ZG631_PMMD

Lab4 For an n-type semiconductor at 300o K, if the doping concentration is varied from 1012
to 1020 atoms/cm3 , determine the minority carriers in the doped semiconductors.

% hole concentration in a n-type semiconductor

nd = logspace(12,20);
n = nd;
ni = 1.52e10;
ni_sq = ni*ni;
p = ni_sq./nd;
semilogx(nd,p,'b')
grid
title('Hole concentration')
xlabel('Doping concentration, cm-3')
ylabel('Hole concentration, cm-3')
 Lab experiments set 1 : MEL ZG631_PMMD

Lab5: (a) Assume that the electron mobility in an n-type semiconductor is given by

where Nd is the donor concentration in cm-3 . Assuming complete ionization, plot the
conductivity as a function of Nd over the range 1015 ≤ Nd ≤ 1018 cm-3 .
(b) Compare the results of part (a) to that if the mobility were assumed to be a constant
equal to 1350 cm2 /V-s.
(c) If an electric fi eld of E =10 V/cm is applied to the semiconductor, plot the electron drift
current density of parts (a) and (b).
% conductivity variation in an n-type semiconductor
nd = logspace(12,20);
n=nd; e= 1.6e-19;
mun = 1350./sqrt(1+nd/5e16);
sigma= n*e.*mun;
semilogx(nd,sigma,'b')
 Lab experiments set 1 : MEL ZG631_PMMD

grid
title('conductivity Vs doping')
xlabel('Doping concentration, cm-3')
ylabel('conductivity, s')
f1= figure;
sigma2= 1350*1.6e-19.*nd;
semilogx(nd,sigma2,'b')
grid
title('conductivity Vs doping')
xlabel('Doping concentration, cm-3')
ylabel('conductivity sigma2, s')
E = 10;
J1= 10* sigma;
f2= figure;
semilogx(nd,J1,'b')
grid
title('current density Vs doping')
xlabel('Doping concentration, cm-3')
ylabel('current density J1, Acm-2')
J2= 10* sigma2;
f3= figure;
semilogx(nd,J2,'b')
grid
title('current density Vs doping')
xlabel('Doping concentration, cm-3')
ylabel('current density J2, Acm-2')
 Lab experiments set 1 : MEL ZG631_PMMD

Fig b
 Lab experiments set 1 : MEL ZG631_PMMD

Fig c
Lab experiments set 1 : MEL ZG631_PMMD
 Lab experiments set 1 : MEL ZG631_PMMD

Lab6: Consider silicon doped at impurity concentrations of Nd =2 X 1016 cm-3 and

Na =0. An empirical expression relating electron drift velocity to electric field is given by

where µn0 =1350 cm2 /V-s, vsat = 1.8 = 107 cm/s, and E is given in V/cm. Plot electron drift
current density (magnitude) versus electric field (log–log scale) over the range 0 ≤ E ≤ 106
V/cm.
E = logspace(0,6);
Nd= 2e16; e= 1.6e-19;muno= 1350; vsat= 1.8e7;
vdrift= muno*E./sqrt(1+(muno*E/vsat).^2);
Jdrift= Nd*e*muno.*vdrift;
 Lab experiments set 1 : MEL ZG631_PMMD

semilogx(E,Jdrift,'b')
grid
title('Drift current Vs electric field')
xlabel('Electric field E, V/cm')
ylabel('Drift current Jdrift, A')

Lab7: The effective density of states functions in silicon can be written in the form

mobilities are given by

Bandgap energy is Eg =1.12 eV and independent of temperature. . Plot the intrinsic conductivity as a
function of T over the range 200 ≤ T ≤ 600 K
 Lab experiments set 1 : MEL ZG631_PMMD

T = linspace(200,600);
Nc= 2.8e19*(T/300).^1.5;
Nv= 1.04e19*(T/300).^1.5;
mun= 1350*(T/300).^-1.5;
mup= 480*(T/300).^-1.5;
KT= 0.026*(T/300);
e= 1.6e-19;
Ni= Nc.*Nv.*exp(-1.12./KT);
ni= sqrt(Ni);
sigma = e*ni.*(mun + mup);
plot(T,sigma,'r')
grid
title('intrinsic conductivity Vs Temperature')
xlabel('Tempearture T, K')
ylabel('Conductivity, S')

Lab8: With increasing temperaturc an expansion of the crystal lattice usually leads to a weakening
of the interatomic bonds and an associated decrease in the band gap energy. For many
semiconductors the cited variation of the band gap energy with temperature can be modeled by the
empirical relationship
 Lab experiments set 1 : MEL ZG631_PMMD

witere α and β are constants chosen to obtain the best fit to experimental data and EG(0) is the
limiting value of the band gap at 0K. For Si a a fit is

(a) Make a plot of EG verses T for Si spanning the temperature range from T = 0 K to T 600 K.
Specifically note the valve of EG at 300 K.
(b) Far T> 300 K, the temperature variation is nearly linear

-4
EG(T) = 1.205 — 2.8 X 10 for T> 300k

How does this simplified relationship compare with the more precise relationship over the
temperature region of mutual validity?

% parabolic Fit parameters

EGO= 1.17; a= 4.73e-4; b=636;

% parabolic computaion and plot
T=[0:5:600];
EG= EGO-a.*(T.^2)./(T+b);
EG300=EGO-a.*(300.^2)./(300+b);
plot(T,EG); axis([0 600 1.0 1.2]);grid;
xlabel('T(K)'); ylabel('EG(ev)');
hold on
%Linear computaion and plot
EGO= 1.205; a= 2.8e-4;
EG= EGO-a.*T;
plot(T,EG,'b--');
hold off
%T= 300k result
EG300
Lab experiments set 1 : MEL ZG631_PMMD