EC-401 Microwave Engineering (3 1 0 4)
EC-401 Microwave Engineering (3 1 0 4)
Unit-I Microwave Tubes: UHF limitations in conventional tubes, Analysis and operation of multicavity and reflex, Klystron, Admittance diagram of Klystron. Analysis and Operation of a traveling wave magnetron, Performance Charts of magnetron tubes; principle of operation of Traveling Wave Tube. Microwave Components: Coupling-probes and loops Apertures, Attenuators, Phase shifters. Waveguide cornors,bends and twists. Matched Terminators, short circuit plunger, waveguide tees-E, Hybrid. Hybrid rings. Directional Coupler, two-hole directional coupler. Isolator, Circulator. Unit-II Microwave Semiconductor Devices: Classification of Microwave Devices, Point Contact diode; Tunnel Diode; Gunn Diode, two valley structures, mode of operation, circuit realization. IMPATT Diode, read Diode, circuit realization. PIN diode, basic principles of operation equivalent circuit , and application as switch, modulator and Phase shifter. Microwave Bi-polar and Field effect Transistors-Characteristics and performance. Parametric amplifiers. Unit-III Microwave Network Theory: Symmetrical Z and Y Matrics for reciprocal network. Scattering mamatriz representation of multiport network-properties of S-parameters. Relation of Z,Y and ABCD parameter with S-parameters. Microwave measurements: Tunable detector, slotted line carriage. Measurement of VSWR and Reflection coefficient, impedance using slotted line. Use of smith chart. Impedance matching, Double and triple stub tuners, Quarter wave Transformer. Measurement of Frequency and Wavelenght. Measurement of Frequency and wavelength. Measurement of Microwave power-low-high, use of bolometer, thermisters, calotimetery.
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Books Recommended 1. Reich A J, Microwave principles, Van Nostrand, Affilated East-West press Pvt. Ltd., New Delhi. 2. Collin R E, Fundamentals of Microwave Engg, McGraw-Hill. 3. Liao S Y, Microwave Devices and Circuits, Prentice hall of India, (1995) 4. Das A and Das S K, Microwave Engineering Tata McGraw-Hill Publishing Companty Limited, New Delhi,(2001). 5. K C Gupta, Microwave, New Age International, New Delhi,(1983)
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EC-403 Microelectronics [3 1 0 4]
Unit-I Electronic-Grade Silicon: Crystal growth-Czochralski, LCE, Zone-refining and floating zone. Wafer preparation. Epitaxy, VPE, LPE, MBE, MOCVD. An Overview Of IC Technology, And Its Requirements: Unit steps used in IC Technology: Wafer cleaning, , oxidation, characterization of oxide films, diffusion, ion implantation, annealing-RTA. Photolithography, E-beam lithography and newer lithography techniquues for VLSI/ULSI; mask generation, wet and dry etching. Unit-II CVD and LPCVD techniques for deposition of poly silicon, silicon nitride and silicon dioxide. Metallisation and passivation. Special Techniques For Modern Processes: self-aligned silicides, shallow junction formation, nitride oxides etc. process flows for CMOS and bipolar IC processes. Plasma And Rapid Thermal-Processing: Plasma etching, RIE techniques, RTP for annealing, growth and deposition of films testing, bonding, packaging. Evaluation and measurement techniques. Unit-III Thin Film And Thick Film Technology, hybrid circuits,circuit elements: Diodes, resistors, capacitors, inductors, contacts and interconnections. Sub Micron Device Physics and Technology: Review of basic device physics, MOS capacitor and transistor theory, Moore law on technology scaling, Short channel effects, sub threshold leakage, Punch through, DIBL, High field mobility, Velocity saturation and overshoot Books Recommended 1. May G S and Sze S M, Fundamentals of Semiconductor Fabrication, John Wiley & Sons, India.(2004) 2. Sze S M, VLSI Technology, 2nd Ed., McGraw Hill International Edition (1988) 3. Ghandhi S K, VLSI fabrication Principles, John Wiley Inc., New York (1983). 4. Streetman BG, Solid State Electronics Devices, Prentice Hall of India, New Delhi, (1995). 5. Chang C Y and Sze S (Ed),ULSI Technology, McGraw-Hill Companies Inc. (1996).
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