Design and Performance Analysis of Ultra Wideband LNA for

Wireless Medical Telemetry

Thesis

Submitted in partial fulfillment of the requirements for the degree of

MASTER OF TECHNOLOGY

in

VLSI Design

by

ARUNIT RAJ

(Reg No: 2120315)

DEPARTMENT OF ELECTRONICS & COMMUNICATION

ENGINEERING

NATIONAL INSTITUTE OF TECHNOLOGY KARNATAKA

SURATHKAL, MANGALORE - 575025

May, 2023
Design and Performance Analysis of Ultra Wideband
LNA for Wireless Medical Telemetry

Thesis

Submitted in partial fulfillment of the requirements for the degree

of

MASTER OF TECHNOLOGY

in

VLSI Design

by

ARUNIT RAJ

under the guidance of

Dr. Sandeep Kumar

DEPARTMENT OF ELECTRONICS & COMMUNICATION

ENGINEERING
NATIONAL INSTITUTE OF TECHNOLOGY KARNATAKA
SURATHKAL, MANGALORE - 575025
 DECLARATION

I hereby declare that the Project entitled Design and Performance Analysis of
Ultra Wideband LNA for Wireless Medical Telemetry which is being submitted to
National Institute of Technology Karnataka, Surathkal in partial fulfillment of the
requirements for the award of the Degree of Master of Technology in VLSI design in
the department of Electronics and Communication Engineering, is a bonafide report of
the research work carried out by me. The material contained in this report has not been
submitted to any University or Institution for the award of any degree.

Arunit Raj
Reg. No: 2120315
Roll. No: 212VL003
Department of Electronics and Communication Engineering

Place: NITK, Surathkal.

Date: May 2023
' $

CERTIFICATE

This is to certify that the M.Tech Project Work Report entitled Design and Perfor-
mance Analysis of Ultra Wideband LNA for Wireless Medical Telemetry submit-
ted by Arunit Raj (Reg. no. - 2120315) as a record of the work carried out by him,
is accepted as the M.Tech Project Work Report submission in partial fulfillment of the
requirements for the award of the degree of Master of Technology in VLSI Design in
the department of Electronics and Communication Engineering at National Institute of
Technology Karnataka, Surathkal during the academic year 2022-2023.

Project Supervisor DPGC Chairman

Dr. Sandeep Kumar Dr. Shekar V. Shet

Professor Head of Department
Department of E & C Engineering Department of E & C Engineering
NIT Karnataka, Surathkal NIT Karnataka, Surathkal

& %
 ACKNOWLEDGMENTS
I take this opportunity to thank my project guide, Dr. Sandeep Kumar, for his guid-
ance and support throughout this project. He has been patient and approachable when
I needed his support and this has helped me in correcting my mistakes and complete
the project on time. I express my gratitude to Mr. Kunal Kumar for familiarizing me
with the Cadence Virtuoso tool. I extend my thanks to Dr. Ratnamala Rao, for pro-
viding me the access to CADENCE VIRTUOSO tool. A warm thanks to Dr. Ashvini
Chaturvedi, Head, Department of Electronics and Communication Engineering, NITK,
for giving me an opportunity to improve my knowledge by working on this project.
I would also like to thank all teaching and non-teaching staff in the Department of
Electronics and Communication Engineering, NITK, for providing a good learning at-
mosphere at NITK.
I would like to express my deepest gratitude to my wonderful parents Tarun K. Tiwary
and Kiran Tiwary for their continuous love, inspiration and support throughout my life.
I could feel their supportive presence in every single moment of these two years. Thank
you from the bottom of my heart. At last but not the least I would like to thank the
Almighty God and my parents to keep me strong and motivated throughout the process.

