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Design Example Report: 45 W Isolated Flyback Power Supply Using Innoswitch 3-Ep Powigan Inn3678C-H606

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0% found this document useful (0 votes)
61 views

Design Example Report: 45 W Isolated Flyback Power Supply Using Innoswitch 3-Ep Powigan Inn3678C-H606

Uploaded by

jesus cautivo
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Design Example Report

45 W Isolated Flyback Power Supply Using


Title InnoSwitchTM3-EP PowiGaNTM INN3678C-
H606
Specification 90 VAC – 265 VAC Input; 20 V / 2.25 A Output
Application Adapter
Author Applications Engineering Department
Document
Number
DER-909

Date September 22, 2022


Revision 1.0
Summary and Features
 InnoSwitch3-EP is industry first AC/DC IC with isolated, safety rated integrated feedback
 All the benefits of secondary-side control with the simplicity of primary-side regulation
 Insensitive to transformer variation
 Built-in synchronous rectification for high efficiency
 Meets DOE6 and CoC Tier 2 V5 2016
 <30 mW no-load input power at 230 VAC input
 Primary sensed overvoltage protection
 Very low component count: 39 components
 >6db margin on conducted EMI
 Very high average efficiency
 >93% at 115 VAC and 230 VAC
 Very high full-load efficiency
 93.57% at 115 VAC and 93.92% at 230 VAC
PATENT INFORMATION
The products and applications illustrated herein (including transformer construction and circuits external to the products) may
be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to
Power Integrations. A complete list of Power Integrations' patents may be found at www.power.com. Power Integrations grants
its customers a license under certain patent rights as set forth at https://www.power.com/company/intellectual-property-
licensing/.

Power Integrations
5245 Hellyer Avenue, San Jose, CA 95138 USA.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.power.com
DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

Table of Contents
  Introduction....................................................................................................... 4 
  Power Supply Specification.................................................................................. 6 
  Schematic.......................................................................................................... 7 
  Circuit Description .............................................................................................. 8 
  Input EMI Filtering ....................................................................................... 8 
  InnoSwitch3-EP IC Primary ........................................................................... 8 
  InnoSwitch3-EP IC Secondary ....................................................................... 8 
  PCB Layout ...................................................................................................... 10 
  Bill of Materials ................................................................................................ 11 
  Transformer Specification ................................................................................. 12 
  Electrical Diagram:..................................................................................... 12 
  Electrical Specifications .............................................................................. 12 
  Materials List ............................................................................................. 12 
  Transformer Build Diagram: ....................................................................... 13 
  Transformer Instruction: ............................................................................ 13 
  Winding Illustrations .................................................................................. 14 
  Common Mode Choke Specifications .................................................................. 21 
  250 H Common Mode Choke .................................................................... 21 
  Electrical Diagram ...................................................................................... 21 
  Electrical Specifications .............................................................................. 21 
  Material List .............................................................................................. 21 
  Common Mode Choke Construction ............................................................. 22 
  Transformer Design Spreadsheet ....................................................................... 23 
  PCB Assembly Instructions............................................................................. 27 
  Transformer and Y Capacitor Assembly ....................................................... 27 
  Performance Data ......................................................................................... 28 
  Full-load Efficiency vs. Line ......................................................................... 28 
  No-Load Input Power ................................................................................. 29 
  Average Efficiency ..................................................................................... 30 
  Average and 10% Efficiency at 90 VAC Input ............................................... 30 
  Average and 10% Efficiency at 115 VAC Input ............................................. 30 
  Average and 10% Efficiency at 230 VAC Input ............................................. 30 
  Average and 10% Efficiency at 265 VAC Input ............................................. 30 
  Regulation (On Board)................................................................................... 31 
  Line Regulation ......................................................................................... 31 
  Load Regulation ........................................................................................ 32 
  Thermal Performance .................................................................................... 33 
  90 VAC, 45 W at 25.3 ºC Ambient ............................................................... 33 
  265 VAC Input, 45 W at 24.8 ºC Ambient .................................................... 34 
  Waveforms ................................................................................................... 35 
  Output Voltage Start-up waveforms: ........................................................... 35 
  Load Transient Response (On Board) .......................................................... 36 
  Switching Waveforms................................................................................. 36 

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

  Drain Voltage and Current ................................................................... 36 


  SR FET Voltage ................................................................................... 37 
  Output Ripple Measurements ...................................................................... 38 
  Ripple Measurement Technique ............................................................ 38 
  Ripple waveforms (Measured on board) ......................................... 39 
  75% Load .................................................................................... 40 
  50% Load .................................................................................... 41 
  25% Load .................................................................................... 42 
  10% Load .................................................................................... 43 
  Conducted EMI ............................................................................................. 44 
  Floating Output (QP / AV) .......................................................................... 44 
  20 V, 100% Load ................................................................................ 44 
  Line Surge .................................................................................................... 45 
  Combination Wave Differential Mode Test.................................................... 45 
  ESD ............................................................................................................. 45 
  Revision History ............................................................................................ 46 

Important Note:
Although this board is designed to satisfy safety isolation requirements, the engineering
prototype has not been agency approved. Therefore, all testing should be performed using
an isolation transformer to provide the AC input to the prototype board.

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

Introduction
This engineering report describes a 20 V / 2.25 A output charger using the InnoSwitch3-
EP INN3678C-H606 IC. This design shows the high power density and efficiency that is
possible due to the high level of integration of the InnoSwitch3-EP controller providing
exceptional performance.

This document contains the power supply specification, schematic, bill of materials,
transformer documentation, printed circuit layout, and performance data.

Figure 1 – Populated Circuit Board Photograph, Top.

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

Figure 2 – Populated Circuit Board Photograph, Bottom.

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

Power Supply Specification


The table below represents the minimum acceptable performance of the design. Actual
performance is listed in the result section.

Description Symbol Min Typ Max Units Comment


Input
Voltage VIN 90 265 VAC 2 Wire – no P.E.
Frequency fLINE 47 50/60 64 Hz
No-load Input Power (230 VAC) 30 mW Measured at 230 VAC.
20 V Output
Output Voltage VOUT 20 V 5%
Output Ripple Voltage VRIPPLE 600 mV On Board.
Output Current IOUT 2.25 A On Board.
Continuous Output Power POUT 45 W
Conducted EMI Meets CISPR22B / EN55022B.
Designed to meet IEC60950 / UL1950
Safety Class II.
Ambient Temperature TAMB 0 40 o
C Enclosed in Adapter, Sea Level.

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

Schematic

Figure 3 – Power Stage Schematic.

