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Sheet8 & Solutions

The document provides answers to questions about quasi-Fermi energy levels, excess carrier lifetime, and surface effects related to semiconductor physics. Key points: - Quasi-Fermi energy levels are calculated for n-type, intrinsic, and p-type materials under low and high injection conditions. - Excess carrier lifetime is derived showing its dependence on the excess carrier concentration and material properties. - The solution to the diffusion equation at semiconductor surfaces or interfaces is obtained, showing the excess carrier concentration depends exponentially on distance from the surface/interface.

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Nadim Doss
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27 views

Sheet8 & Solutions

The document provides answers to questions about quasi-Fermi energy levels, excess carrier lifetime, and surface effects related to semiconductor physics. Key points: - Quasi-Fermi energy levels are calculated for n-type, intrinsic, and p-type materials under low and high injection conditions. - Excess carrier lifetime is derived showing its dependence on the excess carrier concentration and material properties. - The solution to the diffusion equation at semiconductor surfaces or interfaces is obtained, showing the excess carrier concentration depends exponentially on distance from the surface/interface.

Uploaded by

Nadim Doss
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Sheet 8 NANENG 305

Part I Quasi-Fermi Energy Levels


Q1)

Answer:
𝑛 4×1016
(a) 𝐸𝐹 − 𝐸𝐹𝑖 = 𝑘𝑇 𝑙𝑛 ( 𝑛𝑜 ) = (0.0259) 𝑙𝑛 (1.5×1010 ) = 0.383225eV
𝑖
(b) 𝛿𝑛 = 𝛿𝑝 = 𝑔′ 𝜏𝑝0 = (2 × 1021 )(5 × 10−7 ) = 1015 cm−3
𝑛𝑜 +𝛿𝑛 4×1016 +1015
𝐸𝐹𝑛 − 𝐸𝐹𝑖 = 𝑘𝑇 𝑙𝑛 ( 𝑛𝑖
) = (0.0259) 𝑙𝑛 ( 1.5×1010
) = 0.383865eV

𝑝𝑜 +𝛿𝑝 1015
𝐸𝐹𝑖 − 𝐸𝐹𝑝 = 𝑘𝑇 𝑙𝑛 ( ) ≅ (0.0259) 𝑙𝑛 ( ) = 0.28768eV
𝑛𝑖 1.5×1010

(c) 𝐸𝐹𝑛 − 𝐸𝐹 = 0.383865 − 0.38322 = 0.000640eV


Q2)

Answer:

(a) For n-type,


𝐸𝐹𝑛 − 𝐸𝐹 = (𝐸𝐹𝑛 − 𝐸𝐹𝑖 ) − (𝐸𝐹 − 𝐸𝐹𝑖 )
𝑛𝑜 +𝛿𝑛 𝑛 𝑛𝑜 +𝛿𝑛
= 𝑘𝑇 𝑙𝑛 ( 𝑛𝑖
)− 𝑘𝑇 𝑙𝑛 ( 𝑛𝑜 ) = 𝑘𝑇 𝑙𝑛 ( 𝑛𝑜
)
𝑖

5×1015 +𝛿𝑛
So 0.00102 = (0.0259) 𝑙𝑛 ( 5×1015
)

0.00102
5 × 1015 + 𝛿𝑛 = 5 × 1015 𝑒𝑥𝑝 ( )
0.0259

Which yields 𝛿𝑛 ≅ 2 × 1014cm−3


𝑛𝑜 +𝛿𝑛 5×1015 +2×1014
(b) 𝐸𝐹𝑛 − 𝐸𝐹𝑖 = 𝑘𝑇 𝑙𝑛 ( ) = (0.0259) 𝑙𝑛 ( ) = 0.33038eV
𝑛𝑖 1.5×1010
𝛿𝑝 2×10 14
(c) 𝐸𝐹𝑖 − 𝐸𝐹𝑝 ≅ 𝑘𝑇 𝑙𝑛 ( 𝑛 ) = (0.0259) 𝑙𝑛 (1.5×1010 ) = 0.2460eV
𝑖
Q3)

