BITS Pilani

t o f g ,
K K Birla Goa Campus

e n e r i n
a rt m i n e
e p E n g
D al
n i c
c ha
ME F216: MATERIAL SCIENCE AND ENGINEERING
n i
M e P i l a
S
Lecture-4:
T u s
BI
Diffusion
Lecture-1: in solids
a m p
Introduction to Material
a C
Dr. Sudhy S. Panicker
G
Science and Engineeringo
i rl a
Department of Mechanical Engineering
Chamber: E-115

K B
Email: [email protected]

K
ME F216: Material Science and Engineering Lecture-4 BITS Pilani, K K Birla Goa Campus
 Diffusion

t o f g ,
n n
Diffusion - Mass transport by atomic

e
motion. Diffusion is a consequence of
m e r i
a rt i n
the constant thermal motion of atoms,
e
p g
molecules and particles that results in

e
D al
low concentration.
E n
material moving from areas of high to

Mechanisms

n i c
c ha
• Brownian motion: seemingly random

n i
a
movement of particles suspended in

M e
a liquid or gas.
P i l
S s
• Solids – vacancy diffusion or

BI
interstitial diffusion.
T pu
C a m
o a
l a G
B i r
K K
ME F216: Material Science and Engineering Lecture-4 2 BITS Pilani, K K Birla Goa Campus
 Diffusion demo

t o f g ,
e n e r i n
a rt m in e
ep E n g
D al
•
n i c
Glass tube filled with water.
•
ha n i
At time t = 0, add some drops of ink to one end of the tube.
c
•
• e i l a
Measure the diffusion distance, x, over some time.

M P
Compare the results with theory.

T S u s
BI a m p
a C
G o
i rl a
K B
K
ME F216: Material Science and Engineering Lecture-4 3 BITS Pilani, K K Birla Goa Campus
 Diffusion

t o f g ,
e n e r in
a rt m i n e
ep E n g
D al
n i c
c ha n i
M e P i l a
T S u s
BI a m p
a C
G o
i rl a
K B
K
ME F216: Material Science and Engineering Lecture-4 4 BITS Pilani, K K Birla Goa Campus
 Diffusion Mechanisms

t o f g ,
n in
• Atoms in solid materials are in constant motion, rapidly changing positions.
•
m e e r
For an atom to move, 2 conditions must be met:
t e
p a r i n
1. There must be an empty adjacent site, and
g
e E n
2. The atom must have sufficient (vibrational) energy to break bonds with
D al
its neighboring atoms and then cause lattice distortion during the

i
displacement.
n c
ha i
At a specific temperature, only a small fraction of the atoms is capable

c n
e l a
of motion by diffusion. This fraction increases with rising temperature.

M P i
T S u s
BI
• There are 2 dominant models for metallic diffusion:
1. Vacancy Diffusion
m p
2. Interstitial Diffusion
C a
o a
l a G (a) Diffusion of copper atom A at position

r
1 on the (111) plane of a copper crystal

i
lattice to position 2 (a vacancy site) if

K B sufficient activation energy is provided

as indicated in (b).

K
ME F216: Material Science and Engineering Lecture-4 5 BITS Pilani, K K Birla Goa Campus
 Vacancy Diffusion

t o f g ,
• atoms exchange with vacancies
e n e r in
m
• applies to substitutional impurity atoms
• rate depends on:
a rt i n e
ep
-- number of vacancies
E n g
D al
-- activation energy to exchange

n i c
c ha n i
M e P i l a
T S u s
BI a m p
a C
G o
i rl a increasing elapsed time

K B
K
ME F216: Material Science and Engineering Lecture-4 6 BITS Pilani, K K Birla Goa Campus
 Self and Interstitial Diffusion
Self-diffusion: In an elemental
t o f g ,
n
Interstitial diffusion – smaller atoms (H, C, O, N)
solid, atoms also migrate.

m e n e r i can diffuse between atoms.

specific atom movement

a rt i n e
C D ep E n g
ca l
A
a n i
D
e c h a n i
MB P i l More rapid than vacancy diffusion due to

T S u s
more mobile small atoms and more empty

BI p
After some time
m
interstitial sites.
C
C a
o a
A
D
l a G
B
B i r
K K
ME F216: Material Science and Engineering Lecture-4 7 BITS Pilani, K K Birla Goa Campus
 Interdiffusion

t o f g ,
n in
• Interdiffusion (impurity diffusion): In an alloy, atoms tend to migrate from

e e r
m
regions of high concentration to regions of low concentration.