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

Circuit Description
Input EMI Filtering
Fuse F1 isolates the circuit and provides protection from component failure, and the
common mode choke L3 and capacitor C1 attenuation for EMI. Bridge rectifier BR1 rectifies
the AC line voltage and provides a full wave rectified DC across the filter capacitor C2.
Capacitors C2, C3, C4 along with L2 forms pi filtering and attenuates differential mode
noise. Capacitor C17 is used to mitigate the common mode EMI.

InnoSwitch3-EP IC Primary
One end of the transformer (T1) primary is connected to the rectified DC bus; the other is
connected to the drain terminal of the switch inside the InnoSwitch3-EP IC (U1). Resistors
R1 and R2 provide Input voltage sense protection for under voltage and over voltage
conditions.

A low cost RCD clamp formed by diode D1, resistors R3 and capacitor C5 limits the peak
drain voltage of U1 at the instant of turn off of the switch inside U1. The clamp helps to
dissipate the energy stored in the leakage reactance of transformer T1.

The IC is self-starting, using an internal high-voltage current source to charge the BPP pin
capacitor (C6) when AC is first applied. During normal operation, the primary-side block is
powered from an auxiliary winding on the transformer T1. Output of the auxiliary (or bias)
winding is rectified using diode D2 and filtered using capacitor C6. Resistor R4 limits the
current being supplied to the BPP pin of the InnoSwitch3-EP IC (U1).

Zener diode VR1 along with R5 and D3 offers primary sensed output overvoltage
protection. In a flyback converter, output of the auxiliary winding tracks the output voltage
of the converter. In case of overvoltage at output of the converter, the auxiliary winding
voltage increases and causes breakdown of VR1 which then causes a current to flow into
the BPP pin of InnoSwitch3-EP IC U1. If the current flowing into the BPP pin increases
above the ISD threshold, the InnoSwitch3-EP controller will latch off and prevent any further
increase in output voltage.

InnoSwitch3-EP IC Secondary
The secondary-side of the InnoSwitch3-EP IC provides output voltage, output current
sensing and drive to a MOSFET providing synchronous rectification. The secondary of the
transformer is rectified by MOSFET Q1 and filtered by capacitor C9. High frequency ringing
during switching transients that would otherwise create radiated EMI is reduced via an
RCD snubber R6, C8 and D4. Diode D4 was used to minimize the dissipation in resistor R6.

The gate of Q1 is turned on by secondary-side controller inside IC U1, based on the winding
voltage sensed via resistor R7 and fed into the FWD pin of the IC. Diode D5 is used to
supply the secondary-side of the IC U1 during power supply start-up.

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

In continuous conduction mode of operation, the power MOSFET is turned off just prior to
the secondary-side commanding a new switching cycle from the primary. In discontinuous
mode of operation, the power MOSFET is turned off when the voltage drop across the
power MOSFET falls below a threshold of approximately 3 mV. Secondary-side control of
the primary-side power switch avoids any possibility of cross conduction of the two
switches and provides extremely reliable synchronous rectification.

The secondary-side of the IC is self-powered from either the secondary winding forward
voltage or the output voltage. Capacitor C10 connected to the BPS pin of InnoSwitch3-EP
IC U1 provides decoupling for the internal circuitry.

Output current is sensed by monitoring the voltage drop across resistor R11 between the
IS and GND pins with a threshold of approximately 35 mV to reduce losses. Capacitor C12
provides filtering on the IS pin from external noise.

The device operates in constant voltage mode before reaching the current limit set by
resistor R11. During constant voltage mode operation, output voltage regulation is
achieved through sensing the output voltage via divider resistors R8 and R10. The voltage
across R10 is fed into the FB pin with an internal reference voltage threshold of 1.265 V.
Output voltage is regulated to achieve a voltage of 1.265 V on the FB pin. Capacitor C12
provides noise filtering of the signal at the FB pin.

The capacitors C15 and C16 are used to reduce the high frequency output voltage ripple.

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

PCB Layout
PCB copper thickness is 2.0 oz.

Figure 4 – Printed Circuit Layout, Top.

Figure 5 – Printed Circuit Layout, Bottom.