Answer:
𝑛𝑜 +𝑛 (1.02)(1016 )
(a) (i) 𝐸𝐹𝑛 − 𝐸𝐹𝑖 = 𝑘𝑇 𝑙𝑛 ( 𝑛𝑖
) = (0.0259) 𝑙𝑛 ( 1.8×106
) = 0.58166eV
𝛿𝑝 0.02×1016
(ii) 𝐸𝐹𝑖 − 𝐸𝐹𝑝 ≅ 𝑘𝑇 𝑙𝑛 ( ) = (0.0259) 𝑙𝑛 ( ) = 0.47982eV
𝑛𝑖 1.8×106

1.1×1016
(b) (i) 𝐸𝐹𝑛 − 𝐸𝐹𝑖 = (0.0259) 𝑙𝑛 ( 1.8×106 ) = 0.58361eV
0.1×1016
(ii) 𝐸𝐹𝑖 − 𝐸𝐹𝑝 = (0.0259) 𝑙𝑛 ( ) = 0.52151eV
1.8×106

Q4)

Answer:

(a) We can write


𝑝
𝐸𝐹𝑖 − 𝐸𝐹 = 𝑘𝑇 𝑙𝑛 ( 𝑜 )
𝑛𝑖

𝑝𝑜 +𝛿𝑝
𝐸𝐹𝑖 − 𝐸𝐹𝑝 = 𝑘𝑇 𝑙𝑛 ( )
𝑛𝑖

𝑝𝑜 +𝛿𝑝 𝑝
(𝐸𝐹𝑖 − 𝐸𝐹𝑝 ) − (𝐸𝐹𝑖 − 𝐸𝐹 ) = 𝐸𝐹 − 𝐸𝐹𝑝 = 𝑘𝑇 𝑙𝑛 ( )− 𝑘𝑇 𝑙𝑛 ( 𝑜 )
𝑛𝑖 𝑛𝑖

𝑝𝑜 +𝛿𝑝
𝐸𝐹 − 𝐸𝐹𝑝 = 𝑘𝑇 𝑙𝑛 ( 𝑝𝑜
) = (0.01)𝑘𝑇

Then
𝑝𝑜 +𝛿𝑝
𝑝𝑜
= 𝑒𝑥𝑝(0.01) = 1.010

or
𝛿𝑝
= 0.010 ⇒low injection, so that 𝛿𝑝 = 5 × 1012cm−3
𝑝𝑜

(b)
𝛿𝑝 5×1012
𝐸𝐹𝑛 − 𝐸𝐹𝑖 ≅ 𝑘𝑇 𝑙𝑛 ( 𝑛 ) = (0.0259) 𝑙𝑛 (1.5×1010 )
𝑖

𝐸𝐹𝑛 − 𝐸𝐹𝑖 = 0.1505eV


Part II Excess Carrier Lifetime
Q5)

Answer:

(a)
𝐶𝑛 𝐶𝑝 𝑁𝑡 (𝑛𝑝−𝑛𝑖2 ) (𝑛𝑝−𝑛𝑖2 )
𝑅=𝐶 ′ ′ =𝜏 ′ ′
𝑛 (𝑛+𝑛 )+𝐶𝑝 (𝑝+𝑝 ) 𝑝𝑂 (𝑛+𝑛 )+𝜏𝑛𝑂 (𝑝+𝑝 )

Let 𝑛′ = 𝑝′ = 𝑛𝑖 . For 𝑛 = 𝑝 = 0
−𝑛𝑖2 −𝑛𝑖
𝑅=𝜏 =𝜏
𝑝𝑂 𝑛𝑖 +𝜏𝑛𝑂 𝑛𝑖 𝑝𝑂 +𝜏𝑛𝑂

b) We had defined the net generation rate as


𝑔 − 𝑅 = 𝑔𝑜 + 𝑔′ − (𝑅𝑜 + 𝑅 ′ )

where 𝑔𝑜 = 𝑅𝑜 since these are the thermal equilibrium generation and recombination
rates.
−𝑛𝑖
If 𝑔′ = 0, then 𝑔 − 𝑅 = −𝑅′ and 𝑅 ′ = 𝜏
𝑝𝑂 +𝜏𝑛𝑂