Arunit Raj
Reg. No: 2120315
Department of Electronics and Communication Engineering
 ABSTRACT
This research work revolves around the designing of one-ended low noise amplifiers
(LNAs) along with it we’ll focus on it’s implementation in wireless medical teleme-
try field. Ultra-wideband (UWB) communication is a radio frequency technique that
only needs a small amount of energy to communicate across short distances. UWB
transmissions avoid interfering with other narrow band and continuous carrier wave
transmissions that operate in the same frequency range. How to develop a low-noise
amplifier for the UWB receiver will be thoroughly discussed in the paper.
Using radio frequency (RF) transmission, wireless medical telemetry is often used to
track a patient’s vital signs, such as pulse and breathing. The benefit of these gadgets
is that they let patients walk around without limiting them to a hardwired connection
to a bedside monitor.Ultra Wide Band (UWB) wireless communications, a developing
technology, provides a fundamentally fresh perspective on wireless technology, than
traditional lesser band systems, and generates significant interest in study. Due to this,
there are a lot of UWB applications that may be studied. The field of medicine is one
of the applications that has promise. UWB is ideally suited for the medical industry
thanks to a few special properties.
A UWB LNA has to have strong input impedance matching, a lesser noise figure (NF),
and a wide frequency range while using little energy. As a result, compromise between
NF, forward gain, sufficient bandwidth, linearity, and power dissipation frequently oc-
cur during the design of the LNA. we have used PMOS capacitance (pMOS Cap) instead
of normal capacitance so that we can bring more practicality to our design.
While designing LNA most of the performance metrics has been kept in mind like, in-
put return loss (S11 ), output return loss (S22 ), forward gain (S21 ), third order intercept
(IIP3). This project utilised the 180nm technology, and the technology files and com-
ponent models were provided by gpdk. The simulation tool utilised in this project is
CADENCE VIRTUOSO. Lastly, the Assura option has been used to validate the lay-
out. DRC requirements, parasitic extraction rules, LVS rules, and design guidelines for
the 180nm CMOS process were all followed.

i
Nomenclature

SYMBOL MEANING
γ Excess drain noise coefficient
δ Excess gate noise coefficient
Q Quality Factor
K Constant
T Temperature
f Frequency
ω Angular frequency
gm Transconductance
c Noise correlation coefficient between gate and drain
ft transition frequency
k Kilo
µ Micro
Noise current spectral
i2n
Density
Cox Gate oxide capacitance
gdo gdo
α Constant

ix
Abbreviations

ABBREVIATION EXPANSION
BSF Band Select Filter
BW Bandwidth
CG Common Gate
Complementary Metal
CMOS
Oxide Semiconductor
CS Common Source
FoM Figure of Merit
Generic Process
GPDK
Design Kit
IF Intermediate Frequency
IIP Input Intercept Point
IM Inter Modulation
IRF Image Rejection Filter
LNA Low Noise Amplifier
LO Local Oscillator
LPF Low Pass Filter
Nf Noise factor
NF Noise Figure
OIP Output Intercept Point
RF Radio Frequency
SNR Signal to Noise Ratio
UWB Ultra Wide Band
WSN Wireless Sensor Network

xi
 Table 1.1: LNA Design Parameter and Specification

Parameter Specification
Operating frequency band 2 - 6 GHz
Forward gain (S21 ) ≥ 10 dB
Return loss (input) (S11 ) ≤ - 10 dB
Return loss (output) (S22 ) ≤ - 10 dB
Noise Figure (NF) ≤ - 3.5 dB
Process gpdk 180 nm
Topology cascode inductive degeneration
Stability Factor should be unconditionally stable

tors, creating ICs for Low Noise Amplifier having maximum gain, minimal disturbance
(from interference), and good input matching for impedance is of primary importance.
LNA should also be the least responsive to return losses and be unconditionally stable.
Chapter 2 belongs to topic description which basically deals with the LNA application.
In this section first we have discuss different typical type of receivers and after that we
shifted our focus to understanding UWB LNA applications Medical telemetry.
Chapter 3 belongs to Literature Review which contains different research paper discus-
sion along with we have discussed research gap and design methodology. Also provides
background information and a description of performance criteria, such as noise figure,
intercept point (input/ouput), two port parameters (S-parameter), and dynamic range,
that are used to evaluate RF design.
Chapter 4 contains detailed discussion of some commonly used Wide Band LNA
topologies and their fundamentals.
Chapter 5 deals with the proposed circuit detailed explanation with all the design cal-
culations. Overall this chapter covers the complete LNA design and methodology part
of this project.
Chapter 6 named as results and discussions. This contains pre layout simulation wave-
forms and contains layout and post layout simulations waveform. Also in this section
we have compared our work with previously published work.
Chapter 7 deals with the conclusion and future work.

