ADAMA SCIENCE& TECHNOLOGY UNIVERSITY

SCHOOL OF ELECTRICAL ENGINEERING & COMPUTING

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING
ELECTRONICS CIRCUITS-1 EXIT EXAM SAMPLE QUESTIONS
………………………………………………………………………………………………………………………………………………………………….

1. A semiconductor is formed by ……… bonds.

A. Covalent
B. Electrovalent
C. Co-ordinate
D. None of the above
2. A semiconductor has ................. temperature coefficient of resistance.
A. Positive
B. Zero
C. Negative
D. None of the above
3. When a pentavalent impurity is added to a pure semiconductor, it becomes ………
A. An insulator
B. An intrinsic semiconductor
C. p-type semiconductor
D. n-type semiconductor
4. A hole in a semiconductor is defined as …………….
A. A free electron
B. The incomplete part of an electron pair bond
C. A free proton
D. A free neutron
5. The battery connections required to forward bias a pn junction are ……
A. +ve terminal to p and –ve terminal to n
B. -ve terminal to p and +ve terminal to n
C. -ve terminal to p and –ve terminal to n
D. None of the above
6. A reverse bias pn junction has …………
A. Very narrow depletion layer
B. Almost no current
C. Very low resistance
D. Large current flow
7. A pn junction acts as a ……….
A. Controlled switch
B. Bidirectional switch
C. Unidirectional switch
D. None of the above
8. The leakage current across a pn junction is due to …………...
A. Minority carriers
B. Majority carriers
C. Junction capacitance
D. None of the above
 ADAMA SCIENCE& TECHNOLOGY UNIVERSITY
SCHOOL OF ELECTRICAL ENGINEERING & COMPUTING
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING
ELECTRONICS CIRCUITS-1 EXIT EXAM SAMPLE QUESTIONS
………………………………………………………………………………………………………………………………………………………………….

9. With forward bias to a pn junction, the width of depletion layer ………

A. Decreases
B. Increases
C. Remains the same
D. None of the above
10. The leakage current in a pn junction is of the order of
A. Aa
B. mA
C. kA
D. µA
11. In an intrinsic semiconductor, the number of free electrons ………
A. Equals the number of holes
B. Is greater than the number of holes
C. Is less than the number of holes
D. None of the above
12. At room temperature, an intrinsic silicon crystal act approximately as ……
A. A battery
B. A conductor
C. An insulator
D. A piece of copper wire
13. If the doping level of a Semiconductor diode is increased, the breakdown voltage………….
A. remains the same
B. is increased
C. is decreased
D. none of the above
14. Under normal conditions a diode conducts current when it is ……………
A. reverse biased
B. forward biased
C. avalanched
D. saturated
15. The term bias in electronics usually means ……….
A. the value of ac voltage in the signal.
B. the condition of current through a pn junction.
C. the value of dc voltages for the device to operate properly.
D. the status of the diode.
16. Mains a.c. power is converted into d.c. power for ……………...
A. lighting purposes
B. heaters
C. using in electronic equipment
D. none of the above
17. The disadvantage of a half-wave rectifier is that the……………….
 ADAMA SCIENCE& TECHNOLOGY UNIVERSITY
SCHOOL OF ELECTRICAL ENGINEERING & COMPUTING
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING
ELECTRONICS CIRCUITS-1 EXIT EXAM SAMPLE QUESTIONS
………………………………………………………………………………………………………………………………………………………………….