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

Bill of Materials
Mfg Part
Item Ref Des Qty Description Mfg
Number
1 BR1 1 RECT BRIDGE, GP, 800 V, 4 A, Z4-D Z4DGP408L-HF Comchip
0.1 F, 20%, 275 VAC, 560 VDC, X2, -40°C ~ 110°C, 5 mm
2 C1 1 R46KF310000P1M KEMET
W x 13 mm L x 11.1 mm H
3 C2 C3 C4 3 22 F, 400 V, Electrolytic, (8 x 20) ERK2GM220F20OT AISHI
4 C5 1 2.2 nF, 630 V, Ceramic, X7R, 1206 C3216X7R2J222K TDK
5 C6 1 22 F, 35 V, Electrolytic, Gen. Purpose, (4 x 12.5) UVR1V220MDD6TP Nichicon
6 C7 1 4.7 F, 16 V, Ceramic, X7R, 0805 CL21B475KOFNNNE Samsung
7 C8 1 1 nF, 200 V, Ceramic, X7R, 0805 08052C102KAT2A AVX
330 F, ±20%, 25 V, Al Organic Polymer, Gen. Purpose, Can,
8 C9 1 A750KS337M1EAAE018 KEMET
18 m, 2000 Hrs @ 105 °C, (8 mm x 13 mm)
9 C10 1 2.2 F, ±10%, 50 V, Ceramic, X7R, 0805 UMK212BB7225KG-T Taiyo Yuden
10 C12 1 1000 pF, ±10%, 50 V, X7R, -55°C ~ 125°C, Low ESL, 0402 C0402C102K5RACTU Kemet
11 C13 2 330 pF, ±10%, 100 V, Ceramic, X7R, 0402 HMK105B7331KV-F Taiyo Yuden
12 C15 C16 2 22 F, ±20%, 25 V, Ceramic, X5R, 0805 (2012 Metric) GRM21BR61E226ME44L Murata
13 C17 1 1 nF, 500 VAC, Ceramic, Y1 VY1102M35Y5UG63V0 Visha
14 D1 1 800 V, 1 A, Rectifier, POWERDI123 DFLR1800-7 Diodes, Inc.
Micro
15 D2 1 100 V, 1 A, Fast Recovery, SOD-123FL UFM12PL-TP
Commercia
16 D3 D4 D5 3 100 V, 0.2 A, Fast Switching, 50 ns, SOD-323 BAV19WS-7-F Diodes, Inc.
17 F1 1 3.15 A, 250 V, Slow, RST 507-1181 Belfuse
18 FL1 FL2 2 Flying Lead, Hole size 70mils N/A N/A
19 FL3 FL4 2 Flying Lead, Hole size 50mils N/A N/A
20 JP1 1 Wire Jumper, Insulated, #24 AWG, 0.7 in C2003A-12-02 Gen Cable
21 JP2 1 Wire Jumper, Insulated, #28 AWG, 0.5 in 2842/1 WH005 Alpha Wire
22 JP3 JP4 2 Wire Jumper, Insulated, #28 AWG, 0.3 in 2842/1 WH005 Alpha Wire
23 L2 1 Inductor, 32 H @ 10 kHz, 2.6A, 0.045ohm, Toroidal, 7447052 Wurth
Power
24 L3 1 250 H, Toroidal CMC, custom, wound on 32-00275-00 core. 32-00367-00
Integrations
MOSFET, N-CH, 100V, 48A (Tc), 113.5W (Tc), DFN5X6, 8-DFN Alpha & Omega
25 Q1 1 AON6220
(5x6) Semi
26 R1 1 RES, 2 M, 5%, 1/8 W, Carbon Film CF18JT2M00 Stackpole
27 R2 1 RES, 1.80 M, 1%, 1/4 W, Thick Film, 1206 ERJ-8ENF1804V Panasonic
28 R3 1 RES, 330 k, 5%, 1/4 W, Thick Film, 1206 ERJ-8GEYJ334V Panasonic
29 R4 1 RES, 5.6 k, 5%, 1/10 W, Thick Film, 0603 ERJ-3GEYJ562V Panasonic
30 R5 1 RES, 47 , 5%, 1/10 W, Thick Film, 0603 ERJ-3GEYJ470V Panasonic
31 R6 1 RES, 5.1 , 5%, 1/4 W, Carbon Film CFR-25JB-5R1 Yageo
32 R7 1 RES, 300 , 5%, 1/10 W, Thick Film, 0603 ERJ-3GEYJ301V Panasonic
33 R8 1 RES, 169.0 k, 1%, 1/10 W, Thick Film, 0402 ERJ-2RKF1693X Panasonic
34 R10 1 RES, 11.3 k, 1%, 1/10 W, Thick Film, 0402 ERJ-2RKF1132X Panasonic
35 R11 1 RES, 0.013 , 0.5 W, 1%, 0805 ERJ-6BWFR013V Panasonic
Bobbin, ATQ23.7/14, Horizontal, 4 pins. Mates with core 99-
36 T1 1
00072-00.
37 TP1 1 Test Point, WHT, THRU-HOLE MOUNT 5012 Keystone
38 TP2 TP4 2 Test Point, BLK, THRU-HOLE MOUNT 5011 Keystone
39 TP3 1 Test Point, RED, THRU-HOLE MOUNT 5010 Keystone
Power
40 U1 1 InnoSwitch3-EP InSOP24D INN3678C-H606
Integrations
41 VR1 1 DIODE ZENER 12 V 500 mW SOD123 MMSZ5242B-7-F Diodes, Inc.

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

Transformer Specification
Electrical Diagram:
FL4
FL1
WD6: 2nd Primary
WD4: Secondary
14T – #26 AWG
4T – 4#24AWG_TIW

FL2
WD1: 1st Primary
14T - #26 AWG FL3

WD5: Shield2
6
10T – 3 x #34 AWG
1
WD2: Bias NC

2T – 2 x #34 AWG

FL3 Core Groundig w/ bus wire #28AWG

WD3: Shield1

7T –4 x #34 AWG

NC

Electrical Specifications
Electrical
1 second, 60 Hz, from pins 6-FL4 to FL1-FL2. 3000 VAC
Strength
Primary
Pins 6-FL4, all other open, measured at 100 kHz, 0.4 VRMS. 493 H ±5%
Inductance
Resonant
Pins 6-FL4, all other open. 2,000 kHz (Min.)
Frequency
Primary Leakage Pins 6-FL4, with FL1-FL2 shorted, measured at 100 kHz. 5.0 H (Max.)

Materials List
Item Description
[1] Core: ATQ23.7-14, PI# 99-00072-00: or equivalent. Gapped ALG: 540nH/T².
[2] Bobbin: ATQ23.7-14, Horizontal, 3pins (3/0), PI#: 25-01171-00.
[3] Magnet Wire: #26 AWG, Double Coated.
[4] Magnet Wire: #34 AWG, Double Coated.
[5] Magnet Wire: #24 AWG, Triple Insulated Wire.
[6] Tape: 3M 1298 Polyester Film, 1 mil thick, 6.8 mm Wide.
[7] Tape: 3M 1298 Polyester Film, 1 mil thick, 20.0 mm Wide.
[8] Bus wire: #28 AWG, Alfa Wire, Tinned Copper; or Equivalent.
[9] Varnish: Dolph BC-359; or Equivalent.

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

Transformer Build Diagram:


FL1 FL2

WD6: 2nd Primary 14T – #26 AWG FL4

WD5: Shield2 10T – 3 x #34 AWG FL3 NC

4T – 2 x #24AWG_TIW
WD4: Secondary
4T – 2 x #24AWG_TIW

WD3: Shield 1 7T – 4 x #34 AWG FL3 NC


(wound interleave with…)
WD2: Bias 2T – 2 X #34 AWG 1

WD1: 1st Primary 14T - #26 AWG 6

Transformer Instruction:
Winding Position the bobbin Item [2] on the mandrel, pin 1-3 on the left and pin 4-6 on the right.
preparation Winding direction is clock-wise direction for forward direction.
WD1 Start at pin 6, wind 14 turns of wire Item [3], from right to left in 1 layer. At the last turn,
1st Primary exit the wire, and leave enough length of wire-floating for WD6-2nd Primary.
Insulation 1 layer of tape Item [6].
Use 2 wires Item [4] start at pin 1 for Bias winding, also use 4 wires same Item [4]
floating with 30 mm long, start as FL3 for Shield1 winding. Wind all 6 wires in parallel, at
WD2: Bias the 2nd turn:
& - place 1 small piece of tape Item [6] to hold all wires, then bring 2 wires for Bias
WD3: Shield1 winding to the left, and floating 30mm long to end this winding as FL3.
- continue winding 5 more turns for Shield 1and cut short these 4 wires as No-
Connect.
Insulation 1 layer of tape Item [6].
Start from left side of bobbin, close to pin2, use 2 wires Item [5], leaving ~30 mm
floating, and mark as FL1. Wind 4 turns in 1 layer, from left to right, at the last turn exit
WD4
the wires to the right of bobbin close to pin 5, also leaving ~ 30.0mm floating, and mark
Secondary
FL2. Repeat the same winding above on top previous winding, also mark start and finish
ends as FL1 and FL2.
Insulation 1 layer of tape Item [6].
WD5 Use 3 wires Item [4]; floating with 30 mm long, start as FL3, wind 10 turns from left to
Shield2 right. At the last turn, cut short to leave as No-Connect.
Insulation 1 layer of tape Item [6].
WD6 Use floating wire from WD1-1st Primary, wind 14 turns from left to right. At the last turn,
2nd Primary exit the wire, leave 30 mm floating and terminate as FL4.
Insulation 2 layers of tape Item [6] to secure all windings.
Gap core halves to get 493 H. Remove pins: 2, 3, 4, and 5. Use bus wire Item [8] lean
along core halves and secure it with tape. Varnish with Item [9]. Place 2 layers of tape
Finish Item [7] to wrap the right side of transformer.
Pull wires FL2 to the left, the wrap 1 turn of tape Item [6] in the center of transformer
(see pictures beside).

