BASICS OF ELECTRICAL AND ELECTRONICS

ENGINEERING

MODULE – 4 PART – 3

BIPOLAR JUNCTION TRANSISTORS

Ms. Neethu Radha Gopan, Asst Professor, Dept. of ECE, RSET

Syllabus
Bipolar Junction Transistor (BJT)

➢ Active device
➢ Three terminal- Emitter, Base, Collector

➢ Current flow from low resistance path to high resistance path

➢ Transistor: Transfer of resistance (Transfer + Resistor).

➢ Current conduction is due to two charge carriers- Electrons and Holes.

➢Two Junctions: Emitter – Base Junction & Collector – Base Junction
Emitter
➢ Supply (Emit) charge carriers to other regions
➢ Heavily doped region
➢ Size: Larger than base & smaller than collector
Base
➢ Middle region forms two PN junctions
➢ Lightly doped region
➢ Size: Thin
➢ It controls the flow of charge carriers from emitter to collector.
Collector
Collect the charge carriers
Intermediate doping between emitter and base
Size: Larger than emitter and base
 Different Types of BJT

NPN PNP
Two N regions separated by a P region Two P regions separated by an N region

Symbol Symbol
Transistor Biasing & Operation Modes
➢ The process of applying external voltage to an electronic device/ system to establish
suitable working condition is known as Biasing.
➢ Two PN junctions
➢ Each of them may be Forward Biased or Reverse Biased
Emitter Base Collector Base
Region of Operation Application
Junction Junction
Reverse Biased Reverse Biased Cut off/OFF
Switch
Forward Biased Forward Biased Saturation/ON
Forward Biased Reverse Biased Active Amplifier
Reverse Biased Forward Biased Inverse Active Rarely used
Working of npn Transistor
➢ EB is forward biased (Low resistance) and CB is reverse biased (High resistance)
➢ Electrons in the n -type emitter are repelled into the base by the negative terminal
of the emitter supply.
➢ Since the base is very thin and lightly doped, only a few electrons combine with
holes in the base.
➢ The small current flowing out of the base lead (which is the base current, IB ) is
called recombination current.
➢ Most of the emitter-injected electrons pass through the base region and into the
collector region.
➢ The reason is twofold. First, only a few holes are available for recombination in
the base.
➢ Second, the positive collector-base voltage attracts the free electrons in the p -
type base over to the collector side before they can recombine with holes in the
base.
➢ In most transistors, the collector current, IC , is nearly identical to the emitter
current, IE, as the recombination current, IB , since is very small
𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶
Transistor Configurations

➢ When Transistor is connected in a circuit

1. One terminal used as input
2. Another used as output
3. Third terminal made common to both input and output
➢ Depending on the common terminal
1. Common Base Configuration (CB)
2. Common Emitter Configuration (CE)
3. Common Collector Configuration (CC)
Common Base (CB) Configuration

𝑂𝑢𝑡𝑝𝑢𝑡 𝐶𝑢𝑟𝑟𝑒𝑛𝑡
➢ 𝐶𝑢𝑟𝑟𝑒𝑛𝑡 𝐺𝑎𝑖𝑛 =
𝐼𝑛𝑝𝑢𝑡 𝐶𝑢𝑟𝑟𝑒𝑛𝑡
𝐼𝐶
➢ In CB, 𝐶𝑢𝑟𝑟𝑒𝑛𝑡 𝐺𝑎𝑖𝑛, 𝛼 =
𝐼𝐸
𝐼𝐶
➢ 𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶 but 𝐼𝐵 is very small therefore, 𝐼𝐸 approx. = 𝐼𝐶 , ≈1
𝐼𝐸
➢ 𝛼 range 0.9 to 0.99
Common Emitter (CE) Configuration

𝐼𝐶
➢ In CE, 𝐶𝑢𝑟𝑟𝑒𝑛𝑡 𝐺𝑎𝑖𝑛, 𝛽 =
𝐼𝐵
➢ 𝐼𝐶 is high and 𝐼𝐵 is very small therefore, 𝛽 ranges from 100 to 200
 Common Collector (CC) Configuration