5
as blood pressure, body temperature, heart rate, etc. The patient unit receives these
parameters electronically before the patient. The patient unit receives these parameters

Nurse Unit

Transceiver

RF

Transceiver

RF
SENSOR 1

RF WSN

SENSOR 2 PATIENT UNIT DOCTOR UNIT

RF
SENSOR 3

WSN

Medical
Dispensing
Unit

Figure 2.6: Health Care Monitoring System.

electronically, to transmit those data to physician over WSN. The medical professional
would return his prescription to the patient unit. The nursing unit will receive a notice
if the condition is critical so they may assist the patient. The right medication would
dispense from each home’s medicine dispensing box in accordance with the doctor’s
prescription.

2.4.1 UWB help in Medical Application

It is obvious that pulse wave generated of UWB frequency range is of few nanoseconds
time period. As a result, its spectrum is below the permitted noise level. Using lower
UWB spectrum (upto 6 GHz) and full UWB spectrum (3.1 - 10.6 GHz) this functional-

12
ity, Gbps speed is made achievable. UWB may therefore be utilised in close distances
under ultra high speed range. In these scenarios noise-like phenomena comes into exis-
tence and can function at baseband frequencies without the need for IF processing. This
UWB function has long been regarded as one of the most beneficial aspects of medical
engineering. Following are the UWB features as discussed below in detail.

• Passing through obstacles with ease

• Highly precise range

• Lesser radiation through EM waves

• Lesser energy consumption

Now we will discuss each and every above stated features with detailed explanation

Penetrating through obstacles

We could contrast UWB with ultrasonography when describing this capacity. UWB
differs from ultrasound, having great scope in the field of application in the modern
world, despite the fact that they are actually extremely common, also there are many
methods which uses UWB frequency range for processing signals. The main difference
between ultrasound and UWB range is that ultrasound works on line of sight (LoS)
technology having very small range, typically few inches but UWB has more higher
frequency bandwidth and more travelling range as well. The fact that UWB employs
RF pulses and has high gain allows it to achieve gains that are far higher than those of
other widely used conventional spread spectrum systems. This shows how for UWB
obstacles are not a barrier. Due to this reason, UWB can be used in scenarios where
hindrance or obstacles are likely to be present, even ultrasonography is not practical
there. These features of UWB makes it very suitable to capture human organs from
inside.

Highly precise UWB ranging application

UWB technology has made it feasible to locate objects with centimeter-level accuracy.
This is due to the fact that UWB technology employs sub-nanosecond pulses for trans-

13
Chapter 3

Literature Review and Fundamentals of LNA

CMOS technology, which takes the advantages of both NMOS and PMOS tran-
sistors in a circuital network is one of the most widely used MOSFET (Metal Oxide
Semiconductor Field Effect Transistor) technologies currently on the market. CMOS
technology excels rival technologies in terms of few parameters such as, total cost, high
immune to noise, and negligible static consumption of power and is commonly used for
the construction of interface integrated circuits. The bulk of contemporary integrated
circuit makers have selected the CMOS process as a result of this advantage’s growth
and increasing importance. varied CMOS process technologies have varied minimum
transistor channel lengths, such as 0.35 mm, 0.18 mm, and 0.13 mm. The transistors in
this project have a minimum length of 0.18 mm and were manufactured using the gpdk
CMOS manufacturing technology.
The growing body of research on ultra-wideband (UWB) systems has increased inter-
est in broadband low noise amplifier (LNA) design. In The low noise amplifier is an
essential part of many RF and microwave-related systems, including communication
over any channels, different levels of mobile networks, tunning equipments, system
used for phase matching, and others. Broadband LNAs must have good input match-
ing, low noise figure (NF), and low power consumption over several GHz of bandwidth
(BW). Trade-offs between NF, gain, enough bandwidth, linearity, and power consump-
tion therefore commonly happen during the design of the LNA.