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

Winding Illustrations

Position the bobbin Item [2]


on the mandrel, pin 1-3 on
the left and pin 4-6 on the
Winding Preparation right.
Winding direction is clock-
wise direction for forward
direction.

Start at pin 6, wind 14 turns


of wire Item [3], from right
WD1 to left in 1 layer. At the last
1st Primary turn, exit the wire, and leave
enough length of wire-
floating for WD6-2nd Primary.

Insulation 1 layer of tape Item [6].

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

FL3

Use 2 wires Item [4] start at


FL3 pin 1 for Bias winding, also
use 4 wires same Item [4]
floating with 30 mm long,
start as FL3 for Shield1
winding. Wind all 6 wires in
parallel, at the 2nd turn:
- place 1 small piece
of tape Item [6] to
WD2: Bias
hold all wires, then
&
bring 2 wires for Bias
WD3: Shield1
winding to the left,
FL3
and floating 30 mm
long to end this
winding as FL3.
- continue winding 5
more turns for Shield
1and cut short these
4 wires as No-
Connect.

FL3

NC

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Insulation 1 layer of tape Item [6].

FL1

Start from left side of bobbin,


close to pin 2, use 2 wires
Item [5], leaving ~30 mm
floating, and mark as
FL1
FL1.Wind 4 turns in 1 layer,
from left to right, at the last
WD4 FL2 turn exit the wires to the
Secondary right of bobbin close to pin 5,
also leaving ~30.0 mm
floating, and mark FL2.
Repeat the same winding
above on top previous
winding, also mark start and
finish ends as FL1 and FL2.

FL1
FL2

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

FL1
FL2

Insulation 1 layer of tape Item [6].

Use 3 wires Item [4]; floating


with 30 mm long, start as
WD5 FL3, wind 10 turns from left
Shield2 to right. At the last turn, cut
short to leave as No-
Connect.

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

NC

Insulation 1 layer of tape Item [6].

Use floating wire from WD1-


1st Primary, wind 14 turns
WD6 from left to right. At the last
2nd Primary turn, exit the wire, leave 30
mm floating and terminate as
FL4.

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

2 layers of tape Item [6] to


Insulation
secure all windings.

Gap core halves to get 493


H.
Remove pins: 2, 3, 4, and 5.
Use bus wire Item [8] lean
along core halves and secure
it with tape.
Varnish with Item [9].
Finish
Place 2 layers of tape Item
[7] to wrap the right side of
transformer.
Pull wires FL2 to the left, the
wrap 1 turn of tape Item [6]
in the center of transformer
(see pictures beside).

Wrap 2 layers of tape


Item [8]

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

1 turn of tape Item [6]

FL2

FL2
FL1

Finished Transformer

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

Common Mode Choke Specifications


250 H Common Mode Choke

Electrical Diagram

Figure 6 – Choke Electrical Diagram.

Electrical Specifications
Winding Pin 1 - pin 2 (pin 3 - pin 4), all other windings open, measured at
250 H ±20%
Inductance 100 kHz, 0.4 VRMS.

Material List
Item Description
[1] Toroidal Core: 35T0375-10H, PI#: 32-00275-00.
[2] Triple Insulated Wire: #27 AWG, Triple Coated.
[3] Magnet Wire: #27 AWG, Double Coated.

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DER-909 45 W InnoSwitch3-EP Charger 22-Sep-22

Common Mode Choke Construction

Mark the start end of the winding as 1 and wind 10 turns of Item [2]
on Item [1]. Mark the end of this winding as 2

Repeat the same procedure as above for the other winding using
Item [3], making sure that the start/end and the direction of winding
is the same as the first winding.
Varnish using Item [4]. Mark the start of this winding as 3 and the
end as 4.

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Transformer Design Spreadsheet


ACDC_InnoSwitch3-
EP_Flyback_050420;
1 Rev.1.5; Copyright INPUT INFO OUTPUT UNITS InnoSwitch3 EP Flyback Design Spreadsheet
Power Integrations
2020
2 APPLICATION VARIABLES
3 VIN_MIN 90 90 V Minimum AC input voltage
4 VIN_MAX 265 V Maximum AC input voltage
5 VIN_RANGE UNIVERSAL Range of AC input voltage
6 LINEFREQ 60 Hz AC Input voltage frequency
7 CAP_INPUT 66.0 66.0 uF Input capacitor
8 VOUT 20.00 20.00 V Output voltage at the board
9 CDC 0.00 mV Cable drop compensation desired at full load
10 IOUT 2.250 2.250 A Output current
11 POUT 45.00 W Output power
AC-DC efficiency estimate at full load given that the
12 EFFICIENCY 0.92 0.92 converter is switching at the valley of the rectified
minimum input AC voltage
13 FACTOR_Z 0.50 Z-factor estimate
14 ENCLOSURE ADAPTER ADAPTER Power supply enclosure
18 PRIMARY CONTROLLER SELECTION
19 ILIMIT_MODE INCREASED INCREASED Device current limit mode
20 DEVICE_GENERIC INN36X8 INN36X8 Generic device code
21 DEVICE_CODE INN3678C Actual device code
Power capability of the device based on thermal
22 POUT_MAX 65 W
performance
23 RDSON_100DEG 1.02 Ω Primary switch on time drain resistance at 100 degC
24 ILIMIT_MIN 1.767 A Minimum current limit of the primary switch
25 ILIMIT_TYP 1.900 A Typical current limit of the primary switch
26 ILIMIT_MAX 2.033 A Maximum current limit of the primary switch
27 VDRAIN_BREAKDOWN 750 V Device breakdown voltage
28 VDRAIN_ON_PRSW 0.57 V Primary switch on time drain voltage
29 VDRAIN_OFF_PRSW 583.4 V Peak drain voltage on the primary switch during turn-off
33 WORST CASE ELECTRICAL PARAMETERS
Maximum switching frequency at full load and valley of
34 FSWITCHING_MAX 70000 70000 Hz
the rectified minimum AC input voltage
Secondary voltage reflected to the primary when the
35 VOR 140.0 140.0 V
primary switch turns off
36 VMIN 84.83 V Valley of the minimum input AC voltage at full load
37 KP 0.93 Measure of continuous/discontinuous mode of operation
38 MODE_OPERATION CCM Mode of operation
39 DUTYCYCLE 0.624 Primary switch duty cycle
40 TIME_ON 11.41 us Primary switch on-time
41 TIME_OFF 5.37 us Primary switch off-time
42 LPRIMARY_MIN 468.2 uH Minimum primary inductance
43 LPRIMARY_TYP 492.9 uH Typical primary inductance
44 LPRIMARY_TOL 5.0 % Primary inductance tolerance
45 LPRIMARY_MAX 517.5 uH Maximum primary inductance
47 PRIMARY CURRENT
48 IPEAK_PRIMARY 1.884 A Primary switch peak current
49 IPEDESTAL_PRIMARY 0.109 A Primary switch current pedestal
50 IAVG_PRIMARY 0.557 A Primary switch average current
51 IRIPPLE_PRIMARY 1.884 A Primary switch ripple current
52 IRMS_PRIMARY 0.837 A Primary switch RMS current
54 SECONDARY CURRENT

