Experiment No: 04

Name of the Experiment: Design Build and Simulate MOSFET as an Amplifier.

Name: Ayush Singh Division: CSBS

Roll No: PA21 Batch: 2
PRN: 1032221038
Marks Teacher’s Signature with date
Performed on: 12/04/2023

Submitted on: 03/05/2023

Aim: To design, build and simulate MOSFET as an amplifier. To find Voltage Gain (Av) of
amplifier.

Prerequisite: DC Characteristics of MOSFET, Basic MOSFET amplifier configurations,

Detailed understanding of common source configuration. Concept of Q point and biasing.

Objectives:
1. To build and test circuit of MOSFET amplifier on breadboard. Measure the voltage
gain (Av), input resistance (Ri), output resistance (Ro) and bandwidth.
2. To simulate circuit of MOSFET amplifier and measure voltage gain (Av), input
resistance (Ri), output resistance (Ro) and bandwidth.
3. Analyse practically obtained results and compare them with results obtained through
MOSFET small signal model.

Components and equipment required:

BS170 MOSFET, Power Supply (0-30V), Resistors, Capacitors, Bread Board, MULTISIM
software, Function Generator, CRO and Digital Multi-meter.

Theory:

• Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is an excellent device

for small signal linear amplifiers as their input impedance is extremely high making
them easy to bias.

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 • For linear amplification MOSFET is operated in saturation region.
• An enhancement MOSFET does not conduct when the gate-source voltage VGS is less
than the threshold voltage Vth but as the gate forward bias increases, the drain
current, ID (also known as drain-source current IDS) will also increase, making the
EMOSFET ideal for use in MOSFET amplifier circuits.
2
• EMOSFET Drain current is given by I D =K n (V GS −V th )
• The values of Kn (conduction parameter) and Vth (threshold voltage) vary from one
EMOSFET to another and cannot be physically changed as they are specific
specification of the material and device geometry which are in-built during the
fabrication of the transistor.
• The universal voltage divider biasing circuit is a popular biasing technique used to
establish a desired DC operating condition of MOSFET amplifiers. The advantage of
the voltage divider biasing network is that the MOSFET can be biased from a single
DC power supply.
• If a small time-varying signal is applied to the input, the MOSFET circuit can act as a
linear amplifier provided the transistors Q-point is somewhere near the centre of the
saturation region, and the input signal is small enough for the output to remain linear.

The different performance parameters of MOSFET amplifier are:

1) Gain: (Av= Vout/Vin)
The voltage gain Av of an ideal amplifier should be infinity and practically it should be as
large as possible.
2) Input Resistance: Ri
The input resistance of an ideal amplifier should be infinity and practically it should be as
large as possible.
3) Output Resistance: Ro
For an ideal amplifier output resistance should be zero. Practically it should be as low as
possible.

Common Source MOSFET Amplifier

The enhancement-mode common source MOSFET amplifier configuration uses a
single supply at the drain and generates the required gate voltage, VG using a resistor
divider. Figure 1 shows basic MOSFET amplifier and its load line.

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 Figure 1: Common Source amplifier using MOSFET and load line

No gate current flows into the gate terminal. Following equations can be written about
DC bias conditions.

V DD=R D I D +V DS + I D R S…………………(3.1)

V DD −V DS
R D + RS = …………………………(3.2)
ID
From the circuit,
V DD − V D VS
R D= ∧RS = ……………(3.3)
ID ID

The MOSFETs gate-to-source voltage, VGS is given as:

V GS =V G − I S R S …………………………….(3.4)

For proper operation of the MOSFET, this gate-source voltage must be greater than the
threshold voltage of the MOSFET, that is VGS > Vth. Since IS = ID, the gate to source
voltage, VGS is therefore equal to:
V GS =V G − I D RS ………………………………(3.5)
V G =V GS + I D RS ……………………………...(3.6)
or
V G =V GS +V S …………………………………(3.7)
As “no current” flows into the gate terminal of a MOSFET device so the formula for voltage
division is given as:

V G =V DD ¿ …………………………….(3.8)

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Note that this voltage divider equation only determines the ratio of the two bias
resistors, R1 and R2 and not their actual values. Also it is desirable to make the values of these
two resistors as large as possible to reduce their I2R power loss and increase the MOSFET
amplifiers input resistance.

MOSFET AMPLIFIER DESIGN

Design common source MOSFET amplifier using n-channel MOSFET which has a conduction
parameter of 50mA/V2 and a threshold voltage of 2.0 volts. If the supply voltage is +15 volts
and the load resistor is 470 ohms, calculate the values of the resistors required to bias the
MOSFET amplifier at 1/3Vdd. Also find out values of coupling capacitor for Lower cut off
frequency of 20Hz.

