Compact Broadband Rectifier With Wide Input Power Range

Based on Adaptive Input Power Distribution

This paper was downloaded from TechRxiv (https://www.techrxiv.org).

LICENSE

CC BY 4.0

SUBMISSION DATE / POSTED DATE

10-04-2022 / 13-04-2022

CITATION

Liu, Xin; Li, Yingsong; Zhang, Dawei (2022): Compact Broadband Rectifier With Wide Input Power Range
Based on Adaptive Input Power Distribution. TechRxiv. Preprint.
https://doi.org/10.36227/techrxiv.19561684.v1

DOI

10.36227/techrxiv.19561684.v1
Page 1 of 9

1
2
3
4
Compact Broadband Rectifier With Wide Input
5
6 Power Range Based on Adaptive Input Power
7
8 Distribution
9
10 Xin Liu, Yingsong Li, IEEE Senior Member, Dawei Zhang, IEEE Member
11
12
Abstract—This paper presents a novel compact rectifier array harvested [9]-[12]. Several works have been done for these
13 with both broadband and wide input power range characteristics. applications. For instance, [11] introduced a non-uniform
14 The rectifier array consists of two rectifier units operating at low- transmission line to achieve one octave bandwidth. In [12], a
15 power and high-power levels, respectively, and an adaptive input
16 power distribution network (AIPDN) enabling automatic High-power
17 distribution of radio frequency (RF) energy at different power unit A

18 levels. In addition, a matching inductance is introduced to Zin2

L1
counteract the capacitance of the diode. As a result, the high RF-
19 DC power conversion efficiency (PCE) is achieved in both
ZinA Zin5 Zin4 Zin3
HSMS CL1 RL1
20 broadband and wide input power range. For demonstration, a Z3 l3 Z2 l2 Z1 l1 282B

21 prototype of the presented rectifier array is fabricated and Zin LL1

Vout1
TL3 TL2 C1
22 measured. The measured results are in good accordance with the TL1
Zin1
23 simulated results. With an input power range of 8 – 25 dBm and Adaptive input power
distribution network
24 a bandwidth of 1.82 – 2.75 GHz (fractional bandwidth of 40.7%), (AIPDN)
Zin8 Zin6
RFin Low-power
the PCE is greater than 50%. At 2.4 GHz, the input power ranges
25 from -5.5 to 27.5 dBm with PCE greater than 50%. Besides, a
TL4 LL2
Vout2
unit B
26 peak PCE of 72.1% is obtained at an input power of 25 dBm.
Zg=50Ω
Z4 l4 C2
27 This work can lay the foundation for the development of a new HSMS
2860 CL2 RL2
28 RF energy harvest systems with wide frequency band and ZinB
L2
29 dynamic input power. Zin7
30
31 Index Terms—Broadband, wide input power range, RF
rectifier, RF energy harvest, wireless power transfer. Fig. 1. Schematic of the proposed rectifier array with AIPDN
32
33 coplanar waveguide (CPW) transmission line was used at an
I. INTRODUCTION
34 input power of 10 dBm and a bandwidth ranging from 0.1 to

