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ED - Mid Lecture-10 - Part 2

This document provides an overview of a lecture on electronic devices and circuit theory. It discusses various BJT configurations including the voltage-divider bias configuration, collector feedback configuration, and their exact and approximate analyses. It provides objectives of understanding key concepts such as saturation, cutoff, load-line analysis and stability factors. Examples are also presented to illustrate the analysis of different BJT configurations.
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0% found this document useful (0 votes)
28 views

ED - Mid Lecture-10 - Part 2

This document provides an overview of a lecture on electronic devices and circuit theory. It discusses various BJT configurations including the voltage-divider bias configuration, collector feedback configuration, and their exact and approximate analyses. It provides objectives of understanding key concepts such as saturation, cutoff, load-line analysis and stability factors. Examples are also presented to illustrate the analysis of different BJT configurations.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Electronic Devices

Mid Term
Lecture - 10

Faculty Name: Joheb Muhammad Tanzeer Sayeed


Email : [email protected]

Reference book:
Electronic Devices and Circuit Theory (Chapter-4)
Robert L. Boylestad and L. Nashelsky , (11th Edition)

Faculty of Engineering
American International University-Bangladesh
Objectives

• Be able to determine the dc levels for the variety of important BJT configurations.

• Understand how to measure the important voltage levels of a BJT transistor


configuration and use them to determine whether the network is operating properly.

• Become aware of the saturation and cutoff conditions of a BJT network and the
expected voltage and current levels established by each condition.

• Be able to perform a load-line analysis of the most common BJT configurations.

• Become acquainted with the design process for BJT amplifiers.

• Understand the basic operation of transistor switching networks.

• Begin to understand the troubleshooting process as applied to BJT configurations.

• Develop a sense for the stability factors of a BJT configuration and how they affect its
operation due to changes in specific characteristics and environmental changes.

Faculty of Engineering
American International University-Bangladesh
VOLTAGE-DIVIDER BIAS CONFIGURATION
• The bias current 𝐼𝐶𝑄 and voltage 𝑉𝐶𝐸𝑄 is a function of the current gain β
of the transistor
• Since β is temperature sensitive, especially for silicon transistors, it
would be desirable to develop a bias circuit that is independent of, the
transistor β.

The voltage-divider bias configuration is such a network.

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American International University-Bangladesh
EXACT ANALYSIS

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American International University-Bangladesh
EXAMPLE

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EXAMPLE CONTD.

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American International University-Bangladesh
Approximate Analysis

𝑅𝑖 = (β + 1) 𝑅𝐸 ≅ β𝑅𝐸

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American International University-Bangladesh
EXAMPLE

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American International University-Bangladesh
COLLECTOR FEEDBACK CONFIGURATION
• An improved level of stability can also be obtained by introducing a feedback path
from collector to base
• Although the Q-point is not totally independent of beta (even under approximate
conditions), the sensitivity to changes in beta or temperature variations is normally less
than encountered for the fixed-bias or emitter-biased configurations.
• The analysis will again be performed by first analyzing the base–emitter loop, with the
results then applied to the collector–emitter loop

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American International University-Bangladesh
BASE–EMITTER LOOP

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American International University-Bangladesh
COLLECTOR–EMITTER LOOP

EXAMPLE 4.12

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Thank You

Faculty of Engineering
American International University-Bangladesh

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