A. components are expensive

B. diodes must have a higher power rating
C. output is difficult to filter
D. none of the above
18. If the a.c. input to a half-wave rectifier is an r.m.s value of 400/√2 volts, then diode PIV
rating is ………………….
A. 400/√2 V
B. 400 V
C. 400 x √2 V
D. none of the above
19. The ripple factor of a half-wave rectifier is …………………
A. 2
B. 1.21
C. 2.5
D. 0.48
20. Which of the following rectifier needs a transformer for its operation?
A. half-wave rectifier
B. Centre-tap full-wave rectifier
C. bridge full-wave rectifier
D. none of the above
21. The PIV rating of each diode in a bridge rectifier is ......................... that of the equivalent
centre-tap rectifier
A. one-half
B. the same as
C. twice
D. four times
22. The DC current through each diode in a bridge rectifier equals:
A. The load currents
B. Half the DC load current
C. Twice the DC load current
D. One-fourth the DC load current
23. For the same secondary voltage, the output voltage from a centre-tap rectifier is …………
than that of bridge rectifier
A. twice
B. thrice
C. four time
D. one-half
24. If the PIV rating of a diode is exceeded, ………………
A. the diode conducts poorly
B. the diode is destroyed
C. the diode behaves like a Zener diode
 ADAMA SCIENCE& TECHNOLOGY UNIVERSITY
SCHOOL OF ELECTRICAL ENGINEERING & COMPUTING
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING
ELECTRONICS CIRCUITS-1 EXIT EXAM QUESTIONS
………………………………………………………………………………………………………………………………………………………………….
D. none of the above
25. A half-wave rectifier has an input voltage of 240 V r.m.s. If the step-down transformer has a
turns ratio of 8:1, what is the peak load voltage? Ignore diode drop.
A. 27.5 V
B. 86.5 V
C. 30 V
D. 42.5 V
26. The maximum efficiency of a half-wave rectifier is ………………...
A. 40.6 %
B. 81.2 %
C. 50 %
D. 25 %
27. A Zener diode is used as …………….
A. an amplifier
B. a voltage regulator
C. a rectifier
D. a multivibrator
28. Which block indicates a smooth dc output in power supply Block Diagram?
A. Transformer
B. Filter
C. Rectifier
D. Regulator
29. A Zener diode utilizes ................ characteristics for its operation.
A. forward
B. reverse
C. both forward and reverse
D. none of the above
30. In the breakdown region, a Zener diode behaves like a ..................... source.
A. constant voltage
B. constant current
C. constant resistance
D. none of the above
31. A Zener diode is destroyed if it…………...
A. is forward biased
B. is reverse biased
C. carries more than rated current
D. none of the above
32. A series resistance is connected in the Zener circuit to………...
A. properly reverse bias the Zener
B. protect the zener
C. properly forward bias the Zener
 ADAMA SCIENCE& TECHNOLOGY UNIVERSITY
SCHOOL OF ELECTRICAL ENGINEERING & COMPUTING
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING
ELECTRONICS CIRCUITS-1 EXIT EXAM QUESTIONS
………………………………………………………………………………………………………………………………………………………………….
D. none of the above
33. A Zener diode has .................... breakdown voltage
A. undefined
B. sharp
C. zero
D. none of the above

34. A transistor amplifier has a voltage gain of 100. If the input voltage is 75 mV, the
outputvoltage is:
A. 1.33 V
B. 7.5V
C. 13.3 V
D. 15 V

35. The base of a transistor is ........................ doped

A. Heavily
B. Moderately
C. Lightly
D. none of the above

36. In a transistor, the base current is about ............... of the emitter current.

A. 25%
B. 20%
C. 35%
D. 5%

37. In a common-emitter transistor amplifier circuit ẞ = 100, input resistance R₁ = 1 kΩ,

outputresistance R2 = 10 kΩ. The voltage gain of circuit is:

A. 100
B. 1000
C. 10
D. 5000

38. Three different Q points are shown on a dc load line. The upper Q point represents the:

A. minimum current gain

B. intermediate current gain
C. maximum current gain
D. cutoff point
39. What is the ratio of IC to IB?

A. DC
B. hFE
C. DC
D. either DC or hFE, but not DC

40. With the positive probe on an NPN base, an ohmmeter reading between the other transistor
terminals should be:

A. Open
B. infinite
C. low resistance
D. high resistance

41. If VCC = +18 V, voltage-divider resistor R1 is 4.7 k , and R2 is 1500 , what is the base bias
voltage?

A. 8.70 V
B. 4.35 V
C. 2.90 V
D. 0.7 V

42. In a C-E configuration, an emitter resistor is used for:

A. Stabilization
B. collector bias
C. higher gain
D. none of the above

43. The Q point on a load line may be used to determine:

A. VC
B. VCC
C. VB
D. IC
44. For transistor action, which of the following statements is correct?

A. Both emitter junction as well as the collector junction is forward biased.

B. The base region must be very thin and lightly doped.
C. Base, emitter and collector regions should have same doping concentrations.
D. Base, emitter and collector regions should have same size.

