DATA SHEET

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MOS FIELD EFFECT TRANSISTOR

2SJ598
SWITCHING
P-CHANNEL POWER MOS FET

DESCRIPTION ORDERING INFORMATION

The 2SJ598 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE
for solenoid, motor and lamp driver. 2SJ598 TO-251 (MP-3)
2SJ598-Z TO-252 (MP-3Z)
FEATURES
• Low on-state resistance:
RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A)
RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)
• Low Ciss: Ciss = 720 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package

(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS –60 V
Gate to Source Voltage (VDS = 0 V) VGSS m20 V
Drain Current (DC) (TC = 25°C) ID(DC) m12 A
Note1
Drain Current (pulse) ID(pulse) m30 A
Total Power Dissipation (TC = 25°C) PT 23 W
Total Power Dissipation (TA = 25°C) PT 1.0 W (TO-252)
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note2 IAS –12 A
Note2
Single Avalanche Energy EAS 14.4 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

Document No. D14656EJ4V0DS00 (4th edition)

Date Published August 2004 NS CP(K) The mark shows major revised points.
Printed in Japan
2000, 2001
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ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V –10 µA
Gate Leakage Current IGSS VGS = m16 V, VDS = 0 V m10 µA
Gate Cut-off Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.5 –2.0 –2.5 V

Forward Transfer Admittance | yfs | VDS = –10 V, ID = –6 A 5 11 S

Drain to Source On-state Resistance RDS(on)1 VGS = –10 V, ID = –6 A 102 130 mΩ

RDS(on)2 VGS = –4.0 V, ID = –6 A 131 190 mΩ

Input Capacitance Ciss VDS = –10 V 720 pF

Output Capacitance Coss VGS = 0 V 150 pF

Reverse Transfer Capacitance Crss f = 1 MHz 50 pF

Turn-on Delay Time td(on) ID = –6 A 7 ns

Rise Time tr VGS = –10 V 4 ns

Turn-off Delay Time td(off) VDD = –30 V 35 ns

Fall Time tf RG = 0 Ω 10 ns

Total Gate Charge QG ID = –12 A 15 nC

Gate to Source Charge QGS VDD= –48 V 3 nC

Gate to Drain Charge QGD VGS = –10 V 4 nC

Body Diode Forward Voltage VF(S-D) IF = 12 A, VGS = 0 V 0.98 V

Reverse Recovery Time trr IF = 12 A, VGS = 0 V 50 ns

Reverse Recovery Charge Qrr di/dt = 100 A /µs 100 nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME

D.U.T.
D.U.T.
RG = 25 Ω L
RL VGS(−)
VGS 90%
50 Ω VDD 10% VGS
PG. Wave Form 0
RG
VGS = −20 → 0 V PG. VDD
VDS(−)
− BVDSS 90% 90%
IAS VGS(−) VDS
VDS VDS 10% 10%
ID 0 Wave Form 0

VDD τ td(on) tr td(off) tf

ton toff
τ = 1 µs
Starting Tch Duty Cycle ≤ 1%

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = −2 mA RL

PG. 50 Ω VDD

2 Data Sheet D14656EJ4V0DS

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TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
30
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

100 25

80 20

60 15

40 10

20 5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C TC - Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

–100

ID(pulse) PW
=
10
10 µs
ID - Drain Current - A

0
µs
–10 ite
d ID(DC) 1
m
m Po s
)
Li Lim we 10
(on ite r Di m
DS d ss D
s
R ipa C
tio
n

–1

TC = 25˚C
Single Pulse
–0.1
–0.1 –1 –10 –100
VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000
rth(t) - Transient Thermal Resistance - ˚C/W

100 Rth(ch-A) = 125˚C/W

10
Rth(ch-C) = 5.43˚C/W

0.1

Single Pulse
0.01
10 µ 100 µ 1m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s

Data Sheet D14656EJ4V0DS 3

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DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE
–100 –50

–40
ID - Drain Current - A

ID - Drain Current - A
–10

–30 VGS = –10 V

–1 TA = −55˚C
25˚C
75˚C –20 –4.0 V
150˚C
–0.1
–10
VDS = –10 V
Pulsed Pulsed
–0.01 00
–1 –2 –3 –4 –5 –2 –4 –6 –8 –10
VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS(on) - Drain to Source On-state Resistance - mΩ

DRAIN CURRENT GATE TO SOURCE VOLTAGE
| yfs | - Forward Transfer Admittance - S

100 200
Pulsed

10 150

TA = 150˚C
1 75˚C ID = –6 A
100
25˚C
−50˚C

0.1 50

VDS = –10 V
0.01 Pulsed
0
–0.01 –0.1 –1 –10 –100 0 –5 –10 –15 –20
ID - Drain Current - A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE GATE CUT-OFF VOLTAGE vs.