17
 START

NO Simulation
Device Selection
Satisfied ?
RF Transistor

YES

Design and
Generate Layout
Analysis of mid
for the designed
UWB Low Noise
LNA
Amplifier

NO

Verification of
Analysis DRC and LVS
Satisfied ? analysis

YES
YES

Meet the LNA NO

parametrics like
Analysis
S11, S21, NF, S22,
Satisfied ?
Kf,

YES

Simulation of the
LNA END
(Optimization)

Figure 3.2: Flow Chart of Proposed Work.

competing features while minimising the influence of external factors. Trade-offs at

the device level are influenced by transistor shape, process technology, and packaging

22
 where,
In saturation for long channel MOS devices γ can be taken as 23 , gdo is drain
conductance when biasing is absent.

• Flicker Noise
Flicker noise is introduced into the drain current as charge carriers travel at the
interface due to charge stuck at different energy levels. This noise may differ
from one process to another depending on the contaminants at the oxide-silicon
contact. For CS amplifiers flicker noise models across drain and source terminal
an it is expressed as,

i2n f K f g2m
= (3.3)
∆f f CoxW L

where,
K f → a constant factor, W, L → effective MOSFET width and length, gm →
transconductance of transistor in saturation, K f for PMOS is lower than NMOS.
As a result, flicker noise incurred in PMOS device is less than NMOS. Flicker
1
noise also called as f noise as it has inverse relation with frequency.

• MOSFET Gate Induced Thermal Noise

Due to capacitive coupling, the inversion region present in gate channel will lead
to gate current to be noisy in nature.

i2ng
= 4kT δ gg (3.4)
∆f

where,

w2 ∗Cgs
2
gg = (3.5)
5gdo

• 1/f Noise in MOS Transistors

All types of devices, including semiconductor devices, homogeneous metal sheet
resistors, various types of resistors, and even chemically concentrated cells, have

25
 i2ndg i2 1
= nd 1 − 2|c|Xd + (4Q2 + 1)Xd2 (2.13)
∆f ∆f 4

The output noise due to the input source is given as

2
i2nout = gm Qin 2
vnR S
(2.14)

The alternate denition ofVdd

noise factor is Vdd

RS =RT=R RL
RL Tvotal output noise power vout
Nf = out (2.15)
Output noise due to input source
RS MCG
MCS
Now the noise factor of IDCS stage is given as
vin
RT R
S
vin 2
Vbias −
+ 2
vnR + i2ndg /∆f
gm Qin
S
N fV= +
bias −

2 2
gm Qin vnR
 (a)    (b) S
 (2.16)
ω0 gd0 1 2 2
=1+ γ 1 − 2|c|Xd + (4Qin + 1)Xd
Figure 3.5: (a) ωt
Common gm
source 2Qin
topology (b) Common gate topology. }
|
Figure 2.4: (a) Common source topology{z(b) Common gate topology.
Noise scaling factor

side, common gate topology is shown in Figure 2.4b and the noise factor is analytically
iout
expressed as
γ 1
RS NLfg = 1 +
Mα g R
1 m S (2.9)
γ 1
vin ⇒ N f = 1 + α (∵ g = RS )
m
Ldeg
This topology oers bias V +
impedance matching without using a resistor. The noise
−
factor of CG topology is better than resistive terminated CS, but degrades at higher

frequencies. However, this may be acceptable for wide-band ampliers and can be
Figure 3.6: Inductive degeneration common source topology.
improved for narrow-band using inductors. The inductive degenerated CS topology
Figure 2.5: Inductive degeneration common source topology.
is shown in Figure 2.5. It oers good impedance matching without using physical

resistor. The total drain noise current can be expressed as (Perrott (2006))
23
Noise Figure  
i2ndg i2nd 2 2 2
= |η| + 2Re{cXd + Zgsw } + Xd |Zgsw | (2.10)
∆f ∆f
 
