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ANTAR

The document discusses carbon nanotube field-effect transistors (CNFETs). It describes the different types of carbon nanotubes and CNFETs, including single-walled carbon nanotubes, multi-walled carbon nanotubes, back gate CNFETs, top gate CNFETs, wrap-around gate CNFETs, and suspended CNFETs. It also compares CNFETs to MOSFETs and outlines some advantages and disadvantages of CNFETs.

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Koustav Mondal
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38 views15 pages

ANTAR

The document discusses carbon nanotube field-effect transistors (CNFETs). It describes the different types of carbon nanotubes and CNFETs, including single-walled carbon nanotubes, multi-walled carbon nanotubes, back gate CNFETs, top gate CNFETs, wrap-around gate CNFETs, and suspended CNFETs. It also compares CNFETs to MOSFETs and outlines some advantages and disadvantages of CNFETs.

Uploaded by

Koustav Mondal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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UNIVERSIT

Y OF
KALYANI
NAME – KHOKON DAS
ROLL – 2116134 NO – 2037352
REGN NO – 037428
YEAR – (2020-21)
DESSERTATION TOPIC - CARBON
NANOTUBE FIELD-EFFECT TRANSISTOR
CARBON NANOTUBE
A carbon nanotube (CNT) is a tube made of carbon
with diameters typically measured in nanometres

There are two types of carbon nanotube.


1. Single walled carbon nanotubes (SWNT)
2. Multi-walled carbon nanotubes (MWNT)

 Single walled carbon nanotubes (SWNT):


Single-wall carbon nanotubes (SWNTs) are a special
class of carbon materials known as one-dimensional
materials. They consist of sheets of graphene, rolled up
to form hollow tubes with walls one atom thick
Graphene is a form of carbon consisting of planar
sheets which are one atom thick, with the atoms
arranged in a honeycomb-shaped lattice.

SWNT can be classified into three types.


1. Armchair.
2. Zigzag and
3. Chirality.

Armchair and zigzag nanotubes are also known as


achiral (symmetric) SWNT since its mirror image is
identical to the original structure. In chirality
SWNT the mirror image is not identical to the
original structure.

It is observed that armchair nanotubes are


metallic, Zigzag nanotubes are semi metallic to
semiconducting and chirality nanotubes are low
conducting or semiconducting.

 Multi-walled carbon nanotubes (MWNT)


A multi-walled carbon nanotube can be viewed as
a concentric arrangement of SWCNTs, i.e.
consisting of multiple layers of graphene.
Carbon nano tubes have extra-ordinary strength,
unique electrical properties and efficient
conductors of heat.

CNT BASED TRANSISTORS


CNT based transistors are the transistors in which
carbon nanotubes are used. Carbon nanotube
field effect transistor was first demonstrated in
1998. In CNTFET a single carbon nanotube or an
array of carbon nanotubes are used as the
channel material instead of bulk silicon in
traditional MOSFET structure.

Carbon nanotube field-effect transistors (CNFETs)


are more energy- efficient than silicon field-effect
transistors and could be used to build a new
generation of three-dimensional microprocessors.
But until now, these devices have been mostly
restricted to academic laboratories with only
small numbers produced.

 Types of CNTFET.
The FETSS made of carbon nanotubes can be
classified into
1. Back gate CNTFETS.
2. Top gate CNTFETS.
3. Warp-around gate CNTFETS.
4. Suspended CNTFETS.

In Back gate CNTFETS there are parallel strips of


metal on silicon dioxide substrate. CNTs are
deposited on the metal in a random pattern. One
metal strip is called the source and the other is
the drain. The silicon dioxide substrate can be
used as the gate oxide.

Back gate CNTFETs have high contact


resistance(≥1MQ). This large contact resistance
results from the weak van-der walls coupling of
the devices to the metal electrode.

Top gate fabrication process is more advance than


back gate CNTFET. Here single-walled carbon
nano tubes are used. Indivisual nanotubes are
located using atomic force microscope or
scanning electron microscope.
1) Back gate CNTFET
 Silicon dioxide is the gate oxide above which a
single walled carbon nano tube (SWCNT) is
bridged between two metal pre fabricated
strip by lithography.
 One metal is source and the other is drain.
The CNT is randomly placed above the metal
strips.
 The limitation of this model are high parasitic
contact resistance, low drive currents and low
transconductance. To overcome these
limitations next generation CNTFET is
developed.
2) Top gate CNTFET

 In this model as the name says the gate is


fabricated over the Carbon Nano Tubes. The
source and the drain are patterned by high
resolution electron beam lithography.
 A laver of dielectric is fabricated above the
carbon tube by evaporation or atomic layer
deposition.
 Many top gate CNTFET can be fabricated on a
same wafer on which the gates are electrically
isolated.
 The advantage of this method is drain current
is increased from nanometers to
micrometers, transconductance is also
increased. So this method is preferred over
the previous method though the fabrication
process is complex.

3) Wrap around gate CNTFET


 Wrap around CNTFET is also known as gate -
all-around CNTFET and it was developed in
the year 2008.
 In other methods only part of the nanotubes
is gated. Here the entire nano tube is covered
by gate which reduces leakage current and it
improves the electrical performance.
 The fabrication process starts by wrapping the
carbon nano tube with dielectric layer by
atomic layer deposition.
 The wrapping is partially etched to expose the
ends of the nanotube. Then the source, drain
and gate contacts are deposited on the
nanotubes.

4) Suspendd CNTFET
 In this method gate is suspended over a
trench to reduce the contact with substrate
and gate oxide.
 Thus the device performance is increased. But
the drawback in this method is gate dielectric
medium is air or vacuum. Only short CNTs are
used because long tubes may touch the metal
contact which may short the device.
 It is not available commercially. It used to
research about the intrinsic properties of
clean CNT.

Comparison of CNTFET with MOSFET


 In MOSFET switching occurs by altering
channel resistivity in CNTFET switching occurs
by modulation of contact resistance.
 CNTFET generates three to four times of drive
current than MOSFET.
 Transconductance of CNTFET is four times
higher than the MOSFET.
 The average carrier velocity is double in
CNTFET than that is in MOSFET.

Advantages
 Low power consumption
 Electron mobility is high
 Lower threshold voltages
 Better control over channel formation
 No direct Tunneling
 Gate leakage Current is reduced

Disadvantages
 Cannot be operated at high temperature or at
high electric current.
 Fabrication process is difficult.
 Cost of production is high.
 Lifespan is less.

Applications
Used in solar cell
Used mainly in VLSI
Used in faster computer chips
Cancer treatment
Cardiac autonomic regulation
For platelet activation
For tissue regeneration

SOURCES AND ACKNOWLEDGEMENTS

I would like to express my sincere gratitude


towards the internet sources and research
paper below which helped and guided me
providing various informations and details.

SOURCES

Characterization of Carbon. Nanotube Field


Effect Transistor
https://core.ac.uk/download/pdf/61802786.p
df
https://en.m.wikipedia.org/wiki/
Carbon_nanotube_fieldeffect_transistor

https://news.mit.edu/2020/carbon-nanotube-
transistors-factory- 0601

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