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40 viewsSemiconductor p4
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Navyasri NavyasriCopyright
© © All Rights Reserved
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/ 10
shown i
‘Therefore the wave form Y willbe as
the Fig
the
SWE an Drew lat tr
D4eBsdeBeY
W(44B)o(448)=¥
Sob. (The required agi gram othe BvD
Bookan expres gen in gre Hee he
input B before applying to frst AND gate and
input A before applying to second AND gate
‘have been inverted. The output ofthese gates
are, therefore, 4 and. 7p respectively
‘These outputs are fed to OR gate which gives
¥ = 4B + 4B sshownin figure,
logic diagram for the given
‘Boolean expression is shown in figure, The
‘pat Bo frst OR gate and input Ato second
(OR gate have been inverted.
Ba ‘
6 Mdentity ¢
cue
NSIC AND EXTRINg,,
INT EMICONDUCTORS .
roperty makes the ery,
1 wetoave sharp melting poinys
1) Equal strength ofall the interatomic bong,
2) anisotropic
3) ong range order
‘short range order
A strip of copper and anothe, "
germanium are cooled from.”
temperature to 80K. The resistance yr
1) cach of these decreases
2) copper strip decreases and tha of
decreases
3) copper strip decreases and tha: 4
jum increases
4) cach of these increases
3. The manifestation of band structure
solids is due to :
1) Heisenberg’s uncertainty principle
2) Pauli’s exclusive principle
3) Bohr’s correspondence Principia.
4) Boltzman’s law
4. A solid which is not transparent to visible
light and whose conductivity increases with
temperature is formed by:
ionic bonding 2) covalent bonding
3) vander Wall's bonding 4) metallic bonne
Toa germanium sample, traces of gallium
are added as an impurity. The resultant
Sample would behave like:
)Aconductor
>
he i a
th Property which is ™
eet fora semiconductor?
ini 'W temperatures, it behaves lit
at hig
canon Yemperatures two types of bil?
3) the, a Cause Conductivity
mee Catticrs are electrons and 0
4) the get band at higher temperatcs
"onductors electrically net her of
room
ce of:
that of
that of
“a
Ape relation between NuMber of free
jectrons (n) im a SeMIcONduetor and
fanperaure (1) Is given by
net DneT? 3) neVF 4 yg pM
is no hole current in conductors
16,
a the forbidden energy gap
jaween V-B. and CB, is of the order of
piv 2) SeV 3) TkeV 4) Mev.
‘The bond in semiconductors is iG
Govndiet: 2) ionic
3)metalic 4) hydrogen ik
{ semiconductor at 0 K behaves as ‘
jjeonductor 2) insulator
+)super conductor 4) extrinsic semiconductor | '%
Carbon, Silicon, and Germanium have four
valence electrons each. These are
characterised by valenee and conduction
bands separated by energy band gap
respectively equal to (£,).>(£,),,and
|£,),, Which of the following statement
20.
istrue?
(8), (Ede (Be a
ale). (6,),> (6),
1) (Ea)? (Exdos
22,
‘\may be positive or negative
#9 type semiconductor , the fermi
‘Srerey level lies
the forbidden energy gap nearer to the
‘the forbidden energy gap nearer tthe
y
the middle of forbidden energy £8
4) outside the forbidden energy gap
In extrinsic semiconductors
') the conduction band and valence band
overlap
2) the gap between conduction band and
valence band is near about L6eV
3) the gap between conduction band and
valence band is near about teV
4) The gap between conduction band and
valence band willbe 100eV and more
‘The element that can be used as acceptor
impurity to dope silicon is
1)Antimony 2) Arsenic
3) Boron
4) phosphorous
In intrinsic semiconductor at room
temperature the no. of electrons and holes are
Vequal 2)zero 3) unequal 4) infinite
Band gap in insulator is of the order
1)6eV — 2)0,60eV 3)-6eV 4)0eV 5
In an intrinsic semiconductor, the fermi ¢—~ ©
nergy level is t
1) nearer to valence band than conduction
band
2) equidistant from conduction band and
t=
et-
4) bisecting the conduction band
In intrinsic semiconductor is
Tylow —_2)average 3)high 4) very low
JUNCTION DIODE
‘The potential barrier at PN junction is due to
1) fixed acceptor and donor ions on either side
ofthe junction
2) minoritycarrers on either side ofthe junction
3) majority carriers on ether sie ofthe junction
4) both majority and minority carriers oneither
side of junction
‘A full wave reetifler along with the output
js shown in fig, the contributions from the
diode @)are
FIRE
Full Wave Rectifier
on=23 ve
2)AC 3)B,D 4)A,B,C,D
yc
‘23. If the imput frequency of half-wave
rectifier’
‘n Hzac, then its output is
T)aconstant de
2)n2 Hz pulsating de
3)nHz pulsating de
4) 2nHz pulsating de
24. Onincreasing reverse voltage in a p-n junction
‘Gode the value of reverse current will
1) gradually increases
2) first remains constant and then suddenly
4) gradually decrease
2. in ent bias the depletion layer
29
30.
31.
32.
33,
riersin different reyigy
ofcharwe Crcentrations of s
e cone Me type 01
py carriers in different region, Mea ‘a oe
Haband e 2) and b only 3) uneb
a)onlyd A)abood esis
‘The depletion region is tap
1) region of opposite charges: 35 the phe
2) neutral region monoc’
3) region of infinite energy 1) The!
4) region of free current carriers by The!
Germanium diode 3) The!
