Channel MOSFET
Channel MOSFET
A MOSFET is formed when a lightly doped N-type substrate is connected to two highly doped P-Type
Materials. Doping refers to the concentration of impurities added to the atom.
The p-channel formed between the two P-type substrates could be consequence of induced voltages or
it could have existed previously.
P-Channel MOSFET
A P-Channel MOSFET is consists of a P-channel, which is a channel that is mostly made up of hole
current carriers. N-Type material is used for the gate terminals.
How the transistor operates and whether it turns ON/OFF is determined by the amount and type of
voltage (negative or positive).
This MOSFET is constructed with a lightly doped n-substrate. The length separates the two heavily
doped p-type materials (L). This L is referred to as the channel length.
Above the substrate, a thin layer of type silicon dioxide is deposited. This layer is commonly referred to
as the dielectric layer. The source and drain are formed by the two P-types. The gate terminal is formed
by the aluminum plating used above the dielectric. The ground is connected to the source and the body
of the MOSFET.
The gate terminal has been subjected to a negative voltage. Because of the effect of capacitance, the
positive concentration of charges settles below at the dielectric layer. Because of repulsive forces, the
electrons present at the n-substrate are shifted, and the uncovered value of the positive ions layer can
be found there. In an n-type substrate, the holes, which are minority carriers, combine with a few
electrons to form a bond.
However, further application of the negative voltage cracks the covalent bonds, thereby breaking the
pairs formed between electrons and holes.
It results in the formation of holes and an increase in the carrier concentration of holes in the channel.
When a negative voltage is applied to the drain terminal, the channel becomes conductive, allowing
current to flow through the transistor.
With a sufficient positive voltage, V s applied to the source and load, and a sufficient negative voltage
applied to the gate, the P-Channel Enhancement-type MOSFET is fully functional and operating in the
active ‘ON’ Mode.
There are two ways to turn OFF a P-Channel enhancement type MOSFET. You can either disconnect the
bias positive voltageV s , which powers the source. Alternatively, you can disable the negative voltage
applied to the transistor’s gate.