a rt i n e
ep E n g After some time

D al
c
Initially

a n i
e c h a n i
M P i l
T S u s
BI a m p
a C
G o
i rl a
K B
K
ME F216: Material Science and Engineering Lecture-4 8 BITS Pilani, K K Birla Goa Campus
 Activation Energy

t o f g ,
n
• A diffusing atom must squeeze past the

e e r in
m
surrounding atoms to reach its new site.

rt i n e
• Energy must be supplied to allow the atom to
a
ep n g
move to its new position, as shown schematically

E
D al
for vacancy and interstitial diffusion

n i c
c ha n i
M e P i l a
Take ‘log10’ or ‘ln’

S s
Arrhenius Equation:

BI T pu  −Q 

m
Rate = C0 exp 

a

 RT 

a C
G o
i rl a
K B
K
ME F216: Material Science and Engineering Lecture-4 9 BITS Pilani, K K Birla Goa Campus
 Activation Energy

t o f g ,
Q:Suppose that interstitial
e n e r in
m
atoms are found to move

a r
from one site to another at
t i n e
ep
the rates of 5x108 jumps/s at

E n g
D al
500°C and 8x1010 jumps/s at

c
800°C.

a n i
e c h
Calculate the activation

a n i
energy Q for the process.

M P i l
T S u s
BI a m p
 −Q 
Rate = C0 exp  
a C
o
 RT 

l a G
B i r
K K
ME F216: Material Science and Engineering Lecture-4 10 BITS Pilani, K K Birla Goa Campus
 Class work

t o f g ,
• Solution
e n
Rate = C0 exp 

e r i
 −Q 
n
t m e
 RT 
5 ×108 =

c0 exp 
−Q

p a r 

g i n
e n

1.987(500 + 273) 

D al
c0 exp(−0.000651Q) − − − − − (1)
E
8 ×1010 =

c0 exp 
n
−Q
i c 

a


h i
1.987(800 + 273) 

e c
c0 exp(−0.000469Q) − − − −(2)

i l a n
M
Either do (1)/(2); OR
S P s
T u
or

BI m p
substitute c0 (constant) from (1) in (2):

c0 =
5 ×108
;
C a
a
exp(−0.000651Q)
5 ×108 exp(−0.000469Q)
G o
a
10
⇒ 8 ×10 =

rl
exp(−0.000651Q)
[ ]
⇒ 160 exp (0.000651 − 0.000469)Q
=
B i
ln(160) 0.000182=
⇒=

K K
Q ⇒ Q 27885cal/mol

ME F216: Material Science and Engineering Lecture-4 11 BITS Pilani, K K Birla Goa Campus
 Processing using diffusion
•
t
Diffusion in Semiconducting Devices
o f g ,
e n e r in
• Doping – Diffusion of very small concentrations of atoms of an impurity

rt m
(e.g., P) into the semiconductor silicon.
a i n e
ep E n g 3. Result is P doped

D al
• Process: semiconductor regions
1. Deposit P rich layers on surface

i c
2. Heat treat the

n
sample to drive in P

c ha n i
a
silicon
e l
silicon

M P i
T S u s
BI p
Conducting ceramics, thermal barrier coatings,
optical fibers, powder metallurgy, etc.

C a m
a
• Case Hardening (Carburizing):
– Diffuse carbon atoms into the host
G o
iron atoms at the surface.

i rl a
– Example of interstitial diffusion is a
case hardened gear.
K B Chapter-opening photograph, Chapter

K
5, Callister & Rethwisch 10e. (Courtesy
of Surface Division, Midland-Ross.)

ME F216: Material Science and Engineering Lecture-4 12 BITS Pilani, K K Birla Goa Campus
 Carburizing

t o f g ,
e n e r in
m
~925oC

a rt i n e
ep E n g
D al
n i c
c ha n i
M e P i l a
T S u s
BI a m p
C
• Result: The "Case" is

a
– hard to deform: C atoms "lock"
o
G
planes from shearing.

i rl a– hard to crack: C atoms put

B
the surface in compression.

