0% found this document useful (0 votes)
60 views

Lecture 6a One Port Networks

1) This document outlines key concepts in network analysis for one-port microwave circuits, including equivalent voltages and currents, impedance, Foster's reactance theorem, and properties of input impedance Z(ω) and reflection coefficient Γ(ω). 2) It explains why network analysis is useful, especially at high frequencies, and defines intrinsic, wave, and characteristic impedances. 3) Foster's reactance theorem states that the reactance of a passive, lossless network always increases monotonically with frequency.

Uploaded by

Fikre Awano
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
60 views

Lecture 6a One Port Networks

1) This document outlines key concepts in network analysis for one-port microwave circuits, including equivalent voltages and currents, impedance, Foster's reactance theorem, and properties of input impedance Z(ω) and reflection coefficient Γ(ω). 2) It explains why network analysis is useful, especially at high frequencies, and defines intrinsic, wave, and characteristic impedances. 3) Foster's reactance theorem states that the reactance of a passive, lossless network always increases monotonically with frequency.

Uploaded by

Fikre Awano
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 24

Electromagnetics:

Microwave Engineering

One-port Networks
Lecture Outline

• Why use Network Analysis?


• Equivalent Voltages and Currents
• The Concept of Impedance
• One Port Networks
• Foster’s Reactance Theorem
• Properties of 𝑍(𝜔) and Γ(𝜔)

2
Why use Network
Analysis?

Slide 3
Low-Frequency vs. High-Frequency

Frequency

+
-

DC/Low-Frequency High-Frequency/Microwaves
4
Equivalent Voltages
and Currents

Slide 5
E and V of an arbitrary TEM two-conductor line
+
𝑉 = න 𝐸 ⦁𝑑 𝑙Ԧ

𝐼 = ර 𝐻⦁𝑑𝑙Ԧ
𝐶+

𝑉
𝐸 𝑍0 =
𝐼
𝐻

6
E and V of a rectangular waveguide
𝑗𝜔𝜇𝑎 𝜋𝑥 −𝑗𝛽𝑧
𝐸𝑦 𝑥, 𝑦, 𝑧 = 𝐴sin 𝑒 = 𝐴𝑒𝑦 (𝑥, 𝑦)𝑒 −𝑗𝛽𝑧
𝜋 𝑎
𝑗𝛽𝑎 𝜋𝑥 −𝑗𝛽𝑧
𝐻𝑥 𝑥, 𝑦, 𝑧 = 𝐴sin 𝑒 = 𝐴ℎ𝑥 (𝑥, 𝑦)𝑒 −𝑗𝛽𝑧
𝜋 𝑎

+
𝑉 = න 𝐸 ∙ 𝑑 𝑙Ԧ

𝑦
−𝑗𝜔𝜇𝑎 𝜋𝑥 −𝑗𝛽𝑧
𝑏 𝑉= 𝐴sin 𝑒 න 𝑑𝑦
𝜋 𝑎 𝑦

0 𝑎 𝑥
7
The concept of
Impedance

Slide 8
The different types of impedance
𝜇
𝜂= Intrinsic Impedance of the medium
𝜖
𝐸𝑡 1
𝑍𝑤 = = Wave Impedance
𝐻𝑡 𝑌𝑤

1 𝑉+
𝑍0 = = + Characteristic Impedance
𝑌0 𝐼

9
One-Port Networks

Slide 10
Impedance Properties of One-Port Networks
Recall Poynting’s Theorem

𝑠 1
𝐼→
𝑃𝑠 = ඾(𝐸 × 𝐻)⦁𝑑𝑠Ԧ + 𝑃𝜎 + 2𝑗𝜔 𝑊𝑚 − 𝑊𝑒
+ 2
𝑆
𝑍𝑖𝑛 → 𝑉 𝐸, 𝐻
− 𝑃𝑠 ≡ Power supplied through port
𝑛ො
1
‫װ‬ (𝐸 × 𝐻) ∙ 𝑑𝑠Ԧ ≡ Power transmitted through surface
2 𝑆

𝑃𝜎 ≡ Power dissipated by ohmic losses


2𝑗𝜔 𝑊𝑚 − 𝑊𝑒 ≡ Total stored energy (magnetic and electric)

