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ES22101-Q-III-CE Branch

This document contains a model question paper for a basic electronics engineering exam. It includes 8 questions covering topics like diode rectification circuits, transistor biasing circuits, transistor amplifier circuits, and transistor characteristics. The questions involve calculating circuit parameters, deriving equations, explaining circuit operation, and analyzing transistor biasing configurations. Circuit diagrams are provided for most questions to illustrate the concepts being assessed.

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60 views3 pages

ES22101-Q-III-CE Branch

This document contains a model question paper for a basic electronics engineering exam. It includes 8 questions covering topics like diode rectification circuits, transistor biasing circuits, transistor amplifier circuits, and transistor characteristics. The questions involve calculating circuit parameters, deriving equations, explaining circuit operation, and analyzing transistor biasing configurations. Circuit diagrams are provided for most questions to illustrate the concepts being assessed.

Uploaded by

coolinkenanatam
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Model Question Paper BASIC ELECTRONICS ENGINEERING (Assignment-III)

Time: 3 hrs. MM: 100


Note: Answer all the FIVE full questions.
Note: Answer all the Eight full questions as assignment-III
1) a. With appropriate circuit diagram explain the DC load line analysis of semiconductor
diode. (5 Marks)
b. In a full wave rectifier, the input is from 30-0-30V transformer. The load and diode
forward resistances are 100Ω and 10Ω, respectively. Calculate the DC average output
voltage, dc output power, ac input power, rectification efficiency and percentage regulation.
(5 Marks)
c. Explain the working of positive clamping circuit with diagrams & waveforms. (5 Marks)
d. In a Common Emitter transistor circuit if β = 100 and IB = 50µA, compute the values of α,
IE and IC. (5 Marks) Answers: α = 0.99, IE = 5.05 mA , IC = 5 mA.
Q.2) a. With a neat circuit diagram and waveforms explain the working of full wave bridge
rectifier and show that its ripple factor is 0.48. (8 Marks)
b. Draw the common emitter circuit and sketch the input and output characteristics. Also
explain active region, cutoff region, and saturation region by indicating them on the
characteristic curve. Also, show the effect of base width modulation on the input and output
characteristic curve of a Common Emitter BJT amplifier circuit. (6 Marks)
c. Design Zener voltage regulator for the following specifications: Input Voltage varies as =
10V ± 20%, Output Voltage = 5V, IL = 20 mA, Izmin= 5 mA and Izmax= 80 mA. (6 Marks)
. Hint: Vin (Range) = (8V to 12 V), RS = 120 Ω, RL = 250 Ω . VZ of Zener Z1 = 5 V.
3) a. With a neat circuit diagram explain the Voltage Divider Bias circuit by giving its exact
analysis. (8 Marks)
b. Determine the operating point for a silicon transistor biased by fixed bias method with β =
100, RB = 500 KΩ, RC = 2.5 KΩ, RE = 0 Ω, and VCC = 20V. Also draw the DC load line. (6
Marks) Answer: Q operating point coordinate: (10.35 V, 3.86 mA)
c. Derive the two-port h-parameter equations for common Emitter BJT amplifier. And define
hie, hre, hfe and hoe constants. (6 marks)
Q. 4) a. Derive the two-port h-parameter equations for common Base BJT amplifier. And
define hib, hrb, hfb and hob constants. (7 marks)
Derive the two-port h-parameter equations for common collector BJT amplifier. And define
hic, hrc, hfc and hoc constants. (7 marks)
c. Sketch a CE BJT amplifier circuit and show that its voltage gain AV = −β RAC / Rin, where
β = IC/IB, and ac equivalent load, RAC = RC||RL = RC.RL / (RC +RL), and Rin = input
impedance of the BJT input side part. (6 marks)
Q. 5) a. Sketch a CE BJT amplifier circuit and show that its voltage gain AV ≈ −RAC / RE,
where β = IC/IB, IE = (1+ β) IB and ac equivalent load, RAC = RC||RL = RC x RL / (RC +RL), if
emitter resistor RE is not by-passed by capacitor CE. (8 marks)
b. With a neat circuit diagram explain the working of the Voltage Divider CE BJT amplifier
bias circuit by using its approximate analysis, i.e. the current gain β is very high and base
current IB can be neglected (IE ≈ IC) (7 marks)
c. Derive the co-related equations for current gains α, β, and γ. (5 Marks)
6) a. With a neat circuit diagram explain the Fixed Bias DC circuit and describe the method
to plot the DC load line on the family of output characteristic curves. (8 Marks)
b. Draw the common base circuit and sketch the input and output characteristics. Also explain
active region, cutoff region, and saturation region by indicating them on the characteristic
curve. (7 Marks)
c. Show the effect of base width modulation on the input and output characteristic curve of a
Common Emitter BJT amplifier circuit. Also define the early voltage VA. (5 Marks)
7. (a) Draw the h-parameter model equivalent circuit of a Potential Divider-biased CE
amplifier shown in figure 7 (a). State the equations to find input impedance, output
impedance, voltage gain, current gain, and power gain. (Marks 10)
(b) Consider the PD biased CE amplifier circuit shown in figure below:

It is having the circuit parameters as: Source resistance Rs = 2kΩ, R1= 60 kΩ, R2= 5.5 kΩ,
RC = 4 kΩ, RL = 4 kΩ, RE = 0.2 kΩ, hie = 1 kΩ, hre = 0, hoe = 0 µS (µA/V), and hfe = 100.
(Marks 10)
If this CE amplifier is driving a load RL = 4 kΩ connected at output node vo via a coupling
capacitor CC2 = 0.2 µF. Find? Impedance at base node ZB, RB, total input impedance Zin, R’o,
RAC, AV = V(RL) / Vi, overall voltage gain AVs, and Av (dB).
Answer hint: ZB = hie + RE (1+hfe), RB = R1||R2, Zin = R1|| R2||ZB, RAC = RC || RL || (1/hoe), AV =
(−hfe x RAC) / hie and overall voltage gain considering the source resistance RS is AVS = AV x
Zin / (Zin+RS), AV(dB) = 20 log10 (AV) = 46 dB.
Answers: ZB = 21.2 kΩ, RB = 5 kΩ, Zin = 4 kΩ, R’o = RC|| (1/hoe) = RC = 4kΩ , RAC = R’o
||RL= 2 kΩ, AV = −200 (V/V), AVs = 133.33.
8 (a) Draw the h-parameter model equivalent circuit of a fixed-biased CE amplifier shown in
figure 8(a). State the equations to find input impedance, output impedance, voltage gain,
current gain, and power gain. (Marks 10)
(b) Consider the fixed biased CE BJT amplifier with circuit parameters as: Source resistance
Rs = 1kΩ, RB= 470 kΩ, RC = 4.7 kΩ, RL = infinite, hie = 1.1 kΩ, hoe = 20 µS (µA/V), and hfe
= 110.
Calculate: Zi, Zo, AV, and Ai. (Marks 10)

Fig. 8 (a)Fixed biased common emitter BJT amplifier for question No. 8 (b).
Ans: Zi = 1.1 kΩ, Zo = 4.3 kΩ, AV = −470 (V/V), AV(dB) = 53.44 dB and Ai= −109.75
Circuit diagram of a CE amplifier:

Fig. This CE amplifier contains BC547 it has npn transistor, C1 input side coupling
capacitor, C2 = output side coupling capacitor and C3 is emitter bypass capacitor. And load
RL will be connected parallel to output.
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