RDS(on) - Drain to Source On-state Resistance - mΩ

RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE

300 –4.0
Pulsed VDS = –10 V
ID = –1 mA
VGS(off) - Gate Cut-off Voltage - V

–3.0
200 VGS = –4.0 V
–4.5 V
–10 V
–2.0

100
–1.0

0 0
–0.1 –1 –10 –100 –50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - ˚C

4 Data Sheet D14656EJ4V0DS

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DRAIN TO SOURCE ON-STATE RESISTANCE vs. SOURCE TO DRAIN DIODE

RDS(on) - Drain to Source On-state Resistance - mΩ
CHANNEL TEMPERATURE FORWARD VOLTAGE

300 –100
Pulsed Pulsed

ISD - Diode Forward Current - A

250
–10
VGS = –4.0 V VGS = –10 V
200

150 –10 V –1 0V

100
–0.1
50

ID = –6 A
0 –0.01
−50 0 50 100 150 0 –0.5 –1.0 –1.5
Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
10000 1000
VGS = 0 V VDD = –30 V
f = 1 MHz td(on), tr, td(off), tf - Switching Time - ns RG = 0 Ω
Ciss, Coss, Crss - Capacitance - pF

VGS = –10 V

1000 Ciss 100

td(off)

tf
100 Coss 10 td(on)
tr
Crss

10 1
–0.1 –1 –10 –100 –0.1 –1 –10 –100

VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs. DYNAMIC INPUT/OUTPUT CHARACTERISTICS

DRAIN CURRENT
1000 –60 –12
di/dt = 100 A/µs ID = –12 A
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns

VGS = 0 V
VGS - Gate to Source Voltage - V

–50 VGS –10

VDD = –48 V
–30 V
100 –40 –12 V –8

–30 –6

10 –20 –4

–10 –2
VDS

1 0 0
0.1 1 10 100 0 2 4 6 8 10 12 14 16
IF - Drain Current - A QG - Gate Charge - nC

Data Sheet D14656EJ4V0DS 5

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SINGLE AVALANCHE CURRENT vs. SINGLE AVALANCHE ENERGY

INDUCTIVE LOAD DERATING FACTOR
–100 160
VDD = –30 V
RG = 25 Ω
IAS - Single Avalanche Current - A

140
VGS = –20 → 0 V

Energy Derating Factor - %

IAS ≤ –12 A
IAS = –12 A 120
–10 EAS
= 14 100
.4 m
J
80

60
–1
40
VDD = –30 V
RG = 25 Ω 20
VGS = –20 → 0 V
–0.1 0
10 µ 100 µ 1m 10 m 25 50 75 100 125 150
L - Inductive Load - H Starting Tch - Starting Channel Temperature - ˚C

6 Data Sheet D14656EJ4V0DS

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PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3) 2) TO-252 (MP-3Z)

+0.2
1.5 −0.1
6.5 ±0.2 2.3 ±0.2

+0.2
1.5 −0.1
5.0 ±0.2 0.5 ±0.1 6.5 ±0.2 2.3 ±0.2
4 5.0 ±0.2
0.5 ±0.1
1.6 ±0.2

5.5 ±0.2

0.8 4.3 MAX.

4

1.0 MIN.
1.8TYP.
10.0 MAX.
5.5 ±0.2
13.7 MIN.
1 2 3

1 2 3
7.0 MIN.

MIN.
1.1 ±0.2

2.0

0.7
0.9 0.8
1.1 ±0.2
2.3 2.3 MAX. MAX.
0.5 −0.1
+0.2 +0.2
0.5 −0.1 0.8
1. Gate
2.3 2.3
2. Drain
1. Gate
0.75

3. Source
2. Drain 4. Fin (Drain)
3. Source
4. Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Body
Gate Diode

Gate
Protection Source
Diode

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.

Data Sheet D14656EJ4V0DS 7

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• The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1