BTS 7960 High Current PN Half Bridge NovalithIC™ 43 A, 7mQ+9mQ thinking.BTS 7960 ¢ Infineon High Current PN Half Bridge Product Summary Basic Features 1 Overview ........ 1.1 Block Diagram - 1.2 Terms . 2 Pin Configuration 2.1 Pin Assignment 2.2 Pin Definitions and Functions 3 Maximum Ratings 4 Block Description and Characteristics 4.1 Supply Characteristics 4.2 Power Stages .. 4.2.1 Power Stages - Static ‘Characteristics 4.2.2 Switching Times 4.2.3. Power Stages - Dynamic Characteristics 4,3 Protection Functions 4.3.1 Overvoltage Lock Out 4.3.2. Undervoltage Shut Down 4.3.3. Overtemperature Protection .. 4.3.4 Current Limitation . vec ceee neste es 4.3.5 Short Circuit Protection ........... 0.2... eee 4.3.6 Electrical Characteristics - Protection Functions 4.4 Control and Diagnostics 4.4.1 Input Circuit . 4.4.2 Dead Time Generation 4.4.3 Adjustable Slew Rate ... 4.4.4 Status Flag Diagnosis With Current Sense Capability 4.45 Truth Table : 4.4.6. Electrical Characteristics - Control and Diagnostics 5 Thermal Characteristics ................. 6 Application ....... 6.1 Application Example 6.2 Layout Considerations 7 Package Outlines P-TO-263-7 8 Package Outlines P-TO-220-7 ............ 9 Revision History Data Sheet 1 Rev. 1.1, 2004-12-07¢ Infineon High Current PN Half Bridge BTS 7960B Novalithic™ BTS 7960P Product Summary The BTS 7960 is a fully integrated high current half bridge for motor drive applications. It is part of the NovalithiC™ family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features | logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against BTS 7960P overtemperature, overvoltage, undervoltage, P-TO-220-7 overcurrent and short circuit The BTS 7960 provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption. BTS 7960B P-T0-263-7 a Basic Features Path resistance of typ. 16 mQ @ 25°C Low quiescent current of typ. 7 uA @ 25°C PWM capability of up to 25 kHz combined with active freewheeling Switched mode current limitation for reduced power dissipation in overcurrent Current limitation level of 43 A typ. Status flag diagnosis with current sense capability Overtemperature shut down with latch behaviour Overvoltage lock out Undervoltage shut down Driver circuit with logic level inputs Adjustable slew rates for optimized EMI Type Ordering Code Package BTS 7960B (Q67060-S6160 P-TO-268-7 BTS 7960P ‘on request P-TO-220-7 Data Sheet 2 Rev. 1.1, 2004-12-07Cc High Current PN Half Bridge Infineon BTS 7960 Overview 1 Overview The BTS 7960 is part of the NovalithIC™ family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadframe, using the chip on chip and chip by chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTS 7960 can be combined with other BTS 7960 to form H-bridge and 3-phase drive configurations. V1 Block Diagram BTS 7960 HS base-chip| | vs Top-chip Gate Driver OUT Dead Time Gen. Slew Rate Adj UV Shut Down LS base-chip| ‘OV Lock Out SR [| OT Shut Down Current Lim. IH Diagnosis. 7 is [ Current Sense ed Figure 1 Block Diagram INC Fy INH [} & GND Data Sheet 3 Rev. 1.1, 2004-12-07Tnfin High Current PN Half Bridge Natl BTS 7960 Overview 1.2 Terms Following figure shows the terms used in this data sheet. hy e IN Vn y in lous! ——+4 burs Vives BTS 7960 = our} => | V, Viug —__* bse ‘sous) ‘ou Ver _2ie_ Is GND Ms OF =~ fous) Figure2 Terms Data Sheet 4 Rev. 1.1, 2004-12-07High Current PN Half Bridge BTS 7960 Pin Configuration 2 Pin Configuration 24 Pin Assignment BTS 7960B BTS 7960P P-TO-263-7 P-T0-220-7 1934567 t un 13°57 Figure 3 Pin Assignment BTS 7960B and BTS 7960P (top view) 2.2 Pin Definitions and