RVS COLLEGE OF ENGINEERING AND TECHNOLOGY

DEPARTMENT OF EEE
QUESTION BANK
EC3301 ELECTRON DEVICES AND CIRCUITS
UNIT I
PART A

1. List few applications of laser diode. (April/May 2019)

 CD players
 Optical disc
 Laser printers
 Fiber and board band communication
 Aerospace

2. An a.c voltage of peak value 20 V is connected in series with a silicon diode and load resistance of
500 Ω. If the forward resistance of diode is 10 Ω find the peak current through the diode.
(Nov/Dec 2018)
VF = VPB + (If )peak [rf + RL]
(If )peak = 𝑉𝐹−𝑉𝑃𝐵 𝑟𝑓+𝑅𝐿 = 20−0.7 10+500 = 37.8 mA

3. State two disadvantages of half wave rectifier. (Nov/Dec 2018)

(i) The pulsating current in the load contains alternating component whose basic frequency is equal
to the supply frequency. Therefore, an elaborate filtering is required to produce steady direct
current.
(ii) The a.c. supply delivers power only half the time. Therefore, the output is low.

4. What is the ripple factor of half wave rectifier? (April/May 2019 R-13)
The ratio of r.m.s. value of a.c. component to the d.c. component in the rectifier output is
known as ripple factor i.e.
Ripple factor = (r.m.s. value of a.c component / value of d.c. component) = Iac / Idc
5. Define the term transition capacitance of Diode. (April/May 2019 R-13)
A capacitance excising at the P-N junction when the diode is reverse biased, where two
regions act as the plates while the depletion region acts as dielectric is called a transition
capacitance of a diode.

6. Determine the dynamic resistance of a PN diode at 300 K with ɳ= 1 and I= 26 mA. (Nov/Dec 2018
R-13)
VT= (kT)
K= Boltzmann’sconstant= 8.62*10-5 eV/oK
VT= 300*8.62*10-5=26mV
Dynamic Resistance(r)= (ɳ VT/ (Ioe V/ ɳ VT))

7. Differentiate between LED and laser Diode. (Nov/Dec 2018 R-13)

 S.No LED laser Diode
1 LASER- Light amplification by stimulated
LED- Light emitting diode
emission of radiation
2 LED’s are small in size, longer life, Laser’s are bigger in size, longer life, less
reliable & require little power. reliable & require more power than LED.
3 Generation of photon by spontaneous
Generating photon by stimulated emission.
emission
4 LED’s produce a divergent & Laser produces a monochromatic & coherent
incoherent light beam. light beam
5 Types of LED (a) surface emitter (b) Types of LASER (a) semiconductor Laser (b)
Edge emitter Gas Laser

8. What is diffusion capacitance of PN junction? (April/May 2018 R-13) (Nov/Dec 2017 R-13)
During forward bias condition, the width of the depletion region decreases and holes from p
side get diffused in n side while electrons from n side move in to p side. As the applied voltage
increases concentration of injected charge particles increases. This rate of change of the injected
charge with applied voltage is defined as a capacitance called diffusion capacitance

9. What is hole current in PN diode? (April/May 2018 R-13)

As holes are positively charged, the movement of holes cause the current called hole current.
The hole current is in opposite direction to that of an electron

10. Find the current I in the following circuit. Assume the diodes to be silicon and forward resistance
of diode to be zero. (Nov/Dec 2017 R-13)

The conditions of the problem suggest that diode D1 is forward biased and diode D2 is reverse
biased. We can, therefore, consider the branch containing diode D2 as open. Further, diode D1 can
be replaced by its simplified equivalent circuit.

