Mosfet e
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AgnathavasiMosfet e
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AgnathavasiMOSFET
i. What is MOSFET?
-> MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. It is
a Field Effect Transistor with MOS structure.
-> The main semiconductor n- or p-channel is electrically insulated by a thin
layer of SiO2, to isolate the controlling of Gate terminal that increases the input
resistance of MOSFET to high value.
-> MOSFET have high input impedance as compared to FET due to SiO2 layer.
MOSFET is improved version of FET and also known as IGFET [Insulated Gate Field
Effect Transistor].
-> MOSFET has 4 terminals: Drain, Source, Gate and Body. In practical circuits,
MOSFET is used by connecting 3 terminals Gate, Source and Drain while the
substrate /Body is connected to Source.
ii. Types
MOSFET are of 2 types:-
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a) ENHANCEMENT MODE – By default, the MOSFET is OFF and the voltage across
gate terminal is applied (Vgs > Vt) to turn ON the transistor. Most commonly
used from power perspective.
b) DEPLETION MODE – By default, the MOSFET is ON and the voltage across gate
terminal is applied to turn OFF the transistor.
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iii. Working
-> MOSFET is a voltage controlled device, i.e the voltage is applied across the
gate terminal to control the flow between the Source and the Drain terminals.
-> The Gate voltage controls the electrons present in the channel. If a negative
voltage is applied then hole channel will start to form under the oxide layer in
PMOS. If a positive voltage is applied across gate then electrons will flow in the
channel and is formed under the oxide layer in NMOS.
iv. Advantage of MOSFET over BJT
MOSFET BJT
It is a voltage controlled device. It is a current controlled device.
Input resistance is high. Input resistance is low.
High Switching speed. Lower switching speed.
Easy to drive because it is easier to Hard to drive.
supply a constant voltage than
constant current.
The Power consumed by MOSFET is The Power consumed by BJT is more.
less than BJT.
Suitable for high power applications Suitable for low power applications
E.g. Power supplies. e.g. Oscillators, amplifiers
v. Conclusion
-> MOSFET operate at greater efficiency at lower voltages.
-> Absence of gate current results in high input impedance producing high
switching speed.
-> Power MOSFET is most common in semiconductor device in the world due
to its low gate drive power, fast switching speed, easy drive, simple biasing.
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