Functions Pin Symbol VO |Function 1 |GND -_ |Ground 2 IN 1 input Defines whether high- or lowside switch is activated 3 INH 1 J Inhibit When set to low device goes in sleep mode 48 ouT © _| Power output of the bridge 5 SR 1 |Slew Rate The slew rate of the power switches can be adjusted by connecting a resistor between SR and GND 6 ls © _ |Current Sense and Diagnosis 7 vs - | Supply Bold type: pin needs power wiring Data Sheet 5 Rev. 1.1, 2004-12-073 Maximum Ratings -40 °C < T; < 150 °C (unless otherwise specified) High Current PN Half Bridge BTS 7960 Maximum Ratings Pos | Parameter Symbol | Limits | Unit | Test Condition min | max Electrical Maximum Ratings 3.0.1 | Supply voltage Ws |-03 [45 [Vv 3.0.2 | Logic Input Voltage Vin 03 |53 |v Vinu 3.0.8 |HSILS continuous drain | Ipqis) |-40 [400 |A | To < 85°C current Ipas) switch active 3.0.4 |HS pulsed drain current | Ips) _|-60 [60 |A | T¢<85°C 3.0.5 |LS pulsed drain current |/pqs) |-60 [60 [A _ | ‘pulse = 10ms 3.0.6 | Voltage at SR pin Ver |-0.3 [1.0 [V 3.0.7 | Voltage between VS and | Vyg-Vis|-0.3 [45 |V IS pin 3.0.8 | Voltage at IS pin Vis -20 [45 |v Thermal Maximum Ratings 3.0.9 | Junction temperature | 7) -40_[150 [°C 3.0.10 | Storage temperature Tstg -65 |150 |°C ESD Susceptibility 3.0.11|ESD susceptibility HBM | Vegp kV according to EIA/ JESD 22-A 1143 IN, INH, SR, IS 2) 2 OUT, GND, VS 6 | 6 *) Maximum reachable current may be smaller depending on current limitation level Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the device. Exposure to maximum rating conditions for extended periods of time may affect device reliability Data Sheet Rev. 1.1, 2004-12-074 4d -40 °C < T,< 150% Block Description and Characteristics Supply Characteristics BV | 2 1 y oy i c 1 [ 0.0.4 g | Jo.5s0.41 aa 7Tx0.603 |) 3 3 6 x.2t (5[0.250/AB [Ch = Core 1) Shear and punch direction no burrs this surface — Back side, heatsink contour All metal surfaces tin plated, except area of cut. You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www. infineon.com/produets, Dimensions in mm Data Sheet 24 Rev. 1.1, 2004-12-07High Current PN Half Bridge BTS 7960 Revision History 9 Revision History Revision | Date Changes / Comments na. 2004-03-18 | Target Data Sheet 09 2004-10-10 | Target Data Sheet converted to new layout 1.0 2004-11-30 | Preliminary Data Sheet A 2004-12-07 | “Preliminary” removed; No other changes Data Sheet 25 2004-12-07High Current PN Half Bridge Infineon Bre 79e0 Edition 2004-12-07 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Miinchen, Germany © Infineon Technologies AG 2004-12-07. All Rights Reserved. Attention please! ‘The information herein is given to describe certain components and shall not be considered as warranted characteristics. ‘Torms of dolivary and rights to technical change raserved, We hereby disclaim any and all warranties, including but not limited to warranties of non circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer iingoment, regarding Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings ‘Due to technical requirements components may contain dangerous substances. For information on the types in {question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in fe-support devices or systems with the express written approval of Infineon Technologies, if failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safely or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support andior maintain and sustain ander protect human iff they alt reasonable fo assume that the heath of tho user or ether persons may 8 endangerat Data Sheet 26 2004-12-07