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VLSI Question Paper

This document is an examination for an Electronics and Communication Engineering course on Introduction to VLSI Design. It contains 11 questions across 5 units on topics relating to VLSI design including: - The differences between full-custom and semi-custom design approaches. - Implementing basic logic gates using CMOS logic. - Comparing SRAM and DRAM memory types. - Analyzing the operation of dynamic and static CMOS inverters. - Explaining pass-transistor logic design and comparing different digital IC technologies. The questions range from drawing circuit schematics and explaining operations, to deriving expressions and comparing different components like MOSFETs and BJTs.

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209X1A04D2 SHAIK ASMA
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83 views

VLSI Question Paper

This document is an examination for an Electronics and Communication Engineering course on Introduction to VLSI Design. It contains 11 questions across 5 units on topics relating to VLSI design including: - The differences between full-custom and semi-custom design approaches. - Implementing basic logic gates using CMOS logic. - Comparing SRAM and DRAM memory types. - Analyzing the operation of dynamic and static CMOS inverters. - Explaining pass-transistor logic design and comparing different digital IC technologies. The questions range from drawing circuit schematics and explaining operations, to deriving expressions and comparing different components like MOSFETs and BJTs.

Uploaded by

209X1A04D2 SHAIK ASMA
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Res.No.

,L-]If"m

L76 S 43
FOIJR YEAR B.TECH. DEGREE EXAMINATION _ NOVEMBER, 2019.

F IFTH SEMESTER EXAMINATION

!]ELF]C]'RONICS AND COMMUNICATION ENGINEERING


INTRODUCTTON TO VI,SI I)ESIGN (TVI,SID)
(scHEME * 2077)

?-irue : {t l{ours MG,x. Morks : 60


Note : (i) Answer Question I.{o. I and. any ONE question from each
IJ nit.
(ii) Ali qucstions carry equal marks.

1. Answer the follor,ving questions. (5 x 2 * 10)


(a) What is rneant by full-custom and semi-cusiom design?
(b) What is the effect oflthreshold voltage on channel length and body effect?
(c) Implement a two input NAND gate using CMOS logic.
(1) lVrite the advantages of pseudo NMOS over CMOS.
(e) Write the d.ifferences between SRAM and DRAM.

UNIT I

2. (a) Explain the different types of ASIC'S.


(b) What is lithography? Itrxplain in cletail"

Or

3, (a) Draw the CMOS schematic and layout d.iagram of Z-input NAND gate
and explain the operation.
(b) List all 2'based design rulcs with the help of sketches.

I]IVIT II

4, (a) Discuss the electrical properties of MOS transistors.


(b) f)crive the expression for n-MOSFET cument - voltage equations.
Or

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5. (a) Draw the structure of MOS transistor in enhanccment mode for the value
of Vgs> V, and Vo" uVr, -V,
(b) Compa-re MOSF-ET and BJT in all respect.

G. (a) Explain the operation of dynamic CMOS inverter with neat diagram.
(b) Derive the expression for dynamic power dissipation of CMOS circuit.

Or

7. (a) Explain static power dissipation of CMOS circuit.


(b) Implement NOR gate using CMOS iogic and explain its operation with
truth table.

UNII'IV

8. (a) Analyzc the opcration of pass-transistor logic with an example circuit.


(b) Compare various design methodologies.

9. (a) Draw and explain the operation of a BICMOS inverter and give its truth
table with refercnce to the transistor.
(b) classify various disitai IC technologies. Explain each one briefly.
.,
UNIT V

10. (a) Distinguish SRAM and DRAM ancl explain the operation of SRAM celi.
(b) Describe the timing issues in latch and flip.flops'

'Or
11. (a) State differences between ROM and RAM and explain the operation of
IT.DRAM;
' (b) I)raw and. explain the architecturc of RAM cell.

176 s 43
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