𝑛𝑖
so that 𝑔 − 𝑅 = + 𝜏
𝑝𝑂 +𝜏𝑛𝑂

Thus, a negative recombination rate implies a net positive generation rate

Q6)

Answer:

We have that
𝐶𝑛 𝐶𝑝 𝑁𝑡 (𝑛𝑝−𝑛𝑖2 ) (𝑛𝑝−𝑛𝑖2 )
𝑅=𝐶 ′ )+𝐶 (𝑝+𝑝′ ) =𝜏
𝑛 (𝑛+𝑛 𝑝 𝑝𝑂 (𝑛+𝑛𝑖 )+𝜏𝑛𝑂 (𝑝+𝑛𝑖 )

If 𝑛 = 𝑛𝑜 + 𝛿𝑛 and 𝑝 = 𝑝𝑜 + 𝛿𝑛, then


(𝑛𝑜 +𝛿𝑛)(𝑝𝑜+𝛿𝑛)−𝑛𝑖2 𝑛𝑜 𝑝𝑜 +𝛿𝑛(𝑛𝑜 +𝑝𝑜 )+(𝛿𝑛)2 −𝑛𝑖2
𝑅=𝜏 =𝜏
𝑝𝑂 (𝑛𝑜 +𝛿𝑛+𝑛𝑖 )+𝜏𝑛𝑂 (𝑝𝑜 +𝛿𝑛+𝑛𝑖 ) 𝑝𝑂 (𝑛𝑜 +𝛿𝑛+𝑛𝑖 )+𝜏𝑛𝑂 (𝑝𝑜 +𝛿𝑛+𝑛𝑖 )

If 𝛿𝑛 << 𝑛𝑖 , we can neglect (𝛿𝑛)2 : also


𝑛𝑜 𝑝𝑜 = 𝑛𝑖2

Then
𝛿𝑛(𝑛𝑜 +𝑝𝑜 )
𝑅=𝜏
𝑝𝑂 𝑜 +𝑛𝑖 )+𝜏𝑛𝑂 (𝑝𝑜 +𝑛𝑖 )
(𝑛

(a) For n-type; 𝑛𝑜 >> 𝑝𝑂 , 𝑛𝑜 >> 𝑛𝑖


Then
𝑅 1
𝛿𝑛
=𝜏 = 10+7 s−1
𝑝𝑂

(b) For intrinsic, 𝑛𝑜 = 𝑝𝑜 = 𝑛𝑖


Then
𝑅 2𝑛𝑖 𝑅 1 1 𝑅
=𝜏 =𝜏 = 10−7 +5×10−7 ⇒ = 1.67 × 10+6s−1
𝛿𝑛 𝑝𝑂 (2𝑛𝑖 )+𝜏𝑛𝑂 (2𝑛𝑖 ) 𝛿𝑛 𝑝𝑂 +𝜏𝑛𝑂 𝛿𝑛

(c) For p-type; 𝑝𝑜 >> 𝑛𝑜 , 𝑝𝑜 >> 𝑛𝑖


Then
𝑅 1 1
𝛿𝑛
=𝜏 = 5×10−7 = 2 × 10+6s−1
𝑛𝑂

Part III Surface Effects


Q7)

Answer:

(a) From Equation (6.56)


𝑑 2 (𝛿𝑝) 𝛿𝑝
𝐷𝑝 𝑑𝑥 2
+ 𝑔′ − 𝜏 =0
𝑝𝑂

Solution is of the form


−𝑥 +𝑥
𝛿𝑝 = 𝑔′ 𝜏𝑝𝑂 + 𝐴 𝑒𝑥𝑝 ( 𝐿 ) + 𝐵 𝑒𝑥𝑝 ( 𝐿 )
𝑝 𝑝

At 𝑥 = +∞, 𝛿𝑝 = 𝑔′ 𝜏𝑝𝑂 so that 𝐵 = 0,


−𝑥
𝛿𝑝 = 𝑔′ 𝜏𝑝𝑂 + 𝐴 𝑒𝑥𝑝 ( 𝐿 )
𝑝

We have
𝑑(𝛿𝑝)
𝐷𝑝 |𝑥 = 0 = 𝑠(𝛿𝑝)|𝑥 = 0
𝑑𝑥

We can write
𝑑(𝛿𝑝) −𝐴
|𝑥 =0= and (𝛿𝑝)|𝑥 = 0 = 𝑔′ 𝜏𝑝𝑂 + 𝐴
𝑑𝑥 𝐿𝑝

−𝐴𝐷𝑝
𝐿𝑝
= 𝑠(𝑔′ 𝜏𝑝𝑂 + 𝐴)

