Single Slit Diffraction
Single Slit Diffraction
Aim:
To study the intensity distribution due to diffraction from single slit and to determine the slit
width (d).
Apparatus:
Optical bench, diode Laser, screen with a rectangular slit, photo cell, micro ammeter
Formula Used:
2𝐷𝜆
d=
𝛽
First minima on either side of Central maxima is given by condition for diffraction minima. viz,
d sin θ = m λ . with m = 1
Theory:
DIFFRACTION OF LIGHT:
Light travels in a straight line. However, when light passes through a small hole, there is
a certain amount of spreading of light. Similarly, when light passes by an obstacle, it appears to
bend round the edges of the obstacle and enters its geometrical shadow.
The phenomenon of bending of light around the corners of small obstacles or apertures and its
consequent spreading into the regions of geometrical shadow is called diffraction of light.
The effect of diffraction is more pronounced if the size of the aperture or the obstacle is of
the order of the wavelength of the light. As the wavelength of visible light (~ 10-6 m) is much
smaller than the size of the objects around us, so diffraction of light is not easily seen. On the
d sin θ1 = λ
we can divide the slit AB into two halves AC & CB. Then the path difference b/w the wavelets
from A & C will be λ/2. Similarly corresponding to every point in the upper half AC, there is a
The directions of 1st minima on either side of central maximum are given by
𝜆
θ1 ≈ sin θ1 = 1. …………………(1)
𝑑
Angle θ1 is called half angular width of central maximum.
2𝜆
⸫ Angular width of central maximum 2 θ1 =
𝑑
If D is the distance of the screen from the single slit, For the lens L2 kept close to the slit D ≈ f 2
then the linear width of central maximum will be
2𝐷𝜆
β = D * 2 θ1 = …………. (2)
𝑑
Intensity of secondary maxima decreases with the order of the maximum. The reason is that the
intensity of the central maximum is due to the constructive interference of wavelets from all parts
of the contribution of wavelets form one third part of the slit (wavelets from remaining two parts
interfere destructively), the second secondary maximum is due to the contribution of wavelets from
the one fifth part only (the remaining four interfere destructively) and so on. Hence the intensity of
secondary maximum decreases with the increase in the order ‘n’ of the maximum.
1. Switch on the laser source about 15 minutes before the experiment is due to start. This ensures
that the intensity of light from the laser source is constant.
2. Allow the laser beam to fall on a slit formed in the screen provided. The photo detector is secured
to a mount and is kept as far behind the slit as possible.
3. Try to observe the diffraction pattern by putting a screen (paper) in front of photo detector. After
getting diffraction pattern on the screen (paper) remove it.
4. Adjust the position of photo detector somewhere around second minima & keep on recording the
current with the position of photo detector moving it towards central maxima and continue in same
direction till second minima on other side is obtained. The intensity distribution of the diffraction
pattern is measured with the help of a photo detector connected to a microammeter.
6. Plot a graph (position of detector) vs (current). It will be of shape shown in fig(3). Now measure
the distance (β) between two first minima on either side of central maxima from graph. This is the
width of central maxima ‘β’. Now calculate width of slit using eq (2).
Observation table
Table 1:
S.No. Lateral Position of the Current in ammeter
detector (cm) ( amp)
1
2
3
..
..
..
..
Result:
Precautions:
1. The laser beam should not penetrate into eyes as this may damage the eyes permanently.
2. The photo detector should be as away from the slit as possible.
3. The laser should be operated at a constant voltage 220V obtained from a stabilizer. This avoids
the flickering of the laser beam.
4. Laser should be started at least 15 minutes before starting the experiment.
5. Scale of vernier should be rotated slowly.