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7MBP75RA120
IGBT-IPM R series 1200V / 75A 7 in one-package

Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· Compatible with existing IPM-N series packages
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item Symbol Rating Unit

Min. Max.
DC bus voltage VDC 0 900 V
DC bus voltage (surge) VDC(surge) 0 1000 V
DC bus voltage (short operating) VSC 200 800 V
Collector-Emitter voltage VCES 0 1200 V
DB Reverse voltage VR - 1200 V
INV Collector current DC IC - 75 A
1ms ICP - 150 A
DC -IC - 75 A
Collector power dissipation One transistor PC - 500 W
DB Collector current DC IC - 25 A
1ms ICP - 50 A
Forward current of Diode IF - 25 A
Collector power dissipation One transistor PC - 198 W
Junction temperature Tj - 150 °C
Input voltage of power supply for Pre-Driver VCC *1 0 20 V
Input signal voltage Vin *2 0 Vz V
Input signal current Iin - 1 mA
Alarm signal voltage VALM *3 0 Vcc V
Fig.1 Measurement of case temperature
Alarm signal current IALM *4 - 15 mA
Storage temperature Tstg -40 125 °C
Operating case temperature Top -20 100 °C
Isolating voltage (Case-Terminal) Viso *5 - AC2.5 kV
Screw torque Mounting (M5) - 3.5 *6 N·m
Terminal (M5) - 3.5 *6 N·m

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit
INV Collector current at off signal input ICES VCE=1200V input terminal open – – 1.0 mA
Collector-Emitter saturation voltage VCE(sat) Ic=75A – – 2.6 V
Forward voltage of FWD VF -Ic=75A – – 3.0 V
DB Collector current at off signal input ICES VCE=1200V input terminal open – – 1.0 mA
Collector-Emitter saturation voltage VCE(sat) Ic=25A – – 2.6 V
Forward voltage of Diode VF -Ic=25A – – 3.3 V
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7MBP75RA120 IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit
Power supply current of P-line side Pre-driver(one unit) Iccp fsw=0 to 15kHz Tc=-20 to 100°C *7 3 - 18 mA
Power supply current of N-line side three Pre-driver ICCN fsw=0 to 15kHz Tc=-20 to 100°C *7 10 - 65 mA
Input signal threshold voltage (on/off) Vin(th) ON 1.00 1.35 1.70 V
OFF 1.25 1.60 1.95 V
Input zener voltage VZ Rin=20k ohm - 8.0 - V
Over heating protection temperature level TCOH VDC=0V, Ic=0A, Case temperature, Fig.1 110 - 125 °C
Hysteresis TCH - 20 - °C
IGBT chips over heating protection temperature level TjOH surface of IGBT chips 150 - - °C
Hysteresis TjH - 20 - °C
Collector current protection level INV IOC Tj=125°C 113 - - A
DB IOC Tj=125°C 38 - - A
Over current protection delay time (Fig.2) tDOC Tj=25°C Fig.2 - 10 - µs
Under voltage protection level VUV 11.0 - 12.5 V
Hysteresis VH 0.2 - - V
Alarm signal hold time tALM 1.5 2 - ms
SC protection delay time tSC Tj=25°C Fig.3 - - 12 µs
Limiting resistor for alarm RALM 1425 1500 1575 ohm
*7 Switching frequency of IPM

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit
Switching time (IGBT) ton IC=75A, VDC=600V 0.3 - - µs
toff - - 3.6 µs
Switching time (FWD) trr IF=75A, VDC=600V - - 0.4 µs

Thermal characteristics(Tc=25°C)
Item Symbol Typ. Max. Unit
Junction to Case thermal resistance INV IGBT Rth(j-c) - 0.25 °C/W
FWD Rth(j-c) - 0.73 °C/W
DB IGBT Rth(j-c) - 0.63 °C/W
Case to fin thermal resistance with compound Rth(c-f) 0.05 - °C/W

Recommendable value
Item Symbol Min. Typ. Max. Unit
DC bus voltage VDC 200 - 800 V
Operating power supply voltage range of Pre-driver VCC 13.5 15 16.5 V
Switching frequency of IPM fSW 1 - 20 kHz
Screw torque Mounting (M5) - 2.5 - 3.0 N·m
Terminal (M5) - 2.5 - 3.0 N·m
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7MBP75RA120 IGBT-IPM
Block diagram

Pre-drivers include following functions

a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection

Outline drawings, mm

Mass : 440g
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7MBP75RA120 IGBT-IPM
Characteristics (Representative)
Control Circuit

Input sig nal th resh old vo ltage T j= 25°C

Power supply current vs. Switching frequency
Tj=100°C
vs. P ow er su pply vo ltage
Tj= 125 °C
50 2.5

P-side Vcc=17V

Input signal threshold voltage

N-side
Power supply current : Icc (mA)

40 2
Vcc=15V

: Vin(on),Vin(off) (V)
} Vin(off)
Vcc=13V
30 1.5 } Vin(on)

20 1

Vcc=17V
Vcc=15V
10 0.5
Vcc=13V

0 0
0 5 10 15 20 25 12 13 14 15 16 17 18
Switching frequency : fsw (kHz) Power supply voltage : Vcc (V)

Under voltage vs. Junction temperature Under voltage hysterisis vs. Jnction temperature
14 1
Under voltage hysterisis : VH (V)

