APLLIED ELECTRONICS

(EE3129)
Chapter 2-3: Temperature Sensors

HIEU NGUYEN
Department of Electronics
Ho Chi Minh City University of Technology

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 1 / 114

Table of Contents

1 Sensors

2 Resistance Measurement Methods

3 Temperature Sensors
RTD
Thermistor
Thermocouple
Measure Temperature using Diode, Transistor, ICs

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 2 / 114

Table of Contents

1 Sensors

2 Resistance Measurement Methods

3 Temperature Sensors
RTD
Thermistor
Thermocouple
Measure Temperature using Diode, Transistor, ICs

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 3 / 114

Table of Contents

1 Sensors

2 Resistance Measurement Methods

3 Temperature Sensors
RTD
Thermistor
Thermocouple
Measure Temperature using Diode, Transistor, ICs

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 4 / 114

Table of Contents

1 Sensors

2 Resistance Measurement Methods

3 Temperature Sensors
RTD
Thermistor
Thermocouple
Measure Temperature using Diode, Transistor, ICs

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 5 / 114

Table of Contents

3 Temperature Sensors
RTD
Thermistor
Thermocouple
Measure Temperature using Diode, Transistor, ICs

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 6 / 114

What is RTD?
RTD: - Resistance Temperature Detectors: are sensors
used to measure temperature. It bases on the relationship
between resistance and temperature of metal.
The material has an accurate resistance/temperature
relationship: Platinum, Copper or Nickel, ... .

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 7 / 114

RTD PT(Platin) - Equation

RT = R0 x(1 + AxT + BxT 2 + CxT 3 (T − 100))

in which:
RT is the resistance at temperature T o C
R0 is the nominal resistance at 0o C
A, B and C are constants used to scale the RTD

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 8 / 114

RTD PT(Platin)

Example: RTD PT100

PT100 → R0 = 100Ω
At range from 0 − 100o C : A >> B, C = 0
→ RT = 100x(1 + 3.908x10−3 xT )
Example: In practical, many types of RTD PT: PT100,
PT75, PT50, ... → R0 = 100Ω, R0 = 75Ω, R0 = 50Ω, ...
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 9 / 114
RTD PT(Platin)

RTD Accuracy bases on Class and Type.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 10 / 114

RTD NI(Nikel) - Equation

More non-linear than RTD PT.

Hard to describe by equation.
Approximate equation:

RT = R0 x(1 + AxT + BxT 2 + CxT 4 + DxT 6 )

in which:
RT is the resistance at temperature T o C
R0 is the nominal resistance at 0o C
A, B, C and D are constants used to scale the RTD

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 11 / 114

RTD NI(Nikel)
Example: RTD Ni1000SOT (TE connectivity)
Ni100 → R0 = 1000Ω
Range: −55 − 160o C
Constant:A = 5.485x10−3 , B = 6.650x10−6
C = 2.805x10−11 , D = −2x10−17

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 12 / 114

RTD NI(Nikel)
More accuracy, given by table:

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 13 / 114

Temperature Coefficient

Assume that:
At T , resistance: R(T )
At T + dT , resistance: R(T + dT ) (dT is very
small)
Equation expressing resistance/temperature relationship
can be rewritten:

R(T + dT ) = R(T )(1 + αR xdT )

1 dR
Temperature Coefficient: αR = x
R(T ) dT

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 14 / 114

Temperature Coefficient
1 dR
Temperature Coefficient: αR = x
R(T ) dT
Depend on temperature T
At low temperature, when resistance/temperature
relationship equation is approximately linear, αR is
constant.
Example:
Example: RTD Pt100, at T = 0o C :
αR = 3.908x10−3 /o C
Example: RTD Ni1000, at T = 0o C :
αR = 5.485x10−3 /o C

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 15 / 114

Sensitivity

dR
Sensitivity: = αR xR(T )
dT
Depend on temperature R(T )
Example: RTD Pt100, at T = 0o C :
dR
= 3.908x10−3 x100 = 0.39Ω/o C
dT
Example: RTD Ni1000, at T = 0o C :
dR
= 5.485x10−3 x1000 = 5.485Ω/o C
dT

