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Analog Circuits Unit 1 Objective Questions

The document provides an overview of the syllabus for a course on single-stage MOS and BJT amplifiers. The syllabus covers the basic configurations of single-stage MOS and BJT amplifiers, their characterization, and high frequency response. It also discusses the common source MOS amplifier and common emitter BJT amplifier in detail, including their low frequency modeling and design. The document contains examples and questions to test the understanding of key concepts covered in the syllabus.

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Ravi
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0% found this document useful (0 votes)
62 views

Analog Circuits Unit 1 Objective Questions

The document provides an overview of the syllabus for a course on single-stage MOS and BJT amplifiers. The syllabus covers the basic configurations of single-stage MOS and BJT amplifiers, their characterization, and high frequency response. It also discusses the common source MOS amplifier and common emitter BJT amplifier in detail, including their low frequency modeling and design. The document contains examples and questions to test the understanding of key concepts covered in the syllabus.

Uploaded by

Ravi
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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UNIT-I

SINGLE – STAGE MOS and BJT AMPLIFIERS

Learning Outcomes

Upon successful completion of the course, the students will be able to


CO1: Analyze and characterize the MOS and BJT single stage amplifiers at low
and high frequencies.

Syllabus:
UNIT- I: Single-Stage MOS and BJT Amplifiers

Single-Stage MOS amplifiers: Three basic configurations, Characterizing Amplifiers,


The common-source (CS) amplifier.
Single-Stage BJT amplifiers: Basic Structure, The common-Emitter (CE) amplifier.

High Frequency response: General considerations, High-frequency response of CS


and CE amplifier.

1.1 Three basic Configurations

1. In an amplifier, any increase in ac voltage, current, or power is the result of a


transfer of energy from the [BL2]
a) resistor b) applied dc supply
c) ground d) None of the above

2. When performing DC analysis in a circuit make capacitors in the circuit


______________ [BL2]
a) short circuit b) open circuit
c) input side short and output side open d) None of the above

3. The basic relationship between Input and output currents of a BJT in Common
Emitter configuration is [BL2]

a) IE = γIB
b) Ic = αIE
c) Ic = βIB
d) IE = βIB

4. The operating or quiescent point is to be fixed at the _____________ of the BJT


output characteristics. [BL1]

a) cut-off region
b) Saturation region
c) origin
d) Center of the active region

5. The operating or quiescent point is to be fixed at the _____________ of the MOSFET


output characteristics. [BL1]
 
a) cut-off region
b) Saturation region
c) origin
d) Maximum supply voltage on the x-axis

6. The relationship between small signal base resistance (rπ) and emitter resistance (re)
is given by [BL2]

a) rπ = (β + 1) re
b) re = (β + 1) rπ
c) rπ = (ib / ie ) re
d) No relation between the two

7. The MOSFET in the following circuit is in which configuration [BL2]

a) Common source b) Common Drain


c) Common gate d) None of the mentioned

1.2 MOS Amplifiers - The basic structure

1. In a common source amplifier ______ terminal acts as output [BL2]


a) Source b) Gate c) Drain d) None of the above

2. The other name for constant current biasing circuit is ______ [BL1]
a) Current mirror b) Current control
b) Current matching c) Current amplifier

3. The common-source (CS) amplifier for MOSFET is the analogue of the ___________
amplifier for BJT. [BL2]

a) Common Base b) Common Collector


c) common emitter d) All of these
4. In which of the following configuration does a MOSFET works as an amplifier
[BL1]

a) Common Source b) Common Gate


c) Common drain d) All of the mentioned

1.3 Characterizing amplifiers

1. Which of the following is true in case of unilateral amplifiers [BL2]

a) Input resistance doesn’t depend on RL


b) Output resistance doesn’t depend on Rsig
c) Both a & b d) None of the above.
2. All practical amplifiers are [BL1]
a) Unilateral b) Non-unilateral
c) May be sometimes unilateral d) None

3. Identify the circuit shown in Figure below: [BL1]

a) MOSFET current control b) MOSFET Current amplifier


c) MOSFET Current mirror d) none of the above

1.4 Low - frequency response of common source (CS) amplifier:


1. Identify the circuit shown below: [BL1]

a) Small signal equivalent circuit of MOSFET considering Early effect


b) Small signal equivalent circuit of BJT
c) Small signal equivalent circuit of MOSFET
d) Small signal equivalent circuit of BJT considering Early effect
2. In the analysis of a MOSFET amplifier circuit, transistor can be replaced by
------------ [BL2]
a) Ideal diode b) Practical diode
c) Equivalent model d) Resistor
3. In the analysis of a MOSFET amplifier circuit, ideal constant DC voltage sources
are replaced by ___________, and ideal constant DC current sources are replaced
by an_________ in the small signal model.

