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IPD60R360P7

This document summarizes the specifications of an N-channel MOSFET transistor from INCHANGE Semiconductor. The transistor has a maximum static drain-source on-resistance of 0.36 ohms and is enhancement mode. It is rated for a maximum drain-source voltage of 600V, drain current of 9A continuous and 26A single pulsed, and total power dissipation of 41W. Key thermal characteristics include a maximum junction-to-case thermal resistance of 3.04°C/W and junction-to-ambient thermal resistance of 62°C/W.

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24 views2 pages

IPD60R360P7

This document summarizes the specifications of an N-channel MOSFET transistor from INCHANGE Semiconductor. The transistor has a maximum static drain-source on-resistance of 0.36 ohms and is enhancement mode. It is rated for a maximum drain-source voltage of 600V, drain current of 9A continuous and 26A single pulsed, and total power dissipation of 41W. Key thermal characteristics include a maximum junction-to-case thermal resistance of 3.04°C/W and junction-to-ambient thermal resistance of 62°C/W.

Uploaded by

DHARMENDER YADAV
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7

·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.36Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·DESCRITION
·Suitable for hard and soft switching

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 600 V

VGS Gate-Source Voltage ±20 V

ID Drain Current-Continuous 9 A

IDM Drain Current-Single Pulsed 26 A

PD Total Dissipation @TC=25℃ 41 W

Tj Max. Operating Junction Temperature 150 ℃

Tstg Storage Temperature -40~150 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Channel-to-case thermal resistance


Rth(j-c) 3.04 ℃/W

Channel-to-ambient thermal resistance


Rth(j-a) 62 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IPD60R360P7，IIPD60R360P7

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA 600 V

VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.14mA 3 4 V

RDS(on) Drain-Source On-Resistance VGS=10V; ID=2.7A 0.36 Ω

IGSS Gate-Source Leakage Current VGS=20V; VDS=0V 1 μA

IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V 1 μA

VSD Diode forward voltage IF=2.7A, VGS = 0V 0.9 V

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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