Scribd
Upload
52 views3 pages

2SD866 SavantIC

The document provides specifications for the SavantIC Semiconductor 2SD866 and 2SD866A silicon NPN power transistors. The transistors feature a TO-220C package, low saturation voltage, excellent hFE linearity, and high collector current ratings. They are intended for power switching applications. Key specifications include maximum voltage and current ratings, transistor characteristics like saturation voltage and current gain, and switching times.

Uploaded by

Ghalielectrosoft Ges
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
52 views3 pages

2SD866 SavantIC

The document provides specifications for the SavantIC Semiconductor 2SD866 and 2SD866A silicon NPN power transistors. The transistors feature a TO-220C package, low saturation voltage, excellent hFE linearity, and high collector current ratings. They are intended for power switching applications. Key specifications include maximum voltage and current ratings, transistor characteristics like saturation voltage and current gain, and switching times.

Uploaded by

Ghalielectrosoft Ges
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD866 2SD866A

DESCRIPTION
www.datasheet4u.com
·With TO-220C package
·Low collector saturation voltage
·Excellent linearity of hFE
·High collector current

APPLICATIONS
·For power switching applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base

3 Emitter

Absolute maximum ratings(Tc=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SD866 130
VCBO Collector-base voltage Open emitter V
2SD866A 150

2SD866 80
VCEO Collector-emitter voltage Open base V
2SD866A 100

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 7 A

ICM Collector current-peak 15 A

PC Collector power dissipation TC=25 40 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD866 2SD866A

CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

2SD866 80
Collector-emitter
V(BR)CEO IC=0.2A; IB=0 V
breakdown voltage
2SD866A 100

VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.25 A 0.5 V

VBEsat Base-emitter saturation voltage IC=5 A;IB=0.25 A 1.5 V

ICBO Collector cut-off current VCB=100V; IE=0 10 µA

IEBO Emitter cut-off current VEB=5V; IC=0 50 µA

hFE-1 DC current gain IC=0.1A ; VCE=2V 45

hFE-2 DC current gain IC=3A ; VCE=2V 60 260

fT Transition frequency IC=0.5A ; VCE=10V 30 MHz

Switching times

ton Turn-on time 0.5 µs

ts Storage time IC=3A;IB1=-IB2=0.3 A 1.5 µs

tf Fall time 0.1 µs

hFE-2 classifications

R Q P

60-120 90-180 130-260

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD866 2SD866A

PACKAGE OUTLINE

www.datasheet4u.com

Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

You might also like