a) Short circuit, Open Circuit [BL2]


b) Open Circuit, Short circuit
c) Short circuit, Short circuit
d) Open Circuit, Open Circuit
4. When the MOSFET operating under saturation region, the simplified small
signal model indicates that the drain current in saturation ---------------- of the
drain voltage. [BL2]
a) dependent b) Independent
c) directly proportional d) inversely proportional

5. The purpose of introducing Source resistance in MOSFET is to _____


a) To improve current gain b) To improve bias stability [BL2]
c) To improve voltage gain b) All of these
6. Which of the small signal model is suitable for representing CS amplifier with
source resistance? [BL2]
a) Hybrid – π model b) T – equivalent model
c) High-frequency model d) All of these

7. In the MOSFET amplifier of the Figure, the signal output V1 and V2 obey the
relationship. [BL4]

a) V1 = V2 / 2 (b) V1 = - V2 / 2
c) V1 = 2 V2 (d) V1 = -2 V2

1.5 Design of Common Source (CS) amplifier at low frequencies


1. One of the rule of thumbs used to calculate Source resistance of MOS CS amplifier
is _______ [BL2]
a) Vs = 0.1 Vdd b) Vs = 0.2 Vdd c) Vs = 0.5 Vdd d) Vs = Vdd

2. The relation between lower cut-off frequency and output coupling capacitor is given
by ______
a) fL = 1 / [2π (RG + RL)C2] b) fL = 1 / [2π (RS + RL)C2]
c) fL = 1 / [2π (RD + RS) C2] d) fL = 1 / [2π(RD + RL)C2]

3. The voltage gain of the CE of amplifier is related with transconductance using which
of the following relation
[BL1]
a) Av = - gm / Rc
b) Av = - 1 / gm * Rc
c) Av = - gm Rc
d) No relation between the two

1.6 BJT amplifiers - the basic structure


1. The major advantage CE amplifier over other configurations of BJT amplifiers is
_________ [BL2]
a) High voltage gain b) High current gain c) High power gain
d) High output resistance

2. Which of the following configurations produces phase shift in the output waveforms
________ [BL1]
a) Common Collector b) Common Emitter c) Common Collector
d) All of these

1.7 Characterizing amplifiers


1. The amplifier works as a linear system for ……….. [BL1]

a) High frequency signals b) Low frequency signals


c) Small signals d) large signals

2. Which of the following is true in case of unilateral amplifiers [BL2]

a) Input resistance doesn’t depend on RL


b) Output resistance doesn’t depend on Rsig
c) Both a & b
d) None of the above.

1.8 Low – frequency response of the common emitter (CE) amplifier

1. The phase difference between the output and input voltages of a CE amplifier is
……………….. [BL1]
a) 180o b) 0o c) 90o d) 270o
2. The purpose of capacitors in a transistor amplifier is to ………… [BL2]
a) Protect the transistor c) Cool the transistor
b) Couple or bypass a.c. component d)Provide biasing
3. If the input capacitor of a transistor amplifier is short-circuited, then………
[BL1]
a) Transistor will be destroyed
b) Biasing conditions will change
c) Signal will not reach the base
d) None of the above
4. The amplifier works as a linear system for ……….. [BL1]
a) High frequency signals c) Low frequency signals
b) Small signals d) large signals

5. A small signal source Vi (t) = (A cos 20t +B sin 10 t) is applied to a transistor


amplifier as shown below. The transistor has β = 150 and hie= 3Ω. Which
expression best approximate V0(t)? [BL3]

(A) V0(t) = 1500(A cos 20t+ B sin 10 t)


(B) V0(t) =1500(A cos 20t + B sin 10 t)
(C) V0(t) = 1500 B sin 10 t
(D) V0(t)= 150 B sin 10 t

6. The variation in collector current due to change in Collector-Emitter voltage is


called [BL2]

a) Piezo-electric effect
b) Miller Effect
c) Zener Effect
d) Early effect

7. Let A1 be a common-emitter amplifier with the resistance R E completely bypassed.


Let A2 be a common-emitter amplifier with R E=RE1 + RE2 where only RE2 is bypassed.
The resistance RE of A1 is equal to RE1+ RE2 in A2. All other parameters are identical in
A1 and A2. Which of the following statements is true?
[BL4]

a) A1 allows a larger input voltage amplitude without causing distortion in the


output voltage.
b) A2 has a larger input resistance
c) A2 has a larger d.c bias current (IC)
d) A1 has a smaller voltage gain.