11
Impedance Properties of One-Port Networks
The complex power dissipated (or stored) by a complex load is

𝑃 𝜔 = 𝑉 𝜔 𝐼∗ 𝜔 = 𝑍 𝜔 𝐼 𝜔 𝐼∗ 𝜔 = 𝑍 𝐼 𝜔 2
𝑠
𝐼→
We can separate the impedance into resistance,
+
inductance and capacitance as follows:
𝑍𝑖𝑛 → 𝑉 𝐸, 𝐻
− 1
𝑍 𝜔 = 𝑅 + 𝑗𝜔𝐿 − 𝑗
𝑛ො 𝜔𝐶
The power stored in a purely inductive load and purely
capacitive load is:
2
1 2
𝑃𝐿 𝜔 = 𝑗𝜔L ∙ 𝐼 𝜔 𝑃𝐶 𝜔 = −𝑗 ∙ 𝐼 𝜔
𝜔𝐶

W = 𝑊𝑚 − 𝑊𝑒
12
Wave to Circuit Picture
The field in the terminal can be written as
𝐸 𝑥, 𝑦, 𝑧 = 𝑉 𝑧 𝐴Ԧ 𝑥, 𝑦 𝑒 −𝑗𝛽𝑧
𝑆
𝐼→ 𝐻 𝑥, 𝑦, 𝑧 = 𝐼 𝑧 𝐵 𝑥, 𝑦 𝑒 −𝑗𝛽𝑧
+ The amplitude functions 𝐴 and 𝐵 are normalized such
𝑍𝑖𝑛 → 𝑉 𝐸, 𝐻 that at the interface

𝑛ො ඵ 𝐴Ԧ × 𝐵 ⦁𝑑 𝑠Ԧ = 1
𝑆
In terms of waves, we can substitute for E and H into the
integration
1
𝑃 𝑧 = ඵ 𝐸 × 𝐻 ⦁𝑑 𝑠Ԧ
2
𝑆

13
Wave to Circuit Picture
𝑃 𝑧 = ඵ 𝐸 × 𝐻 ⦁𝑑 𝑠Ԧ
𝑆
𝑆
𝐼→ 1
𝑃 𝑧 = ඵ 𝑉 𝑧 𝐴Ԧ 𝑥, 𝑦 𝑒 −𝑗𝛽𝑧 × 𝐼 ∗ 𝑧 𝐵 𝑥, 𝑦 𝑒 −𝑗𝛽𝑧 ⦁𝑑 𝑠Ԧ
+ 2
𝑆
𝑍𝑖𝑛 → 𝑉 𝐸, 𝐻
− 1
𝑛ො = 𝑉 𝑧 𝐼 ∗ 𝑧 ඵ 𝐴Ԧ 𝑥, 𝑦 × 𝐵 𝑥, 𝑦 ⦁𝑑 𝑠Ԧ
2
𝑆
1
= 𝑉 𝑧 𝐼∗ 𝑧
2

14
Input Impedance
𝑍 = 𝑅 + 𝑗𝑋 (impedance) = (resistance) + 𝑗(reactance)

𝑆 𝑌 = 𝐺 + 𝑗𝐵 (admittance) = (conductance) + 𝑗(susceptance)


𝐼→
+ The input impedance is defined as
𝑍𝑖𝑛 → 𝑉 𝐸, 𝐻 𝑉 𝑉 ∙ 𝐼 ∗ 𝑉𝐼 ∗ 2𝑃 2𝑃𝜎 + 4𝑗𝜔 𝑊𝑚 − 𝑊𝑒
− 𝑍𝑖𝑛 = = ∗
= 2= 2=
𝐼 𝐼∙𝐼 𝐼 𝐼 𝐼2
𝑛ො
2𝑃𝜎 4𝜔 𝑊𝑚 − 𝑊𝑒
𝑍𝑖𝑛 = 𝑅 + 𝑗𝑋 = 2 + 𝑗
𝐼 𝐼2

15
Input Impedance
2𝑃𝜎
𝑅= 2 Dissipated power
𝐼
𝑆
𝐼→ 4𝜔 𝑊𝑚 − 𝑊𝑒
𝑋= Energy stored
+ 𝐼2
𝑍𝑖𝑛 → 𝑉 𝐸, 𝐻

𝑛ො For capacitive loads → 𝑊𝑚 < 𝑊𝑒 → 𝑋 < 0

For inductive loads → 𝑊𝑚 > 𝑊𝑒 → 𝑋 > 0

16
Foster’s Reactance
Theorem

Slide 17
Foster’s Reactance Theorem
The reactance (and susceptance) of a passive and lossless one port network
always monotonically increases with frequency
𝑋, 𝐵