O
35 WING to the rapid development of communication
2.5 GHz with a power conversion efficiency (PCE) over 45%.
36 technology, people’s living environment is full of
In addition, the power level of RF energy varies greatly in
37 electromagnetic (EM) waves [1]. If these EM
different environments [13]. Therefore, it is equally important
38 energies can be recovered locally, electronics can get rid of the
to design rectifiers that can operate over a wide input power
39 limitation of their lifetime being determined by the battery [2]-
range [13]-[15]. In the sequel, Shinohara et al. developed a
40 [4]. Thus, Radio frequency (RF) energy harvest has received a
sequential power delivery system in [14] to successfully
41 great deal of attention in scientific and industrial fields [5]-[6].
extend the input power range of the rectifier. [15] employs two
42 Nowadays, various RF energy harvest devices are also
diodes with different threshold voltages (Vr) and breakdown
43 required in medical, smart home and Unmanned Aerial
voltages (Vb) to achieve a wide input power range.
44 Vehicle (UAV) applications [7].
Although considerable ideas have been made in achieving
45 However, with the rise of Internet of Things (IOT) either broadband or wide input power for rectifiers, there are
46 technologies [8], more and more frequency bands are being still few results for achieving both characteristics
47 used in wireless communications, and EM energies are simultaneously. Hence, investigating rectifier that can operate
48 distributed more widely. Therefore, it is necessary to design over a broadband and wide input power range simultaneously
49 broadband rectifiers to maximize the energy that can be is a great challenge and of practical implications. In this case,
50 the PCE of the rectifier should maintain stable over the input
51 power and frequencies. Recently, several works have been
52 This work was supported in part by the Open Project of State Key
done to address the mentioned problems. In [16], [17], a
53 Laboratory of Millimeter Waves (K2020017).
second order branch-line coupler and a resistance compression
Xin Liu and Dawei Zhang are with the College of Information and
54 Communication Engineering, Harbin Engineering University, Harbin 150001, network (RCN) were used to improve the bandwidth and input
55 China. power range, respectively, achieving good results.
56 Yingsong Li is with the Key Laboratory of Intelligent Computing and
Nevertheless, both coupler and RCN would introduce
Signal Processing Ministry of Education, Anhui University, Hefei, Anhui,
57 China. ([email protected]) additional insertion losses, significantly increasing the
58
59
60
 Page 2 of 9

1 physical size of the rectifier and limiting the application of

2 these rectifiers. As a result, much effort has also been devoted The schematic diagram of the automatic power distribution
3 to eliminating circuit elements between the two sub-rectifiers. principle is shown in Fig. 2(a). The input power and input
4 In [18]-[20], automatic power configurations are employed. impedance at the rectifier array input ports are denoted as P in
5 Among them, [18] and [19] did not use matching networks, and Zin respectively. High-power rectifier unit A can provide
6
thus achieving a wide input power range only across a very power PinA and input impedance ZinA, while the Low-power
7
narrow bandwidth. Although [20] uses a matching network rectifier unit B is distributed with power P inB and input
8
over a wide input power range, the two sub-rectifiers impedance ZinB. Besides, two rectifier units are connected in
9
correspond to the low- and high-frequency bands respectively, parallel. The variation of the two rectifier units with the input
10
and the bandwidths of the two sub-rectifiers can only be power is shown in Fig. 2(b). Hence, the input power
11
connected at a specific input power level. distribution relationship between them can be described as
12
In this paper, a novel compact rectifier array with both Pin  PinA  PinB , (1)
13
broadband and wide input power range characteristics is
14 PinA Re( ZinB )
presented, simulated, fabricated, measured and analyzed in  . (2)
15 PinB Re( ZinA )
detail. The rectifier array consists of an adaptive input power
16 Based on the input impedances ZinA and ZinB of the two
distribution network (AIPDN) and two rectifier units. Without
17 rectifier units A and B, the input impedance Zin of the input
additional devices, the AIPDN acts as a broadband matching
18 port is expressed as
network for the two rectification units and automatically
19
distributes power to them at different input power levels. Z Z
20 Zin  inA inB . (3)
21
Moreover, two different diodes with different performances ZinA  ZinB
are adopted in the two rectifier units, corresponding to the
22 Moreover, for the ideal matching case, the input impedance
high- and low-power levels. Therefore, within the input power
23 Zin at the input port should be equal to the source impedance
range of 8 – 25 dBm and the bandwidth of 1.82 – 2.75 GHz, Zg, which is 50 Ω.
24
the proposed rectifier array achieves a high PCE of at least
25 TABLE I
50%. At 2.4 GHz and the input power range of -5.5 – 27.5
26 THE IMPEDANCE OF THE PROPOSED RECTIFIER ARRAY
dBm, the PCE is also higher than 50%. Furthermore, at some
27 Input Power -10 dBm 0 dBm 13 dBm 25 dBm
specific input power levels, the rectifier would also have a
28 Re(ZinA) 193.6 Ω 117.6 Ω 49.5 Ω 37.4 Ω
wider bandwidth. In Section II, theoretical analysis is carried
29 Re(ZinB) 40.8 Ω 70.8 Ω 108.0 Ω 258.8 Ω
out. Section III shows a comparison of the proposed rectifier
30
array with other rectifiers. In section IV, the results of the
31 In addition, the high-power rectifier unit and the low-power
validation experiments are shown and compared with previous
32 rectifier unit have their own optimal input power ranges.
works. Finally, a conclusion is given in Section V.
33 Therefore, the input power range of the two rectifier units will
34 be crossed. By wisely selecting the cross-power Pin', the
35 II. THEORETICAL ANALYSIS
rectifier array can be made to operate in the maximum input
36 The schematic diagram of the proposed rectifier array is
power range. The detailed power distribution approach is
37 shown in Fig. 1, which consists of two rectifier units and an
based on the following ideas.
38 AIPDN matching network. A high PCE is achieved in the
1) When Pin<Pin', more power should be distributed to the
39 broadband and wide input power range. For the convenience
low-power rectifier unit. At this time, the input
40 of the next account, the central frequency is described as fc,
impedance of the low-power rectifier unit ZinB should
41 and the lower and upper limits of frequency of interest are
match with the source impedance Zg, while the input
42 expressed as f1 and f2, respectively.
impedance of the high-power rectifier unit ZinA behaves
43
A. Principle of Power Distribution as a high impedance. Thus,
44
PinA PinA Re( ZinB )
45 High-power unit A  1 (4)
46 PinB Re( ZinA )
Pin
47 2) When Pin and Pin' are approximately equal, the two
48 ZinA rectifier units are distributed to approximately the same
Zin PinB
49 RFin power. Therefore, the choice of P in' should consider the
50 PCE of the two rectifier units at this power, otherwise,
Zg=50Ω
51 the PCE of the rectifier array will be significantly
52 Low-power unit B ZinB decreased around input power Pin'. The power
53 distribution relationship currently follows
54 (a) (b) PinA Re( ZinB )
55  1 (5)
Fig. 2. (a) Principle of power distribution. (b) ZinA and ZinB PinB Re( ZinA )
56
57 vary with input power. 3) When Pin>Pin', as the input power Pin increases, to
58 prevent the low-power rectifier unit from being broken
59
60
Page 3 of 9

