Lecture 6a One Port Networks
Lecture 6a One Port Networks
Microwave Engineering
One-port Networks
Lecture Outline
2
Why use Network
Analysis?
Slide 3
Low-Frequency vs. High-Frequency
Frequency
+
-
DC/Low-Frequency High-Frequency/Microwaves
4
Equivalent Voltages
and Currents
Slide 5
E and V of an arbitrary TEM two-conductor line
+
𝑉 = න 𝐸 ⦁𝑑 𝑙Ԧ
−
𝐼 = ර 𝐻⦁𝑑𝑙Ԧ
𝐶+
𝑉
𝐸 𝑍0 =
𝐼
𝐻
6
E and V of a rectangular waveguide
𝑗𝜔𝜇𝑎 𝜋𝑥 −𝑗𝛽𝑧
𝐸𝑦 𝑥, 𝑦, 𝑧 = 𝐴sin 𝑒 = 𝐴𝑒𝑦 (𝑥, 𝑦)𝑒 −𝑗𝛽𝑧
𝜋 𝑎
𝑗𝛽𝑎 𝜋𝑥 −𝑗𝛽𝑧
𝐻𝑥 𝑥, 𝑦, 𝑧 = 𝐴sin 𝑒 = 𝐴ℎ𝑥 (𝑥, 𝑦)𝑒 −𝑗𝛽𝑧
𝜋 𝑎
+
𝑉 = න 𝐸 ∙ 𝑑 𝑙Ԧ
−
𝑦
−𝑗𝜔𝜇𝑎 𝜋𝑥 −𝑗𝛽𝑧
𝑏 𝑉= 𝐴sin 𝑒 න 𝑑𝑦
𝜋 𝑎 𝑦
0 𝑎 𝑥
7
The concept of
Impedance
Slide 8
The different types of impedance
𝜇
𝜂= Intrinsic Impedance of the medium
𝜖
𝐸𝑡 1
𝑍𝑤 = = Wave Impedance
𝐻𝑡 𝑌𝑤
1 𝑉+
𝑍0 = = + Characteristic Impedance
𝑌0 𝐼
9
One-Port Networks
Slide 10
Impedance Properties of One-Port Networks
Recall Poynting’s Theorem
𝑠 1
𝐼→
𝑃𝑠 = (𝐸 × 𝐻)⦁𝑑𝑠Ԧ + 𝑃𝜎 + 2𝑗𝜔 𝑊𝑚 − 𝑊𝑒
+ 2
𝑆
𝑍𝑖𝑛 → 𝑉 𝐸, 𝐻
− 𝑃𝑠 ≡ Power supplied through port
𝑛ො
1
װ (𝐸 × 𝐻) ∙ 𝑑𝑠Ԧ ≡ Power transmitted through surface
2 𝑆
11
Impedance Properties of One-Port Networks
The complex power dissipated (or stored) by a complex load is
𝑃 𝜔 = 𝑉 𝜔 𝐼∗ 𝜔 = 𝑍 𝜔 𝐼 𝜔 𝐼∗ 𝜔 = 𝑍 𝐼 𝜔 2
𝑠
𝐼→
We can separate the impedance into resistance,
+
inductance and capacitance as follows:
𝑍𝑖𝑛 → 𝑉 𝐸, 𝐻
− 1
𝑍 𝜔 = 𝑅 + 𝑗𝜔𝐿 − 𝑗
𝑛ො 𝜔𝐶
The power stored in a purely inductive load and purely
capacitive load is:
2
1 2
𝑃𝐿 𝜔 = 𝑗𝜔L ∙ 𝐼 𝜔 𝑃𝐶 𝜔 = −𝑗 ∙ 𝐼 𝜔
𝜔𝐶
W = 𝑊𝑚 − 𝑊𝑒
12
Wave to Circuit Picture
The field in the terminal can be written as
𝐸 𝑥, 𝑦, 𝑧 = 𝑉 𝑧 𝐴Ԧ 𝑥, 𝑦 𝑒 −𝑗𝛽𝑧
𝑆
𝐼→ 𝐻 𝑥, 𝑦, 𝑧 = 𝐼 𝑧 𝐵 𝑥, 𝑦 𝑒 −𝑗𝛽𝑧
+ The amplitude functions 𝐴 and 𝐵 are normalized such
𝑍𝑖𝑛 → 𝑉 𝐸, 𝐻 that at the interface
−
𝑛ො ඵ 𝐴Ԧ × 𝐵 ⦁𝑑 𝑠Ԧ = 1
𝑆
In terms of waves, we can substitute for E and H into the
integration
1
𝑃 𝑧 = ඵ 𝐸 × 𝐻 ⦁𝑑 𝑠Ԧ
2
𝑆
13
Wave to Circuit Picture
𝑃 𝑧 = ඵ 𝐸 × 𝐻 ⦁𝑑 𝑠Ԧ
𝑆
𝑆
𝐼→ 1
𝑃 𝑧 = ඵ 𝑉 𝑧 𝐴Ԧ 𝑥, 𝑦 𝑒 −𝑗𝛽𝑧 × 𝐼 ∗ 𝑧 𝐵 𝑥, 𝑦 𝑒 −𝑗𝛽𝑧 ⦁𝑑 𝑠Ԧ
+ 2
𝑆
𝑍𝑖𝑛 → 𝑉 𝐸, 𝐻
− 1
𝑛ො = 𝑉 𝑧 𝐼 ∗ 𝑧 ඵ 𝐴Ԧ 𝑥, 𝑦 × 𝐵 𝑥, 𝑦 ⦁𝑑 𝑠Ԧ