𝜕𝑋 𝜕𝐵
>0 and >0
𝜕𝜔 𝜕𝜔

0 𝜔 18
Proof of Theorem
Suppose we have a load with inductance (stored magnetic energy) and
capacitance (stored electric energy). The reactance is given by
1 𝑋, 𝐵
𝑗𝑋 𝜔 = 𝑗𝜔𝐿 +
𝑗𝜔𝐶
1
𝑋 𝜔 = 𝜔𝐿 −
𝜔𝐶
𝜕𝑋 𝜕 1 1
= 𝜔𝐿 − =𝐿+ 2 >0
𝜕𝜔 𝜕𝜔 𝜔𝐶 𝜔 𝐶

0 𝜔 19
Properties of 𝑍(𝜔)
and Γ(𝜔)

Slide 20
Even and odd properties of 𝑍(𝜔) and Γ(𝜔)
Consider driving a one-port network with input impedance 𝑍(𝜔) which
responds with a current 𝐼(𝜔)
𝑉 𝜔 = 𝑍 𝜔 𝐼(𝜔)
The Fourier Transform of a real-valued function must have Hermitian
symmetry. Since the time-domain voltage and current must be real, then
𝑉 and 𝐼 have Hermitian symmetry.
𝑣 𝑡 = 𝑣∗ 𝑡 ,
∞ ∞ ∞
න 𝑉 𝜔 𝑒 𝑗𝜔𝑡 𝑑𝜔 = න 𝑉 ∗ 𝜔 𝑒 −𝑗𝜔𝑡 𝑑𝜔 = න 𝑉 ∗ −𝜔 𝑒 𝑗𝜔𝑡 𝑑𝜔
−∞ −∞ −∞
21
Even and odd properties of 𝑍(𝜔) and Γ(𝜔)
Which means that 𝑉(𝜔) and 𝐼(𝜔) satisfy

𝑉 −𝜔 = 𝑉 ∗ (𝜔) 𝐼 −𝜔 = 𝐼∗ (𝜔)
Applying these to the impedance shows that impedance also must have
Hermitian symmetry.
𝑉(𝜔) ∗

𝑉 (𝜔) 𝑉 (−𝜔)
𝑍 𝜔 = 𝑍 𝜔 = ∗ = = 𝑍 −𝜔
𝐼(𝜔) 𝐼 (𝜔) 𝐼 (−𝜔)

22
Even and odd properties of 𝑍(𝜔) and Γ(𝜔)
Now for 𝑅 𝜔 and 𝑋 𝜔 we get

𝑍 ∗ 𝜔 = 𝑍(−𝜔)
𝑅 𝜔 − 𝑗𝑋 𝜔 = 𝑅 −𝜔 + 𝑗𝑋(−𝜔)

𝑅 𝜔 = 𝑅 −𝜔 even symmetry
−𝑋 𝜔 = 𝑋 −𝜔 odd symmetry

23
Even and odd properties of 𝑍(𝜔) and Γ(𝜔)
Applying these to the reflection coefficient shows that it also has Hermitian
symmetry.
𝑍 𝜔 − 𝑍0 𝑅 𝜔 + 𝑗𝑋 𝜔 − 𝑍0
Γ 𝜔 = =
𝑍 𝜔 + 𝑍0 𝑅 𝜔 + 𝑗𝑋 𝜔 + 𝑍0

𝑅 −𝜔 + 𝑗𝑋 −𝜔 − 𝑍0 𝑅 𝜔 − 𝑗𝑋 𝜔 − 𝑍0
Γ −𝜔 = = = Γ ∗ (𝜔)
𝑅 −𝜔 + 𝑗𝑋 −𝜔 + 𝑍0 𝑅 𝜔 − 𝑗𝑋 𝜔 + 𝑍0

Γ 𝜔 2 = Γ 𝜔 ∗ Γ 𝜔 = Γ 𝜔 Γ −𝜔 = Γ −𝜔 2

2
Which means that Γ 𝜔 and Γ(𝜔) are even functions.
24

You might also like