45. In a common emitter transistor amplifier the audio signal voltage across the collector is 3
V.The resistance of collector is 3 kn. If current gain is 100 and the base resistance is 2 kn,
thevoltage and power gain of the amplifier is.

A. 20 and 2000
B. 200 and 1000
 C. 15 and 200
D. 150 and 15000
46. For a transistor, B = 100. The value of a is

A. 1.01
B. 0.99
C. 100
D. 0.01

47. What is the collector current for a C-E configuration with a beta of 100 and a base current of
30 A?

A. 30 A
B. .3 A
C. 3 mA
D. 3 A

48. The input/output relationship of the common-collector and common-base amplifiers is:

A. 180 degrees
B. 90 degrees
C. 0 degrees
D. 270 degrees

49. In a transistor ……………….

A. IC = IE + IB
B. IB = IC + IE
C. IE = IC – IB
D. IE = IC + IB

50. As the temperature of a transistor goes up, the base-emitter resistance ……………

A. Decreases
B. increases
C. remain the same
D. None of the above

51. A collector characteristic curve is a graph showing ……….

A. 0.99 emitter current (IE) versus collector-emitter voltage (VCE) with (VBB) base
biasvoltage held constant
B. collector current (IC) versus collector-emitter voltage (VCE) with (VBB) base bias
voltageheld constant
C. collector current (IC) versus collector-emitter voltage (VC) with (VBB) base bias
voltageheld constant
D. collector current (IC) versus collector-emitter voltage (VCC) with (VBB) base bias
voltageheld constant
 E. Often a common-collector will be the last stage before the load; the main
function(s) of thisstage is to ………provide phase inversion
F. provide a high-frequency path to improve the frequency response
G. buffer the voltage amplifiers from the low-resistance load and provide
impedancematching for maximum power transfer
H. provide voltage gain

52. When a silicon diode is forward biased, what is VBE for a C-E configuration?

A. voltage-divider bias
B. 0.4 V
C. 0.7 V
D. emitter voltage

53. In a C-E configuration, an emitter resistor is used for:

A. Stabilization
B. Ac signal bypass
C. Collector bias
D. Higher gain.
54. In a common emitter transistor amplifier β=100,input resistance R1=1k and output resistance
10K.find the voltage gain
A. 100
B. 1000
C. 5000
D. 10
55. In the following circuit, Tr1 and Tr2 are identical transistors having VBE = 0.7 V. The
current passing through the transistor Tr2 is

A. 40MA
B. 20MA
C. 43MA
D. 45MA
56. For the transistor shown in the figure, assume V BE is 0.7 and βdc is100 . If vin 5V,V(out
Volts) is . (Give your answer upto one decimal place)

A. 5.7 V
B. 10 V
C. 20 V
D. 1V

57. If Vcc=18v, voltage divider circuit,R1=4.7 k & R2=1500 k ,find the base bias voltage.
A. 8.70 v
B. 4.35 v
C. 2.90 v
D. None of the above

58. refer to this figure. The dc voltage on the collector, VC, is

A. -5.4 V
B. 6.6 V
C. 12 V
D. 0V
59. The gain band width product, thermal stability and the relation between input and outputof
FET compared to BJT is respectively
A. High, low linear
B. Low, low, non-linear
C. Low, high, linear
D. Low, high, nonlinear
60. FET is a…….
A. Current and voltage controlled
B. Voltage controlled
C. Power controlled
D. Current controlled
61. The input impedance of a MOSFET is of the order of ………..
A. Ω
B. a few hundred Ω
C. kΩ
D. several MΩ
62. The n-channel JFET,the pinch off voltage is
A. Not greater than 0
B. Greater than 0 and equal to1
C. Lesser than 0 and equal to 1
D. All the above.
63. Find the transconductance when applied gate to source voltage is -2v…
A. 10 OHMS
B. 10 MOHMS
C. 40 OHMS
D. 25 OHMS
64. Which of the following is false for a CS amplifier without a bypass capacitor comparedto
a CS amplifier with a bypass capacitor?
A. Voltage gain magnitude decreases.
B. Input resistance remains same
C. Output resistance decreases
D. 180 phases between input and output.
65. Refer to this figure. Find the value of VD.

