Noise

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Statistical Ensemble

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Autocorrelation Function

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Power Spectral density
This part appears only when noise is up converted

X f 
2

S x  f   lim T X T  f    x(t) exp (-j 2πft) dt

T
where
T  T 0

P (Total power in 1 Hz BW at center freq f )  S x (f)  1  S x (f)

1 Hz
1 Hz 1 Hz
1 Hz
1 Hz

Up converted noise power is

P
half of noise power at dc.
Iterations of measurement noise power at dc

A2 A2
A cos  1t   A cos  0t   cos  1   0t  cos (  1)   0  t
2 2

Positive frequency Negative frequency

upconverted upconverted
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Wiener Khintchine Theorem

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Noise in Linear Systems

2
S y(f)  H(f) S x(f)

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Sources of noise
• External sources of noise (temperature) at the antenna (measured in Kelvin)
- natural
- man-made
• Receiver or transmitter noise (temperature or noise figure)

Types of noise:
- Thermal or Johnson or Nyquist noise (PDF: Gaussian, PSD: white noise)
- Shot noise (PDF: Poisson, PSD: white)
- Flicker noise (PDF: Gaussian, PSD: 1/f)
- Quantum noise (PDF: Poisson, PDF: f)

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Ideal Thermal Noise

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Thermal Noise RMS voltage

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Noisy Resistors in series

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Current Representation

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Resistors In Shunt

Total available noise power is still Pn  kTΔk and is obtained for a load
termination R 1 || R 2 .

The total rms current is obtained by adding the square of the rms current :
2 1
I 2
n, total  I n1  I n 2  I  I
2
n1
2
n2  4kT f
R1|| R2
This is due to the fact that I n1and I n 2 are uncorrelated
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Noise Shaping Example: RL Circuit

The PSD of the voltage Vn generated by the resistor R is : SV  4kTR

2 1
The square of the voltage - current transfer function is : H(f) 
R 2  ω2 L2
4kTR
The PSD of the current is then : S I  SV|H(f)|2  and the rms current I n2 is
R ω L
2 2 2

(considering  ve frequencie s only) :

   1 kT
I n2   S I df   SV|H(f)|2df  SV  df 
0 0 0 R 2  ω2 L2 L
1 1
An inductor is a noise less component but it can store noise energy : L I n2  kT
2 2
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Input Referred Noise

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Example of Input Referred Noise
2
2
I Dn  4kT gm
3

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Noise Figure and SNR ratio

Power Available from amplifier at o/p

N in and N out are the i/p and o/p noise powers

Power Available from Source

Available Power gain

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Noise Figure
N added

 N out  G A N in  N added 17
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Cascaded Network
Na1 Na2
GA1= 10 dB GA2 = 15 dB S2,out
Si S1,out
F1 = 2 dB F2 = 3 dB
Ni N1,out N2,out

N1,out  N a1  G A1 N i

N 2 ,out  N a2  G A2 N a1  G A1 N i  Example
S1,out  G A1 S i
G A1  10 dB  1010 /10   10, F1  2 dB  10(2/10)  1.58
S 2,out  G A1 G A2 S i
G A2  15 dB  1015 /10   31.62, F2  3 dB  10(3/10)  1.99
SNRin Si / N i N a  G A1 N i N a1
F1    1  1
SNRout ,1 S1,out / N1,out G A1 N i G A1 N i F2  1 1.99 - 1
F  F1   1.58   1.679  2.25 dB
G A1 10
N a2
Similarly, F2  1 
G A2 N i
SNRin Si / N i N a  N a1 G A2  G A2 G A1 N i N a1 N a2 F 1
Ftotal    2 1   F1  2
SNRout , 2 S 2,out / N 2,out G A2 G A1 N i N i G A1 N i G A1 G A2 G A1
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Filter in cascade with LNA
VG

RG Rin

Rout RL

Source Follower

Say, RG  Rin  Rout  RL  50

VG   Vin   1
g m ( RS || RL ) g m ( RS || RL )
Vout  VG  Vin , Neglecting ro 
1  g m ( RS || RL ) 1  g m ( RS || RL )
2
Vout g 2m ( RS || RL ) 2
 2  2 Attenuation
Vin 
1  g m ( RS || RL )
2

PAVN g 2m ( RS || RL ) 2
  GA  2 1
PAVS 
1  g m ( RS || RL )  2

2
Vout Rout Vin2 RG

PAVN
2 Rout  2 , PAVS  2 RG  2
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Cascade Ordering and Noise Measure

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Optimum source admittance Ys

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Noise Figure in terms of reflection coefficients

Z opt  Z 0 Y0  Yopt 1  yopt 1   opt 1  s

 opt     yopt  , ys 
Z opt  Z 0 Y0  Yopt 1  yopt 1   opt 1  s

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Constant Noise Figure Circles

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Constant Noise Figure Circles

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Noise, Gain and DC power Trade-Off in RFICs
Need for an input matching trade - off (using for example M) :
 The minimum noise gure occurs for Ys  Yopt
 The maximum available power gain G A(Ys ) occurs for Ys  Ys,M (assuming device is stable)

RFIC specic design issues :

 Both the bias point and the device size can be optimized in RFICs to optimize,
- the maximum power gain
- Fmin
- IP3 (SFDR)

 In cellular phone, talk time requires that we set a constraint on the power dissipation
of the LNA : requiring a power constraint on the optimization.
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Other Types of Noise Source: Shot Noise
 
2
Shot noise (Poisson process: m (t )  m (t )  m (t ) noise associated with the corpuscular nature of the electron (charge
2

q) and its emission over a barrier (PN and Schottky diode, BJT). Shot noise is proportional to the DC current I:

I n2  2qIf

 I n2 is about 18 pA/ Hz for 1 mA of I

 Shot noise is to be added to the thermal noise arising from the base rb
and emitter re resistance s.
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Other Types of Noise Sources: 1/f noise in MOSFETs
Trapping and release of charges in the oxide with different time constants leads to Flicker noise:

K 1
I n2  f
Wg Lg Cox f
 The corner frequency is the frequency at which the 1/f noise is equal to the thermal noise.

 A lower corner frequency is desirable.

 MOSFETS have corner frequencies around 10 KHz to 1 MHz (BJT : 10 - 100 Hz).

 1 / f (pink noise) is to be added to the thermal noise in the FET channel (drain)and gate channel noise.

 See notes from Oslo university about noise calculation in BJT' s and MOSFETS' s.
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Receiver Sensitivity

Min SNR needed for baseband processing

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Dynamic Range

Pi,mds

Po,mds

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Spurious Free Dynamic Range (SFDR)

Pout,max

10 log(Pin)

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Spurious Free Dynamic Range (Contd..)

Pout,max

Nout,floor

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Matching Networks
Consider the following circuit with RS << RP :

Both circuits have the same impedance at  when :

1 1
CS  C P and RS   RP 
R P (C P ) 2
R S (CS )2
 Can be used to decrease R P to a lower value or increase R S to a higher value.

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High Q Circuits Used for Increasing RP

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