GFD30N03

New Product Vishay Semiconductor

N-Channel Enhancement-Mode MOSFET VDS 30V

RDS(ON) 15mΩ

NCH D
ID 43A

TREENFET
®

G TO-252 (DPAK)
0.265 (6.73) 0.094 (2.39)
G

0.255 (6.48) 0.087 (2.21)

S
0.214 (5.44) 0.023 (0.58)
0.206 (5.23) 0.018 (0.46) 0.190
www.DataSheet4U.com D (4.826)
0.050 (1.27)
0.035 (0.89)

0.165
(4.191)
0.170 (4.32) min.
0.245 (6.22)
0.235 (5.97) 0.410 (10.41)
0.060 (1.52) 0.380 (9.65)
0.045 (1.14) 0.197 (5.00) 0.100
G S (2.54)
0.177 (4.49)

0.118
(3.0)
0.035 (0.89) 0.040 (1.02)
0.028 (0.71) 0.025 (0.64)
0.020 (0.51)
0.023 (0.58) min. 0.063
0.204 (5.18) 0.018 (0.46)
0.009 (0.23) (1.6)
0.156 (3.96) 0.243
0.001 (0.03) Dimensions in inches (6.172)
0.045 (1.14)
0.035 (0.89) and (millimeters)
Mounting Pad Layout

Mechanical Data Features

Case: JEDEC TO-252 molded plastic body • Advanced Trench Process Technology
Terminals: Solder plated, solderable per MIL-STD-750, • High Density Cell Design for Ultra Low On-Resistance
Method 2026 • Specially Designed for Low Voltage DC/DC Converters
High temperature soldering guaranteed: • Fast Switching for High Efficiency
250°C/10 seconds at terminals
Weight: 0.011oz., 0.4g

Maximum Ratings and Thermal Characteristics (T C = 25°C unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 20

Continuous Drain Current ID 43

(1)
A
Pulsed Drain Current IDM 120
TC = 25°C 44.5
Maximum Power Dissipation PD W
TC = 100°C 17.8
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 °C
Junction-to-Case Thermal Resistance RθJC 2.8
(2)
°C/W
Junction-to-Ambient Thermal Resistance RθJA 50

Note: (1) Pulse width limited by maximum junction temperature

(2) 1-in2 2oz. Cu PCB mounted

Document Number 74557 www.vishay.com

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 GFD30N03
Vishay Semiconductor

Electrical Characteristics (T J = 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 – – V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 – 3.0 V
Gate-Body Leakage IGSS VGS = ±20V, VDS = 0V – – ±100 nA
Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V – – 1 µA
On-State Drain Current (1)
ID(on) VDS ≥ 5V, VGS = 10V 40 – – A
VGS = 10V, ID = 20A – 12.5 15
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Drain-Source On-State Resistance(2) RDS(on) mΩ
VGS = 4.5V, ID = 17A – 17.5 21
Forward Transconductance(1) gfs VDS = 15V, ID = 20A – 35 – S
Dynamic
VDS=15V, VGS=5.0V, ID =20A – 16 22
Total Gate Charge Qg
– 34 48
VDS = 15V, VGS = 10V nC
Gate-Source Charge Qgs ID = 20A – 5.7 –
Gate-Drain Charge Qgd – 4.7 –
Turn-On Delay Time td(on) – 10 20
VDD = 15V, RL = 15Ω
Rise Time tr – 9 18
ID ≅ 1A, VGEN = 10V ns
Turn-Off Delay Time td(off) – 47 75
RG = 6Ω
Fall Time tf – 13 26
Input Capacitance Ciss VGS = 0V – 1850 –
Output Capacitance Coss VDS = 15V – 315 – pF
Reverse Transfer Capacitance Crss f = 1.0MHZ – 150 –
Source-Drain Diode
Max Diode Forward Current IS – – – 20 A
(1)
Diode Forward Voltage VSD IS = 20A, VGS = 0V – 0.91 1.3 V
Note: (1) Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%

VDD
ton toff

Switching RD Switching
VIN td(on) tr td(off) tf
Test Circuit Waveforms 90% 90 %
D VOUT

VGEN Output, VOUT 10% 10%

INVERTED
RG DUT
G 90%

50% 50%

S Input, VIN 10%

PULSE WIDTH

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 GFD30N03
Vishay Semiconductor

Ratings and
Characteristic Curves (T A = 25°C unless otherwise noted)

Fig. 1 – Output Characteristics Fig. 2 – Transfer Characteristics

80 60
VGS = 10V 5.0V VDS = 10V
70
50
ID -- Drain Source Current (A)

6.0V 4.5V
60

ID -- Drain Current (A)

4.0V 40
50

40 30
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30 3.5V
20
TJ = 125°C --55°C
20
VGS = 3.0V 10
10 25°C

0 0
0 1 2 3 4 5 1 2 3 4 5
VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V)

Fig. 3 – Threshold Voltage vs. Fig. 4 – On-Resistance vs.

Temperature Drain Current
2.0 0.035
ID = 250µA
1.8 0.03
VGS(th) -- Threshold Voltage (V)

RDS(ON) -- On-Resistance (Ω)

1.6 0.025

VGS = 4.5V
1.4 0.02

1.2 0.015
VGS = 10V
1 0.01

0.8 0.005

0.6 0
--50 --25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80
TJ -- Junction Temperature (°C) ID -- Drain Current (A)

Fig. 5 – On-Resistance vs.

Junction Temperature
1.6
VGS = 10V
ID = 20A
1.4
RDS(ON) -- On-Resistance
(Normalized)

1.2

0.8

0.6
--50 --25 0 25 50 75 100 125 150
TJ -- Junction Temperature (°C)

Document Number 74557 www.vishay.com

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 GFD30N03
Vishay Semiconductor

Ratings and
Characteristic Curves (T A = 25°C unless otherwise noted)

Fig. 6 – On-Resistance vs.

Gate-to-Source Voltage Fig. 7 – Gate Charge
0.05 10
ID = 20A VDS = 15V
ID = 20A

VGS -- Gate-to-Source Voltage (V)

RDS(ON) -- On-Resistance (Ω)

0.04 8

0.03 6
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TJ = 125°C
0.02 4

0.01 25°C
2

0 0
2 4 6 8 10 0 5 10 15 20 25 30 35
VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC)

Fig. 9 – Source-Drain Diode

Fig. 8 – Capacitance Forward Voltage
2500 100
f = 1MHZ VGS = 0V
VGS = 0V
2000
Ciss 10
IS -- Source Current (A)
C -- Capacitance (pF)

1500
TJ = 125°C
1

1000

25°C --55°C
0.1
500
Coss
Crss

0 0.01
0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VDS -- Drain-to-Source Voltage (V) VSD -- Source-to-Drain Voltage (V)

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Vishay Semiconductor

Ratings and
Characteristic Curves (T A = 25°C unless otherwise noted)

Fig. 10 – Transient Thermal

Impedance Fig. 11 – Power vs. Pulse Duration
1 1000

Single Pulse
800 RθJC = 2.8°C/W
TC = 25°C

www.DataSheet4U.com 600
0.1

400

200

0.01 0
0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10

Fig. 12 – Maximum Safe Operating Area

1000
ID -- Drain Current (A)

10
100 0µ
s
RDS(ON)
Limit 1m
s
10
m
s
DC
10
VGS = 10V 100ms
Single Pulse
RθJC = 2.8°C/W
TC = 25°C
1
0.1 1 10 100

VDS -- Drain-Source Voltage (V)

Document Number 74557 www.vishay.com

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