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Nte 312

The NTE312 is a field effect transistor designed for use in VHF amplifiers and mixers. It has features that make it suitable for applications in FM, TV, and mobile communications equipment such as high power gain of 10dB minimum at 400MHz and transconductance of 4000 mmho minimum at 400MHz. It comes in a TO-92 package and has specified maximum ratings and electrical characteristics.

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Fernando Anders
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78 views

Nte 312

The NTE312 is a field effect transistor designed for use in VHF amplifiers and mixers. It has features that make it suitable for applications in FM, TV, and mobile communications equipment such as high power gain of 10dB minimum at 400MHz and transconductance of 4000 mmho minimum at 400MHz. It comes in a TO-92 package and has specified maximum ratings and electrical characteristics.

Uploaded by

Fernando Anders
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NTE312

N−Channel Silicon Junction


Field Effect Transistor
TO92 Type Package

Description:
The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The
NTE312 comes in a TO−92 package.

Features:
D High Power Gain: 10dB Min at 400MHz
D
D High Transconductance: 4000 mmho Min at 400MHz G
D Low Crss: 1pF Max S
D High (Yfs) / Ciss Ratio (High−Frequency Figure−of−Merit)
D Drain and Gate Leads Separated for High Maximum Stable Gain
D Cross−Modulation Minimized by Square−Law Transfer Characteristic
D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment

Absolute Maximum Ratings: (TA = +25WC unless otherwise specified)


Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25WC ), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above +25WC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.88mW/WC
Total Device Dissipation (TC = +25WC), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate Above +25WC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/WC
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65Wto +150WC
Lead Temperature, During Soldering (1/16 Inch from Case for 10sec), TL . . . . . . . . . . . . . . . +260WC
Rev. 10−13
Electrical Characteristics: (TA = +25WC unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate−Source Breakdown Voltage V(BR)GSS IG = −1.0mA, VDS = 0 −30 − − V
Gate Reverse Current IGSS VGS = −20V, VDS = 0 − − −1.0 nA
Gate 1 Leakage Current IG1SS VG1S = −20V, VDS = 0, TA = +100WC − − −0.5 mA
Gate−Source Cutoff Voltage VGS(off) VDS = 15V, ID = 10mA −1.0 − −6.0 V
ON Characteristics
Zero−Gate Voltage Drain Current IDSS VDS = 15V, VGS = 0, Note 1 5.0 − 15 mA
Small−Signal Characteristics
Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz 4500 − 7500 mmhos
Input Admittance Re(yis) 100MHz VDS = 15V, VGS = 0 − − 100 mmhos
400MHz − − 1000 mmhos
Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz − − 50 mmhos
Output Conductance Re(yos) 100MHz VDS = 15V, VGS = 0 − − 75 mmhos
400MHz − − 100 mmhos
Forward Transconductance Re(yfs) VDS = 15V, VGS = 0, f = 400MHz 4000 − − mmhos
Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1.0MHz − − 4.5 pF
Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1.0MHz − − 1.0 pF
Input Susceptance IM(Yis) 100MHz VDS = 15V, VGS = 0 − − 3.0 mmho
400MHz − − 12.0 mmho
Functional Characteristics
Noise Figure NF 100MHz VDS = 15V, ID = 5mA, − − 2.0 dB
RiG = 1kW
400MHz − − 4.0 dB
Common Source Power Gain Gps 100MHz VDS = 15V, ID = 5mA, 18 − − dB
RiG = 1kW
400MHz 10 − − dB
Output Susceptance IM(Yos) 100MHz VDS = 15V, VGS = 0 − − 1000 mmhos
400MHz − − 4000 mmhos

Note 1. tp = 100ms, Duty Cycle = 10%.


.135 (3.45) Min

.210
(5.33)
Max
Seating Plane

.500 .021 (.445) Dia Max


(12.7)
Min

G S D

.100 (2.54)

.050 (1.27)

.165
(4.2)
Max

.105 (2.67) Max


.105 (2.67) Max
.205 (5.2) Max

NOTE: Drain and Source are interchangeable.

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