Ty may be used as rectifier Because it of, 4) The
relatively low resistance for forward bias yy 36. 10 aP-
very high resistance for reverse bias ay cl
2) may be used as a rectifier because it off, 1) ther
relatively high resistance for forward bias a 2) the 5
very low resistance for reverse bias. the net
3) cannot be used as a rectifier 3) the
4) may be used as an amplifier direct
‘When a junction diode is reverse biased, 4) the
the current called drift currentis due to directe
1) majority charge carriers of both n&p sides 37. When
2) minority charge carriers of both n&p sides biased
3)holes ofboth n &p sides due to
4) conduction band electrons of n-side only holes.
Among the following one statement is not 1) Visi
correct when a junction diodeisin forwari 3)UV
bias 38. Theg
1) the width of depletion region decreases chara
2) free electron on n- side will move towards of th
the junction: relay:
3)hokes onp -side move towards the junctet regul:
4) electron onn- side and holes on p-side Wl!
Move away from junction
A toe diode when used as a vollast
regulator is conn,
(@) in forward hie a
(b) in reverse bias ¥,
(©) in parallel to the load
(d) in series to the load ce
1)@) and (b) are correct :
2)(b) and (c) are correct Curreng
3)(@) only is correct
4)@) onlyis correct’
1) eyPetential in the depletion Iyer
Pi 2) Holes Vay
4) Forbidden ®™ ers a
Sand
fliers
8 and
#
™
ibe photo
17) The intensity of the light falling on the cell
43) The frequency of the light falling on the cell
4) The voltage applied at the p-n junction
ina p-n junction diode, not connected to
say ireuit
{the potential is the same everywhere
+2)the p-type side is at a higher potential than
che p-type side.
5) there is an electric field at the junction
rected from the n-type side to the p-type side.
4) there is an electric field at the junction
Gaected from the p-type side to the n-type side.
) Visible region 2) Infrared region
3) UV region 4) X-ray region
‘The graph given below represents the LV
of the charactersties curve is most
relavant for its operation as a voltage
regulator,
7) |
39.
41.
42.
43.
Match List-1 with List-2
List
a ust2
) Intrinsic E) Donor level
‘semiconductor
B) N-type F) Acceptor level
sisi ptor
Op-type G) immobile ions
semiconductor
D) Depletion layer
ABCD
F EGH I
EF GW
a and f is
p= B=
3)p=a(l-a) p=
In a junction transistor the emitter, base
and collector are made of
1) extrinsic semi conductors
2) intrinsic semi conductors
3) both 1 and 2
4) metal
Ina transistor
1) both emitter and the collector are equally
doped
2) base is more heavily doped than collector
3) collector is more heavily doped than the
emmiter
4) the base is made very thin andis lightly doped
In the use of transistor as an amplifier
1) the emitter - base junction is reverse biased
and the collector base junction is also reverse
biased
2) the emitter - base junction is forward biased
‘and the collector - base junetion is reverse biased
3) both the junctions are forward biased
4) any of the two junctions may be forward
biased. 44. ACE transistor amplO=’ oats
signal because OU 5 nese
1) B times, 4a times
|. atthe
th onyx Vx :
ty yen, onyaxiand Ve nse
Yai ones ons-sis KPa
anon ais OPE
4s. bey transistors said to e inactive
region of operation, When
are forward biased Sioa
2) Both emitter junction and collector junction
are reverse biased :
3) Emitter junction is forward biased and
collector junctionis reverse biased
4) Emitter junction is reverse biased and
collector junctionis forward biased
47. When n-p-n transistoris used asan amplifier
1) electrons move from collector to base
2) holes move from collector to base
3) electrons move from base to emitter
4) oles move from base to emitter
a Anpatranistor conducts when
) both collector and emitter i
aielodae ‘are positive with
2) detec
Deas ne
fa transist
52. The a and f 0 OF are a
part, bt 2) a In the Binary number system 1+1=
ei 2 3104) 100
A= B= 1, then in terms of Boolean
‘*lgebra the value of A.B +A is not equal to
‘ DBAB 2)BrA 3)B NAB
i ie Boolean algebra, the following one
‘his not equal to Ais
i —
DAA 2)A+A 3)GA MAGA
. The logic expression which is NOT
true in Boolean algebra is
1) [ivi]1s0 2) [iso]1=0
3) [i+0] 4) [l+taso
LEVEL-I-KEY
105 25 3)02 3 53 O1
14 M1 HL Io My 12) H.11
13)4 14)215)2 16099 — 17)2
18)125 193 204 21)2 22)3
23)4 24)325)4
LEVEL-I - HINTS
1240 Vv
"Fame" =05e¥
‘We know that for a doped semiconductor in
thermal equilibrium, we have n,n, = 7)
As per given data, ,=1.5x10%m*
n, = 45x10" m*
‘Ths
15x10) m
ny 45x17 me?
W =¥q Edg
= 5x 10° x400%10° x1.6x10-°
5108 x400%10" x1.610 °F
eee
1.6x10"
= 2000 X 10% eV=0.2eV
Electron concentration in n-region is more
‘as compared to that in p-region
A 15-5 ___10
‘Al (88—38)x10% S0x10*
5.010? m=
<
=f - Bat’ -2x10'0
P=VI (for resistor)
=(3-0.7)20%«10 * 52.3% 20x10"
= 46x10" = 0.04617
.7 x 20 107 = 0.0147
for diode, P 0.812R,
8. SHR,
9, In CE Amplifier phase difference between
input and output Voltage is 1 80°
R
=f
10. Vog“LR 5 18,4, = AgB 319.40 =P R
‘output resistance
11, Voltagegain=current gain x SPUteS NSS
input resistance
90 10
=, 3h k
12. eget ns
Ak
13. Al, =Al, -Al, and B ab
14. Current gainin C— £ Mode
=> 1,=6.9mA
Al, _ 25x10
ti =—1 t
8. = Roxig? = 1250"
19. Bower gine caren gin) MPM resistance
put resistence
#15) =11) hy
*A823bh