K K
ME F216: Material Science and Engineering Lecture-4 13 BITS Pilani, K K Birla Goa Campus
 Rate of diffusion
•
t o f
Diffusion is a time-dependent process.
g ,
•
e n r in
Rate of Diffusion- expressed as diffusion flux, J

e
a r t m i n e
p g
moles (or mass) of diffused species M mol kg

e n
J ≡ Flux ≡ = 2 or 2
(
D al
)( )
E
surface area time At cm s m s

n i c
•
h a
Measured experimentally
c n i
M e P i l a
– Use thin sheet (or membrane) – cross-sectional area A

s
– Impose concentration gradient across sheet

T S u
BI p
– Measure mass of diffusing species (M) that passes through the

m
sheet over time period (t)

C a
M 1 dM
o a M=
J =
=
At A dt
l a G mass

r
diffused

B i time

K K
ME F216: Material Science and Engineering Lecture-4 14 BITS Pilani, K K Birla Goa Campus
 Steady-state diffusion

t o f g ,
n
Rate of diffusion is independent of time; diffusion flux does not
change with time.

m e n e r i
a rt i n e
ep E n g
D al
n i c
c ha n i
M e P i l a
T S u s
BI a m p
a C
G o
i rl a
K B
The concentration profile shows the concentration (C) vs the position within
the solid (x); the slope at a particular point is the concentration gradient.

K
ME F216: Material Science and Engineering Lecture-4 15 BITS Pilani, K K Birla Goa Campus
 Fick’s first law of diffusion

t o f g ,
e n r
Rate of diffusion (or flux) independent of time
e in
a rt m i n e
Flux (J) proportional to concentration gradient:

ep E n g C = concentration
D al x = diffusion direction

C1 C1
n i c
a
Fick’s first law of diffusion

e c h a n i
C
M P i l
T S C2
u s
BI p
C2

C a m
a
x1 x2 D = diffusion coefficient
x

G o
x −x i
dC ∆C C − C
rl a Ex.: Palladium for purification
B
if linear ≅ = 2 1
dx ∆x
K
2 1 of hydrogen gas

K
ME F216: Material Science and Engineering Lecture-4 16 BITS Pilani, K K Birla Goa Campus
 Fick’s* I law As we shall see the ‘law’ is actually an equation

 Assume that only species ‘S’ is moving across an area ‘A’. Concentration gradient for
species ‘S’ exists across the plane.

t o f g ,
n in
 The concentration gradient (dc/dx) drives the flux (J) of atoms.
e er
a r t m i n e
 Flux (J) is assumed to be proportional to concentration gradient.

g
 The constant of proportionality is the Diffusivity or Diffusion Coefficient (D).

e
D al p E n
 ‘D’ is assumed to be independent of the concentration gradient.
 Diffusivity is a material property. It is a function of the composition of the material
and the temperature.
n i c
c h a n i
 In crystals with cubic symmetry the diffusivity is isotropic (i.e. does not depend on direction).

M e P i l a
 Even if steady state conditions do not exist (concentration at a point is changing with
time, there is accumulation/depletion of matter), Fick’s I-equation is still valid (but
not easy to use).
T S u s
BI
The negative sign implies that

a
A material property
m p
C Flow direction
diffusion occurs down the

dc dn oa dc
concentration gradient

J∝
dc
J = −D
dc
J=
1 dn
= −D
l a G = − DA
dx dx A dt
Fick’s first law (equation) B
i rdx dt dx
Area

K K
ME F216: Material Science and Engineering Lecture-4 17
* Adolf Fick in 1855

BITS Pilani, K K Birla Goa Campus

Let us emphasize the terms in the equation

t o f g , Diffusion coefficient/Diffusivity

dn e n e
dcr in
No. of atoms
a rt m = − DA
i n e
e p
crossing area A
time dtEn
g dx
Concentration gradient

D al
per unit
c
Cross-sectional area

a n i −ve sign implies matter transport is down the

e c h a n i
concentration gradient

M A
Flow direction P
i l
I T S 

p
J =
u s
dc   number 
−D  →  [
= D ]
 number 1 
⋅ 

B
 

m
2 3
 dx   m s   m m

C a
 As a first approximation
o a Note the strange unit
 m2 
assume D ≠ f(t)
l a G  s  = [ D]
 