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 16 / 114

RTD in practical

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 17 / 114

RTD in practical

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 18 / 114

Effect of Lead Wire Resistance on RTD
RTDs generally use copper leads bonded to the platinum
element. These leads normally connect close to the
element and close to each other (both junctions are at
the same temperature), to prevent Seebeck voltage from
affecting the measurement.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 19 / 114

Effect of Lead Wire Resistance on RTD

RTDs are resistive devices, so lead wire resistance

directly affects its accuracy.
Long lead wire → increase lead wire resistance.
Temperature affects the lead wire resistance.
→ need to model lead wire resistance.
To decrease the negative affect of the lead wire
resistance → Lead wire compensation techniques: 3 Wire
RTD, 4 Wire RTD.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 20 / 114

Lead wire resistance

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 21 / 114

3-wire RTD lead compensation

Commonly used in industry !!!

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 22 / 114

3-wire RTD lead compensation
Using Wheatstone Bridge:
First method
Assume that: RTD

RT = R0 + ∆R

Choose: (Balance Bridge)

Connect Vm to third wire. R1 = R2 = R4 = R0

Then: (2R0 >> 2Rf + ∆R)

Es ∆R
Vm = .
4 R0
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 23 / 114
3-wire RTD lead compensation
Using Wheatstone Bridge:
Second method
Assume that: RTD

RT = R0 + ∆R

Choose: (Balance Bridge)

Connect pin − of Es to R1 = R2 = R4 = R0
third wire.
Then: (2R0 >> 2Rf + ∆R)
Rf << Rs (source
resistor) Es ∆R
Vm = .
4 R0
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 24 / 114
3-wire RTD lead compensation
Using Source current:
First method: two source
Choose:

I1 = I2 = I

Then:

V+ = IRT + 3IRL + 2IRBias

V− = 3IRL + 2IRBias
Assume that: RTD → V = IRT
RT = R0 + ∆R → V = IR0 + I .∆R
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 25 / 114
3-wire RTD lead compensation

Using Source current:

Second method: one source

V+ = I .RT + I (2RL + RBias )

V− = I (RL + RBias )
→ V = I .RT + I .RL
Still depend on RL

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 26 / 114

3-wire RTD lead compensation
Using Source current:
Second method: one source
Still have:

V+ = I .RT + I (2RL + RBias )

V− = I (RL + RBias )
Need:

V = V+ − 2V−

→ V = I .RT − I .RBias
NOT depend on RL , have offset
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 27 / 114
3-wire RTD lead compensation

Comparing two methods used to measure RTD 3 wires:

Wheatstone Bridge method measures exactly only in
a short range of temperature.
Current Source method can be used in a long range
of temperature.
Both methods require 3 RL having the same values → 3
wires have the same length.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 28 / 114

4-wire RTD lead compensation

Comparing with RTD 3 wires:

More accuracy
More expensive
→ Not worthy with extra cost
→ Less commonly used in industry
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 29 / 114
Example: RTD Measurement

Example:
Given RTD Pt100 (DIN 43760 standard) is used to
measure temperature from 0o C to 100o C .
a. Calculate the temperature coefficient, sensitivity at
range from 0o C to 100o C .
b. Design the measuring circuit so that the output
response is a linear proportional current source from
4-20mA DC.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 30 / 114

Example: RTD Measurement
Example:
Given RTD Pt100 (DIN 43760 standard) is used to
measure temperature from 0o C to 100o C .
a. Calculate the temperature coefficient, sensitivity at
range from 0o C to 100o C .
Solution: RTD Pt100 at range from 0o C to 100o C :

RT = R0 x(1 + AxT )

Where:
R0 = 100Ω
A = 3.908x10−3 o1C (Standard 43760)
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 31 / 114
Example: RTD Measurement

Example:
Given RTD Pt100 (DIN 43760 standard) is used to
measure temperature from 0o C to 100o C .
a. Calculate the temperature coefficient, sensitivity at
range from 0o C to 100o C .
Calculate:
1 dR
Temperature coefficient: αR = RT dT =A
dR
Sensitivity: dT = RT αR = R0 A = 0.39 oΩC

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 32 / 114

Example: RTD Measurement
Example:
b. Design the measuring circuit so that the output
response is a linear proportional current source from
4-20mA DC.
Assume that using Wheatstone Bridge (Ignore Error).

