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PElab 1

This lab aims to analyze the reverse recovery characteristics of a diode. The document describes the theory of diode operation and biasing. It provides the procedure to create a circuit in software, apply a transient analysis, and measure the reverse recovery time, current, and charge for different resistor values. Key parameters like reverse recovery time, current, and charge are inversely proportional to the resistor value, while the softness factor is directly proportional. The results are presented in a table.

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aniqa xheikh
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22 views4 pages

PElab 1

This lab aims to analyze the reverse recovery characteristics of a diode. The document describes the theory of diode operation and biasing. It provides the procedure to create a circuit in software, apply a transient analysis, and measure the reverse recovery time, current, and charge for different resistor values. Key parameters like reverse recovery time, current, and charge are inversely proportional to the resistor value, while the softness factor is directly proportional. The results are presented in a table.

Uploaded by

aniqa xheikh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Lab 1

To Study and Analyze Reverse Recovery Characteristics of a diode

Objective

To analyze the reverse recovery characteristics of a diode.

Software Requirements

• NI Multisim
• ORCAD Pspice

Theory

Diode
A diode is a specialized electronic component with two electrodes called the anode and the
cathode. Most diodes are made with semiconductor materials such as silicon, germanium, or
selenium. The fundamental property of a diode is its tendency to conduct electric current in only

one direction.

Biasing of a Diode
Biasing, in general, refers to the application of DC voltage across the terminals of
device to establish certain operating condition for the device. Speaking of diode
biasing in simple language, it simply means that external voltage is applied across the two
terminals of the diode. Diode biasing can be done in two different ways.

• Forward biasing
• Reverse biasing

Forward biasing

When the positive terminal of the battery is connected to the p-type material and the negative
terminal of the battery is connected to the n-type material, such a connection is called forward
bias.
Reverse biasing

When the positive terminal of the battery is connected to n-type material and the negative
terminal of the battery is connected to p-type material, such a connection is called reverse bias.

Reverse Recovery characteristics


recombination only happens through the diffusion of minority carriers.
This minority carrier diffusion has much smaller concentration
gradients, and therefore diffuses orders of magnitude more slowly.
An external circuit providing reverse bias can aid in speeding this
recombination, as it can allow for faster neutralization of excess holes that migrated back to the
p-type material, and removal of excess electrons that migrated back to the n-type material. This
hole-electron recombination or charge neutralization is assumed to happen essentially
instantaneously at the semiconductor-metal interfaces, so if the external current can supply and
remove electrons under reverse bias, it will do so much faster than the "normal" hole-electron
recombination rate in the bulk of the semiconductor. That's why there can
be huge reverse currents during the reverse recovery time.

Reverse Recovery Time

If diode is forward biased and you want to turn it off, it takes a while to
extinguish free carriers flowing across the junction (electrons have to get
back to n-region and holes have to get back to p-region, then they can
recombine at the anode and the cathode, respectively). This time is called
"reverse recovery time”.

Reverse Recovery current the total current flowing across the diode during reverse recovery
time is negative, because carriers flow in opposite directions with respect to forward bias and is
called Reverse Recovery current.

Reverse Recovery Charge

The charge flowing during reverse recovery time is called "reverse recovery charge" and the
diode has to extinguish it ("recovery" from reverse-biased to neutral condition) before you can
turn it on. In the end, reverse recovery phenomenon depends on silicon doping and geometry
and is a parasitic effect in diodes, because energy involved in the process is lost.

QRR =1/2trr*Irr
Lab Task

Procedure
• Make the schematic in ORCAD as shown above.
• Specify the values for voltage source and resistor.
• Create simulation profile and select transient analysis. Enter the values required for
simulation.
• Place the current probe at R1. Click run.
• Zoom in to get the reverse recovery curve.
• Evaluate Measurement (zero cross() and min()).

Where:-

t1 =time at zero crossing of current

t2= time at minimum peak value of current


t1
t3=time when peak value is decayed 25% t2 t3

• Use zero cross function to get the time at


zero crossing of current.

IRR➔minimum peak of current

• Click on toggle cursor ➔minimum peak.


This gives the peak value of current and the
time of that peak (t2). A tab will open at bottom end showing the minimum value to
current and corresponding time. This time is t2.
• Calculate 25% of that current peak and right click on cursor to save the values. Then drag
the cursor to get that 25% of IRR value. Note the time at that value. This time is t3.

e.g.

0.25*(-6.7627mA) =1.69mA

First click on the cursor to save the value.


Drag the cursor until this value of current is obtained, and the time at that current’s value will be
t3 i.e time at which minimum peak is 25% decayed

• As shown in figure that Reverse Recovery Time tRR is (t3-t1).


• Similarly fill the table for different values of resistors

Observations and Calculations

R IRR t1 t2 t3 trr=(t3- ta=trr-tb tb=t3- SF=tb/ta QRR


t1) t2
100/2=50 2.9mA 9.976 9.9ms 9.97m 9.2ms 0.986m 4.10ms 4.16 77.6
Ω ms s s

50/2= 4.9mA 9.98m 9.97ms 9.9ms 9.1ms 0.98ms 4.06ms 4.142 7752
25Ω s

10/2= 5Ω 6.7A 9.97m 9.975m 9.2ms 9.17ms 1.022ms 4.07ms 3.98 77.1
s s

Results:
In this lab we implemented the given circuit on the software “ ORCAD ” measures all the
parameters and fill the table . The softness factor and the QRR are inversely proportional to the
value of resistance. When the softness factor and the QRR are minimum the value of resistance
is maximum. And also the IRR is maximum when the resistance is minimum . we calculated all
the parameters for three different values of resistance.

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