As where
the signali2nd travels through the receivergfront-end,
∆f
= 4kT γgd0 , η = 1 − Zdeg +Zg , Zsignal
m Zdeg to noise ratio (SNR) deterio-
g = RS + jωLg , Zdeg = jωLdeg , Xd =
ration q
is measured by noise1figureZ(NF). Harold Friis used mathematics to define signal
gm δ deg +Zg
gd0 5γ
and Zgsw =
jωCgs
k 1+gm Zdeg
.
to noise ratio (input and output) for Noise factor (Nf).
The additional inductor (Lg ) gives freedom to set resonance frequency (ω0 ) and
The Nf can be expressed as
Zin independently. For 180 nm technology, SNRi/p(2.10) can be written as
Nf = (3.8)
2  SNRo/p 
indg 2
ind 2 ∗ 2 2
Another equation for ∆f Nf is= ∆f |η| + 2Re{−j|c|Xd Zgsw } + Xd |Zgsw | (2.11)

Psig /P22
nRs
Nf = (3.9)
SNRo/p

27
where Psig is power for input and PnRs represents the noise power for Rs with respect to
bandwidth. It can be stated as,

Psig = PnRs × N f × SNRo/p (3.10)

where the bandwidth B is. The lower limit of dynamic range is determined by a system’s
noise performance. Noise figure (NF) is the term used to describe the Nf, which is often
expressed in decibels (dB).
NF = 10 log10 (N f ) (3.11)

NF can be specified for both the entire receiver and each block. For instance, NFLNA
establishes the LNA’s inherent noise, which while amplifying get added to the actual
signal. As a result, the first stage’s gain and noise factor determine the receiver’s overall
noise performance. As LNA is very important part of receiver so we have to care LNA
characteristics like good gain, less noise figure, better impedance matching.

3.4.3 Sensitivity

Sensitivity is the measure of device (here LNA/receiver) which tells us that how much
low stimuli the device can detect as its input by giving appropriate output. For LNA
appropriate output is when we have as low as possible signal to noise ratio, as it is must
property to be called as a good receiver. In equation for Psen (dBm) it can be written as,

Psen = −174(dBm/Hz) + NF(dB) + SNRo/p,min (dB) + 10 log10 BW (3.12)

where,
SNRo/p,min is minimum signal to noise ratio (dB) at output level of amplifier.

3.4.4 Distortion and intermodulation

Changing the original waveform is distortion. The input and output frequencies of a
linear device are identical; no new frequencies are produced. Only amplitude and phase
change are present in the output signal. The output of a nonlinear device could have

28
and the possibility of harming the circuit during these tests suggest the use of an

alternative solution to characterize the network at high frequencies as given in Collin

(1993). One popular solution is the introduction of the S-parameters (S-refers to

scattering), which denes the four variables as the incident (reected) input (output)

voltage (or power) waves.

Ei1 Er2
Z0 Z0
+ +
Two port
Er1 network
Ei2
_ _

Figure
Figure3.9: S-parametersdefinition
2.8:S-parameters denitionofoftwo
twoport
portnetworks.
networks.

The denition of S-parameters exploits the fact that a transmission line terminated
Z is the impedance of the source and load terminations and Ei and Er1 are the mag-
at oits characteristic impedance does not reect any power 1at its termination (Lee

nitudes of
(2004)). Tothe incident
show and reflected
the usefulness voltage
of this waves,consider
property, respectively. This will
the block demonstrate
diagram of a two-

port network
the utility shown
of this Fig. The
feature. where Zo is
2.8,coefficients of the impedance of
the S-parameter arethe source
written as, and the load
terminations and Ei1 and Er1 are the magnitudes of incident and reected voltage

waves, respectively. The S-parameter coecients are expressed as:

b1 = S11 a1 + S12 a2 ,
(3.16)
b12 = SS21
11aa11 +
+SS2212aa22 (2.27)

where b2 = S21 a1 + S22 a2 (2.28)