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 33 / 114

Example: RTD Measurement
Assume that RTD has RT = R0 x(1 + AxT ) = R0 + ∆R.
Choose resistors of Wheastone Bridge R0 .
First stage, output of Wheatstone Bridge:
RTD 1 Vcc1 ∆R
Vm = V+ − V− = Vcc1 ( − )=
R0 + RTD 2 4 R0
Second stage, choose INA128 to amplify Vm , follow
datasheet:
50k 50k Vcc1 ∆R
Vo = (1 + )Vm = (1 + )
RG RG 4 R0

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 34 / 114

Example: RTD Measurement

50k Vcc1 ∆R
Vo = (1 + )
RG 4 R0
In which:
R0 = 100Ω
∆R varies from 0 to 39Ω when T varies from 0 to
100o C
Choose Vcc1 = 3.3V and 1 + 50k
RG = 10 → RG = 5.6kΩ,
then:
Vo varies from 0 to 3.21V
→ supply Vcc2 = Vcc1 = 3.3V
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 35 / 114
Example: RTD Measurement

Stage 3: Circuit to convert V-I.

Equation:

I = 4.984V0 + 4(mA; V )
V0 + 0.8
I = (mA; V )
0.2K
Need a summing circuit and a
voltage source Vs to create 0.8V

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 36 / 114

Example: RTD Measurement

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 37 / 114

Table of Contents

3 Temperature Sensors
RTD
Thermistor
Thermocouple
Measure Temperature using Diode, Transistor, ICs

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 38 / 114

Thermistor
Thermistors: (thermal and resistor) are resistors whose
resistance changes rapidly with the small change in
temperature, more so than in standard resistors.
The relationship between the resistance and temperature
depends on the material used in a Thermistor.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 39 / 114

Thermistor
Limited range of temperature: −50o C to 120o C .
Two types: NTC (negative temperature coefficient) and
PTC (negative temperature coefficient).

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 40 / 114

Thermistor
Many types of shape.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 41 / 114

NTC
Temperature rises → Resistance decreases.
Materials: semiconductor alloys as: MgO, MgAl2 O4 ,
Mn2 O3 , Fe3 O4 , CO2O3 , NiO, ZnTiO4 , ....
Operating: Temperature rises → Conduction electrons
increase → Resistance decreases.
Application: Temperature sensor, Inrush current
limiter,...

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 42 / 114

NTC equation

Steinhart–Hart equation:
1 1
RT = R0 .exp(β.( − ))
T T0
in which:
R0 : resistance at T0 , usually: 25o C
RT : resistance at T
β: coefficient, usually: 3000 − 5000K

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 43 / 114

NTC equation

Temperature coefficient:
1 dRT −β
αR = . = 2
RT dT T
Sensitivity:
dRT −β
= αR .RT = 2 .RT
dT T

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 44 / 114

NTC example

Example:
NTC model 44000 Series (TEconnectivity) has
β = 3978K , Resistance (at 25o C ): 10kΩ, Ambient
Temperature Range: −40 to 150o C .
1 1
Equation: RT = 10.exp(3978.( − )) (kΩ)
T 298
−3978 1
Temperature coefficient: αR = = −0.048
o
2982 oC
at 25 C
dRT −3978 Ω
Sensitivity: = 2
.10k = −448 o
at 25o C
dT 298 C
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 45 / 114
NTC example
Example: NTC model R44E (datasheet) of Murata:

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 46 / 114

PTC

Temperature rises → Resistance increases.

Materials: polycrystalline ceramic: BaTiO3 ,....
Operating: Temperature rises → Thermal lattice
agitations increase → Resistance increases.
Application: Temperature sensor, Protect against
overcurrent conditions (resettable fuses),...

