Optical Receivers 193 ise are the important parameters in the des and noise are U Parameters in the design of receiver. Fi 5 th ae frontend total capacitance is Bh of receiver. From the equivalent circuit gwidt ene i CraCy+C, ifthe Joad resistance is R,, then the post-detection bandwidth 2 is given as ad : B2——_ 2MRy Cy fiom the above equation, a : clear that to increase the post-detection bandwidth 3,2 should be seduced Freer, increase in Band decrease in R, increases the thermal h is undesirable. It severely 6S a - pena fi: Hose pe sensitivity of receiver Thus, the circuits impracial forlong ” us, the istance communication, jgh impedance front end: In this circuit, the effect of thermal noise is reduced by increasing the detec- 2 frequency response is tor bias resistor and input impedance of amplifier. However, the frequency response is degraded” The idaecor output is integrated over Tong time constant and then restored by differentiation with the help ofequalizer as shown in Fig. 5.22(b). Thus, this structure gives much betier sensitiviey as compared co Iewimpedance front-end configuration, but needs equalization and has limited dynamic range, 3, Transimpedance front end: In transimpedance front-end configuration (Fig, 5.23), a low noise, hi ” aputimpedance amplifier with negative feedback is used to overcome the drawbacks of the| end | jnee front-end configuration. It operates in a current mode amplifier, and the high input impedance is ve feedback. This configuration provides much greater bandwidth as well as reduced AL AW Figure 5.23 | Transimpedance front-end. Solved Problems Lt Th Ina photodetection device having absorption layer of thickness 10 jim th refractive index = 3.5 and sorption coefficient a= 10° m, calculare quantum’ efficiency if reflectivity is 0.31. a — Solution: The quantum efficiency is given by n=(-R)(l-e™) = n=(1-0.3 11-1) =0.43194 Fiber-Optic Communication 2 1a 4 Determine the cutoff wavelength for GaAs photodetector having bandgap energy of 1.43 eV, ——n, . Solution: We have 876 ‘The GaAs photodetector will cease to operate above 876 nm, o aa iency of 65% for photons of energy 1:52 x 10°” J. Calealte A) pn phorodiode has a quantum efi avelength at which the diode is operating ‘and-{bythe optical power requjted to achieve-a photocures ‘7 3 HA, when the wavelength of incident phon is chat calculated in part — Solution: The energy of each photon is Re be E=hf=— i Therefore, re 6.62610" x3x10° A=—= =1,300 E 152x10 be Now 0.65x1.6x107? Me 000 Or 20.684 AW 1.52x10 ‘Also we know that Toro R= in AW So | oa AW = 4.38 wW caey AW = 43800 ps0 al po aaa sg a wavelengtt of [APIN photodiode generates one electron-hole pair per three incident photons at 5 Caleulat the quantum efcency of diode and mean output photocurrent when the incident opt is 15 pW. Solution: We haveOptical Receivers 195 Now 1, R= bho a py A Gumy= 24 B,(eV) 1.24 = E(V)= 1.4588 @ : A(um) 0.85 ——— i , (F. 2LAI0 = F,=2.33x10"? J ev = DAE ‘Therefore ne _0.33x1.6%107 Tpjorn = RX Poy == EOE x15 10° 23: pane Pa iF 3 33107 15x10 =3.399 HA oT Photons of 1,300 ‘am wavelength are incident on a pn photodiode at a rate of 5x10'° 5“! and the electrons ‘ency and responsivity of the diode. espqnsy — are collected at a rate of 2X10"° s“. Calculate the quantum cffici Solution: We have 2x10 5x10 Now Ly Te odiode having depletion layer width of 30 pm ~ ¢ time for silicon PIN phot aming no carters are generated outside the depletion region and Calculate the maximum and cartier velocity of 3 X 10° depletion capacitance is negligible. Solutions The maximum 3-dB bandwidth is given by 4 x 3X10. 59x10° He 20x30x10° mis,196 Fiber-Optic Communication 5 ‘Therefore, =6.2 ns 1 Maximum response time= —— = . 