Ei1 Ei2 Er1 Er2

where a1 = √ , a2 = √ , b1 = √ and b2 = √
Z0 Ei1 Z Ei2Z Er1 Z Er2
a1 = √ , 0 a2 = √ ,0 b1 = √ , 0 b2 = √
The normalization to Zo of Zo makes
Zothe square root Zo the square Zoof magnitude of ai
and bi equal to the incident and reected power at both ports. Now, if we terminate

second port with Zo , which sets a2 equal to zero, and apply a power source to port
The incident and reflected quantity of transmission line can be calculated as the magni-
one, we obtain the following relations:
tude square of ai and bi to the square root of Zo . Now, if we apply power to first port
b1 E
and terminate the port 2 with Zo ,Swhich
11 = puts a2= = 0r1, we get the relationships shown
(2.29)
a1 a2 =0 Ei1
below:
28

a1 Er1
S11 = = (3.17)
b1 a2 =0 Ei1

b2 Er2
S21 = = (3.18)
a1 a2 =0 Ei1

Where S11 is a useful indicator of the LNA’s impedance setting at input, S21 denotes the
amplifier’s forward gain. On the other side, the following relationships exist if first port

32
3.4.7 Stability

For some combinations of source and load impedances, the circuit may become unstable
if there are feedback routes from the output to the input. At the maximum voltage
fluctuations, a typically stable LNA design may oscillate.Therefore, stability is a key
issue with RF amplifiers. It goes without saying that an LNA may turn into an oscillator
if the performance of the circuit is unsteady. The designer should check the stability of
the circuit after creating it. A so-called stability factor may be used to measure how
stable an amplifier is. The stern stability factor shown in the following equation serves
as a measure of a circuit’s stability.

1 − |S21 |2 |S11 |2 + B21 f

K= (3.22)
2 × |S12 S21 |

where, A different stability factor (in addition to K) called B1 f is a two-port quantity

that is computed from S-parameters. Mathematically,

B1 f = |S11 | |S22 | − |S21 | |S12 | (3.23)

If K is greater than 1 then the designed circuit is unconditionally stable, for that fre-
quency band.

34
Chapter 4

Wideband LNA Topologies and its

Fundamentals

Generally LNA can be designed with different topologies but here we will discuss those
topologies which can be served as Wideband Topologies. Below are few wideband
topologies which are explained in further sections.

1. Common Source Resistive termination

2. Common Gate topology

3. Feedback LNA topology

4. Cascode LNA design with Inductive source degeneration

4.1 Common Source Topology for LNA

Figure 4.1: CS with shunt resistance Rs

35
 Figure 4.5: Cascoded with CS degeneration LNA Topology.

The input impedance operates similarly to an RLC series circuit. The series circuit’s
resonant frequency has to be adjusted so that it coincides with the operational frequency.
You may achieve this by increasing the gate inductance Lg . The equation below gives
the predicted ideal noise figure is
    n√  o
2γ ωo √ p
Fopt = 1 + × × p |c| + p + 1 + p (4.10)
α ωT
where,
c = 0.4, α is approx 0.9, δ is (2-3) × α, γ is greater than 2 and less than 3, p is process
parameter for LNA.

39
 Table 5.2: Design components value of LNA

Components Values
R1 25 ohms
L1 2 nH
M1 5 pF
R2 1.25K ohms
M2 4 pF
R3 5K ohms
L3 150 pH
L2 3 nH
R4 5 ohms
R5 25 ohms
M3 1.5 pF
L4 200 pF

shunt-feedback topology’s 3-dB bandwidth may be determined via,

[1 + AV ]
ω−3dB =
(5.1)
RF Cgs + (1 + AV )Cgd

where Av is the amplifier’s open-loop gain, R f is a shunt feedback resistor, and Cgs and
Cgd are the input parasitic capacitances of the transistor. Wider -3dB bandwidth results
from larger Av and lower R f , as seen in the above equation. Smaller R f , however, is a
bad idea because of noise figure deterioration. Wider bandwidth and lower noise fig-
ure are therefore made possible by high Av . However, with CMOS technology, larger
Av necessitates a huge DC current due to low transconductance. For the purpose of
compensating the gain loss caused by the capacitive parasitics, we need a load with
high stability factor and zero impedance. The shunt resistive feedback LNA architec-
ture includes the shunt peaking bandwidth extension approach, which is then examined
utilising the cadence virtuoso spectre. In comparison to LNAs without shunt resistive
feedback, resistive feedback connected in shunt technique along with inductive degen-
eration LNA is prefferably more demanding for good wide frequency range as required
UWB receivers.