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55 IPEAK_SECONDARY 13.188 A Secondary winding peak current


56 IPEDESTAL_SECONDARY 0.765 A Secondary winding current pedestal
57 IRMS_SECONDARY 4.543 A Secondary winding RMS current
61 TRANSFORMER CONSTRUCTION PARAMETERS
62 CORE SELECTION
The transformer windings may not fit: pick a bigger core
63 CORE CUSTOM Info CUSTOM or bobbin and refer to the Transformer Parameters tab
for fit calculations
64 CORE CODE ATQ23.7/14 ATQ23.7/14 Core code
65 AE 103.00 103.00 mm^2 Core cross sectional area
66 LE 36.00 36.00 mm Core magnetic path length
nH/turn
67 AL 5100 5100 Ungapped core effective inductance
s^2
68 VE 3300.0 3300.0 mm^3 Core volume
69 BOBBIN AT23.7/14 AT23.7/14 Bobbin
70 AW 25.00 25.00 mm^2 Window area of the bobbin
71 BW 6.60 6.60 mm Bobbin width
Safety margin width (Half the primary to secondary
72 MARGIN 0.0 mm
creepage distance)
74 PRIMARY WINDING
75 NPRIMARY 28 Primary turns
76 BPEAK 3734 Gauss Peak flux density
77 BMAX 3334 Gauss Maximum flux density
78 BAC 1667 Gauss AC flux density (0.5 x Peak to Peak)
nH/turn
79 ALG 629 Typical gapped core effective inductance
s^2
80 LG 0.181 mm Core gap length
81 LAYERS_PRIMARY 2 Number of primary layers
82 AWG_PRIMARY 26 AWG Primary winding wire AWG
OD_PRIMARY_INSULATE
83 0.465 mm Primary winding wire outer diameter with insulation
D
84 OD_PRIMARY_BARE 0.405 mm Primary winding wire outer diameter without insulation
85 CMA_PRIMARY 304 Cmil/A Primary winding wire CMA
87 SECONDARY WINDING
88 NSECONDARY 4 4 Secondary turns
89 AWG_SECONDARY 20 AWG Secondary winding wire AWG
OD_SECONDARY_INSULA
90 1.118 mm Secondary winding wire outer diameter with insulation
TED
Secondary winding wire outer diameter without
91 OD_SECONDARY_BARE 0.812 mm
insulation
92 CMA_SECONDARY 225 Cmil/A Secondary winding wire CMA
94 BIAS WINDING
95 NBIAS 2 Bias turns
99 PRIMARY COMPONENTS SELECTION
100 LINE UNDERVOLTAGE
101 BROWN-IN REQURED 72.0 V Required AC RMS line voltage brown-in threshold
Connect two 1.82 MOhm resistors to the V-pin for the
102 RLS 3.64 MΩ
required UV/OV threshold
103 BROWN-IN ACTUAL 73.0 V Actual AC RMS brown-in threshold
104 BROWN-OUT ACTUAL 66.0 V Actual AC RMS brown-out threshold
106 LINE OVERVOLTAGE
107 OVERVOLTAGE_LINE 304.2 V Actual AC RMS line over-voltage threshold
109 BIAS DIODE
The rectified bias voltage maybe too low to supply the
110 VBIAS 9.0 Info 9.0 V BP pin: Increase the rectified bias voltage to a value
higher than 10V
111 VF_BIAS 0.70 V Bias winding diode forward drop

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Bias diode reverse voltage (not accounting parasitic


112 VREVERSE_BIASDIODE 35.67 V
voltage ring)
113 CBIAS 22 uF Bias winding rectification capacitor
114 CBPP 4.70 uF BPP pin capacitor
118 SECONDARY COMPONENTS
Upper feedback resistor (connected to the first output
119 RFB_UPPER 100.00 kΩ
voltage)
120 RFB_LOWER 6.81 kΩ Lower feedback resistor
121 CFB_LOWER 330 pF Lower feedback resistor decoupling capacitor
125 MULTIPLE OUTPUT PARAMETERS
126 OUTPUT 1
127 VOUT1 20.00 V Output 1 voltage
128 IOUT1 2.25 A Output 1 current
129 POUT1 45.00 W Output 1 power
Root mean squared value of the secondary current for
130 IRMS_SECONDARY1 4.543 A
output 1
131 IRIPPLE_CAP_OUTPUT1 3.947 A Current ripple on the secondary waveform for output 1
132 AWG_SECONDARY1 20 AWG Wire size for output 1
OD_SECONDARY1_INSUL Secondary winding wire outer diameter with insulation
133 1.118 mm
ATED for output 1
Secondary winding wire outer diameter without
134 OD_SECONDARY1_BARE 0.812 mm
insulation for output 1
135 CM_SECONDARY1 909 Cmils Bare conductor effective area in circular mils for output 1
136 NSECONDARY1 4 Number of turns for output 1
SRFET reverse voltage (not accounting parasitic voltage
137 VREVERSE_RECTIFIER1 73.34 V
ring) for output 1
138 SRFET1 AONS62922 AONS62922 Secondary rectifier (Logic MOSFET) for output 1
139 VF_SRFET1 0.016 V SRFET on-time drain voltage for output 1
140 VBREAKDOWN_SRFET1 120 V SRFET breakdown voltage for output 1
SRFET on-time drain resistance at 25degC and VGS=4.4V
141 RDSON_SRFET1 7.0 mΩ
for output 1
143 OUTPUT 2
144 VOUT2 0.00 V Output 2 voltage
145 IOUT2 0.000 A Output 2 current
146 POUT2 0.00 W Output 2 power
Root mean squared value of the secondary current for
147 IRMS_SECONDARY2 0.000 A
output 2
148 IRIPPLE_CAP_OUTPUT2 0.000 A Current ripple on the secondary waveform for output 2
149 AWG_SECONDARY2 0 AWG Wire size for output 2
OD_SECONDARY2_INSUL Secondary winding wire outer diameter with insulation
150 0.000 mm
ATED for output 2
Secondary winding wire outer diameter without
151 OD_SECONDARY2_BARE 0.000 mm
insulation for output 2
152 CM_SECONDARY2 0 Cmils Bare conductor effective area in circular mils for output 2
153 NSECONDARY2 0 Number of turns for output 2
SRFET reverse voltage (not accounting parasitic voltage
154 VREVERSE_RECTIFIER2 0.00 V
ring) for output 2
155 SRFET2 AUTO NA Secondary rectifier (Logic MOSFET) for output 2
156 VF_SRFET2 NA V SRFET on-time drain voltage for output 2
157 VBREAKDOWN_SRFET2 NA V SRFET breakdown voltage for output 2
SRFET on-time drain resistance at 25degC and VGS=4.4V
158 RDSON_SRFET2 NA mΩ
for output 2
160 OUTPUT 3
161 VOUT3 0.00 V Output 3 voltage
162 IOUT3 0.000 A Output 3 current
163 POUT3 0.00 W Output 3 power
164 IRMS_SECONDARY3 0.000 A Root mean squared value of the secondary current for