1.5910" a Red ‘The quantum efficiency of APD is 35% at 1,300 nm. Calculate the multiplication factor output photocurrent of 6 WA for incident optical power of 0.35 LW. Solution: The avalanche multiplication factor M of an APD is defined as iti Prados, ____ Multiplied output photocurrent ous Initial or primary unmultiplied photocurrent Ijig.5 We have ned =RxP, inp f, ‘Photo ‘Therefore, re Substituting the values, we get ____6x10™ x6.626 x10 x3x10° 0.35x10°° x0.35x1.6x10"” x1,300X10 PROBLEM 8 Determine the multiplication factor for silicon RAPD, if its quantum efficiency power is 0.5 W, and output current is 10 1A at 900 nm, is 70%, incident 078 Sole 2 We have ] pated (Pe ; _0.7x1.6x10- x900x10° 6.62610" x3x10° =0.507 AW . Now BER < Lphoro = RX Pig = 0.507 X0.5X10~° =0,2535 HA aOptical ecetvers 197 opt 10x 10°% 39.44 M= mala RES phow 02535108 ‘the multiplication factor of the photodiode is approximately 40, Find the multiplication factor for silicon APD having quantum eflicl ey of 79% a 890 am, and.0.75 ww? T y optical power produces a multiplied photocurrent of 15 tA, ane Solution: We have Sr ““S R Pe, ned 0.72x1.6x10"" x890x107? 6.626x10™™ x3x108 =0.5157 AW ‘Therefore Jphoxo = RX Py, = 0.5157 X0.75 106 =0.3867 HA So : i 15x10" “Tow 03867107 The primary photocurrent is multiplied by factor of 39. eae) Ifa diode has j= 2 nA, a shunt resistance Rj, of 5 X 10° Q, and responsivity R= ‘Hz, calculate NEP. .5 AIW, then for B= 1 Solution: Shot noise current J, is given by Ig =(2eiB)” =(2x1.6x107 x2x107 x1)! 4 =2,5x10 A Y Johnson noise current J is , ‘ee _[4erey” 1m 1 a3 a [sneer | 5x10° \198 _Fiber-Optic Communication. =5.6x10" A Total noise current is Iys(R 4)? 1522 =[(2.5x1074)? +(65.610 =2.56x10" A Hence 2.56x107"4 =5.12x10 W PROBLEM 11 Determine the quantum efficiency and responsivity of InGaAs photodetector if a 80 ns pulse, having 62 10° photons at a wavelength of 1,300 nm, falls on it and average EHPs generated are 5.5 x 10°. Solution: The quantum efficiency is ___ Number of excited EHDs per second Total number of incident pairs per second = EHP ohoton Hence Responsivity Ris » 30.93 AW on a aaa ed| Optical Receivers 199 Solution: Responsivity R is “Therefore efficiency is 1.24R 2 (um) a) aa Ry Calculate the photocurrent generated in the output of a photodiode when photons of energy 1.4 10°”? are incident, the Optical poweF level is 12 1W, and its responsivity is 0.7 A/W. Solution: We have Tso =R Pin =0.7X12*10 =8.4 PA PROBLEM 14 an 22 If the responsivity of a PIN diode is 0.6 and its dark current is 1.5 nA, calculate the minimum power detectable by it. Solutions We can recognize the presence of optical power that produces a sigaal current equal to dark cur- rent. Therefore, we have I, Foro 10. ayy Py Fa Therefore, 9 7 cio NSO A a5 nw me 0.6 “Thus, the minimum detectable optical power is 2.5 nW. Tee 2 is 72%, loa ic i 300 has dark current of 4 nA, efficiency Is 72%, = mre i joree or ee, a mM, ea receiver bandwidth is 20 MHz. Calculate the ree aes resistance is 1 kQ, incident optical power is 400 n signal-to-noise ratio. : Ye200_Fiber-Optic Communication Solution: Responsivity R is i 14 (um) errr 20-7213 (HM) 4 jy But Therefore Tproro = RX Pq = 0.72% 40010? =288 nA oe Now = Dpto =288 nA Shot noise current Is =(2cip BY!” (2x1.6x10 x4x10 x20x108)"? =0.16x10° A Johnson noise current is 4x1.33x10™ x300%20%105 J? 1x10? =18.19x10° A Total noise current 25 =[(0.16x10? +(18.19 x10)? "2 =18.19x10° A IyU2477)! Hence signal-to-noise ratio is 288 nA et = 815.8 Te.19 na 8 SNR (in dB) = 20 log (15.83) = 23.99 dBOptical Receivers 201 ise £ a 800 nm has a quantum effci 5%. 