B i r
Let us look at the units of Diffusivity
of D: [m /s] 2

K K
ME F216: Material Science and Engineering Lecture-4 18 BITS Pilani, K K Birla Goa Campus
 Class work

t o f g ,
e n e r in
a rt m i n e
ep E n g
D al
n i c
c ha n i
M e P i l a
T S u s
BI a m p
a C
G o
i rl a
K B
K
ME F216: Material Science and Engineering Lecture-4 19 BITS Pilani, K K Birla Goa Campus
 Chemical Protective Clothing (CPC)

t o f g ,
e n e r in
m
• Methylene chloride is a common ingredient of paint

a r
removers. Besides beingt an
i n
irritant, eit also may be
e
absorbed throughp skin.
E
Whenn g
using this paint remover,
D should a l
c
protective gloves be worn.
Lets investigaten
a i
•
e c h
whether
found in the kitchen n
a i
butyl rubber gloves (0.04 cm
thick) commonly
M
protective gloves. P i l can be used as

I T S p u s
•
B /s
Note: The maximum allowable flux for a 150 lb
a m
person is
less than 3.5 x 10 g/cm
C
-7 2

• Compute the diffusion flux of methylene

o a chloride
through the gloves.
l a G
B i r
K K
ME F216: Material Science and Engineering Lecture-4 20 20
BITS Pilani, K K Birla Goa Campus
 Chemical Protective Clothing (CPC)

t o f
• Solution – diffusion flux of methylene chloride
g ,
e n e r in
m
assume linear conc. gradient

a rt i n e
p g
glove
C1
e
D al E n
paint
n i c skin
remover

c ha Data:
n i
D = 110 x 10-8 cm2/s

M e x1 x2
C2

P i l a C1 = 0.44 g/cm3
C2 = 0.02 g/cm3

T S u s
BI p
x2 – x1 = 0.04 cm

C a m
o a
l a G
B i r
Note: this is more than 30 times the allowable flux.

K K
Unsafe to use these gloves for paint removal.
ME F216: Material Science and Engineering Lecture-4 21 21
BITS Pilani, K K Birla Goa Campus
 Non-steady state diffusion

t o f g ,
e n e r in • The concentration of diffusing species is a

a rt m i n e
function of both time and position C = C(x,t).
More likely scenario than steady state.

ep E n g
D al • In this case, Fick’s Second Law is used.

n i c
c ha n i
M e P i l a
T S u s
BI a m p
a C
G o
i rl a
K B
K
ME F216: Material Science and Engineering Lecture-4 22 BITS Pilani, K K Birla Goa Campus
 Fick’s second law

t o f g ,
e n e r in  Let us consider a 1D diffusion problem.

m e
 Let us consider a small element of width ∆x in the

a rt i n body.

ep E n g  Let the volume of the element be the control

D al volume (V) = 1.1. ∆x = ∆x. (Unit height and thickness).

n i c  Let the concentration profile of a species ‘S’ be as

a
in the figure.

e c h a n i  The slope of the c-x curve is related to the flux via

M P i l the Fick’s I-equation.

S s
 In the figure the flux is decreasing linearly.

BI T pu
 The flux entering the element is Jx and that leaving

C a mthe element is Jx+∆x.

 Since the flux at x1 is not equal to flux leaving that

o a leaving at x2 and since J(x1) > J(x2), there is an

l a G accumulation of species ‘S’ in the region ∆x.

i r
 The increase in the matter (species ‘S’) in the

K B control volume (V) = (∂c/∂t).V = (∂c/∂t). ∆x.

K
ME F216: Material Science and Engineering Lecture-4 23 BITS Pilani, K K Birla Goa Campus
 Fick’s second law

t o f g ,
Accumulation = J x − J x + ∆x
∆x
e n e r in
a r t m i n e  ∂J 
e p n
Accumulation
g = J − J + ∆x 
D al E
J x J x+∆x  ∂x 
x x

 ni∂c  Atoms 1    Atoms 

 ∆x = J − a
 ∂c  J 
 m s i.m =  m s  ≡ [J ]
 ∂t 
e c h J + x∆x 
∂x 
x

l a n   
3

2

M

P i
T S u s
 ∂cB I ∂  m p
 ∂c  ∂J
 ∆x = − ∆x   = −  − D 
∂c 
C a
Fick’s I law
 ∂t  ∂x  ∂t  ∂x 
o
∂x 
a
 ∂c  ∂  ∂c  D ≠ f(x) r  ∂lca
G
i
2
∂ c
  = D 
 ∂t  ∂x  ∂x  K B  =D
 ∂ t ∂ x
Fick’s II law
2

