B - SC - Electronic Science I & II Sem
B - SC - Electronic Science I & II Sem
Semester-II
Subject: Electronics
iii. Two questions will be set from each unit. A student is required to attempt one
4. Distribution of Marks :
* For each paper question paper will be of 40 marks and 10 marks in each theory paper
are awarded through internal assessment in each semester.
i) The Practical examination will be held at the end of 2nd semester in two sittings of
three hours each with First sitting starting in the evening session of the first day and
second sitting in the following morning session.
ii) A candidate is required to perform minimum of 6 experiment in each section out of
the list provided during course of study in Semester I and Semester II and is
required to perform one experiment from each section in examination. Experiment
from one section in First Sitting and experiment from other section in Second
Sitting.
Lab Record: 20
Experiments: 20 + 20
Viva/Voce : 20+20
iv) Maximum 10 students in one group during course of study and also in Examination.
Semester-I
Subject: Electronics
Paper: I (Theory)
Time: 3hrs.
Unit -I
Intrinsic and Extrinsic semiconductors, Energy Band diagram, drift and diffusion current in
semiconductors(Basic idea only), Junction diode and its characteristics, Space charge capacitor
and diffusion capacitor (simple idea only), Zener diode, Voltage Regulation using Zener Diode
(Basic Idea), shunt and series clipping ckts., clamping circuit .
Unit-II
Unit –III
Junction Transistor: Potential curves in unbiased and biased transistor, Transistor current
components, Early effect, Static Characteristics of CB & CE configuration, active, cut off and
saturation regions.
Unit-IV
Ebers-moll model of transistor, Hybrid-Model of transistor, Emitter follower, calculation of
transistor amplifier parameters using h-model, comparison of transistor amplifier configuration,
millers – theorem and its dual
Ref.:
Subject-Electronics
Paper: II (Theory)
Nomenclature:-Digital Electronics-I
Time: 3hrs.
Unit-I
Number systems: Binary, Octal, Hexadecimal number system and base conversions, Binary
Arithmatic operations , 1’s and 2’s complement representation and there arithmetic. Binary
codes-BCD, Grey, cyclic, ASCII, EBCDIC, Parity Bit Code, Unicode, Sequential Code.
Unit-II
Unit III
Bipolar Logic families , Unipolar Logic families , characteristics of Digital IC’s. Resistance-
Transistor Logic (RTC), Direct Coupled Logic(DCTL), Diode Transistor Logic .
Unit-IV
High Treshhold Logic, TTL, Schott-ky TTL, ECL, MOS logic, CMOS Logic
Ref.:
iii. Two questions will be set from each unit. A student is required to attempt one
3. Instructions should be imparted using SI system of units. Familiarity with CGS system of
units should also be ensured.
4. Distribution of Marks :
* For each paper question paper will be of 40 marks and 10 marks in each theory paper are
awarded through internal assessment in each semester.
i) The Practical examination will be held at the end of 2nd semester in two sittings of three
hours each with First sitting starting in the evening session of the first day and second
sitting in the following morning session.
ii) A candidate is required to perform minimum of 6 experiment in each section out of the list
provided during course of study in Semester I and Semester II and is required to perform
one experiment from each section in examination. Experiment from one section in First
Sitting and experiment from other section in Second Sitting.
Lab Record: 20
Experiments: 20 + 20
Viva/Voce : 20+20
iv) Maximum 10 students in one group during course of study and also in Examination.
Semester-II
Subject: Electronics
Paper: I (Theory)
Time: 3hrs.
Unit-I
Why Bias a Transistor, Selection of Operating Point, Need for Bias Stabilization, Requirement of
a Biasing Circuit, Different Biasing Circuits, Fixed-Bias Circuit, Collector-to-base Bias Circuit.
Unit-II
Bias Circuit with Emitter Resistor, Voltage Divider Biasing Circuit, Emitter-Bias Circuit, Gain of a
multi-stage amplifier.
Unit-III
Unit-IV
Junctions Field Effect Transistor, Qualitative Description of JFET, Drain and transfer
characteristics of JFET, FET small signal low frequency model, CS & CD low frequency model,
MOSFET -Depletion and enhancement and their drain & transfer characteristics.
Ref.:
Semester –II
Subject: Electronics
Paper: II (THEORY)
Time: 3hrs.
Unit-I
Kirchhofs Voltage Law, Kirchhofs Current Law, Mesh Analysis, Nodal Analysis, Source
Transformation Technique, Star-Delta Transformation, Superposition Theorem, Thevenin’s
Theorem.
Unit-II
Unit –III
Two–port Network ,open Circuit Impedance(Z) Parameters, Short Circuit Admittance (Y)
Parameters, Transmission(ABCD) Parameters, Inverse Transmission (A’B’C’D’) Parameters,
Hybrid(h) Parameters, Inverse Hybrid(g) Parameters , Inter Relationships of different Parameters
Unit –IV
Ref.:
SEMESTER 1 & 2
SUBJECT: ELECTRONICS
Section-A
Section-B