16optical Broadband Angular Selectivity
16optical Broadband Angular Selectivity
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Figs. S1 to S11
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under those circumstances, there is no reflection E with respect to the plane of incidence. When the performance of the material system. Exam-
at the interface at normal incidence because the Zi = Zt, the reflectivities for s- and p-polarized light ples of optimizations based on three different
two media are impedance-matched,
pffiffiffiffiffiffiffiffiwhere the im- become identical. In particular, the Brewster angle physical mechanisms are shown in fig. S3 (20).
pedance Z is defined as Z ¼ m=e. The off-axis is the same for both polarizations (qB = qi = qr = To show the feasibility of the method described
reflectivity can be calculated directly from the 0°). As a proof of principle, we plot the band dia- above, we present an experimental realization for
generalized Fresnel equations (8): gram of a quarter-wave stack with e1 = m1 = 1 and the e1 ≠ e2, m1 = m2 = 1 case. The sample was
e2 = m2 = 2 in Fig. 2C. As in the previous case, we fabricated with the bias target deposition (BTD)
Er
1
cos qi − 1 cos qt technique (25) at 4Wave Inc. using SiO2 (e1 ≈
¼ 1Z i Zt can broaden the band gaps by stacking quarter-
ð2Þ
Ei ⊥ cos qi þ 1 cos qt wave stacks with various periodicities together (Fig. 2.18, m1 = 1) and Ta2O5 (e2 ≈ 4.33, m2 = 1) on a
Zi Zt 2F); this approach gives rise to ultra-broadband 2 cm × 4 cm fused silica wafer (University Wafer
and angular selectivity at normal incidence for both Inc.). The sample consists of 84 layers in total
1
cos qi − 1 cos qt
polarizations (Fig. 2H). (Fig. 2E). There are six bilayer stacks (m = 6),
Er
¼ 1Z t Zi ð3Þ Other than using photonic band gaps to re- each bilayer stack consisting of seven bilayers
Ei ∥ cos qi þ 1 cos qt move unwanted extended modes, there might (n = 7), with the thicknesses of each layer equal in
Zi Zt
exist even more optimized ways to forbid light a given stack. The periodicities of the six bilayer
where the subscripts i and r denote incident light from propagating in unwanted directions: The stacks form a geometric series with ai = a0r i–1 for
and reflected light, respectively, and the subscripts narrowness of angular selectivity can be optimized the ith stack, where a0 = 140 nm and r = 1.165.
⊥ and || indicate the direction of the electric field using numerical tools (17, 24) to further enhance For index-matching purposes, the whole sample
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