K
ME F216: Material Science and Engineering Lecture-4 24 BITS Pilani, K K Birla Goa Campus
 Fick’s second law

t o f
• Consider the diffusion of copper into a bar of aluminum
g ,
e n e r in
Surface conc.,

a rt m i n e bar

p g
C s of Cu atoms pre-existing conc., Co of copper atoms

e
D al E n This form of the equation assumes D is

c
Fick’s Second Law
i
independent of concentration

ha n i
e c i l a n
M S P Solution to 2o DE with 2 constants determined
s
BI T u
from Boundary Conditions and Initial Condition
p
C a m Boundary/Initial Conditions

o a
G
at t = 0, C = Co for 0 ≤ x ≤ ∞

rl a
Adapted: Callister
at t > 0, C = CS for x = 0 (constant
i
& Rethwisch 10e.

B
surface concentration)

K K
ME F216: Material Science and Engineering Lecture-4 25
C = Co for x = ∞
BITS Pilani, K K Birla Goa Campus
 Fick’s second law

t o f g ,
e n
 c( x, t ) − C er
i n
a rt m i n e  x 
p  g
 = 1 − erf
0

n
  
e
D al E
C − C  S 0  2 Dt 

n i c
c ha n i
M e P i l a
IT S ( ) 2
γ

∫ p u( su )du
B γ 2
Erf = exp −
πm
C a 0

o a  Erf (∞) = 1

l a G  Erf (-∞) = -1

B i r  Erf (0) = 0

K K
ME F216: Material Science and Engineering Lecture-4
 Erf (-x) = -Erf (x)
BITS Pilani, K K Birla Goa Campus
 Error function values

t o f g ,
e n e r in
a rt m i n e
ep E n g
D al
n i c
c ha n i
M e P i l a
T S u s
BI a m p
a C
G o
i rl a
K B
K
ME F216: Material Science and Engineering Lecture-4 27 BITS Pilani, K K Birla Goa Campus
 Factors influencing diffusion
•
t o f g ,
The diffusing species, host material and temperature influence the diffusion
coefficient.
e n e r in
–

a rt m i n e
For example, there is a significant difference in magnitude between self-diffusion and carbon
interdiffusion in α iron at 500 °C.
•
ep n g
Diffusion coefficient increases with increasing T

E
D al  Q 
D = diffusion coefficient [m2/s]

i c
=D D0 exp  − d  Do = pre-exponential [m2/s]

n
 RT 

a
Qd = activation energy [J/mol]
•

e c h a n i
Activation energy - energy required to produce the R = gas constant [8.314 J/mol-K]

M i l
movement of 1 mole of atoms by diffusion.

P
T = absolute temperature [K]

T S u s
BI a m p
C
Dinterstitial >> Dsubstitutional

o a C in α-Fe Al in Al

l a G C in γ-Fe Fe in α-Fe

r
Fe in γ-Fe
 Q 
B i Qd
K
=D D0 exp  − d  take natural log
ln
= D ln D0 −

K
 RT  of both sides
RT
ME F216: Material Science and Engineering Lecture-4 28 BITS Pilani, K K Birla Goa Campus
 Factors influencing diffusion

t o f g ,
e n e r in
a rt m i n e
ep E n g
D al
n i c
c ha n i
M e P i l a
T S u s
BI p
(FCC)

C a m
o a
l a G
B i r
K K
ME F216: Material Science and Engineering Lecture-4 29 BITS Pilani, K K Birla Goa Campus
 Class works

t o f g ,
n n
Q:At 300ºC the diffusion coefficient and activation energy for Cu in Si are: D(300ºC)

e e r i
= 7.8 x 10-11 m2/s; Qd = 41,500 J/mol. What is the diffusion coefficient at 350ºC?
m
a rt i n e
ep
ln D300
E
ln D0 −
=
n g
Qd  1 
 and ln D350 ln D0 −
=
Qd  1 