8 a quia ciency of 1596. Load resistance is 100 0 “7 WNW. Calculate the voltage across land. aes io wy PROBLEM 16 ‘The photodetector operatin, optical power absorbed by Solution: Responsivity Ris pata um) 1.24 =P WO ay . =0.0967 es Now : 7178 Therefore, J phoro =R X Pig, =0.0967 X1.7 X10" =164.39 nA. ‘The voltage across the load is Yah, photo =164.39x10™ x100 =16.43 V xR, Tea ey ADIN photodiode is having a depletion layer width of 30 jum and a carrier velocity of 3 X 10° mus. Calculate the maximum 3-dB bandwidth for it. egress ‘The transit time or drift time for charge carriers generated at the edge of intrinsic Si-layee is 30%10°6 tua eto x107s . % 3x10" R at We have meee Therefore, maximum 3-dB bandwidth is faa = 05 5.54108 He 10x10 *| | 202 _Fiber-Optic Communication son Fran =350MHz ee eae ‘Asilicon PIN photodiode has depletion region width = 12 Um, cross-sectional area 0.4 mm”, load resin, 13 F/m, and saturation velocity of 10” m/s. Calculate, Fansi time, ee of 10 MQ, €, = 10 x 107 Time ConstaM of photodiode. Gv ef junction capacitance, and Solutions The transit time or drift time for charge carriers generated tt the edge of intrinsic Silayerg 12x10 —- =12x107!'s=0.12ns 0 w Taste = Pay “The junction or depletion layer capacitance of PIN diode is given by A_10x107? x0.4x10% ee ee eee aes w 12x10 Cacpleion ‘This implies Ceptesion = 3-3 PF ‘Time constant is t= Ry Cacplerion =10x106 x3.3x1071 =33x109 Hence +=33 bis PROBLEM 19 fy cunt ‘The commercial Ge pn junction photodiode has a photosensitive area of 0.006 mm” (its responsi is shown in Fig. 5.24). The dark current is 0.35 LA, junction capacitance is 4 pF, rise time is 0.54 ns whet the Feverse bias voltage is 12 V. Calculate its quantum efficiency at 1,300 nm and 1,550 nm. Ao fi intensity of light at 1,550 nm that gives a photocurrent equal to the dark current. Solution: We know that nea Rak he ‘The responsivity curve is given in Fig. 5.24, and we have at A= 1,550 nm, R= 0.7. So 0.7x6.626x10-4 x3x10° 1.6x10" x1,550x107 1 =0.561Optical Receivers 203 08 Responsivity (AW) 05 i 1 Wavelength (m) Figure 5.24 | Responsivity curve of Ge pn junction photodiode, This implies 7 = 56.10%. Again from Fig 5.24, we have at 2 1,300 nm, R= 0.6. $0 . 0.55x6.626x10™ x3x10° ee eee =0.52 16x10" xi,300x10 "09256 ‘This means 7] = 52.56%. Now Dark current is 0.3 WA, at 1,550 nm, Zyjgq)ép- Therefore, incident optical power is Tpnoto _ 0.35X10°° R 07 =0.5x10 W x10 W Photosensitive area 0.006x10™ = 83.33 Wim? An SiAPD hasa quantum efficiency of 75% at 850 nm without multiplication. The APD is biased to operate With a multiplication factor of 100. If the incident optical power is 12 nW, calculate the photocurrent. Solution: We have eh 0.751.610"? x850%107 0.5131 A he 6.626x10°* x3x10°Totes = RX Py Multiplied output photocurrent it ~ Initialor primary unmultiplied photocurrent Tam Multiplied photocurrent is Tousput = MX Ihogo =100%6.1 A= 610A, | Summary photodetector converts electromagnetic radia- tion into an electronic signal, which is propor- jonal to the incident light intensity. Be iscodiodes are fabricated from semiconductor materials. The most commonly used materials are silicon (Si), arsenide (GaAs), indium spina) ine Gnsb), le asad 3. A photodetector is a revers Ree pn junction. When a photon of light is absorbed, it excites _an electron and produces a single pair of charge "carriers, an electron and a hole. These two charge carriers are swept in opposite directions by the ; ally applied bias voltage, and the photo- flows in the external circuit. ify the photon absorption ability, a pa- ed the quantum efficiency (7) is used. he number of excited EHPs to photocurrent without multiplication is given by =0.513112x10" = 6.1 nA. ‘The avalanche multiplication factor M of an APD is defined as . There are three types of photodiodes, 2 ‘The wavelength at which the detectoes depends on their composition. Silicon is 400-1100 nm, InGaAs is used at 1000 and Germanium is used at 800-1800; ly (a) pn photodiode, (b) PIN (©) Avalanche photodiode (APD). PIN photodiodes produce output & out gain, while APD produces with gain. Thus, the APD isa solid alternative for a photomultiplier . PIN photodiodes have high: sensitivity. ‘The minimum incident required to generate a total photodiode noise noise equivalent power,