11. Determine the peak output voltage of a half wave rectifier, if the diode has V F = 0.7V and the
ac input is 22V. (April/May 2019)
 PART B
1. Outline the charge carrier diffusion phenomenon across a PN junction. Explain the effect of
forward and reverse biasing on the depletion region. (13) (April/May 2019)
2. Explain the principle and operation of Light Emitting Diode (LED) with necessary expressions for
current densities and efficiency of light generation. (13) (April/May 2019)
3. (i) Explain the working of Zener diode as voltage regulator. (7) (Nov/Dec 2018)
(ii) For the following circuit, find the maximum and minimum values of Zener diode current. (6)

4.(i) Explain the working of a bridge rectifier. (6)

(ii) In a bridge rectifier circuit, input supply is 230 V, 50 Hz. Primary to secondary turns ratio is 4: 1,
load resistance is 200 Ω. The diodes are ideal. Find dc output voltage, PIV and output signal
frequency. (7) (Nov/Dec 2018)
5. Explain the voltage - current characteristics of PN junction diodes. Write down the expression for
diffusion capacitance and diode current. (April/May 2019 R-13)
6. Discuss the construction, working and application of following diodes. (April/May 2019 R-13)
(i) LASER Diode
 (ii) Zener diode (7 + 6)
7. Explain the current flow in a forward biased PN junction with relevant expressions for minority
carrier concentration and diagram to illustrate the carrier densities close to depletion layer. Also
deduce the expression for total current density. (Nov/Dec 2018 R-13)
8. (i) Enumerate the concept of Zener breakdown in PN junction with its V-I characteristics. (7)
(ii) Outline the construction of a Zener voltage regulator with a neat circuit diagram. (6) (Nov/Dec
2018 R-13)
9. Explain the working of full wave rectifier and derive expression for ripple factor, voltage, current,
efficiency, PIV and transformer utilization factor. (April/May 2018 R-13)
10. Briefly discuss the following:
i) LED
ii) Laser Diode. (6+7) (April/May 2018 R-13)

UNIT II
PART A
1. FET has lower thermal noise than BJT – Justify. (April/May 2019)
The FET has a positive temperature coefficient of resistivity. In FET, as temperature increases
its drain resistance also increases, reducing the drain current. Thus, unlike BJT, thermal run away
does not occur with FET.

2. What is meant by latching in SCR? (April/May 2019)

This is the minimum current flowing from anode to cathode when SCR goes from OFF to ON
state and remains in ON state even after the gate bias is removed. It is greater than, but very close
to holding current.

3. State any two differences between JFET and BJT. (Nov/Dec 2018)
Compare JFET and BJT. (April/May 2018 R-13)
S.No BJT JFET
1 Current controlled device Voltage controlled device
Current flows due to both majority
2 Current flows only due to both majority
and minority carriers and hence
carriers and hence unipolar device
bipolar device
3 Type- npn and pnp Type- n- channel and p- channel
4 Configurations- CB, CE,CC Configurations- CS, CD,CG

5 Higher sensitivity to change in the Lower sensitivity to change in the applied

applied signal signal

4. When VGS of a JFET changes from -3.1 V to -3 V, the drain current changed from 1 mA to 1.3
mA. Find the value of transconductance. (Nov/Dec 2018)
Transconductance (gm)=(ΔID/ ΔVGS) = 0.1/0.3=0.33

5. In a CB connection α=0.9,lE =l0mA. Compute IB (April/May 2019 R-13) (Nov/Dec 2017 R-13)
β= (α/1- α)= (0.9/1-0.9)=9
 IC= α*IE=0.9*10mA=9mA
IB= IE - IC= 10mA-9mA =1mA

6. Calculate the intrinsic standoff ratio of an UJT with R B1 = 5kΩ and D R BB = 10kΩ. (Nov/Dec 2018
R-13)
Intrinsic standoff ratio(ɳ)= (RB1/ RBB)= (5/10) = 0.5
7. List the advantages of FET over BJT. (April/May 2019 R-13) (Nov/Dec 2017 R-13)
 Input resistance is high compare to BJT
 Size is smaller compare to BJT
 More thermal stability compare to BJT
 Thermal noise is low compare to BJT

8. Define transport factor (β) for a BJT. (Nov/Dec 2018 R-13)

Transport factor (β) is the ratio of output current I C and input current IB in common emitter
configuration. Also called as common emitter amplification factor or current gain.
β= (IC / IB)
β= (α/1- α)

9. What is break over voltage of SCR? (April/May 2018 R-13)

Forward Break Over voltage (VBO)- It is the voltage above which the SCR enters the conduction
region. Forward break over voltage is dependent on the gate bias.
Reverse Break Over voltage (VBR)- It is the voltage above which the reverse breakdown occurs,
breaking J1 and J3 junctions.