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output 3
165 IRIPPLE_CAP_OUTPUT3 0.000 A Current ripple on the secondary waveform for output 3
166 AWG_SECONDARY3 0 AWG Wire size for output 3
OD_SECONDARY3_INSUL Secondary winding wire outer diameter with insulation
167 0.000 mm
ATED for output 3
Secondary winding wire outer diameter without
168 OD_SECONDARY3_BARE 0.000 mm
insulation for output 3
169 CM_SECONDARY3 0 Cmils Bare conductor effective area in circular mils for output 3
170 NSECONDARY3 0 Number of turns for output 3
SRFET reverse voltage (not accounting parasitic voltage
171 VREVERSE_RECTIFIER3 0.00 V
ring) for output 3
172 SRFET3 AUTO NA Secondary rectifier (Logic MOSFET) for output 3
173 VF_SRFET3 NA V SRFET on-time drain voltage for output 3
174 VBREAKDOWN_SRFET3 NA V SRFET breakdown voltage for output 3
SRFET on-time drain resistance at 25degC and VGS=4.4V
175 RDSON_SRFET3 NA mΩ
for output 3
177 PO_TOTAL 45.00 W Total power of all outputs
If negative output exists, enter the output number; e.g.
178 NEGATIVE OUTPUT N/A N/A
If VO2 is negative output, select 2
182 TOLERANCE ANALYSIS
183 USER_VAC 115 115 V Input AC RMS voltage corner to be evaluated
184 USER_ILIMIT TYP 1.900 A Current limit corner to be evaluated
185 USER_LPRIMARY TYP 492.9 uH Primary inductance corner to be evaluated
186 MODE_OPERATION DCM Mode of operation
187 KP 1.572 Measure of continuous/discontinuous mode of operation
Switching frequency at full load and valley of the rectified
188 FSWITCHING 60132 Hz
minimum AC input voltage
189 VMIN 129.78 V Valley of the minimum input AC voltage at full load
190 DUTYCYCLE 0.408 Steady state duty cycle
191 TIME_ON 6.78 us Primary switch on-time
192 TIME_OFF 9.85 us Primary switch off-time
193 IPEAK_PRIMARY 1.780 A Primary switch peak current
194 IPEDESTAL_PRIMARY 0.000 A Primary switch current pedestal
195 IAVERAGE_PRIMARY 0.363 A Primary switch average current
196 IRIPPLE_PRIMARY 1.780 A Primary switch ripple current
197 IRMS_PRIMARY 0.656 A Primary switch RMS current
198 BPEAK 3323 Gauss Peak flux density
199 BMAX 3042 Gauss Maximum flux density
200 BAC 1521 Gauss AC flux density (0.5 x Peak to Peak)

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PCB Assembly Instructions


Transformer and Y Capacitor Assembly

Cut transformer flying leads to required length and tin the Assemble the Y-cap on the board as shown in picture
flying leads

Insert the transformer flying leads on to the board Assemble C2, C3 and C4 after assembling the transformer

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Performance Data
All the performance data have been taken on the board unless otherwise specifically
mentioned.

Full-load Efficiency vs. Line


95

94

93
Efficiency (%)

92

91

90

89

88
80 105 130 155 180 205 230 255 280
Input Voltage (VAC)

Figure 7 – Full-load Efficiency vs. Line, Room Ambient.

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No-Load Input Power


25

24
Input Power (mW)

23

22

21

20

19
90 115 230 265
Input Voltage (VAC)

Figure 8 – No-Load Input Power vs. Input Line Voltage, Room Temperature.

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Average Efficiency
10%
Test Average Average
Load
Output DOE6 CoC v5 CoC v5
Model Power
Voltage Limit Tier 2 Tier 2
(V) [W]
(V) (%) (%) (%)
20 >6 45 87.73 88.85 78.85%

Average and 10% Efficiency at 90 VAC Input


POUT Efficiency Average Efficiency
% Load
(W) (%) (%)
100 44.57 92.72
75 33.67 93.04
92.64
50 22.55 93.01
25 11.29 91.78
10 4.53 90.12

Average and 10% Efficiency at 115 VAC Input


POUT Efficiency Average Efficiency
% Load
(W) (%) (%)
100 44.84 93.57
75 33.75 93.19
93.1
50 22.56 93.36
25 11.30 92.29
10 4.53 89.06

Average and 10% Efficiency at 230 VAC Input


POUT Efficiency Average Efficiency
% Load
(W) (%) (%)
100 44.98 93.92
75 33.80 93.69
93.15
50 22.58 93.25
25 11.30 91.74
10 4.54 87.55

Average and 10% Efficiency at 265 VAC Input


POUT Efficiency Average Efficiency
% Load
(W) (%) (%)
100 44.98 93.74
75 33.80 93.49
92.88
50 22.59 93.00
25 11.30 91.31
10 4.54 85.52

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Regulation (On Board)


Line Regulation
25

20
Output Voltage (V)

15

10

0
80 105 130 155 180 205 230 255 280
Input Voltage (VAC)

Figure 9 – Line Regulation.