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 47 / 114

PTC in overcurrent protection circuit

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 48 / 114

PTC: R-T characteristics

Don’t have clearly equation.

Usually given by graphs.
Plotted on a logarithmic R/T scale, somtimes.
Using in protection circuit: Switching PTC.
Temperature Switch : Ts
T > Ts : T increase → R
increase
T < Ts : R fluctuate
At Ts : Rs = 2Rmin

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 49 / 114

PTC: R-T characteristics
Using as temperature sensor: Linear PTC
Example: : PTC TMP61 (TI)
At 25o C : R = 25kΩ
At 25o C : TCR (αR ): 6400
ppm/o C
Temperature range:
−40 − 125o C

1 RT
TCR: temperature coefficient resistor (αR = . )
RT dT
1ppm = 0.0001%

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 50 / 114

Switching and Linear PTC

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 51 / 114

Measure Thermistor
High resistor → ignore lead wire
Shorter range than RTD → use both methods
High nonlinerity → need linearization methods

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 52 / 114

Linearization methods

Using parallel resistor

Using series resistor
Using ADC
...
Can be used for any nonlinear resistor

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 53 / 114

Linearization method using parallel res

With RT : Vm = I .RT
RT RP
With RP k RT : VmL = I . = I .Rk
RT + RP
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 54 / 114
Linearization method using parallel res
Change RP , sketch VmL : RT ↓→ VmL ↓

Requirement: Choose RP → VmL is linear in range

[T1 , T2 ]
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 55 / 114
Linearization method using series res

RT
VmL = E .
RT + RS
Requirement: Choose RS → VmL is
linear in range [T1 , T2 ]
RT ↓→ VmL ↓ → Gain of linear
equation < 0

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 56 / 114

Linearization method using series res
Change RS , sketch VmL : RT ↓→ VmL ↓

→ Gain of linear equation < 0

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 57 / 114
Linearization method using series res
Another circuit:
RS
VmL = E .
RT + RS
Requirement: Choose RS → VmL is
linear in range [T1 , T2 ] RT ↓→ VmL l
→ Gain of linear equation > 0

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 58 / 114

Linearization method using series res
Change RS , sketch VmL : RT ↓→ VmL ↑

→ Gain of linear equation > 0

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 59 / 114
Linearization method using ADC
Divide R-T graph into many short spans by using ADC

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 60 / 114

Linearization method using ADC

Using ADC with high resolution bit to linearize Vm :

Voltage range: Vref − < Vm < Vref +

Vref + − Vref −
Resolution: Q = < (∆Vm )Min
2B

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 61 / 114

Example: Thermistor Measurement

Example:
Given Thermistor NTC KS102J2 has R(T0 ) = 1kΩ at
T0 = 250 C and R(T1 ) = 360.2Ω at T1 = 500 C .
a. Calculate β
b. Sketch the characteristics of Thermistor in range from
T0 to T1
c. Linear the characteristics of Thermistor using series res
d. Design the measuring circuit so that the output
response is a linear proportional voltage source from
0-12V DC.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 62 / 114

Example: Thermistor Measurement
Example:
Given Thermistor NTC KS102J2 has R(T0 ) = 1kΩ at
T0 = 250 C and R(T1 ) = 360.2Ω at T1 = 500 C .
a. Calculate β
Solution:
R1
ln
1 1 R0
R1 = R0 .exp(β.( − )) → β = = 3931.4
T1 T0 1 1
−
T1 T0
R0 = 1kΩ at T0 = 298K
R1 = 360.2Ω at T1 = 323K
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 63 / 114
Example: Thermistor Measurement
Example:
b. Sketch the characteristics of Thermistor in range from
T0 to T1

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 64 / 114

Example: Thermistor Measurement
Example:
c. Linear the characteristics of Thermistor using series res
1 1
Equation: RT = R0 .exp(β.( − ))
T T0
β − 2T0
→ RS = R0
β + 2T0

Choose TM = 350 C : RS = 475.1Ω.