10. Draw the structure of UJT. (Nov/Dec 2017 R-13)

PART B
1. (i) Brief about the operation of an N channel depletion type MOSFET with a neat diagram. (5)
(ii) Enumerate the characteristics of N channel depletion MOSFET with suitable graphs. (8)
(April/May 2019)
2. Outline the structure of a SCR and explain its operation. Also illustrate its V- I characteristics. (13)
(April/May 2019) (April/May 2018 R-13)
3. A germanium transistor is to be operated at zero signal I C = 1 mA. If the collector supply voltage
VCC = 12 V, what is the value of R B in the base resistor method? Assume β = 100. If another transistor
of same batch with β = 50 is used, what will be new value of zero signal I C for same RB? Comment on
the results. (Nov/Dec 2018)
4.(i) Discuss the characteristics of UJT. (7)
(ii) The intrinsic stand-off ratio for a UJT is 0.6. If the inter base resistance is 10 kΩ, what are the
value of RB1and RB2? (4)
(iii) State two applications of UJT. (2) (Nov/Dec 2018)
5. (i) Explain the field effect transistor action and different regions in which a FET operates. (7)
(ii) Explain the construction and Emitter Characteristics of UJT. (6) (April/May 2019 R-13)
6. With neat diagram, explain the structure and characteristics of Thyristors and IGBT. (April/May
2019 R-13)
7. Explain the structure and operation of an N channel depletion type MOSFET with relevant
characteristics. (Nov/Dec 2018 R-13)
8. With a basic structure of an N channel IGBT; explain its characteristics with a simple equivalent
circuit. (Nov/Dec 2018 R-13)
9. With neat diagram explain the working of enhancement MOSFET and depletion MOSFET with its
necessary characteristics curve. (13) (April/May 2018 R-13)

UNIT III
PART A
1. An NPN common emitter amplifier circuit has the following parameters. h fe = 50, hie = lkΩ and Rc
= 3.3kΩ . Find the voltage gain of the amplifier. (April/May 2019)

2. State the need for coupling capacitor in a transistor amplifier. (April/May 2019)
 The input coupling capacitor couples the signal to the base of the transistor. It blocks any
DC component present in the signal and passes only AC signal for amplification.
 The output coupling capacitor couples the output of the amplifier to the load.

3. For a certain D-MOSFET, IDSS = 10 mA and VGS(off)= -8 V. Check if it is an n channel or p

channel device? Justify your answer. (Nov/Dec 2018)
4. State the phase relationships between input/output currents and phase relationships between input /
output voltages of various transistor configurations. (Nov/Dec 2018)
 The common emitter transistor amplifier is the only configuration that gives an inversion,
180°, between the input and output signals. The reason for this can be seen from the fact
that as the input voltage rises, so the current increases through the base circuit.
 In CC mode there no phase shift or phase is 0 degree.
 In CB mode the phase difference between the input and out is 180 degree

5. State the significance of frequency Response characteristics. (April/May 2019 R-13)

Frequency response is the quantitative measure of the output spectrum of a system or device
in response to a stimulus, and is used to characterize the dynamics of the system. It is a measure of
magnitude and phase of the output as a function of frequency, in comparison to the input.

6. Write the expression for amplification factor of JFET. (April/May 2019 R-13)
Amplification factor (µ) is the ratio of change in drain source voltage (VDS) to the change in
gate source voltage (VGS) at constant drain current i.e.,
Amplification factor, µ = ∆VDS / ∆VGS at constant ID.

