CHAPTER: 3 FABRICATION. oF Mosrer. y Explain Basic stepc tr Mos fabrication process 32. NMoe fobricabin process: 33 CMos febrication proeete flow. 34° Mos fabrication pro cece bg n-welt on p-subchale | BS eMos FabrteaLion precess by pwelt on n-cubchale 36 Explain Lageut alecign, ruler. | 37 Explata stick ae eee 38 Stick diagram ef emoe tnverter- 34 Explain visi decign mmetheclolog ees . 310 vist decign flow and yechat . FABRICATION Procéss’ Frow - Basic STEPS step. ~ Eoch cessing requires that certarw areas av a defined on-cbip “by apprepriate: matte” The 1¢ may be viewed as a sed ef pabtetried 7 tL é latin: i of dlop eal St, pyciiieny meted anol éncul 4 St 0,. . = Gn generals a layer must be palterned before the merct layer of material de applied on the chip. the process aused £0 fransfor a pattern bo @ layer, on the chip & catleot Lithography — Cinees, eae | hat ¢h own dictinet prtterning requirements, the Uthog raphic sequence mut be repeated for every le. t using a different: amabk-lwossadedy/svan Steps Thermat oxfeletin of the Silicon surface , which an oxide lage of damm. thickness te creafed on the eubsinlc- ® The entire surface €c covered with a layey of photovestct 5 whieh € ee a Light consitive, avid vesictant organic polymer, faltenkes Ensotubu tn the developing goluton © aA the photo reatt material << expoced? to uv light, the expocesl arent berome coluble . Te selectively expove thre photo restce , we have to cover come ef the axeas on the, Surfan witty a rmark coring expocure Thus, whe Hire structure. with the mat . ori top & ex pecedf +e uv leghtr areas whith are cove red He opaque feafares on the amath ote Shieloled . @) Photorectst Phoforesice & aw light cenctiive , aetd. reedihen’ organic polyenun , dart enteluble oy the develsping colton There ase two types | Photo recicy . by Poctti we, a. Negative, The type of photoresttl whal entee éncdluble and bewme coluble after e, ! fo uv Ugh & called pace gee Hye Photo reste.l = «= | ‘woo sodedyfnwem Hardened Photeretk+ Si -lubetralit "The type of photerectce wah ave nite Soluble and become eneolubte, Chardene ot) after expecure fo vv Ught, & called me 4 ative, Photorenic t Negative pretoresicte are WANE sé nists Ught but Het photots+trs Irphic ies fo 4c wot at butgh at that of : Pecttive eto reg*, Se, positive photoresicte au widely as oS4, (The tnexpored pertinc of @ Pphotoresécts can be removed aw sctvent - Now, the G0, regions which are mot covered “4 Photorerict can be efched uw) by using a chemical solvent CHE aud) oh dry ete (Plasma efeb) © We get aw oxide windew that earths He Si Surfer. D 6 (The remaining photoresit can he stripped frm | Hre Sig curfew vt using another solvent - J) FABRICATION OF ‘nMOS TRANSISTOR. Sheps - 1. Oxidation of 4 eubctrmbe te done, ca whith a relotiv thik silton dioxide, Layer, aleo calteol field oxide pic creaked on the surfew @ 2. Then. field oxide & selectively etched fettowing the etepe of patterning, mashing End etching. @Q « Whe surfew <& covered with a thin vhighv quality enide laser « which will act as a gate oxide of the Mot -Extor. @ nh 4. On the +op of the oxide aye, A petysilicon. ac deposited Pt ask as qate cleefrede Poker tel for rave tetor and alee at an tntersrnrect sede in GO e- ©5+ Thew the potyeiticory | « patterned and etched 40 form the ante reonnetls and nave tetor qale. @O 6+ The thin gate oxicle ee Se cubetrali ge ekcheot , hich expoces the bare Stlicow surface on whic the source and Arata funefiore are fo be formed - J) To The entire St curfare cc doped witty a high conuntrabin, Of dmpurities , ett. through diffusion or con implantatin - ~The fig @ showe, Hhocty the doping penetrolls the poly sf Uteon. on the surface reducing ete Nesletivite and ultimaf creating two m-type reqions wn the p-type subetrali - - Thee procecture allows very preetee posttioning of Hhe two regions relative 4o the gate, 4 ic alw called the ‘Celf- aligned’ process @® The entire surface és again covered with an énsutating layer of S102. © 4. The insulating oxide bayer & then, patterned in order 40 provicle contack windows for dint and souree. (J) 10> The surface % covered with, evaporaled| Al toon nium which will-forw the entecconnerts. © aed IR Perth sd lb acl 8Si-cubetrote 3) So, > Si- cubchrole ® Lge te $i0,> [ett / Si sulectrehe o Thin oxicte. SiO, >Blycitieon Thin oxicle sian St = Sube hale @ Metal Taculle | ert thin onlee ea Gio,CMos FABRICATION TRoctss | Flow . Create n-well regions d { channel -stop agi cia , (Grow fietd oxide, ‘anol | Sate oxiele (‘thin oxide) Depoctt at potter polystlione layer Fiplant cource and ebvain | reqions, substreli contacts ai ene “Creake conteck windows Aepocit and pattern metot oh ede ait it teh $ ,“LEMOS FABRICATION PROCESS. Ae Ne WELL PROCESS EOE 4. as w Slept s Take ow blank, Prsubstrote - Cover the blank wafer with a | by the Proeets of oxiclation ages of Cio, Cover the SiY, with a pattive photorerict 7 the procere f Peet Apply On Nowe miok and yy the photorcaict Maing organte Solwend.. Remove the Uncovered onthe with iy, thing + (HE cutel)- Remove tHe “rman of aw. nog photoresicy. to shipup ieee y % Mixture Newell ferment by the proms of aliffucdon or ton dm plantation - shnp-off remaindng exoe ¢ ee ALE act Nlow the p-substrale should be covered with Hy thin oxide | and above ep Polysit toon, layer te epoci+tecf. “4 Pottery the ley wih the previous sequene of pote tithe Pree. to form tHhe lis - Cover Hut willy ole tauet 0 le fine hci ak re gory > fatterw oxrele fo ole fi he mak strip eff the oxieles h- lf ety, ae13 Stailas. chepe smuct be followed 4 creak prclisfuciow rego 14. Now again cover the cubetrale with Hiicle oxide layes anol patterry ch where emtarte ano meecled to be made. we Cover the oxtele with amefal Chl) Lage anol shib-eff- the metal wherev he there c& me ated contecke. ae ene Photeresict UN 4to field. P-Sube bol Pleeiteons thin Onide1Oe fey tinonide 2 een P-Subcdrale” =| ely oxide [ sar of le Subetrat oxide