2
𝑆
1
= 𝑉 𝑧 𝐼∗ 𝑧
2
14
Input Impedance
𝑍 = 𝑅 + 𝑗𝑋 (impedance) = (resistance) + 𝑗(reactance)
15
Input Impedance
2𝑃𝜎
𝑅= 2 Dissipated power
𝐼
𝑆
𝐼→ 4𝜔 𝑊𝑚 − 𝑊𝑒
𝑋= Energy stored
+ 𝐼2
𝑍𝑖𝑛 → 𝑉 𝐸, 𝐻
−
𝑛ො For capacitive loads → 𝑊𝑚 < 𝑊𝑒 → 𝑋 < 0
16
Foster’s Reactance
Theorem
Slide 17
Foster’s Reactance Theorem
The reactance (and susceptance) of a passive and lossless one port network
always monotonically increases with frequency
𝑋, 𝐵
𝜕𝑋 𝜕𝐵
>0 and >0
𝜕𝜔 𝜕𝜔
0 𝜔 18
Proof of Theorem
Suppose we have a load with inductance (stored magnetic energy) and
capacitance (stored electric energy). The reactance is given by
1 𝑋, 𝐵
𝑗𝑋 𝜔 = 𝑗𝜔𝐿 +
𝑗𝜔𝐶
1
𝑋 𝜔 = 𝜔𝐿 −
𝜔𝐶
𝜕𝑋 𝜕 1 1
= 𝜔𝐿 − =𝐿+ 2 >0
𝜕𝜔 𝜕𝜔 𝜔𝐶 𝜔 𝐶
0 𝜔 19
Properties of 𝑍(𝜔)
and Γ(𝜔)
Slide 20
Even and odd properties of 𝑍(𝜔) and Γ(𝜔)
Consider driving a one-port network with input impedance 𝑍(𝜔) which
responds with a current 𝐼(𝜔)
𝑉 𝜔 = 𝑍 𝜔 𝐼(𝜔)
The Fourier Transform of a real-valued function must have Hermitian
symmetry. Since the time-domain voltage and current must be real, then
𝑉 and 𝐼 have Hermitian symmetry.
𝑣 𝑡 = 𝑣∗ 𝑡 ,
∞ ∞ ∞
න 𝑉 𝜔 𝑒 𝑗𝜔𝑡 𝑑𝜔 = න 𝑉 ∗ 𝜔 𝑒 −𝑗𝜔𝑡 𝑑𝜔 = න 𝑉 ∗ −𝜔 𝑒 𝑗𝜔𝑡 𝑑𝜔
−∞ −∞ −∞
21
Even and odd properties of 𝑍(𝜔) and Γ(𝜔)
Which means that 𝑉(𝜔) and 𝐼(𝜔) satisfy
𝑉 −𝜔 = 𝑉 ∗ (𝜔) 𝐼 −𝜔 = 𝐼∗ (𝜔)
Applying these to the impedance shows that impedance also must have
Hermitian symmetry.
𝑉(𝜔) ∗
∗
𝑉 (𝜔) 𝑉 (−𝜔)
𝑍 𝜔 = 𝑍 𝜔 = ∗ = = 𝑍 −𝜔
𝐼(𝜔) 𝐼 (𝜔) 𝐼 (−𝜔)
22
Even and odd properties of 𝑍(𝜔) and Γ(𝜔)
Now for 𝑅 𝜔 and 𝑋 𝜔 we get
𝑍 ∗ 𝜔 = 𝑍(−𝜔)
𝑅 𝜔 − 𝑗𝑋 𝜔 = 𝑅 −𝜔 + 𝑗𝑋(−𝜔)
𝑅 𝜔 = 𝑅 −𝜔 even symmetry
−𝑋 𝜔 = 𝑋 −𝜔 odd symmetry
23
Even and odd properties of 𝑍(𝜔) and Γ(𝜔)
Applying these to the reflection coefficient shows that it also has Hermitian
symmetry.
𝑍 𝜔 − 𝑍0 𝑅 𝜔 + 𝑗𝑋 𝜔 − 𝑍0
Γ 𝜔 = =
𝑍 𝜔 + 𝑍0 𝑅 𝜔 + 𝑗𝑋 𝜔 + 𝑍0
𝑅 −𝜔 + 𝑗𝑋 −𝜔 − 𝑍0 𝑅 𝜔 − 𝑗𝑋 𝜔 − 𝑍0
Γ −𝜔 = = = Γ ∗ (𝜔)
𝑅 −𝜔 + 𝑗𝑋 −𝜔 + 𝑍0 𝑅 𝜔 − 𝑗𝑋 𝜔 + 𝑍0
Γ 𝜔 2 = Γ 𝜔 ∗ Γ 𝜔 = Γ 𝜔 Γ −𝜔 = Γ −𝜔 2
2
Which means that Γ 𝜔 and Γ(𝜔) are even functions.
24