A. 20 V
B. 11 V
C. 10 V
D. 9V

66. Referring to this figure, calculate Av if rd = 19 k .

A. -2.85

B. -3.26

C. -2.95

D. -3.21
 67. For what value of ID is gm equal to 0.5 gm0?

A. 0 ma

B. 0.25 Idss

C. 0.5 Idss

D. Idss
68. What is the typical value for the input impedance Zi for JFETs?
A. 100K OHM
B. M OHM
C. 10 M OHM
D. 1000 M OHM
69. What is (are) the function(s) of the coupling capacitors C1 and C2 in an FET circuit?
A. To create an open circuit for dc analysis.
B. To isolate dc biasing arrangement from the applied signal & load.
C. To create a short circuit equivalent for ac analysis.
D. All the above.

71. Determine the transconductance of a JFET if its amplification factor is 96 & drain resistance is
326 ohms
A.2.66 MS
B.1.26 MS
C.5 MS
D.1 MS
72. When JFET is in cutoff, depletion layers are
A. far away

B. close together

C. Touching

D. Conducting
73. Which of the following device is revolutionized in computer industry
A. JFET
B. MOSFET
C. E-MOSFET
D. POWER FET
74. The noise level in FET is
A. More than bjt.
B. Neglisible small.
C. Slightly less than bjt.
D. None of the above.
75. Junction Field Effect Transistors (JFET) contain how many diodes?

A. 4
B. 3
C. 2
D. 1

76. A JFET is also called .......................transistor

A. unipolar
B. bipolar
C. uni junction
D. none of the above

77. In an n-channel JFET, what will happen at the pinch-off voltage?r

A. the value of VDS at which further increases in VDS will cause no further increase in
ID
B. the value of VGS at which further decreases in VGS will cause no further increases in
ID
C. the value of VDG at which further decreases in VDG will cause no further increases
in ID
D. the value of VDS at which further increases in VGS will cause no further increases in
ID
78. Using voltage-divider biasing, what is the voltage at the gate VGS?

5.2 V
A.
4.2 V
B.
3.2 V
C.
2.2 V
D.
79. When VGS = 0 V, a JFET is:

A. saturated
B. an analog device
C. an open switch
D. cut off
80. A JFET has ............. power gain

A. small
B. very high
C. very small
D. none of the above

81. The pinch-off voltage of a JFET is about ……….

A. 5V
B. 0.6 V
C. 15 V
D. 25 V
82. The transconductance of FET depends upon

A. Drain supply
B. The type of FET
C. Gate to source voltage
D. Gate current

83. FET is a...........controlled device whereas a bipolar transistor is a. .......controlled device.

A. Current, voltage
B. Drain, gate
C. Gate, drain
D. Voltage, current

84. When an input delta of 2 V produces a transconductance of 1.5 mS, what is the drain
currentdelta?

A. 666 mA
B. 3 mA
C. 0.75 mA
D. 0.5 mA

85. A "U" shaped, opposite-polarity material built near a JFET-channel center is called the:

A. Gate
B. Block
C. Drain
D. Heat sink
86. In the constant-current region, how will the IDS change in an n-channel JFET?
A. as VGS decreases ID decreases.
B. as VGS increases ID increases.
C. as VGS decreases ID remains constant.
D. as VGS increases ID remains constant.
87. With a JFET, a ratio of output current change against an input voltage change is called:
A. transconductance
B. siemens
C. gain
D. resistivity
88. What is the transconductance of an FET when ID = 1 mA and VGS = 1 V?

A. 1 kS
B. 1 mS
C. 1k
D. 1m
89. A JFET amplifier provides a voltage gain of less than one.

A. common-source
B. common-gate
 C. common-gate
D. cascade amplifier

90. One advantage of voltage-divider bias is that the dependency of drain current, ID,
on therange of Q points is .

A. reduced
B. increased
C. not affected
D. none of the above

91. To get a negative gate-source voltage in a self-biased JFET circuit, you must use a
..

A. negative gate supply voltage

B. ground
C. voltage divider
D. source resistor
92. This is an example of the output swing for a class amplifier.

A. A.
B. B.
C. AB
D. C
93. In class B operation, at what fraction of VCC should the level of VL(p) be to achieve
themaximum power dissipated by the output transistor?

A.0.5
B. 0.636
C.0.707
D.1
94. Which of the following is (are) power amplifiers?
A. Class A
B. Class B or AB
C. Class C or D
D. All of the above