Solving for 𝐴, we find


−𝑠𝑔′ 𝜏𝑝𝑂
𝐴= 𝐷𝑝
+𝑠
𝐿𝑝

The excess concentration is then


𝑠 −𝑥
𝛿𝑝 = 𝑔′ 𝜏𝑝𝑂 [1 − ⋅ 𝑒𝑥𝑝 ( 𝐿 )]
(𝐷𝑝 ⁄𝐿𝑝 )+𝑠 𝑝

where

𝐿𝑝 = √𝐷𝑝 𝜏𝑝𝑂 = √(10)(10−7 ) = 10−3 cm

Now
𝑠 −𝑥 𝑠 −𝑥
𝛿𝑝 = (1021 )(10−7 ) × [1 − (10⁄10−3 )+𝑠 ⋅ 𝑒𝑥𝑝 ( 𝐿 )] 𝛿𝑝 = 1014 [1 − 104 +𝑠 ⋅ 𝑒𝑥𝑝 ( 𝐿 )]
𝑝 𝑝

(i) For 𝑠 = 0,

𝛿𝑝 = 1014cm−3

(ii) For 𝑠 = 2000cm/s,


−𝑥
𝛿𝑝 = 1014 [1 − 0.167 𝑒𝑥𝑝 ( 𝐿 )]
𝑝

(iii) For 𝑠 = ∞,
−𝑥
𝛿𝑝 = 1014 [1 − 𝑒𝑥𝑝 ( 𝐿 )]
𝑝

(b)

(i) For 𝑠 = 0,

𝛿𝑝(0) = 1014cm−3

(ii) For 𝑠 = 2000cm/s,

𝛿𝑝(0) = 0.833 × 1014cm−3


(iii) For 𝑠 = ∞,

𝛿𝑝(0) = 0

Part V general
Q8)

(a) GaAs:
𝑉 2
𝑅 = 𝐼 = 2×10−6 = 106 𝛺

L
R= and 𝛥𝜎 = 𝑒(𝜇𝑛 + 𝜇𝑝 )𝛿𝑝
( )A
𝛿𝑝 = 𝑔′ 𝜏𝑝0 = (1021 )(5 × 10−8 ) = 5 × 1013 cm−3

For 𝑁𝑑 = 1016 cm−3, from Figure 5.3,

 n  7000 cm 2 /V-s, 𝜇𝑝 ≅ 310cm 2 /V-s

𝛥𝜎 = (1.6 × 10−19 )(7000 + 310)(5 × 1013 )


= 0.05848 (𝛺 -cm)−1

Let 𝑊 = 20𝜇m

Then 𝐴 = 𝑊𝑑 = (20 × 10−4 )(4 × 10−4 )

= 80 × 10−8 cm 2
𝐿
So 𝑅 = 106 = (0.05848)(80×10−8 )

Which yields 𝐿 = 4.68 × 10−2cm

(b) Silicon:
𝑅 = 106 𝛺, 𝛿𝑝 = 5 × 1013cm−3

For 𝑁𝑑 = 1016cm−3, from Figure 5.3,

𝜇𝑛 ≅ 1300cm 2 /V-s, 𝜇𝑝 ≅ 410cm 2 /V-s

𝛥𝜎 = (1.6 × 10−19 )(1300 + 410)(5 × 1013 )


= 0.01368 (𝛺 -cm)−1

Let 𝑊 = 20𝜇m

Then 𝐴 = 𝑊𝑑 = (20 × 10−4 )(4 × 10−4 )


= 80 × 10−8cm 2
𝐿
So 𝑅 = 106 = (0.01368)(80×10−8 )

Which yields 𝐿 = 1.09 × 10−2cm

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