7. For a CB transistor amplifier driven by a voltage source of internal resistance RS = 1.2kΩ, the load
resistance RL = 1kΩ. The h parameters, hfe=0.98 and hoe = 0.5. Calculate the current gain.
(Nov/Dec 2018 R-13)

8. What is meant by a cut-off frequency? (Nov/Dec 2018 R-13)

The cutoff frequency for a low-pass filter is that frequency at which the output (load) voltage
equals 70.7% of the input (source) voltage. Above the cutoff frequency, the output voltage
is lower than 70.7% of the input, and vice versa.

9. Draw h-model of BJT in CB configuration. (April/May 2018 R-13)

10. What is source follower? (April/May 2018 R-13)

The common-drain amplifier is called a source-follower because the voltage at the source is
approximately the same amplitude as the input (gate) voltage and is in phase with it. In other
words, the source voltage follows the gate input voltage.
11. Define transconductance of MOSFET. (Nov/Dec 2017 R-13)
Transconductance (for transfer conductance), also infrequently called mutual conductance, is
the electrical characteristic relating the current through the output of a device to the voltage across
the input of a device. Conductance is the reciprocal of resistance.

PART B
1. (i) Draw the circuit of a CE amplifier with DC sources eliminated and deduce the small signal
model for amplifier operation. (8) (April/May 2019)
(ii) Illustrate the steps involved in analyzing a BJT amplifier circuit using small signal model. (5)
2. (i) Explain the high frequency MOSFET model under CS configuration and its simplified
equivalent circuit. (5)
(ii) Derive an expression for MOSFET unity gain frequency (fT) (8) (April/May 2019)
3. For the circuit shown below, find (i) dc bias levels (ii) dc voltages across the capacitors (iii) ac
emitter resistance (iv) voltage gain and (v) state of the transistor. (Nov/Dec 2018)

4. Explain the working of a n-channel depletion MOSFET. Discuss its transfer characteristics.
(Nov/Dec 2018)
5. Draw and explain BJT Small signal model. Compare the performance of CE, CB and CC amplifier.
(April/May 2019 R-13)
6. Explain the working of MOSFET amplifier and discuss the gain and frequency response
characteristics. (April/May 2019 R-13)
or
6. Explain the small signal model of a MOSFET under CS arrangement. Also discuss about its
frequency response. (Nov/Dec 2018 R-13)
7. From the two port model of a BJT amplifier in CE configuration, derive the expressions for input
impedance, current gain, voltage gain and output admittance. (Nov/Dec 2018 R-13)
or
7. Draw the h-parameter model of CE amplifier and derive its voltage gain, current gain, input
impedance and output impedance.
8. Explain the mid band analysis of single stage CE, CB and CC amplifiers (April/May 2018 R-13)
 UNIT IV
PART A
1. Determine the input impedance of a differential amplifier (emitter coupled) with R B = 3.9kΩ and
ZB =2.4kΩ. (April/May 2019)

2. A single tuned amplifier provides a bandwidth of 10 kHz at a frequency of 1MHz. Find the circuit
Q. (April/May 2019)
fr= 1MHz, BW= 10 kHz
Q=( fr / BW)= (1MHz/ 10 kHz) = 100

3. A multistage amplifier employs five stages each of which has a power gain of 30. What is the total
gain of the amplifier in db? (Nov/Dec 2018) (Nov/Dec 2017 R-13)
Total gain of the amplifier in db= Number of stages* 20 log10 30
= 5* 20 log10 30= 5* 1.47 = 7.385 dB
4. Define differential mode signals of a differential amplifier. (Nov/Dec 2018)
An amplifier which amplifies the difference between two input voltage signal is called
differential amplifier
The gain with which differential amplifier amplifies the difference between two input signal is
called differential gain (AD) of the differential amplifier
The gain with which it amplifies the common mode signal to produce outputl is called common
mode gain (AC) of the differential amplifier

5. What are the various coupling schemes used in Cascade Amplifier? (April/May 2019 R-13)
 RC coupling
 Transformer coupling
 Direct coupling

6. Why is neutralization method employed in amplifier? (April/May 2019 R-13)

State the need for neutralization in transistor amplifiers. (Nov/Dec 2018 R-13)
In order to prevent oscillations in tuned RF amplifier it was necessary to reduce the stage gain
to a level that ensures circuit stability. This could be accomplished by neutralization method.

