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L10-MOSFET Transistor - MultiSim

This document describes an experiment measuring the characteristics of a MOSFET transistor. Key measurements were taken of the transistor's gate threshold voltage (VGS(th)), static drain-source resistance (RDS(on)), drain-source on-voltage (VDS(on)), and on-state drain current (ID(on)) by varying the gate-source voltage (VGS) in steps and recording the corresponding drain current (ID) and drain-source voltage (VDS). Calculations were shown to determine RDS(on) and the transistor's k coefficient based on the final measurement values. A second measurement was taken with a resistor between the drain and gate to determine the transistor's operating point.

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Jabarjung Singh
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23 views

L10-MOSFET Transistor - MultiSim

This document describes an experiment measuring the characteristics of a MOSFET transistor. Key measurements were taken of the transistor's gate threshold voltage (VGS(th)), static drain-source resistance (RDS(on)), drain-source on-voltage (VDS(on)), and on-state drain current (ID(on)) by varying the gate-source voltage (VGS) in steps and recording the corresponding drain current (ID) and drain-source voltage (VDS). Calculations were shown to determine RDS(on) and the transistor's k coefficient based on the final measurement values. A second measurement was taken with a resistor between the drain and gate to determine the transistor's operating point.

Uploaded by

Jabarjung Singh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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MOSFET characteristics ENGI27907

Deep Patel - 991662275


Lab 10 – MOSFETS CHARACTERISTICS
A MOSFET transistor (2N7000) has the following “ON CHARACTERISTICS”: Gate Threshold
Voltage VGS(th), Static Drain-Source On-Resistance RDS(on), Drain-Source On-Voltage VDS(on), On-
State Drain Current ID(on), Forward Transconductance gFS, and many other characteristics that we
will not explore in our time limited experiment. Note, that all above characteristics had been
measured under certain conditions (e.g. gate threshold voltage was measured with the following
setup conditions: VDS=VGS, ID=1mA). When experimenting with these devices in our lab, we do not
necessarily recreate (measure) under the very same conditions, hence our results would diverge
somewhat from the quoted values.
1) Consult the data sheet on 2N7000 MOSFET transistor to fill the table below with typical
(average) listed values.
2) Wire the circuit on Figure 1. Since you have one DMM meter in the lab per bench, the current
ID and voltage VDS needs to be measured sequentially.
3) Set the VGG to 0V. Slowly increase VGG in steps of 0.1V while observing the current ID. Initially
the ID current will be null. However, when VGG reaches VGS(th) the current will appear. We will
consider reaching VGS(th) when the current becomes around 1mA (it could be somewhat below
or above 1mA when you observe it).

4) Write the VGS(th) to the table, when current ID becomes around 1mA. Measure the
corresponding VDS and record into the table into the 3rd column.

5) For the next several measurements, you would keep increasing VGG in steps of 0.1V. For each
new value of VGG, you would measure the corresponding pairs of ID and VDS.

6) Take the measurements obtained in the last row of your table to find an experimental value of
RDS(on). The measured values from this last row would be considered as VGS(on), ID(on), VDS(on),
and RDS(on). Remember that RDS(on) is the resistance of the MOSFET transistor and can be
found by applying Ohms law across the transistor. Show the formula and calculations below:

RDS(on) = VDS(on) /ID(on) = 189.8mV/14.8mA = 13Ω


MOSFET characteristics ENGI27907

7) Use the obtained values from the last row to find the coefficient k for the MOSFET transistor,
corresponding to our measurement setup. Show the formula and calculations below:

k=

2N7000 VGS(th) RDS(on) VDS(on) ID(on) Maximum Drain Current - ID Maximum Power PD
Characteristics Continuous Dissipation
Data Sheets 2.1V 1.8Ω 0.14 600 200mA 400mW
V mA
Measured 2.1V 1.8Ω 190 14.8
mA mA

VGS [V] ID [mA] VDS [V]

VGS(th) =2.1V ~1mA 14V

VGS(th)+0.1V=2.2V 2.9mA 12.1V

VGS(th)+0.2V=2.3V 5.9mA 9.1V

VGS(th)+0.3V=2.4V 9.8mA 5.2V

VGS(th)+0.4V=2.5V 14.5mA 492mV

VGS(th)+0.5V=2.6V 14.7mA 313mV

VGS(th)+0.6V=2.7V 14.7mA 253mV

VGS(th)+0.7V=2.8V 14.8mA 216mV

Figure 1 VGS(th)+0.8V=2.9V 14.8mA 190mV

8) Disconnect the VGG from the MOSFET circuit. Insert the 10kΩ resistor between drain and gate
(see the Figure 2). Measure the ID and VDS.

Measured values: VGS = 2.5V VDS = 2.5V ID = 12.5mA


MOSFET characteristics ENGI27907

9) Using Graphmatica, solve for the Q-point values for Figure 2. Use the value of k coefficient
obtained in step 7. Transfer the graph onto the paper neatly labeling the axis, and showing the
coordinate values of the Q point. Write the equations for transistor’s ID current and biasing line
ID current that were used to plot the graphmatica graphs.

VGS = 2.8V

VDS = 2.8V

ID = 12.2mA

VGS = VG-VS = 15 – ID*RD

So 1st equation = ID = (15V – VGS) /1kΩ

Figure 2
2nd euation ID = 23.14(VGS – 2.1V)^2

Graphmatica values:
MOSFET characteristics ENGI27907

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