In practical, choose the closest value:
RS = 470Ω

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 65 / 114

Example: Thermistor Measurement
Calculate: VEmL = RTR+R
T
S
at range from 250 C to 500 C ,
assume that the step is 30 C .

From the table, linearization equation of VmL /E is:

VmL /E = 0.0098T − 2.6174(T : K )

Max error is 0.38% at 400 C
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 66 / 114
Example: Thermistor Measurement
Example:
d. Design the measuring circuit so that the output
response is a linear proportional voltage source from
0-12V DC.
From the answer of question c:
VmL /E = 0.0098T − 2.6174(T : K )
By choosing E = 3.3V , the output VmL :
VmL = 0.0323T − 8.6374(VmL : V , T : K )
In which:
The gain: 0.0323
Offset: -8.6374 V
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 67 / 114
Example: Thermistor Measurement

The desire output is 0V at 298K = 250 C and 12V at

323K = 500 C , the equation is:

Vo = 0.48T − 143.04(VmL : V , T : K )

→ Vo = 14.86VmL − 14.69
→ Vo = 14.86(VmL − 1)
The circuit is shown in the next slide.
Choose R1 = 330Ω → R2 = 4.7K Ω

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 68 / 114

Example: Thermistor Measurement

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 69 / 114

Table of Contents

3 Temperature Sensors
RTD
Thermistor
Thermocouple
Measure Temperature using Diode, Transistor, ICs

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 70 / 114

Thermocouple
Thermocouple: an electrical device consisting of two
dissimilar electrical conductors forming an electrical
junction.
A thermocouple creates voltage depending on
temperature of environment as a result of the Seebeck
effect → measure temperature.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 71 / 114

Thermocouple

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 72 / 114

Thermoelectric Effects
Seebeck Effect: When a temperature gradient is
applied along a conductive material, charge carriers move
from the hot to the cold side.
In case of open-circuit, charge accumulation results in an
electric potential difference.

Z TH
V = S(T )dT
TL
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 73 / 114
Thermoelectric Effects
Seebeck Effect
Z TH
V = S(T )dT
TL

in which:
S(T ) : Seebeck coefficient of a material - depends on
temperature
At low temperature (normally from 0o C to 300o C ,
S(T ) is assumed to be constant:
Z TH
→V = SdT = S(TH − TL )
TL

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 74 / 114

Thermoelectric Effects
Example: The Seebeck coefficients of some common
materials at 0o C .

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 75 / 114

Thermoelectric Effects
Seebeck Effect: A voltage can be obtained when two
dissimilar conductors are connected in the Thermocouple.

Conductor A: VA = SA (TA − Tref )

Conductor B: VB = SB (TA − Tref )
→ VT = VB − VA = (SB − SA )(TA − Tref )
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 76 / 114
Thermoelectric Effects

VT = (SB − SA )(TA − Tref )αS (TA − Tref )

Let: αS = SB − SA : Seebeck coefficient of Thermocouple
- assumed to be constant at low temperature (normally
from 0o C to 300o C ).

→ VT = αS (TA − Tref )

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 77 / 114

Thermocouples example
Example: The Seebeck coefficients of some
Thermocouples (from 0o C to 300o C ).

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 78 / 114

Thermocouples example
Example: Thermocouple types and their response

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 79 / 114

Thermocouples example
Example: Thermocouple types in table

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 80 / 114

Thermocouples example
Example: Thermocouple standard reference table, more
at: https://srdata.nist.gov/its90/main/

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 81 / 114

Thermoelectric Effects
Affect of leading wire

VT = VB − VA = (SB − SA )(TA − Tref )

Conductor C: VC = SC (Tref − T1 )
→ V1 = VT + VC − VC = VT
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 82 / 114
Thermoelectric Effects
Affect of leading wire

V1 = V2 = ... = Vn = VT

→ need wire with same length

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 83 / 114
Measure Thermocouple
At Tref, connect a compensation circuit:
Vcom = f (Tref )

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 84 / 114

Measure Thermocouple

For Thermocouple: VT = αS (TA − Tref )