7. For a differential amplifier, CMRR = 10 4 and differential gain Ad=106. Find the common mode
gain. (Nov/Dec 2018 R-13)
CMRR= Ad / Ac
Ac = Ad / CMRR= 106 / 104=100
8. What is cross over distortion? (April/May 2018 R-13)
Crossover distortion is a type of distortion which is caused by switching between
devices driving a load, most often when the devices (such as a transistor) are matched.
Crossover Distortion produces a zero voltage “flat spot” or “dead band” on the output
wave shape as it crosses over from one half of the waveform to the other.

9. Write the advantages of push pull amplifier. (April/May 2018 R-13)

 The efficiency is much higher than the class A operation
 When there is no input signal, the power dissipation is zero
 The even harmonics get cancelled
 Ripples present in supply voltage also get eliminated
 Due to the transformer, impedance matching is possible

10. What is thermal run away? (Nov/Dec 2017 R-13)

The increase in the collector current increases the power dissipated at the collector junction.
This in turn further increases the temperature of the junction and hence increases in the collector
current. The process is cumulative and it is referred to as self heating. The excess heat produced at
the collector base junction may even burn and destroy the transistor. This situation is called
thermal runaway of the transistor.

PART B
1. (i) With a neat circuit, outline the operation of a basic BJT differential pair configuration, under
common mode input signal. (8)
(ii) Deduce expressions for Emitter currents in a differential amplifier under large signal operation.
(5) (April/May 2019)
2. Illustrate the behavior of a MOSFET based amplifier circuit with tuned load. Also deduce
expressions for voltage gain at centre frequency, Q and bandwidth. (13) (April/May 2019)
3. (i) A parallel resonant circuit has a capacitor of 250 pF in one branch and inductance of 1.2 mH
and a resistance of 10Ω in the parallel branch. Find (1) resonant frequency (2) impedance of the
circuit at resonance (3) Q-factor of the circuit. (6) (Nov/Dec 2018)
(ii) Draw the frequency response of an ideal and a practical tuned amplifier and discuss their
characteristics (7) (Nov/Dec 2018)
4.(i) Compare voltage and power, amplifiers. (6) (Nov/Dec 2018)
(ii) Explain the working of a single ended input differential amplifier. (7) (Nov/Dec 2018)
5. With neat circuit, explain Common mode and Differential mode analysis of Differential amplifier.
(April/May 2019 R-13)
6. What is power amplifier? Discuss types of power amplifier and mention its applications.
(April/May 2019 R-13)
7. (i) Illustrate the operation of symmetrical emitter coupled differential amplifier with a neat circuit
diagram. (8)
(ii) Deduce the expression for common mode and differential mode (5) (Nov/Dec 2018 R-13)
8. (i) Explain the operation of a class B power amplifier with relevant diagrams. (8)
(ii) Brief about cross over distortion in power amplifiers. (5) (Nov/Dec 2018 R-13)
9. i) Explain briefly about working of BJT emitter coupled differential amplifier.
ii) What is CMRR? Derive expression for common mode and differential mode gain of differential
amplifier. (April/May 2018 R-13)
10. What is neutralization? Explain any 2methods of neutralization techniques with necessary circuit
diagram. (April/May 2018 R-13)
 UNIT V
PART A
1. What is the condition required for satisfactory operation of a negative feedback amplifier?
(April/May 2019)
 May lead to instability if not designed carefully.
 Amplifier gain decreases.
 Input and output impedances of a negative-feedback amplifier (closed-loop amplifier)
become sensitive to the gain of an amplifier without feedback (open-loop amplifier)-that
exposes these impedances to variations in the open-loop gain, for example, due to
parameter variations or nonlinearity of the open-loop gain.
 Changes the composition of the distortion (increasing audibility) if insufficiently applied.