𝐼𝐸
➢ In CC, 𝐶𝑢𝑟𝑟𝑒𝑛𝑡 𝐺𝑎𝑖𝑛, 𝛾 =
𝐼𝐵
 Relationship Between 𝜶, 𝜷 & 𝜸

𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶 𝐼𝐶 /𝐼𝐸 𝛼
𝛽 = =
𝐼𝐶 𝐼𝐶 𝐼𝐸 𝐼𝐸 − 𝐼𝐶 1−𝛼
𝛼 = , 𝛽= , 𝛾= 𝐼𝐸
𝐼𝐸 𝐼𝐵 𝐼𝐵
𝐼𝐶 𝐼𝐶 𝐼𝐸 𝐼𝐵 + 𝐼𝐶
𝛼 = = , [𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶 ] 𝑊𝑒 ℎ𝑎𝑣𝑒 𝛾 = = , [𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶 ]
𝐼𝐸 𝐼𝐵 + 𝐼𝐶 𝐼𝐵 𝐼𝐵
Divide numerator and denominator by 𝐼𝐵 , (𝐷𝑖𝑣𝑖𝑑𝑒 𝑛𝑢𝑚𝑒𝑟𝑎𝑡𝑜𝑟 𝑎𝑛𝑑 𝑑𝑒𝑛𝑜𝑚𝑖𝑛𝑎𝑡𝑜𝑟 𝑏𝑦 𝐼𝐵
𝐼𝐶
𝐼𝐶 /𝐼𝐵 𝛽 𝛾 = 1+ = 1+𝛽
𝛼 = = 𝐼𝐵
𝐼𝐵 + 𝐼𝐶 1+𝛽 𝐼𝐸 𝐼𝐸
𝐼𝐵 𝑆𝑖𝑚𝑖𝑙𝑎𝑟𝑙𝑦, 𝛾 = = , [𝐼𝐵 = 𝐼𝐸 − 𝐼𝐶 ]
𝐼𝐵 𝐼𝐸−𝐼𝐶

𝑆𝑖𝑚𝑖𝑙𝑎𝑟𝑙𝑦, 𝛽 =
𝐼𝐶
=
𝐼𝐶
, [𝐼𝐵 = 𝐼𝐸 − 𝐼𝐶 ] Divide numerator and denominator by 𝐼𝐸 ,
− 𝐼𝐶
𝐼𝐵 𝐼𝐸
𝐼𝐸 /𝐼𝐸 1
Divide numerator and denominator by 𝐼𝐸 , 𝛾= =
𝐼𝐸 /𝐼𝐸 − 𝐼𝑐 /𝐼𝐸 1 − 𝛼
Q. A transistor has the following currents: 𝑰𝑬 = 15 mA,
𝑰𝑩 =60𝝁𝑨 . Calculate 𝜶, 𝜷 𝒂𝒏𝒅 𝜸 .

Soln:
𝐼𝐸 15 × 10−3
𝛾= = −6
= 250
𝐼𝐵 60 × 10
𝛾 = 1+𝛽
𝛽 = 𝛾 − 1 = 249

𝛽 249
𝛼 = = = 0.996
1 + 𝛽 250
 Input and Output Characteristics of CE Configuration

Input Characteristics of CE Configuration

➢ Input Characteristics- Curve obtained by
plotting a graph using input parameters
VBE on X- axis & IB on Y- axis with output
voltage VCE kept constant.
➢ When output voltage (VCE) is at zero volts and
emitter-base junction is forward biased by input
voltage (VBE), the emitter-base junction acts like
a normal p-n junction diode. So the input
characteristics of the CE configuration is same as
that of a normal pn junction diode.
➢ With the increase in the reverse voltage (VCE) the
depletion layer at base-collector junction
widened.
➢ As a result, base width reduces→ recombination
of electron-holes at base decreases, hence IB
decreases.
➢ This process is known as Early effect or Base
width modulation.
➢ To maintain IB at the same value for increased
reverse voltage (VCE), VBE must be increased .
Output Characteristics of CE Configuration

➢ Output Characteristics- Curve obtained by plotting a graph

using output parameters VCE on X- axis & IC on Y- axis with
input current IB kept constant.

➢ Three regions of operation

➢ Cut off
➢ Active
➢ Saturation
Saturation Region (EB- forward bias, CB- forward bias)

➢ When 𝑉𝐶𝐸 is zero, 𝐼𝐶 is zero because the collector-base function is not reverse-
biased.
➢ Without a positive voltage at the collector, it cannot attract electrons from the base.
➢ When 𝑉𝐶𝐸 increases from zero, however, 𝐼𝐶 increases linearly.
➢ The vertical portion of the curves near the origin is called the saturation region.

Active Region (EB- forward bias, CB- reverse bias)

➢ In the active region, the collector current increases slightly as 𝑉𝐶𝐸 increases.
➢ In active region, collector current is 𝛽 times greater than the base current (𝐼𝐶 = 𝛽𝐼𝐵 )

Cut off Region (EB- reverse bias, CB- reverse bias)

➢ The 𝐼𝐵 = 0 curve nearest the horizontal axis is called the cutoff region because only
a small collector current, IC , flows (leakage current due to reverse bias).
END OF MODULE - 4 PART - 3

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