For compensation circuit: Vcomp = f (Tref )
At measured point: Vm = VT + Vcomp
→ Vm = αS (TA − Tref ) + Vcomp
→ Vm = αS TA − αS Tref + f (Tref )
Choose: αS Tref = f (Tref ) → Vm = αS TA
Comment:
Vm is linear
Don’t have offset
Compensation circuit is a circuit measuring voltage

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 85 / 114

Example Measure Thermocouple

Example: Using type-K Thermocouple, cold junction

compensation is RTD Pt100.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 86 / 114

Example Measure Thermocouple
RTD
At pin (+), compensation circuit: V+ = Vref
RTD + R1
Using RTD: RTD = Ro (1 + αTref )
Ro + Ro αTref
→ V+ = Vref
Ro + Ro αTref + R1
At pin (−): V_ = −VT + VR3
For Thermocouple: VT = αS (TA − Tref )
R3
Voltage on R3 : VR3 = Vref
R3 + R2
R3
→ V_ = −αS (TA − Tref ) + Vref
R3 + R2

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 87 / 114

Example Measure Thermocouple

OP AMP: V+ − V_ =
Ro + Ro αTref R3
Vref + αS (TA − Tref ) − Vref
Ro + Ro αTref + R1 R3 + R2
Choose: R3 = Ro, R2 = R1 and Ro + R1 >> Ro αTref
Ro αTref
→ V+ − V_ = Vref + αS (TA − Tref )
Ro + R1
Ro αTref
→ V+ − V_ = Vref − αS Tref + αS TA
Ro + R1
Ro αTref Ro α
Choose: Vref = αS Tref → Vref = αS
Ro + R1 Ro + R1

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 88 / 114

Example Measure Thermocouple

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 89 / 114

Table of Contents

3 Temperature Sensors
RTD
Thermistor
Thermocouple
Measure Temperature using Diode, Transistor, ICs

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 90 / 114

Measure Temperature using Diode
At temperature range from −50o C to 150o C , diode can
be used to measure temperature
I-V equation:
qVAK
IAK = IS (e kT − 1)

in which:
Eg
−
IS = C .T m e kT

IS is reverse saturation current

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 91 / 114
Measure Temperature using Diode
qVAK
In forward bias: IAK ≈ IS e kT
qVAK
→ lnIAK = lnIS +
kT
Eg
With: lnIS = lnC + mlnT −
kT
Eg qVAK
Then: lnIAK = lnC + mlnT − + (*)
kT kT
qVAK − Eg
→ = lnIAK − lnC − mlnT
kT
Eg kT kT kT
→ VAK = + lnIAK − lnC − m lnT
q q q q

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 92 / 114

Measure Temperature using Diode
Sensitivity:
dVAK k k k kT 1
= lnIAK − lnC − m lnT − m
dT q q q q T
dVAK k k
→ = (lnIAK − lnC − mlnT ) + m (**)
dT q q
Apply (*) to (**):
dVAK k Eg qVAK k
= (− + )−m
dT q kT kT q
dVAK VAK − Eg /q k
→ = −m
dT T q
At temperature range from −50o C to 150o C :
dVAK k dVAK mV
→ ≈ −m → = −2
dT q dT K
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 93 / 114
Example Using Diode in Compensation
Circuit
Example: Using type-K Thermocouple, cold junction
compensation is 1N4148.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 94 / 114

Example Using Diode in Compensation
Circuit
RP1
At pin (+): V+ = Vref
RP1 + R4
At node (1): V1 = −VT + VR3
For Thermocouple: VT = αS (TA − Tref )
R3
Voltage on R3 , using superposition: VR3 = VAK
R3 + R2
R3
→ V1 = −αS (TA − Tref ) + VAK
R3 + R2
For diode: VAK = VAK 0 + αD Tref
VAK 0 : forward bias voltage at 0o C
mV
αD = −2 :
K
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 95 / 114
Example Using Diode in Compensation
Circuit
R3
→ V1 = −αS (TA − Tref ) + (VAK 0 + αD Tref )
R3 + R2
R3
Choose: αS Tref = −αD Tref
R3 + R2
R3
→ αS = −αD
R3 + R2
R3
→ V1 = −αS TA + VAK 0
R3 + R2
Because R3 << R2 and R3 << R6: Vi of OP AMP is V1