2. An oscillator operating at 1 MHz has a stability of 1 in 10 4. What will be the minimum value of
frequency generated? (April/May 2019)

3. The overall gain of a multistage amplifier is 140. When negative voltage feedback is applied the
gain is reduced to 17.5. Find the fraction of the output that is feedback to the input. (Nov/Dec
2018)

4. In a phase shift oscillator, R 1= R2 = R3 = 1MΩ and C1= C2= C3 = 68 pF. At what frequency does
the circuit oscillate? (Nov/Dec 2018)

5. In a negative feedback, A=100,β=0.04 and V S=50mV, Compute gain with feedback and feedback
factor. (April/May 2019 R-13)
(a) Gain with feedback Af = A/(1+A)= 100/(1+100x0.04)=20
(b) Output Voltage Vo = A x Vs =100x50x10-3 =5V.
(c) Feedback factor (β) = 0.04
6. State the conditions for oscillation. (April/May 2019 R-13)
To start the oscillation with the constant amplitude, positive feedback is not the only sufficient
condition. Oscillator circuit must satisfy the following two conditions known
as Barkhausen conditions:
1. The first condition is that the magnitude of the loop gain (Aβ) must be unity. This
means the product of gain of amplifier 'A' and the gain of feedback network 'β' has to be
unity.
2. The second condition is that the phase shift around the loop must be 360° or 0°. This
means, the phase shift through the amplifier and feedback network has to be 360° or 0°.

7. An amplifier has a mid band gain of 125 and has a bandwidth of 250 kHz. Find the bandwidth if a
4% negative feedback is introduced. Nov/Dec 2018 R-13)
AV=125, BW=250 kHz and β=0.04
i) Avf= AV/(1+ β AV) =20.83
ii) BWf= BW*(1+ β AV) = 1.5MHz

8. A crystal has the following parameters, L=0.5 H, C 1=CS= 0.06pF, Ch= 1pF and R = 5 kΩ. Find the
series resonant frequency of the crystal. (Nov/Dec 2018 R-13)

9. Which type of feedback circuit increases gain of amplifier? (April/May 2018 R-13)
Negative feedback reduces the gain of the amplifier. However, the advantages
of negative feed- back are: reduction in distortion, stability in gain, increased bandwidth and
improved input and output impedances. It is due to these advantages that negative feedback is
frequently employed in amplifiers.

10. Write the expression for frequency of oscillation of RC phase shift oscillator. (April/May 2018 R-
13)
11. If an amplifier has a current gain of 240 and input impedance of 15kΩ without feedback. If the
negative current feedback (current attenation=0.015) is applied, what will be the impedance of the
amplifier. (Nov/Dec 2017 R-13)

12. What are the essential blocks of a transistor oscillator? (Nov/Dec 2017 R-13)
Transistor oscillators consist of three basic parts:
 An amplifier. This will usually be a voltage amplifier and may be biased in class A, B or C.
 A wave shaping network. This consists of passive components such as filter circuits that are
responsible for the shape and frequency of the wave produced.
 A POSITIVE feedback path.

