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11efs4 126

This document provides specifications for an 11EFS4 ultra-fast recovery diode. Some key specifications include: 1) It has a miniature size, low forward voltage drop, and high efficiency. 2) It can withstand peak reverse voltages from 200V to 400V and surge currents up to 30A. 3) Forward current and power dissipation ratings vary based on operating temperature and conduction angle. Thermal resistance also depends on mounting configuration.
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0% found this document useful (0 votes)
18 views5 pages

11efs4 126

This document provides specifications for an 11EFS4 ultra-fast recovery diode. Some key specifications include: 1) It has a miniature size, low forward voltage drop, and high efficiency. 2) It can withstand peak reverse voltages from 200V to 400V and surge currents up to 30A. 3) Forward current and power dissipation ratings vary based on operating temperature and conduction angle. Thermal resistance also depends on mounting configuration.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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FRD Type : 1 1 E FS4

OUTLINE DRAWING
FEATURES
* Miniature Size
* Ultra-Fast Recovery
* Low Forward Voltage Drop
* Low Power Loss, High Efficiency
* High Surge Capability
* 200 Volts through 400 Volts Types Available
* 26mm and 52mm Inside Tape Spacing

Maximum Ratings Approx Net Weight:0.17g

Rating Symbol 11EFS4 Unit


Repetitive Peak Reverse Voltage VRRM 400 V
Non-repetitive Peak Reverse Voltage VRSM 440 V

Average Rectified 0.8 Ta=30°C Without Fin ∗1 50Hz Half Sine


IO A
Output Current 1 Ta=24°C P.C.B.Mounted∗2 WaveResistive Load

RMS Forward Current IF(RMS) 1.57 A


Surge Forward Current IFSM 30 50Hz Half Sine Wave,1cycle,Non-repetitive A
Operating JunctionTemperature
Tjw - 40 to + 150 °C
Range
Storage Temperature Range Tstg - 40 to + 150 °C

Electrical • Thermal Characteristics


Characteristics Symbol Conditions Min Typ Max Unit
Peak Reverse Current IRM Tj= 25°C, VRM= VRRM - - 20 µA
Peak Forward Voltage VFM Tj= 25°C, IFM= 1 A - - 1.25 V
Reverse Recovery
trr IFM= 1 A, -di/dt= 50 A/µs, Ta= 25°C - - 30 ns
Time
Without Fin,PCB ∗1 140
Thermal Resistance Rth(j-a) Junction to Ambient - - °C/W
P.C.Board Mounted ∗2 110

∗1 Without Fin or P.C.Board

∗2 P.C. Board Mounted(L=3mm, Print Lands = 5x5 mm,Both Sides)


11EFS4 OUTLINE DRAWING (Dimensions in mm)
FORWARD CURRENT VS. VOLTAGE

11EFS4
INSTANTANEOUS FORWARD CURRENT (A) 10

2
Tj=25°C
Tj=150°C
1

0.5

0.2

0.1
0 0.4 0.8 1.2 1.6 2.0
INSTANTANEOUS FORWARD VOLTAGE (V)

0° 180°
θ
CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION

11EFS4
1.6
D.C.
AVERAGE FORWARD POWER DISSIPATION (W)

1.4

RECT 180°
1.2
HALF SINE WAVE
RECT 120°
1.0

RECT 60°
0.8

0.6

0.4

0.2

0
0 0.4 0.8 1.2 1.6
AVERAGE FORWARD CURRENT (A)
0° 180°
θ
CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
Without Fin or P.C. Board
11EFS4
1.4

1.2
AVERAGE FORWARD CURRENT (A)

D.C.

1.0 RECT 180°


RECT 120°
HALF SINE WAVE
0.8

RECT 60°
0.6

0.4

0.2

0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)

0° 180°
θ
CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
P.C. Board mounted (L=3mm,Print Land=5×5mm,Both Sides)
11EFS4
1.6

1.4 D.C.
AVERAGE FORWARD CURRENT (A)

1.2
RECT 180°
HALF SINE WAVE
1.0
RECT 120°

0.8
RECT 60°
0.6

0.4

0.2

0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
SURGE CURRENT RATINGS
f=50Hz,Half Sine Wave,Non-Repetitive,No Load
11EFS4
35

30
SURGE FORWARD CURRENT (A)

25

20

15

10

5 I FSM

0.02s
0
0.02 0.05 0.1 0.2 0.5 1 2
TIME (s)

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