5.3 Design Calculations

Initially, an LNA for cascode inductive degeneration was created. Resistive feedback is
used to increase gain, noise figure (NF), and stability. For the UWB frequency range,
shunt resistive feedback is introduced and simulated. It has a decent gain, excellent NF,
and a consistent LNA in the lower UWB frequency range of 2 to 6 GHz. The formula

43
for the overall gain achieved with proposed feedback topology LNA is,

1
Voltage gain AV Rf
(5.2)
2 1 Rs

Also noise figure can be calculated as :

Rs 1
Noise Figure 1 1 2 (5.3)
Rf gm Rs gm R

Now we will discuss the calculation of components present in our design as this calcu-
lation will only shows the starting calculation of component values. Actual values used
in the simulation may differ because there we have reached in numerous iterations. [9]
First taken Value of Degenerated Inductor Ls : transition angular frequency is given by,

T 2 fT (5.4)

also
gm Rs
T (5.5)
Cgs Ls
So, Ls is now calculated as

Rs 50
Ls 1 2 nH (5.6)
T Ls T

Now moving to our next calculation i.e., optimal quality factor (Q) for a inductor,

1
QL P1 (5.7)
P

where, is 0.9 and P = 0.66 times of Also, P1 is given as,

2
P1 (5.8)
5

where, is between 2 & 3 and P is 2.5 Calculation gate side inductance Lg ,

Q L Rs
Lg Ls L (5.9)
o

Putting values from above written equation for Ls and Q we get Lg as,

Lg 2 nH (5.10)

44
Input Return Loss (S11 ), Output Return Loss (S22 ), Reverse Transmission Gain (S12 ),
Stability factor (K f ), and Noise Figure (NF) are all calculated using the sp analysis.
P1dB and IIP3 are produced by the pss analysis. So as pre layout simulation results
we can see that in Figure 6.2a forward gain S21 is greater than 10 dB for frequency
range of 2 – 9.7164 GHz and Input Return Loss (S11 ) is less than -10 dB for frequency
range of 3.4272 – 18.1671 GHz. Also, we can observe from Figure 6.2b that Reverse

(a) S11 & S12 (b) S12 & S22

(c) NF (dB) pre layout waveform

Figure 6.2: Pre layout waveforms for S parameters and NF

Transmission Gain (S12 ) and Output Return Loss (S22 ) is below -10 dB for frequency
range of all analyzed frequencies (for S12 ) and 2 – 3.5 GHz (for S22 ) respectively. In
the Figure 6.2c we can see that Noise Figure is less than 3.5 dB for frequency range of
2 – 6.5 GHz From noise figure waveform we can see that NFmin is coming out as 2.011
dB at frequency of 2 GHz.

48
 (a) layout of single transistor

(b) transistor layout with multiplier

Figure 6.5: Layout of transistor with and without multiplier

Figure 6.6: DRC and LVS window from assura tool of cadence

51
 Bio-data

Name : ARUNIT RAJ

Address : Ashiyana Digha road,

Ramnagri, Rajiv Nagar Thana,
Patna, Bihar
800025 India.
Educational
Qualif i cations:
M.Tech VLSI Design, Dept. of ECE
National Institute of Technology Karnataka,
Surathkal
Year: 2021-2023

B.Tech Electrical and Electronics Engineering,

LNCT Bhopal, Madhya Pradesh
Year: 2016-2020

Internship : 6 Months
AMD India Pvt. Ltd.
July 2022 to Dec 2022

Mobile No. : (+91)7782801141

Email ID : [email protected]
 Thesis
by Arunit Raj

Submission date: 16-May-2023 04:19PM (UTC+0530)