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Load Regulation
25

20
Output Voltage (V)

15

90 VAC
115 VAC
10
230 VAC
265 VAC

0
0 10 20 30 40 50 60 70 80 90 100
Load Current (%)

Figure 10 – Load Regulation.

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Thermal Performance
Thermal performance is measured inside an enclosed acrylic box at room temperature.
Thermal data was captured after soaking for 2 hours.

90 VAC, 45 W at 25.3 ºC Ambient

Figure 11 – Thermal Performance at 90 VAC Input.

Component Max Temperature (ºC)


Primary Snubber Diode (D1) 79.1
Primary Snubber Resistor (R3) 76.1
Transformer Core (T1) 70.4
Transformer Winding (T1) 73.5
Bridge Rectifier (BR1) 82.2
InnoSwitch3-EP (U1) 88.3
Inductor (L2) 64.7
Bulk Capacitor (C3) 66.8
SR FET (Q1) 69.6
Output Capacitor (C9) 51.6

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265 VAC Input, 45 W at 24.8 ºC Ambient

Figure 12 – Thermal Performance at 265 VAC Input.

Component Max Temperature (ºC)


Primary Snubber Diode (D1) 71.8
Primary Snubber Resistor (R3) 68.9
Transformer Core (T1) 70.3
Transformer Winding (T1) 73
Bridge Rectifier (BR1) 53
InnoSwitch3-EP (U1) 75.9
Inductor (L2) 50.2
Bulk Capacitor (C3) 57.1
SR FET (Q1) 69.6
Output Capacitor (C9) 51.6

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Waveforms
Output Voltage Start-up waveforms:

Figure 13 – Output Voltage Start-up – 100% Load 90 Figure 14 – Output Voltage Start-up – 100% Load 265
VAC. VAC.
C4 – Output Voltage – 10 V / div. C4 – Output Voltage – 5 V / div.
C2 – Output Current – 2 A / div. 10 ms / div. C2 – Output Current – 1 A / div. 10 ms / div.

Figure 15 – Output Voltage Start-up – No-Load 90 VAC. Figure 16 – Output Voltage Start-up – No-Load 265 VAC.
C4 – Output Voltage – 5 V / div. C4 – Output Voltage – 5 V / div.
C2 – Output Current – 1 A / div. 10 ms / div. C2 – Output Current – 1 A / div. 10 ms / div.

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Load Transient Response (On Board)

Figure 17 – Transient Response. Figure 18 – Transient Response.


90VAC, 0% – 100% Load Step. 265VAC, 0% – 100% Load Step.
VMIN: 19.41 V, VMAX: 20.18 V. VMIN: 19.43 V, VMAX: 20.18 V.
C1: VOUT, 2 V / div., 5 ms / div. C1: VOUT, 2 V / div., 5 ms / div.
C2: ILOAD, 1 A / div. C2: ILOAD, 1 A / div.

Switching Waveforms

Drain Voltage and Current

Figure 19 – Drain Voltage and Current Waveforms. Figure 20 – Drain Voltage and Current Waveforms.
90 VAC, 100% Load, (310 VMAX). 265 VAC, 100% Load, (563 VMAX).
C4/Z4: VDRAIN, 100 V / div., 2 ms / div. C4/Z4: VDRAIN, 200 V / div., 2 ms / div.
C2/Z2: IDRAIN, 1 A / div. C2/Z2: IDRAIN, 1 A / div.

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SR FET Voltage

Figure 21 – SR FET Voltage Waveforms. Figure 22 – SR FET Voltage Waveforms.


90 VAC, 100% Load, (54.7 VMAX). 265 VAC, 100% Load, (83.3 VMAX).
C1: SR_VDRAIN, 20 V / div., 5 ms / div. C1: SR_VDRAIN, 20 V / div., 5 ms / div.

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Output Ripple Measurements

Ripple Measurement Technique


For DC output ripple measurements, a modified oscilloscope test probe must be utilized in
order to reduce spurious signals due to pick-up. Details of the probe modification are
provided in the Figures below.

The 4987BA probe adapter is affixed with two capacitors tied in parallel across the probe
tip. The capacitors include one (1) 0.1 F/50 V ceramic type and one (1) 47 F/50 V
aluminum electrolytic. The aluminum electrolytic type capacitor is polarized, so proper
polarity across DC outputs must be maintained (see below).

Probe Ground

Probe Tip

Figure 23 – Oscilloscope Probe Prepared for Ripple Measurement. (End Cap and Ground Lead Removed)

Figure 24 – Oscilloscope Probe with Probe Master (www.probemaster.com) 4987A BNC Adapter.
(Modified with wires for ripple measurement, and two parallel decoupling capacitors added)

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Ripple waveforms (Measured on board)

Figure 25 – Output Ripple.(PK-PK – 591 mV). Figure 26 – Output Ripple.(PK-PK – 511 mV).
90 VAC Input, 100% Load. 115 VAC Input, 100% Load.
VOUT, 200 mV / div., 5 ms / div. VOUT, 200 mV / div., 5 ms / div.

Figure 27 – Output Ripple.(PK-PK – 458 mV). Figure 28 – Output Ripple.(PK-PK – 452 mV).
230 VAC Input, 100% Load. 265 VAC Input, 100% Load.
VOUT, 200 mV / div., 5 ms / div. VOUT, 200 mV / div., 5 ms / div.

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75% Load

Figure 29 – Output Ripple.(PK-PK – 518 mV). Figure 30 – Output Ripple.(PK-PK – 445 mV).
90 VAC Input, 75% Load. 115 VAC Input, 75% Load.
VOUT, 200 mV / div., 5 ms / div. VOUT, 200 mV / div., 5 ms / div.

Figure 31 – Output Ripple.(PK-PK – 432 mV). Figure 32 – Output Ripple.(PK-PK – 432 mV).
230 VAC Input, 75% Load. 265 VAC Input, 75% Load.
VOUT, 200 mV / div., 5 ms / div. VOUT, 200 mV / div., 5 ms / div.

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50% Load

Figure 33 – Output Ripple.(PK-PK – 392 mV). Figure 34 – Output Ripple.(PK-PK – 372 mV).
90 VAC Input, 50% Load. 115 VAC Input, 50% Load.
VOUT, 200 mV / div., 5 ms / div. VOUT, 200 mV / div., 5 ms / div.

Figure 35 – Output Ripple.(PK-PK – 379 mV). Figure 36 – Output Ripple.(PK-PK – 379 mV).
230 VAC Input, 50% Load. 265 VAC Input, 50% Load.
VOUT, 200 mV / div., 5 ms / div. VOUT, 200 mV / div., 5 ms / div.

