SGW15N60

SGP15N60
SGW15N60
Fast IGBT in NPT-technology
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs G
• Designed for: E

- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability PG-TO-220-3-1 PG-TO-247-3

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat) Tj Marking Package

SGP15N60 600V 15A 2.3V 150°C G15N60 PG-TO-220-3-1

SGW15N60 600V 15A 2.3V 150°C G15N60 PG-TO-247-3

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current IC A
TC = 25°C 31
TC = 100°C 15
Pulsed collector current, tp limited by Tjmax ICpuls 62
Turn off safe operating area - 62
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage VGE ±20 V
Avalanche energy, single pulse EAS 85 mJ
IC = 15 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
Short circuit withstand time2 tSC 10 µs
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation Ptot 139 W
TC = 25°C
Operating junction and storage temperature Tj , Tstg -55...+150 °C
Soldering temperature, Ts 260
wavesoldering, 1.6mm (0.063 in.) from case for 10s

1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.

1 Rev. 2.3 Sep 08

 SGP15N60
SGW15N60
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.9 K/W
junction – case
Thermal resistance, RthJA PG-TO-220-3-1 62
junction – ambient PG-TO-247-3-21 40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =500 µA 600 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V, I C =15A
T j = 25°C 1.7 2 2.4
T j = 150 °C - 2.3 2.8
Gate-emitter threshold voltage VGE(th) I C =400 µA,V C E =V G E 3 4 5
Zero gate voltage collector current ICES V C E = 60 0 V,V G E = 0 V µA
T j = 25°C - - 40
T j = 150 °C - - 2000
Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 100 nA
Transconductance gfs V C E =20V, I C =15A 3 10.9 - S
Dynamic Characteristic
Input capacitance Ciss V C E =25V, - 800 960 pF
Output capacitance Coss VGE=0V, - 84 101
Reverse transfer capacitance Crss f=1MHz - 52 62
Gate charge QGate V C C = 48 0 V, I C =15A - 76 99 nC
V G E =15V
Internal emitter inductance LE PG-TO-220-3-1 - 7 - nH
measured 5mm (0.197 in.) from case PG-TO-247-3-21 - 13 -
2)
Short circuit collector current IC(SC) V G E =15V,t S C ≤1 0 µs - 150 - A
V C C ≤ 60 0V,
T j ≤ 150 °C

2)
Allowed number of short circuits: <1000; time between short circuits: >1s.

2 Rev. 2.3 Sep 08

 SGP15N60
SGW15N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 25°C , - 32 38 ns
V C C = 40 0 V, I C =15A,
Rise time tr - 23 28
V G E = 0 /1 5 V,
Turn-off delay time td(off) R G = 2 1Ω , - 234 281
Fall time tf L σ 1 ) =1 80nH , - 46 55
C σ 1 ) =2 50p F
Turn-on energy Eon - 0.30 0.36 mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.27 0.35
Total switching energy Ets reverse recovery. - 0.57 0.71

Switching Characteristic, Inductive Load, at Tj=150 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 150 °C - 31 38 ns
V C C = 40 0 V, I C =15A,
Rise time tr - 23 28
L σ 1 ) =1 80nH,
Turn-off delay time td(off) C σ 1 ) = 25 0p F - 261 313
Fall time tf V G E = 0 /1 5 V, - 54 65
R G = 2 1Ω
Turn-on energy Eon - 0.45 0.54 mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.41 0.53
Total switching energy Ets reverse recovery. - 0.86 1.07

1)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

3 Rev. 2.3 Sep 08

 SGP15N60
SGW15N60
80A 100A
Ic tp=5µs
70A

60A 15µs
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

10A
50A 50µs

40A TC=80°C
200µs
30A
1A
TC=110°C 1ms
20A
Ic
10A DC

0A 0.1A
10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25°C, Tj ≤ 150°C)
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 21Ω)

35A
140W
30A
120W

25A
IC, COLLECTOR CURRENT
POWER DISSIPATION

100W

20A
80W

15A
60W

10A
Ptot,

40W

20W 5A

0W 0A
25°C 50°C 75°C 100°C 125°C 25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function Figure 4. Collector current as a function of
of case temperature case temperature
(Tj ≤ 150°C) (VGE ≤ 15V, Tj ≤ 150°C)

4 Rev. 2.3 Sep 08

 SGP15N60
SGW15N60
50A 50A

45A 45A

40A 40A

35A 35A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

VGE=20V VGE=20V
30A 15V 30A 15V
13V 13V
25A 25A
11V 11V
20A 9V 20A 9V
7V 7V
15A 5V 15A 5V

10A 10A

5A 5A

0A 0A
0V 1V 2V 3V 4V 5V 0V 1V 2V 3V 4V 5V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics Figure 6. Typical output characteristics
(Tj = 25°C) (Tj = 150°C)

50A 4.0V
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE

45A Tj=+25°C
3.5V
40A -55°C
IC = 30A
+150°C
35A
IC, COLLECTOR CURRENT

3.0V
30A

25A 2.5V
IC = 15A
20A
2.0V
15A

10A
1.5V
5A

0A 1.0V
0V 2V 4V 6V 8V 10V -50°C 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics Figure 8. Typical collector-emitter
(VCE = 10V) saturation voltage as a function of junction
temperature
(VGE = 15V)

5 Rev. 2.3 Sep 08

 SGP15N60
SGW15N60

td(off)
td(off)
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns tf
100ns

tf

td(on) td(on)

tr
tr

10ns 10ns
5A 10A 15A 20A 25A 30A 0Ω 20Ω 40Ω 60Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V, (inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 2 1 Ω, VGE = 0/+15V, IC = 15A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

5.5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE

td(off) 5.0V

4.5V
t, SWITCHING TIMES

100ns
4.0V max.

tf 3.5V

tr typ.
3.0V
td(on)
2.5V
min.