Values given: VDD = +15v, VTN = +2.0v, k = 50mA/V2.

1. Drain Current, ID
V DD 15
V DS= = =7.5 V
2 2
Let’s design the Amplifier for I D =16 mA

2. Gate-source Voltage, VGS
I D =K n (V GS −V TN )2

V GS =
√ ID
Kn √
+ V th =
0.016
0.05
+2=2.6Volt

3. Gate Voltage, VG
1 15
V G = V DD = =5 Volt
3 3

V S =V G −V GS =5 −2.6=2.4 Volts

4. Source Resistance, RS

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 VS 2.4
R S= = =150 Ω
I D 0.016
5. Biasing Resistors, R1 , R 2
The ratio of the voltage divider resistors, R1 and R2 required to give 1/3VDD is
calculated as:

V G =V DD ( R2
)
R 1+ R 2
=15 ¿)

Choose: R1 = 2MΩ and R2 = 1MΩ this will satisfy the condition of: VG = 1/3VDD. Also

this combination of bias resistors will give an input resistance to the MOSFET amplifier
of approximately 67kΩ.
R 1 × R 2 2 MΩ×1 MΩ
R¿ = = =0.67 MΩ
R1 + R2 2 MΩ+ 1 MΩ

6. Drain Resistance, RD
Thus applying KVL to output loop of the MOSFET Amplifier,
V DD − I D R D − V DS − I D R S =0

∴ 15− 16 ×10− 3 ( R D +150 ) −7.5=0

∴ R D =318Ω
We will select while implementing, nearest value available of MFR 470 Ω for RD
7. Calculating the values of the input and output coupling capacitors
Lower cut-off frequency required for MOSFET amplifier is 20Hz, then the
values of the two capacitors taking into account the input impedance of the gate
biasing network is calculated as:

1
f −3 db=
2 ∏ R¿ C
1
C= =0.012 µF
2∏ ×20 × 670000

8. Calculate Voltage gain AV

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 AV =−Y fs R D

Y fs =2 × K n ×(V GS −V TN )

−3
Y fs =2 ×50 × 10 × ( 2.6 −2.0 )=60 mA /V

AV =−Y fs R D= -0.06 × 470=19.08

Figure 2: MOSFET Common Source Amplifier as per design

Procedure:
1. Build the circuit of MOSFET amplifier as shown in Figure 2 using bread board. Carry
out DC analysis of above amplifier and note down VDSQ, VGSQ , VS, VD, VG, IDQ .
2. Apply sinusoidal input signal of 1kHz and adjust its amplitude in mV so as to get
maximum undistorted output.
3. Measure the o/p (Vo) on CRO. Observe input and output waveform simultaneously to
see phase difference.
4. Calculate voltage gain using equation 3.9.
5. Build the circuit of MOSFET amplifier as shown in Figure 2 using MULTISIM
simulator and repeat above steps to calculate performance parameters of amplifier
using simulation.

Observation Table:

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 Table 1: DC Analysis
Parameter Simulated

1 VDSQ 4.185 V

2 VGSQ 2.383 V

3 VG 4.997 V

4 VD 6.801 V

5 VS 2.617 V

6 IDQ 17.444 mA

Table 2: Amplifier Performance Parameters (AC Analysis)

Vin = _20 mV volts (constant), Vo = 0.5 V
Gain= V0/ Vin = 0.5V /0.02V = 25V

Conclusion:
MOSFETs can be used as amplifiers due to their ability to control the flow of current through
the device using a voltage applied to the gate. The MOSFET amplifier designed in the
experiment successfully amplified an input signal and produced an output signal with a higher
voltage level. By properly biasing the MOSFET's gate, the device could be used as a voltage
amplifier with a gain of around 10. The simulation results showed that the MOSFET amplifier
had a linear response to input signals within a certain range. The experiment successfully
demonstrated the functionality of a MOSFET as an amplifier and highlighted its usefulness in
electronic circuits.

Post Lab Questions:

1. What is the difference between enhancement and depletion MOSFET
2. Compare BJT and MOSFET

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Additional links for more information:
https://ocw.mit.edu/courses/electrical-engineering-and-computer-science/6-012-
microelectronic-devices-and-circuits-fall-2009/lecture-notes/
MIT6_012F09_lec17.pdf

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 Expt. 3- 9

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