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25% Load

Figure 37 – Output Ripple.(PK-PK – 306 mV). Figure 38 – Output Ripple.(PK-PK – 319 mV).
90 VAC Input, 25% Load. 115 VAC Input, 25% Load.
VOUT, 200 mV / div., 5 ms / div. VOUT, 200 mV / div., 5 ms / div.

Figure 39 – Output Ripple.(PK-PK – 339 mV). Figure 40 – Output Ripple.(PK-PK – 345 mV).
230 VAC Input, 25% Load. 265 VAC Input, 25% Load.
VOUT, 200 mV / div., 5 ms / div. VOUT, 200 mV / div., 5 ms / div.

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10% Load

Figure 41 – Output Ripple.(PK-PK – 239 mV). Figure 42 – Output Ripple.(PK-PK – 239 mV).
90 VAC Input, 10% Load. 115 VAC Input, 10% Load.
VOUT, 200 mV / div., 5 ms / div. VOUT, 200 mV / div., 5 ms / div.

Figure 43 – Output Ripple.(PK-PK – 239 mV). Figure 44 – Output Ripple.(PK-PK – 246 mV).
230 VAC Input, 10% Load. 265 VAC Input, 10% Load.
VOUT, 200 mV / div., 5 ms / div. VOUT, 200 mV / div., 5 ms / div.

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Conducted EMI
Floating Output (QP / AV)

20 V, 100% Load

Figure 45 – Floating Ground EMI, 20 V / 100% Load Figure 46 – Floating Ground EMI, 20 V / 100% Load
for 115 VAC. for 230 VAC.

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Line Surge
Combination Wave Differential Mode Test
Passed ±1 kV.
Surge Voltage Phase Angle Generator Impedance
Number of Strikes Test Result
(kV) (°) (W)
±1 0 2 10 PASS
±1 90 2 10 PASS
±1 180 2 10 PASS
±1 270 2 10 PASS
Note: Input line OVP gets triggered when the test is done at no-load.

ESD
Passed ±15 kV air discharge and ±8 kV contact discharge at both output positive and
negative terminals, under both full-load and no-load conditions.

Air Discharge
Number of Strikes Test Result
(kV)
+15 10 PASS
-15 10 PASS

Contact Discharge
Number of Strikes Test Result
(kV)
+8 10 PASS
-8 10 PASS

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Revision History
Date Author Revision Description & Changes Reviewed
22-Sep-22 SS 1.0 First draft Apps & Mktg

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For the latest updates, visit our website: www.power.com


Reference Designs are technical proposals concerning how to use Power Integrations’ gate drivers in particular applications and/or with certain
power modules. These proposals are “as is” and are not subject to any qualification process. The suitability, implementation and qualification are
the sole responsibility of the end user. The statements, technical information and recommendations contained herein are believed to be accurate
as of the date hereof. All parameters, numbers, values and other technical data included in the technical information were calculated and
determined to our best knowledge in accordance with the relevant technical norms (if any). They may base on assumptions or operational
conditions that do not necessarily apply in general. We exclude any representation or warranty, express or implied, in relation to the accuracy or
completeness of the statements, technical information and recommendations contained herein. No responsibility is accepted for the accuracy or
sufficiency of any of the statements, technical information, recommendations or opinions communicated and any liability for any direct, indirect or
consequential loss or damage suffered by any person arising therefrom is expressly disclaimed.

Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power Integrations
does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS MAKES NO WARRANTY
HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS.

Patent Information
The products and applications illustrated herein (including transformer construction and circuits’ external to the products) may be covered by one
or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of
Power Integrations’ patents may be found at www.power.com. Power Integrations grants its customers a license under certain patent rights as
set forth at http://www.power.com/ip.htm.

Power Integrations, the Power Integrations logo, CAPZero, ChiPhy, CHY, DPA-Switch, EcoSmart, E-Shield, eSIP, eSOP, HiperPLC, HiperPFS,
HiperTFS, InnoSwitch, Innovation in Power Conversion, InSOP, LinkSwitch, LinkZero, LYTSwitch, SENZero, TinySwitch, TOPSwitch, PI, PI Expert,
SCALE, SCALE-1, SCALE-2, SCALE-3 and SCALE-iDriver, are trademarks of Power Integrations, Inc. Other trademarks are property of their
respective companies. ©2019, Power Integrations, Inc.

Power Integrations Worldwide Sales Support Locations

WORLD HEADQUARTERS GERMANY (AC-DC/LED Sales) ITALY SINGAPORE


5245 Hellyer Avenue Einsteinring 24 Via Milanese 20, 3rd. Fl. 51 Newton Road,
San Jose, CA 95138, USA. 85609 Dornach/Aschheim 20099 Sesto San Giovanni (MI) Italy #19-01/05 Goldhill Plaza
Main: +1-408-414-9200 Germany Phone: +39-024-550-8701 Singapore, 308900
Customer Service: Tel: +49-89-5527-39100 e-mail: [email protected] Phone: +65-6358-2160
Worldwide: +1-65-635-64480 e-mail: [email protected] e-mail: [email protected]
Americas: +1-408-414-9621
e-mail: [email protected] JAPAN
GERMANY (Gate Driver Sales) Yusen Shin-Yokohama 1-chome Bldg. TAIWAN
HellwegForum 1 1-7-9, Shin-Yokohama, Kohoku-ku 5F, No. 318, Nei Hu Rd.,
CHINA (SHANGHAI) 59469 Ense Yokohama-shi, Sec. 1
Rm 2410, Charity Plaza, No. 88, Germany Kanagawa 222-0033 Japan Nei Hu District
North Caoxi Road, Tel: +49-2938-64-39990 Phone: +81-45-471-1021 Taipei 11493, Taiwan R.O.C.
Shanghai, PRC 200030 e-mail: igbt-driver.sales@ e-mail: [email protected] Phone: +886-2-2659-4570
power.com e-mail: [email protected]
Phone: +86-21-6354-6323
e-mail: [email protected]
KOREA
INDIA RM 602, 6FL UK
#1, 14th Main Road Korea City Air Terminal B/D, Building 5, Suite 21
CHINA (SHENZHEN)
Vasanthanagar 159-6 The Westbrook Centre
17/F, Hivac Building, No. 2, Keji
Bangalore-560052 Samsung-Dong, Kangnam-Gu, Milton Road
Nan 8th Road, Nanshan District, Seoul, 135-728 Korea
India Cambridge
Shenzhen, China, 518057 Phone: +82-2-2016-6610
Phone: +91-80-4113-8020 CB4 1YG
Phone: +86-755-8672-8689 e-mail: [email protected] e-mail: [email protected] Phone: +44 (0) 7823-557484
e-mail: [email protected] e-mail: [email protected]

Power Integrations, Inc.


Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.power.com Page 47 of 47

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