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Lecture 22

This document summarizes key aspects of microstrip patch antennas. It discusses their low profile, low cost advantages and disadvantages like narrow bandwidth. Rectangular and circular patch designs are covered. Feed configurations include microstrip line, coaxial probe, aperture coupling and proximity coupling. Methods for analyzing patch antennas include transmission line model, cavity model and full wave model. Formulas are provided for calculating resonant frequency and input impedance of rectangular patches. The effects of fringing and mutual coupling are also summarized.

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0% found this document useful (0 votes)
34 views23 pages

Lecture 22

This document summarizes key aspects of microstrip patch antennas. It discusses their low profile, low cost advantages and disadvantages like narrow bandwidth. Rectangular and circular patch designs are covered. Feed configurations include microstrip line, coaxial probe, aperture coupling and proximity coupling. Methods for analyzing patch antennas include transmission line model, cavity model and full wave model. Formulas are provided for calculating resonant frequency and input impedance of rectangular patches. The effects of fringing and mutual coupling are also summarized.

Uploaded by

mat
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We take content rights seriously. If you suspect this is your content, claim it here.
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Chapter 14

Asst Prof Dr. Zeeshan Zahid


Introduction
Rectangular Patch
Circular Patch
Quality Factor, Bandwidth, and Efficiency
Input Impedance
Coupling
Circular Polarization
Arrays and Feed Networks

1
Microstrip antennas are famous for their low profile,
low cost, low weight ease of installation
Easy to manufacture using PCB technology
Applications in aircrafts, satellites, missiles and
mobile communications
By adding PINs and varactors a variety of adaptive
operations can be achieved
Disadvantages: Narrow bandwidth, low efficiency, low
power handling & spurious feed radiations
Larger BW can be achieved by increasing the height
of substrate but it decreases efficiency

2
It consists of metallic patch, substrate & ground plane
Patch antenna is broadside radiator
Field configuration beneath patch is called mode of
excitation
0.003λo ≤ h ≤ 0.05λo
2.2 ≤ εr ≤ 12
λo/3 < L < λo/2
Thick substrates are with low
εr are desirable
Patch is available in various
shapes
Most common: square, rectangular, circular 3
Four types of feed configurations are
(1) micro-strip line (2) coaxial probe (3) aperture
coupling (4) proximity coupling

4
(Contacting) (Non Contacting)
Microstrip line is easy to fabricate & simple to match
With the increase in ‘h’ surface waves & spurious
radiation increases
Coaxial feed is also easy to fabricate with low
spurious radiations
Aperture coupling is most difficult of all to fabricate
It has moderate spurious radiations & narrow band
Matching is performed by controlling width of line and
length of slot

5
(1) Transmission line (2) cavity model (3) Full wave
Transmission line model is the easiest of all and
gives good physical insight
It is less accurate
Cavity model is more accurate but complex
Full wave model is most accurate & versatile
Can handle arbitrary shapes of patch

6
Most widely used configuration, easy to analyze
Can be analyzed by trans. line and cavity models
Rectangular patch:
The antenna can be modeled as array of two
radiating slots of width ‘W’ and height ‘h’, ‘L’ apart
Field form fringes at the edges of patch
Fringing depends on patch dimensions and ‘h’
Fringing affects resonant frequency

7
Fringing makes microstrip line look wider electrically
As parts of waves travel in space & dielectric, εeff
εeff is a function of frequency
εr >1, whereas 1 < εeff < εr
 r +1  r −1 1
 eff = +
2 2 1 + 12h / W

8
Due to fringing effect, patch looks electrically longer
The length of patch becomes L+2ΔL
ΔL can be calculated as
L ( eff + 0.3)(W / h + 0.264)
= 0.412
h ( eff − 0.258)(W / h + 0.8)

9
Resonance frequency of TM010 dominant mode is
1 Vc
fr = =
2L  r  o o 2L  r

For micro-strip patch fr is


1 Vc
fr = =
2(L + 2L)  r  o o 2L  r

Fringing increases with substrate height


Width of patch is
o Vc 2
W< W=
2 2fr  r + 1 10
For given fr, h and εr
Calculate width of patch using
Vc 2
W=
2fr r + 1
Calculate εeff

L ( eff + 0.3)(W / h + 0.264)


Find ΔL by = 0.412
h ( eff − 0.258)(W / h + 0.8)
g Vg
Actual length L = − fringingL = − 2L
2 2fr
1
L= − 2L L  0.47d − 0.49d
2fr  eff  o o
11
Design a rectangular microstrip antenna using a
substrate (RT/duroid 5880) with dielectric constant of
2.2, h = 0.1588 cm so as to resonate at 10 GHz.
Solution:
Vc 2
Width of the patch W =
2fr  r + 1
30 2
W= = 1.186cm
2(10) 2.2 + 1
Effective dielectric constant
2.2 + 1 2.2 − 1 1
 eff = + = 1.972
2 2 1 + 12(0.1558 /1.186)
12
Incremental length
(1.972 + 0.3)(1.186 / 0.158 + 0.264)
L = 0.1588(0.412)
(1.972 − 0.258)(1.186 / 0.158 + 0.8)
L = 0.081cm

30
Actual length L = − 2(0.081) = 0.906cm
2(10) 1.972

13
Patch antenna has two radiating slots
The admittance of both slots is Y1 = G1+jB1 = Y2

G1 can be calculate as G1 = 2Prad2


| Vo |
14
Asymptotic expressions of G1 are

15
Let’s find total input admittance at slot 1
Both slots are ideally separated by L = λ/2
Due to fringing effect L< λ/2
Transformed admittance of Ỹ2 = G2 + jB2 = G1 - jB1
Yin = Y1 + Ỹ2 = 2G1
Zin = 1/Yin = 1/(2G1) = Rin
With mutual coupling effects Rin = 1/{2(G1±G12)}

G12<<G1
r 2  L 
r − 1  W 
Rin = 90

h << λo
16
Resonant Rin can be changed by using inset feed

17
Characteristic impedance of microstrip line is

where Yc=1/Zc

Since G1/Yc<<1 and B1/Yc<<1

18
Mutual coupling can be calculated as

19
A microstrip antenna with overall dimensions of L =
0.906 cm (0.357 inches) and W = 1.186 cm (0.467
inches), substrate with height h = 0.1588 cm (0.0625
inches) and dielectric constant of ɛr = 2.2, is
operating at 10 GHz. Find
The input impedance.
The position of the inset feed point where the input
impedance is 50 Ω.
Solution: λo = 3 cm

G1 = 0.00328 Siemens
20
Using equation 14.18a, G12 = 6.1683x10-4
Rin(y=0)= 1/{2(G1+G12)} = 228.35 Ohms
+ sign is used in Rin because of odd field distribution
of TM010 mode
According to

Rin = 50 = 228.35 cos2(π/L yo)


yo = 0.3126 cm

21
The End

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