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 96 / 114

Example Using Diode in Compensation
Circuit

RG
OP AMP is negative amplifier with gain: Av = − and
R5
Vi has offset
→ Adjust RP1 at pin V+ to remove offset
RG RG
→ vo = − vi = αS TA
R5 R5

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 97 / 114

Measure Temperature using BJT
Using BJT as a diode to measure temperature
→ BJT in active region
Similar to diode, in forward bias:
qVbe qV
I ≈ IS e kT = IS e kT

Sensitivity:
dV mV
= −2
dT K
At temperature range from
−50o C to 150o C
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 98 / 114
Using dual pair BJTs
Using pair BJTs (same BJTs) to measure temperature
In forward bias:
qV1
I1 = IS e kT
qV2
I2 = IS e kT
q(V2 − V1 ) qVm
I2
→ =e kT = e kT
I1
Vm = V2 − V1 I2 qVm kT I2
→ ln = → Vm = ln
I1 kT q I1
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 99 / 114
Using dual pair BJTs
Measure differential voltage → Temperature

kT I2 I2
Vm = V2 − V1 = ln = 86, 17Tln (µV )
q I1 I1

Sensitivity:

dVm k I2 I2 µV
= ln = 86, 17ln ( )
dT q I1 I1 K

Sensitivity is positive
This principle is used in temperature measured ICs.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 100 / 114

A practical circuit in IC
Use only 1 current source to bias:
Q1 has area: nA
qV1
I1 = nA.JS e kT

Q2 has area: A
qV2
I2 = A.JS e kT
q(V1 − V2 )
Vm = V2 − V1 I1
→ = ne kT
I2
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 101 / 114
A practical circuit in IC
Similar to previous part:
nI2
Vm = V2 − V1 = 86, 17Tln
I1
Because I1 = I2 , then:

Vm = 86, 17Tln(n)(µV )

Remember: area of Q1 = n
times area of Q2

Vm = V2 − V1 → Q1 comprises of n Q2

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 102 / 114

IC LM335

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 103 / 114

IC LM335

Use only 1 current source to bias:

Q15 has area: 10.A
Q16 has area: A
Then:

Vm = V16 − V15 = 86, 17Tln(10)

Vm = 198, 4T (µV )

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 104 / 114

IC LM335
If Adjust PIN = 0, then:
Vm
Vout = .(R7 + R8 + R10 ) → Vout = 10T
R8
(Vout (mV ), T (K ))
Similar to IC LM35, but T is in o C

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 105 / 114

Example of IC LM335
Example: Using LM335 for Thermocouple Cold
Junction Compensation.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 106 / 114

Example of IC LM335
Example: Using LM335 for Thermocouple Cold
Junction Compensation.

Select R3 and R4 for Thermocouple type

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 107 / 114
Example of IC LM335
Example: Using LM335 for Simple Temperature
Controller.

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 108 / 114

IC AD590

AD590 is temperature sensor with current output.

dIout µV
Sensitivity: =1
dT K
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 109 / 114
IC DS18B20

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 110 / 114

IC DS18B20 - One wire interface

Read datasheet

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 111 / 114

IC DS18B20 - One wire interface

Read datasheet

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 112 / 114

Temperature Sensor Comparison

HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 113 / 114

Reference
1 Giáo trình Điện tử tương tử, Lưu Phú.
2 RTD Measurement Step-by-step Design Procedure,
Texas Instruments.
3 RTD Class-AA Replacement With High-Accuracy
Digital Temperature Sensors in Field Transmitters,
Texas Instruments.
4 Methods to Reduce Thermistor Linearization Error,
Memory, and Power Requirements Over Wide
Operating Temperature Ranges, Texas Instruments.
5 http : //www .industrial − electronics.com/
measurement − testing − com/eemi_11b.html
6 Internet
HIEU NGUYEN (HCMUT) APLLIED ELECTRONICS Chapter 2-3 114 / 114