AOD486A

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOD486A uses advanced trench technology and VDS (V) = 40V
design to provide excellent RDS(ON) with low gate ID = 50 A (VGS = 10V)
charge. It is ESD protected. This device is suitable for RDS(ON) < 9.8 mΩ (VGS = 10V)
use in PWM, load switching and general purpose RDS(ON) < 13 mΩ (VGS = 4.5V)
applications. Standard Product AOD486A is Pb-free ESD PROTECTED
(meets ROHS & Sony 259 specifications). UIS Tested
Rg,Ciss,Coss,Crss Tested

TO-252
D-PAK
D

Top View
G
Drain Connected to
Tab

G D S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 50
Current G TC=100°C ID 36 A
C
Pulsed Drain Current IDM 100
C
Avalanche Current IAR 30 A
C
Repetitive avalanche energy L=0.3mH EAR 135 mJ
TC=25°C 50
PD W
Power Dissipation B TC=100°C 25
TA=25°C 4.1
A PDSM W
Power Dissipation TA=70°C 2.7
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 17.4 30 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 45 60 °C/W
B
Maximum Junction-to-Case Steady-State RθJC 1.2 3 °C/W

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AOD486A

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 V
VDS=40V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 µA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1 2 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 100 A
VGS=10V, ID=20A 8.1 9.8
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 12.15 16
VGS=4.5V, ID=5A 10.8 13 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 47 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.76 1 V
IS Maximum Body-Diode Continuous Current 50 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1600 1920 pF
Coss Output Capacitance VGS=0V, VDS=20V, f=1MHz 320 pF
Crss Reverse Transfer Capacitance 100 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 22 nC
Qg(4.5V) Total Gate Charge 10.5 nC
VGS=10V, VDS=20V, ID=20A
Qgs Gate Source Charge 4.2 nC
Qgd Gate Drain Charge 4.8 nC
tD(on) Turn-On DelayTime 6.5 ns
tr Turn-On Rise Time VGS=10V, VDS=20V, RL=1Ω, 12.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 33 ns
tf Turn-Off Fall Time 16 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 31 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 33 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The package is limited to a maximum of 25A continuous current.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 0: May. 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD486A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
10V -40°C
VDS=5V
5V 25°C
80 80
4V 125°C
60 60
ID (A)

ID(A)
40 VGS=3.5V 40

20 20 -40°C
VGS=3V 125°C
25°C
0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5 5 5.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
500
14 1.6
150
60
VGS=4.5V
VGS=10V
Normalized On-Resistance

12 1.4 ID=20A
RDS(ON) (mΩ)

1.2
10 VGS=4.5V
ID=5A
1
8 VGS=10V

0.8
6
0 5 10 15 20 25 30
0.6
ID (A) -50 -25 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate
Temperature (°C)
Voltage
Figure 4: On-Resistance vs. Junction Temperature

40 1.0E+01
ID=20A
35 1.0E+00 125°C

30
1.0E-01
RDS(ON) (mΩ)

IS (A)

25
1.0E-02

20 125°C
1.0E-03
-40°C
15
1.0E-04
25°C 25°C
10
1.0E-05
5 0.0 0.2 0.4 0.6 0.8 1.0 1.2
2 4 6 8 10
VSD (Volts)
VGS (Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

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AOD486A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

2400
10

VDS=20V 2000
Ciss
8 ID=20A

Capacitance (pF)
1600
VGS (Volts)

6
1200
4
800 Coss
Crss
2
400

0
0
0 4 8 12 16 20 24
0 5 10 15 20 25 30 35 40
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
500
150
1000.0 200 60
RDS(ON)
limited
100.0 100µ 160 TJ(Max)=175°C
Tc=25°C
10.0 100µs
ID (Amps)

Power (W)

120
DC 1ms
1.0 80

TJ(Max)=175°C
0.1 TC=25°C 40

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

RθJC=3°C/W
Thermal Resistance

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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AOD486A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

110 55
100 50
ID(A), Peak Avalanche Current

90 45

Power Dissipation (W)

80 40
70 35
60 TA=150°C 30
TA=25°C
50 25
40 20
30 15
20 10
10 5
0 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, t A (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)
500
150
60 100 60
90 TA=25°C
50
80
Current rating ID(A)

40 70
Power (W)

60
30 50
40
20 30
20
10
10

0 0
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=60°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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