D al
  
R  T300  R  T350 

∴ ln D n i c
a
D Q  1 1 
 i −
h
350

n
− ln D = ln =− d

c

a
300

e l
350
D R  T T 
i
300 350 300

M S P s
 Q
D2 = D1 exp  − d
BI T  1 1 
 − 
pu T1 = 273 + 300 = 573 K

 R  T2 T1  

C a m T2 = 273 + 350 = 623 K

o a
l a G
r
 −41,500 J/mol  1 1 

i
D2 (7.8 x 10−11 m 2 /s) exp   −  D2 = 15.7 x 10-11 m2/s

K B
 8.314 J/mol-K  623 K 573 K  

K
ME F216: Material Science and Engineering Lecture-4 30 BITS Pilani, K K Birla Goa Campus
 Class works

t o f g ,
n
Q:An FCC iron-carbon alloy initially containing 0.20 wt% C is carburized at an elevated

m e n e r i
temperature and in an atmosphere in which the surface carbon concentration is

rt e
maintained at 1.0 wt%. If, after 49.5 h, the concentration of carbon is 0.35 wt% at a

a i n
g
position 4.0 mm below the surface, determine the temperature at which the treatment
was carried out.
e
D alp E n
c
Data given: t = 49.5 h; x = 4 x 10-3 m;

a n i Cx = 0.35 wt%; Cs = 1.0 wt%;

e c h
z

a n i Co = 0.20 wt%

i l
C ( x, t ) − Co 0.35 − 0.20  x 

M P
= = 1 − erf  
Cs − Co 1.0 − 0.20  2 Dt  erf(z) = 0.8125

T S u s
BI m p
Now determine from error function value table, the value of z for which the error function

a
is 0.8125. An interpolation is necessary as follows:

C
z erf(z)
o a
0.90 0.7970
l a G
z 0.8125
B i r z = 0.932 Now, solve for D

K
0.95 0.8209

K
ME F216: Material Science and Engineering Lecture-4 31 BITS Pilani, K K Birla Goa Campus
 Class works (soln. – continued)

t o f g ,
e n e r i
∴
=n  x2 
D  = 2 
(4 x 10−3 m) 2 1h

t m e
2
4 z t (4)(0.93) (49.5 h) 3600 s
r
 

p a g i n = 2.6 x 10−11 m 2 /s
e
D al E n
c
To solve for the temperature at which D has the Q
i −  d

T =an
above value, D D exp RT 
= 
i
Q
h
o

c n
d

M e R(ln D − ln D)

P i l
o
a
T S
From Table, for diffusion of C in FCC Fe:
u s
BI a m p
C
Do = 2.3 x 10-5 m2/s Qd = 148,000 J/mol

o a
T=
148, 000 J/mol

l a G
i r
(8.314 J/mol-K)[ln (2.3 x 10−5 m 2 /s) − ln (2.6 x 10−11 m 2 /s)]

B
K K
ME F216: Material Science and Engineering Lecture-4
T = 1300 K = 1027°C
32 BITS Pilani, K K Birla Goa Campus
 Diffusion in material processing

t o f g ,
n in
• Volume diffusion
• Grain boundary diffusion
t m e e e r
• Surface diffusion

p a r g i n
e
D al E n
i c
Sintering: Powder metallurgy Melting and casting

ha n i
e c i l a n Grain growth

M S P s
BI T pu
C a m
o a
l a G
B i r
K K
ME F216: Material Science and Engineering Lecture-4 33 BITS Pilani, K K Birla Goa Campus
 Diffusion in material processing

t o f g ,
• Diffusion bonding
e n e r in
a rt m i n e
ep E n g
D al
n i c
c ha n i
M e P i l a
T S u s
BI a m p
a C
G o
The steps in diffusion bonding: (a) Initially the contact area is small; (b) application

l a
of pressure deforms the surface, increasing the bonded area; (c) grain boundary

i r
diffusion permits voids to shrink; and (d) final elimination of the voids requires
volume diffusion.
B
K K
ME F216: Material Science and Engineering Lecture-4 34 BITS Pilani, K K Birla Goa Campus
 Summary

t o f g ,
e n in
• Solid-state diffusion is mass transport within solid materials by stepwise

e r
t m e
atomic motion

p a r
• Two diffusion mechanisms
g i n
e
- Vacancy diffusion
D al
- Interstitial diffusion E n
n i c
ha
• Fick’s First Law of Diffusion

c n i
M e P i l a
S s
• Fick’s Second Law of Diffusion

BI T
- non-steady state diffusion
pu
• Diffusion coefficient
C a m
- Effect of temperature
o a
l a G
B i r
• Carburizing; diffusion in material processing

K K
ME F216: Material Science and Engineering Lecture-4 35 BITS Pilani, K K Birla Goa Campus