Submission ID: 2094541262
File name: MajorProject_212VL003_for_review_4_1.docx (3.42M)
Word count: 12175
Character count: 59992
Thesis
ORIGINALITY REPORT

6 %
SIMILARITY INDEX
5%
INTERNET SOURCES
3%
PUBLICATIONS
3%
STUDENT PAPERS

PRIMARY SOURCES

1
idr.nitk.ac.in
Internet Source 2%
2
Submitted to National Institute of Technology
Karnataka Surathkal
1%
Student Paper

3
Qing Guo, Yuting Chen, Xianliang Wu. "Design
of Miniaturized UWB Low Noise Amplifier
<1 %
Based on 65nm CMOS Technology", 2021
Photonics & Electromagnetics Research
Symposium (PIERS), 2021
Publication

4
K B Athira, B Prameela. "Ultra wideband low
noise amplifier with resistive feedback and
<1 %
shunt inductive peaking", 2017 International
Conference on Innovations in Information,
Embedded and Communication Systems
(ICIIECS), 2017
Publication

5
theses.hal.science
Internet Source <1 %
6
J. M. Wu, N. K. Yang, S. C. Li. "A low power
WiMAX LNA with noise cancellation", 2008
<1 %
Third International Conference on
Communications and Networking in China,
2008
Publication

7
Submitted to Sheffield Hallam University
Student Paper <1 %
8
Saman Asgaran, M. Jamal Deen, Chih-Hung
Chen. "Design of the Input Matching Network
<1 %
of RF CMOS LNAs for Low-Power Operation",
IEEE Transactions on Circuits and Systems I:
Regular Papers, 2007
Publication

9
Submitted to Universiti Teknologi Malaysia
Student Paper <1 %
10
macsphere.mcmaster.ca
Internet Source <1 %
11
www.miteq.com
Internet Source <1 %
12
Mohammad Javad Zavarei, Mohammad
Taherzadeh-Sani. "Envelope-tracking
<1 %
common-drain CMOS power amplifier with a
switching-only supply modulator for LTE
applications", Microelectronics Journal, 2018
Publication
13
minghsiehece.usc.edu
Internet Source <1 %
14
smartech.gatech.edu
Internet Source <1 %
15
Arthur Nieuwoudt, Tamer Ragheb, Yehia
Massoud. "Hierarchical Optimization
<1 %
Methodology for Wideband Low Noise
Amplifiers", 2007 Asia and South Pacific
Design Automation Conference, 2007
Publication

16
Submitted to UT, Dallas
Student Paper <1 %
17
patents.justia.com
Internet Source <1 %
18
Submitted to Cardiff University
Student Paper <1 %
19
Md. Mahbub Reja, C. Sellathamby, Igor
Filanovsky. "A New CMOS 3.1-11.7 GHz Low
<1 %
Power LNA for Ultra-Wideband Wireless
Applications", 2007 IEEE International
Symposium on Circuits and Systems, 2007
Publication

20
Submitted to Universiti Teknikal Malaysia
Melaka
<1 %
Student Paper

repository.ntu.edu.sg
 <1 %
Internet Source
21

22
Biosystems & Biorobotics, 2015.
Publication <1 %
23
Shim, Jaemin, Taejun Yang, and Jichai Jeong.
"Design of low power CMOS ultra wide band
<1 %
low noise amplifier using noise canceling
technique", Microelectronics Journal, 2013.
Publication

24
Submitted to University of Newcastle
Student Paper <1 %
25
library.cuhk.edu.hk
Internet Source <1 %
26
Tamal Mukherjee. "Synthesis of a wideband
low noise amplifier", Proceedings of the 16th
<1 %
ACM Great Lakes symposium on VLSI -
GLSVLSI 06 GLSVLSI 06, 2006
Publication

27
hdl.handle.net
Internet Source <1 %
28
kar.kent.ac.uk
Internet Source <1 %
29
www.kosmix.com
Internet Source <1 %
30
www.lume.ufrgs.br
Internet Source
 <1 %

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