12
0.8
Under voltage : VUVT (V)

10

0.6
8

6 0.4

4
0.2
2

0 0
20 40 60 80 100 120 140 20 40 60 80 100 120 140
Junction temperature : Tj (°C) Junction temperature : Tj (°C)

Over heating characteristics

Alarm hold time vs. Power supply voltage TcOH,TjOH,TcH,TjH vs. Vcc
3 200
Over heating protection : TcOH,TjOH (°C)

TjOH
OH hysterisis : TcH,TjH (°C)

2.5
Alarm hold time : tALM (mSec)

Tj=125°C 150

2
TcOH
Tj=25°C

1.5 100

1
50

0.5 TcH,TjH

0 0
12 13 14 15 16 17 18 12 13 14 15 16 17 18
Power supply voltage : Vcc (V) Power supply voltage : Vcc (V)
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7MBP75RA120 IGBT-IPM
Inverter

Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25°C Tj=125°C
Vcc=15V 120 Vcc=15V
120
Vcc=17V
Vcc=17V
100 100

Collector Current : Ic (A)

Vcc=13V
Collector Current : Ic (A)

Vcc=13V

80 80

60 60

40 40

20 20

0 0
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage : Vce (V) Collector-Emitter voltage : Vce (V)

Switching time vs. Collector current Switching time vs. Collector current
Edc=600V,Vcc=15V,Tj=25°C Edc=600V,Vcc=15V,Tj=125°C
10000 10000
Switching time : ton,toff,tf (nSec)

Switching time : ton,toff,tf (nSec)

toff
toff

1000 ton
ton

1000

tf
100
tf

10 100
0 20 40 60 80 100 120 0 20 40 60 80 100 120
Collector current : Ic (A) Collector current : Ic (A)

Reverse recovery characteristics

Forward current vs. Forward voltage trr,Irr vs. IF
120 1000

125°C 25°C
Reverse recovery time : trr(nSec)
Reverse recovery current : Irr(A)

100
trr125°C
Forward Current : If (A)

80
trr25°C

60 100

40
Irr125°C

20
Irr25°C

0 10
0 20 40 60 80 100 120
0 0.5 1 1.5 2 2.5 3
Forward current : IF(A)
Forward voltage : Vf (V)
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7MBP75RA120 IGBT-IPM

Reversed biased safe operating area

T ra n s ie n t th e rm a l re s is ta n c e Vcc=15V,Tj 125°C
1 FWD 1050
Thermal resistance : Rth(j-c) (°C/W)

900

Collector current : Ic (A)

IGBT 750

600
0.1
SCSOA
450 (non-repetitive pulse)

300

150
RBSOA
(Repetitive pulse)
0.01 0
0.001 0.01 0.1 1 0 200 400 600 800 1000 1200 1400
Pulse width :Pw (sec) Collector-Emitter voltage : Vce (V)

Power derating for IGBT P o w e r d e r a tin g fo r F W D

(per device) (p e r d e v ic e )
600 200
Collecter Power Dissipation : Pc (W)

175
Collecter Power Dissipation : Pc (W)

500
150

400
125

300 100

75
200
50
100
25

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Case Temperature : Tc (°C) Case Temperature : Tc (°C)

Switching Loss vs. Collector Current Switching Loss vs. Collector Current
Edc=600V,Vcc=15V,Tj=25°C Edc=600V,Vcc=15V,Tj=125°C
35 35
Switching loss : Eon,Eoff,Err (mJ/cycle)

Switching loss : Eon,Eoff,Err (mJ/cycle)

30 30 Eon

25 25

20 20
Eon

15 15 Eoff

10 Eoff 10

Err
5 5
Err

0 0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
Collector current : Ic (A) Collector current : Ic (A)
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7MBP75RA120 IGBT-IPM

Over current protection vs. Junction temperature

Vcc=15V
300
Over current protection level : Ioc(A)

250

200

150

100

50

0
0 20 40 60 80 100 120 140
Junction temperature : Tj(°C)
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7MBP75RA120 IGBT-IPM
Brake

C o lle c to r cu rren t vs . C ollec to r-E m itte r vo lta ge Collector current vs. Collector-Emitter voltage
T j= 25 °C Tj=125°C
Vcc=15V Vcc=15V
40 40
Vcc=17V
35 35 Vcc=17V
Vcc=13V

Collector Current : Ic (A)

Collector Current : Ic (A)

30 30 Vcc=13V

25 25

20 20

15 15

10 10

5 5

0 0
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage : Vce (V) Collector-Emitter voltage : Vce (V)

Reversed biased safe operating area

Transient thermal resistance Vcc=15V,Tj 125°C
1 350
IGBT
Thermal resistance : Rth(j-c) (°C/W)

300
Collector current : Ic (A)

250

200
0.1 SCSOA
150 (non-repetitive pulse)

100

50
RBSOA
(Repetitive pulse)
0.01 0
0 200 400 600 800 1000 1200 1400
0.001 0.01 0.1 1
Collector-Emitter voltage : Vce (V)
Pulse width :Pw (sec)

Power derating for IGBT Over current protection vs. Junction temperature
(per device) Vcc=15V
250 100
Over current protection level : Ioc(A)
Collecter Power Dissipation : Pc (W)

200 80

150 60

100 40

50 20

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140

Case Temperature : Tc (°C) Junction temperature : Tj(°C)