10ns 2.0V
0°C 50°C 100°C 150°C -50°C 0°C 50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage
function of junction temperature as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V, (IC = 0.4mA)
IC = 15A, RG = 21 Ω,
Dynamic test circuit in Figure E)

6 Rev. 2.3 Sep 08

 SGP15N60
SGW15N60

1.8mJ 1.4mJ
*) Eon and Ets include losses Ets* *) Eon and Ets include losses
1.6mJ due to diode recovery. due to diode recovery.
Ets*
1.2mJ
1.4mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

1.0mJ
1.2mJ

1.0mJ 0.8mJ
Eon*
Eoff
0.8mJ Eoff 0.6mJ
Eon*
0.6mJ
0.4mJ
0.4mJ

0.2mJ 0.2mJ

0.0mJ 0.0mJ
0A 5A 10A 15A 20A 25A 30A 35A 0Ω 20Ω 40Ω 60Ω 80Ω
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V, (inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 2 1 Ω, VGE = 0/+15V, IC = 15A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

1.0mJ
*) Eon and Ets include losses 0
10 K/W
due to diode recovery.
ZthJC, TRANSIENT THERMAL IMPEDANCE

Ets* D=0.5
0.8mJ
E, SWITCHING ENERGY LOSSES

0.2
-1 0.1
10 K/W
0.05
0.6mJ
0.02
Eon*
R,(1/W) τ, (s)
-2
10 K/W 0.5321 0.04968
-3
0.4mJ 0.01 0.2047 2.58*10
Eoff -4
0.1304 2.54*10
-4
0.0027 3.06*10
-3
10 K/W R1 R2
0.2mJ
single pulse

C 1= τ1/R 1 C 2= τ2/R 2
-4
0.0mJ 10 K/W
1µs 10µs 100µs 1ms 10ms 100ms 1s
0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE tp, PULSE WIDTH
Figure 15. Typical switching energy losses Figure 16. IGBT transient thermal
as a function of junction temperature impedance as a function of pulse width
(inductive load, VCE = 400V, VGE = 0/+15V, (D = tp / T)
IC = 15A, RG = 21 Ω,
Dynamic test circuit in Figure E)

7 Rev. 2.3 Sep 08

 SGP15N60
SGW15N60
25V
1nF

20V Ciss
VGE, GATE-EMITTER VOLTAGE

C, CAPACITANCE
15V
120V 480V
Coss
100pF
10V

Crss
5V

0V 10pF
0nC 25nC 50nC 75nC 100nC 0V 10V 20V 30V
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge Figure 18. Typical capacitance as a
(IC = 15A) function of collector-emitter voltage
(VGE = 0V, f = 1MHz)

25 µ s 250A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT

20 µ s
tsc, SHORT CIRCUIT WITHSTAND TIME

200A

15 µ s 150A

10 µ s 100A

5µ s 50A

0µ s 0A
10V 11V 12V 13V 14V 15V 10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a Figure 20. Typical short circuit collector
function of gate-emitter voltage current as a function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C) (VCE ≤ 600V, Tj = 150°C)

8 Rev. 2.3 Sep 08

 SGP15N60
SGW15N60
PG-TO-220-3-1

9 Rev. 2.3 Sep 08

 SGP15N60
SGW15N60
PG-TO247-3

MIN MAX MIN MAX

4.90 5.16 0.193 0.203
2.27 2.53 0.089 0.099
1.85 2.11 0.073 0.083 Z8B00003327
1.07 1.33 0.042 0.052
0
1.90 2.41 0.075 0.095
1.90 2.16 0.075 0.085
2.87 3.38 0.113 0.133
2.87 3.13 0.113 0.123
0 5 5
0.55 0.68 0.022 0.027
20.82 21.10 0.820 0.831 7.5mm
16.25 17.65 0.640 0.695
1.05 1.35 0.041 0.053
15.70 16.03 0.618 0.631
13.10 14.15 0.516 0.557
3.68 5.10 0.145 0.201
1.68 2.60 0.066 0.102
5.44 0.214
3 3
19.80 20.31 0.780 0.799 17-12-2007
4.17 4.47 0.164 0.176
3.50 3.70 0.138 0.146
5.49 6.00 0.216 0.236 03
6.04 6.30 0.238 0.248

10 Rev. 2.3 Sep 08

 SGP15N60
SGW15N60
τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

TC

Figure D. Thermal equivalent

circuit

Figure A. Definition of switching times

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Leakage inductance Lσ =180nH
a nd Stray capacity C σ =250pF.

11 Rev. 2.3 Sep 08

 SGP15N60
SGW15N60
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.

12 Rev. 2.3 Sep 08

 SGW15N60

Powered by TCPDF (www.tcpdf.org)