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Lecture08 BJT Basics

The document discusses bipolar junction transistors (BJTs). It describes the basic structure of an NPN and PNP transistor, including labeled diagrams. It explains that BJTs have three terminals (base, emitter, collector) and two voltage sources are required for biasing. BJTs can operate in three modes: cut-off, saturation, or active mode, with amplification occurring in active mode. Mathematical models are presented relating collector current to base-emitter voltage and other variables. Large signal models show the terminal voltages and currents in active and saturation modes. An example problem calculates voltages and currents for an NPN transistor in a circuit.

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Jeanpierre
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© © All Rights Reserved
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31 views

Lecture08 BJT Basics

The document discusses bipolar junction transistors (BJTs). It describes the basic structure of an NPN and PNP transistor, including labeled diagrams. It explains that BJTs have three terminals (base, emitter, collector) and two voltage sources are required for biasing. BJTs can operate in three modes: cut-off, saturation, or active mode, with amplification occurring in active mode. Mathematical models are presented relating collector current to base-emitter voltage and other variables. Large signal models show the terminal voltages and currents in active and saturation modes. An example problem calculates voltages and currents for an NPN transistor in a circuit.

Uploaded by

Jeanpierre
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 9

INEL 4201 – Electronics I 4/1/2018

Bipolar Junction Transistors → Chapter 6


cross section
• A three terminal device
• Invented in 1948 at Bell Telephone Laboratories
• Ushered in a new era of solid-state circuits
• Replaced by MOSFET as predominant transistors

• Simplified structure of the npn transistor • Simplified structure of the npn transistor

npn symbol pnp symbol

1
Electronics I
INEL 4201 – Electronics I 4/1/2018

Bipolar Junction Transistors


• npn – voltages are measured with respect
to the emitter (lowest potential)
• VBE – base to emitter voltage
• VCE – collector to emitter voltage

• pnp – voltages are measured with respect


to the emitter (highest potential)
• VEB – emitter to base voltage
• VEC –emitter to collector voltage

• IB – base current
• IE – emitter current
• IC – collector current

2
G. Serrano
INEL 4201 – Electronics I 4/1/2018

BJT Operation
• Two external voltage sources are
required for biasing
• Three operation modes:
used for 1) Cut-Off
switching! 2) Saturation
3) Active
used for amplification!

3
Electronics I
INEL 4201 – Electronics I 4/1/2018

BJT Operation
• Two external voltage sources are
required for biasing
• Three operation modes:
used for 1) Cut-Off
switching! 2) Saturation
3) Active
used for amplification!

𝒊𝑬 = 𝒊𝑩 + 𝒊𝑪
4
Electronics I
INEL 4201 – Electronics I 4/1/2018

BJT Mathematical Model → Active Base / Emitter Currents


𝒊𝑪
• iC = f(vBE) 𝒊𝑩 =
𝜷
𝜷+𝟏 𝒊𝑪
𝒊𝑬 = 𝒊𝑩 + 𝒊𝑪 = 𝒊 =
𝜷 𝑪 𝜶

𝒗𝑪𝑬 IS - Saturation Current [10-12 - 10-18] A


𝑖𝐶 ∝ 𝑒 𝑣𝐵𝐸 𝑉𝑇 𝒊𝑪 ∝
𝑽𝑨 𝑨𝑬 𝒒𝑫𝒏 𝒏𝒊
• iC = f(vCE) 𝑰𝑺 =
𝑵𝑨 𝓦
𝜷 - Current Gain [50 - 200] A/A
𝒊𝑪
𝜷𝒇𝒐𝒓𝒄𝒆𝒅 = |𝒔𝒂𝒕 ≤ 𝜷
𝒊𝑩
Collector Current
𝒗𝑪𝑬 ∝ - Constant 𝜷
𝒊𝑪 = 𝑰𝑺 𝒆𝒗𝑩𝑬 𝑽𝑻 𝟏+ 𝜶=
𝑽𝑨 𝜷+𝟏
≈ 𝑰𝑺 𝒆𝒗𝑩𝑬 𝑽𝑻
VA - Early Voltage [10 - 100] V

5
Electronics I
INEL 4201 – Electronics I 4/1/2018

Large Signal Model → npn


Active Mode Saturation Mode
• vBE → forward bias • vBE → forward bias
• vBC → reverse bias • vBC → forward bias
• vCE >= 0.3V • iC ≠ f (vBE )
• iC = f (vBE ) • iC / iB = βforced< β

npn circuit model npn circuit model

6
Electronics I
INEL 4201 – Electronics I 4/1/2018

Example 6.1
An npn transistor having Is = 10-15A, β = 100, and VA = ∞ is connected as follows: the emitter is
grounded, the base is fed with a constant-current source supplying a dc current of 10μA, and the
collector is connected to a 5-V dc supply via a resistance RC of 3kΩ. Assuming that the transistor
is operating in the active mode, find VBE and VCE. Use these values to verify active-mode
operation. Replace the current source with a resistance connected from the base to the 5-V dc
supply. What resistance value is needed to result in the same operating conditions?
VCC

VCC
RC

IDC

7
Electronics I
INEL 4201 – Electronics I 4/1/2018

Large Signal Model → Active-Mode


npn - transistor pnp - transistor

• BE Junction → forward bias • EB Junction → forward bias


 vBE > 0.5V  vEB > 0.5V
• BC Junction → reverse bias • CB Junction → reverse bias
 vCE >= 0.3V  vEC >= 0.3V
• iC = f (vBE ) • iC = f (vEB )

8
Electronics I
INEL 4201 – Electronics I 4/1/2018

Large Signal Model → Saturation-Mode


npn - transistor pnp - transistor

• BE Junction → forward bias • EB Junction → forward bias


 vBE > 0.5V  vEB > 0.5V
• BC Junction → forward bias • CB Junction → forward bias

• iC ≠ f (vBE ) • iC ≠ f (vEB )
 iC/iB =βforced <β  iC/iB =βforced <β

9
Electronics I

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