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DEE20023 Chapter 3 (A) BIPOLAR JUNCTION TRANSISTOR SESI II 20222023

This document discusses the bipolar junction transistor (BJT). It contains 3 key points: 1. It describes the basic structure and operation of the BJT, which contains 3 doped semiconductor regions (emitter, base, collector) separated by 2 PN junctions. Current flows from emitter to collector when the base-emitter junction is forward biased. 2. It explains the characteristics and operating regions (active, saturation, cut-off) of the BJT and how biasing the junctions affects current and voltage. 3. It provides examples of applying BJT principles to different transistor configurations (common-base, common-emitter), calculating currents, voltages, and beta based on

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Muhd Zarif
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35 views21 pages

DEE20023 Chapter 3 (A) BIPOLAR JUNCTION TRANSISTOR SESI II 20222023

This document discusses the bipolar junction transistor (BJT). It contains 3 key points: 1. It describes the basic structure and operation of the BJT, which contains 3 doped semiconductor regions (emitter, base, collector) separated by 2 PN junctions. Current flows from emitter to collector when the base-emitter junction is forward biased. 2. It explains the characteristics and operating regions (active, saturation, cut-off) of the BJT and how biasing the junctions affects current and voltage. 3. It provides examples of applying BJT principles to different transistor configurations (common-base, common-emitter), calculating currents, voltages, and beta based on

Uploaded by

Muhd Zarif
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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BIPOLAR

JUNCTION
TRANSISTOR (BJT)
Learning outcomes
3.1 Remember basic of bipolar junction transistor (BJT)

3.2 Understand characteristics and operations of BJT

3.3 Apply principle and operations of BJT to the basic transistor


configurations
• INTRODUCTION
• Bipolar junction transistor (BJT) has three doped
semiconductor regions separated by two p-n
junction.

3.1 BASIC OF • The three regions are called emitter (E), base (B)
BIPOLAR and collector (C).

JUNCTION • Transistor can be either PNP or NPN type.

TRANSISTOR • The base region is lightly doped and very thin


compared to the highly doped emitter and
(BJT) moderately doped collector region.

• Current does not flow in through the emitter and


collector unless there is voltage bias applied to the
base.
2.0 PHYSICAL STRUCTURE AND SCHEMATIC DIAGRAM OF TRANSISTOR

NPN PNP
PHYSICAL
STRUCTUR
N P N P N P
E E C E C
B B

SCHEMATI
C SYMBOL
• BASIC TRANSISTOR OPERATION
• The emitter in NPN device is made of N-Type material, where the
majority carriers are electrons.
• When the base-emitter junction is forward biased, the electron
move from the n-type region towards the p-type region, and the
•
holes move towards the n-type region.
• When they reach each other, they combine and enabling a current
IE IC IE = IC + IB
to flow across the junction.

IB
• When a current flows between base and emitter, electron leave the
emitter and flow into the base.
• Normally the electrons would combine when they reach this area.
However, the doping level in this region is very low and base is also
very thin. This means, the most of the electrons are able to travel
across this region without recombining with the holes.
• As a result, the electrons migrate towards the collector, because
they are attracted by the positive potential.
BIASING TECHNIQUE
i. Emitter-Base : Forward Biased
To operate the transistor
properly, the two pn junctions
ii. Collector Base : Reverse Biased
must be correctly biased with
external dc voltage :
3.2 CHARACTERISTICS 5.0 CHARACTERISTIC CURVE OF BJT
AND OPERATIONS OF BJT.

OPERATING REGION OF BJT

i. Active Region
ii. Saturation Region
iii. Cut-off Region
Active Region
• Most importance region, e.g. for amplifier operation.
• The region where current curves are practically flat.
• Large signal gain, small signal distortion.

Saturation Region
• Equivalent to ‘on’ state when BJT is used as a switch (closed
switch).
• High current flow, low voltage.

Cut-off region
• Current reduced to zero
• Equivalent to an ‘OFF’ switch when BJT is used as a switch
(open switch).
• Low current flow, high voltage.
Current and voltage analysis

• IB: dc base current


• IE: dc emitter current
• IC: dc collector current
• VBE: dc voltage across base-emitter junction
• VCB: dc voltage across collector-base junction
• VCE: dc voltage from collector to emitter
3.3 APPLY THE PRINCIPLE AND OPERATIONS OF BJT TO THE BASIC TRANSISTOR CONFIGURATIONS.
Example (Common-Base BJT) :

1. VEE for common base transistor in figure 1 is changing from 10V to


40V. Calculate the IE and VCB at the both condition of VEE. Assume
VBE=0.
Solution :
Example (Common-Base BJT) : 2. Refer to figure 2, if VBE = 0.7, calculate IE, IC and VCB.

Solution :
Example (Common-Base BJT) :

3. A 0.98mA collector current flow through a common-base transistor when


emitter current is 1mA. Then, the emitter current was change to 1.05mA,
while the collector current is 1.028mA. Calculate the αa.t and αa.u.

Solution :
Example (Common-Base BJT) :

4. Refer to figure 3, calculate the VCB if we use a silicon transistor


and IC is 98% of IE.

Solution :
Example (Common-Base BJT) :

5. Refer to figure 4, when VBE = 0.7 and IC = IE,


Calculate the RL to get VCB = 10V

Solution :
Example (Common - Emitter) :

1. Refer to figure below, calculate IB, IC


and VC. Assume β = 100 and VBE=0.7.

VCC

Solution :
VBB
Example (Common - Emitter) :

2. Refer to the figure below, if Beta factor of the silicon transistor is 120, calculate the IC
and VC.
Example (Common - Emitter) :

3. Base on figure below, neglecting VBE . β = 50 calculate :


i). Base current (IB) ii). Collector current (IC) iii). Collector voltage (VCE)
Example (Common - Emitter) :

4. A 20μA base current flows through an emmiter-base transistor, with collector


current become 2mA. After that,the base current was changing to 40μA, while the collector
current also changing to 4mA. Calculate the βa.t and βa.u.

Solution :

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