8. The amplifier circuit shown below uses a silicon transistor. The capacitors CC and
CE can be assumed to be short at signal frequency and effect of output Resistance r0
can be ignored. If CE is disconnected from the circuit, which one of the following
statements is true? [BL3]

(A) The input resistance Ri increases and magnitude of voltage gain AV decreases
(B) The input resistance Ri decreases and magnitude of voltage gain AV increases
(C) Both input resistance Ri and magnitude of voltage gain AV decreases
(D) Both input resistance Ri and the magnitude of voltage gain AV increases

1.9 High Frequency Response Single Stage Amplifier

Introduction:

1. Which of the following is not the regions of operation of MOSFET ___________

a) Cut-off [BL2]
b) Saturation

c) Pinch-off

d) Triode

2. MOSFET acts as an Amplifier in which region of operation ________________

a) Cut-off [BL2]
b) Saturation
c) Pinch-off
d) Triode

3. Transconductance is given as the ratio of [BL1]

a) Output current to input voltage b) output current to output voltage c)


input current to output voltage d) input voltage to output current

4. NMOS Transistors are preferred over PMOS because ________ [BL2]

5. Write down the condition for triode region ________________ [BL1]

6. Gain drops at low frequencies due to ------------------- and at high frequencies due to
-------------------------. [BL2]

7. How many junction capacitances are there in MOSFET [BL1]

a) One b) two c) three d) Zero


8. Current gain of CB, CG amplifiers is [BL1]

a) Unity b) Zero c) Infinity d) none of the above

9. Voltage gain of CC, CD amplifiers is [BL1]

a) Unity b) Zero c) Infinity d) none of the above

1.10 HIGH FREQUENCY RESPONSE : GENERAL CONSIDERATION


1. Ideal value of output resistance (r0) is [BL1]

a) unity b) Zero c) infinity d) very high


2. The Voltage levels of an Enhancement MOS transistor under Cut-off, non-saturated
and saturated modes is given by [BL2]

a) Vgs<Vt, Vds<Vgs-Vt, Vds>Vgs-Vt


b) Vgs>Vt, Vds>Vgs-Vt, Vds>Vgs-Vt
a) Vgs>Vt, Vds>Vgs-Vt, Vds=Vgs-Vt
d) Vgs=Vt, Vds<Vgs-Vt, Vds>Vgs-Vt

3. The unity gain frequency of a MOSFET is [BL1]

a) Directly proportional to gm c) Independent of gm


b) Inversely Proportional to gm d) None of the above
4. Identify the right expression for unity gain frequency [BL1]

a)

b)

c)

d)

5. A __________ is said to be existing if the lowest frequency pole is at least two octaves
( a factor of 4) lowest from nearest pole or zero.
[BL1]
a) Dominant pole b) Weaker pole

c) Dominant zero d) Weaker zero

6. Considering the capacitances in the high-frequency equivalent circuit one at a time


while reducing all other capacitors to zero is called _________ [BL1]

a) Dominant pole approach b) Open circuit time constant


c) Miller’s theorem approach d) Exact analysis

1.11 MILLERS THEORM:

1. According to __________ theorem, an impedance Z connected between input and


output ports can be replaced by two impedances: Z1 connected between input and
ground and Z2 connected between output and ground
[BL1]

a) Stoke’s b) Miller’s c) Green’s d) Einstein’s

2. Miller equivalent circuit cannot be used directly to determine


the __________ of an amplifier [BL2]

a) Input resistance b) Input capacitance

c) Output resistance d) Output capacitance

3. Under DC Analysis capacitors acts as. [BL1]

a) Short circuit b) Open circuit c) unity d) none of the above

4. Under AC Analysis Capacitors acts as [BL1]

a) Short circuit b) Open circuit c) unity d) none of the above

1.12 HIGH-FREQUENCY RESPONSE OF THE CS AND CE AMPLIFIERS

1. The below figure shows:

a) High frequency equivalent of CE amplifier [BL1]


b) Hybrid – π equivalent of CE amplifier
c) High frequency equivalent of CS amplifier
d) Hybrid – π equivalent of CS amplifier

2. The load capacitance CL in a high frequency equivalent circuit represents [BL1]


a) the drain-to-body capacitance Cdb (collector-to-substrate capacitance)

b) the input capacitance of a succeeding amplifier stage


c) a deliberately introduced capacitance
d) sum of the above three components

3. A MOS transistor can be used as an ____________ [BL2]

4. In MOS transistor the current flowing in between Source to Drain (Ids) given as
________ [BL1]
5. In a MOS transistor when Vds > Vgs - Vt causes _________ effect. [BL1]

6. In situations when Rsig is relatively _______ and CL is relatively ________, Miller's


theorem can be used to obtain approximate estimate of the 3-dB frequency f H. [BL2]
a) large , small b) small, large
c) small, small d) large, large
7. In the case of method of open circuit time constant, the upper cut-off frequency is
calculated by __________ [BL2]

a) Highest value of time constant

b) Summation of individual time constants

c) any random value from various time constants

d) Smallest value of time constant

8. BJT in ___________ configuration is used as current buffer and in ___________


configuration is used as voltage buffer. [BL2]

9. For CS Amplifier the mid band gain (Am) is given as _________ [BL1]

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