PART B
1. With proper mathematical derivations, Prove that bandwidth increases and output resistance
reduces in a negative feedback amplifier. Assume a series shunt feedback scheme. (April/May 2019)
2. Outline the principle of LC tuned oscillators. With a neat circuit diagram deduce the necessary
condition for oscillation and expression for oscillation frequency in the case of Colpitt's oscillator.
(13) (April/May 2019)
3. (i) A 1 mH inductor is available. Find the capacitor values of a colpitt’s oscillator so that f = l MHz
and feedback fraction = 0.25. (5) (Nov/Dec 2018)
(ii) Explain the working of phase shift oscillator. (8) (Nov/Dec 2018)
4.(i) An amplifier in required with a voltage gain of 100 which does not vary by more that l%. If it is
to use negative feedback with a basic amplifier the voltage gain of which can vary by 20%, find the
minimum voltage gain required and the feedback factor. (6) (Nov/Dec 2018)
(ii) Discuss the advantages of negative feedback in amplifiers. (7) (Nov/Dec 2018)
5. What are the advantages of negative feedback? Explain voltage series and shunt feedback
techniques. (April/May 2019 R-13)
6. Draw and explain RC Phase shift oscillator Circuit. Derive the frequency of oscillations.
(April/May 2019 R-13)
7. Enumerate the characteristics of voltage series feedback amplifier with an example. (Nov/Dec
2018 R-13)
8. Discuss the principle and operation of a Colpitt’s oscillator with a circuit. Also deduce an
expression for frequency of oscillation. (Nov/Dec 2018 R-13)
9. Explain the construction and working of Hartely oscillator and derive the expression for frequency
of oscillation. (April/May 2018 R-13)
10. Explain the construction and working of colpitt’s oscillator and derive the expression for
frequency of oscillation. (April/May 2018 R-13)
 PART C
1. An electronic load requires a constant 6.8 V DC for operation. However the supply voltage
available is 10 V ± l V. The load resistance is 2 KΩ. Design a simple shunt circuit with appropriate
components to maintain the load voltage of 6.8V. Choose a proper device and justify your choice,
by indicating its characteristics The circuit diagram for the entire operation should also be
provided. (April/May 2019)
2. Provide a circuit that can amplify AM Radio signals at 800 KHz. A signal occupies a bandwidth of
10 kHz and should be provided a gain of 100. Justify the choice of the circuit and explain the
operation of the circuit. (April/May 2019)
3. Find the Q point of the transistor shown below. Also draw the d.c load line. Give β = 100 and V EE=
0.7 V. (Nov/Dec 2018)

4.(i) Explain the self-biasing of a JFET. (6) (Nov/Dec 2018)

(ii)In a self-bias n-channel JFET, the operating point is to be set at ID = 1.5 mA and VDS = 10 V. The
parameters are IDSS = 5 mA and VGS(OFF)=-2 V. Find the values of RS and RD if VDD = 20 V. (9)
(Nov/Dec 2018)
5. Explain working of Transistor and junctions biasing conditions for each mode of transistor
operation. Determine the value of emitter current, Collector current of a transistor having
αDC=0.98, Collector to base leakage current ICBO=4µA, IB=5µA. (April/May 2019 R-13)
6. Explain transistor current components for forward biased emitter Junction. Using hybrid Model,
analyze and derive transistor parameters. (April/May 2019 R-13)
7. An application circuit requires a voltage controlled resistor component. Which component would
you prefer? Enumerate the characteristics of the component, which satisfies the requirement.
(Nov/Dec 2018 R-13)
8. Can you use piezo electric effect for electronic oscillator? If so explain a component with such
characteristics. Also draw a circuit for the same. (Nov/Dec 2018 R-13)
9. The hybrid parameters for CE amplifier are h ie = 1000Ω, hfe = 150, hre = 1.2*10-4, hoe = 25x10-6
ohms. The transistor has the load resistance of 10 KΩ in collector and supplied from signal source
of resistance 5 KΩ. Calculate the values of input impedance, output impedance, current gain and
voltage gain. (April/May 2018 R-13)
10. i) In a Colpitt’s oscillator, C1 = C2=C and L= 100x10 -6 H. The frequency of oscillation is 500
KHz. Determine the value of C.
ii) In Colpitt’s oscillator, the desired frequency is 500 kHz. Find the value of L Assume C = 1000
pF. (April/May 2018 R-13)