1 down, the high-power rectifier unit will receive more are to match the input impedance of the rectifier unit A to 50
2 power. At this time, the input impedance ZinA of the Ω at high input power and to high impedance at low input
3 high-power rectifier unit matches the source impedance power. The proposed triple microstrip lines constitutes an
4 Zg, while the input impedance ZinB of the low-power impedance converter. The previously obtained imaginary part
5 rectifier unit behaves as high impedance. Thus, of Zin3 is compressed close to zero for input power greater than
6
PinA Re( ZinB ) Pin'. The input impedances after each transmission line section
7  1 (6)
PinB Re( ZinA ) are denoted as Zin4, Zin5 and ZinA, respectively. According to
8
the transmission line theory, the following equations can be
9 The values of Re(ZinA) and Re(ZinB) at 2.4 GHz with
obtained
10 different input powers are listed in Table Ⅰ. In addition, the
Z ( f )  jZ1 tan θ1 ( f )
11 ratio of power distribution can be adjusted using the AIPDN Zin 4 ( f )  Z1 in3 , (10)
12 and matching inductance, which will be described in the next Z1  jZin3 ( f ) tan θ1 ( f )
13 section in detail. Zin 4 ( f )  jZ 2 tan θ2 ( f )
14 Zin5 ( f )  Z 2 , (11)
B. Rectifier Design Z 2  jZin 4 ( f ) tan θ2 ( f )
15
16 As shown in the schematic diagram in Fig. 1 of the Zin5 ( f )  jZ3 tan θ3 ( f )
ZinA ( f )  Z3 . (12)
17 proposed broadband and wide input power rectifier array, the Z3  jZin5 ( f ) tan θ3 ( f )
18 rectifier unit consists of a load resistance, a DC-pass filter, a In addition, the frequency ratio k is introduced to simplify
19 Schottky diode, a matching inductance and an AIPDN. the calculation: k = f2/f1. As a result, the relationship between
20 The DC-pass filter serves as two roles to smooth the output the electrical lengths can also be obtained and written as θ(f2)
21 DC and to reflect the fundamental frequency and higher
= kθ(f1). The input impedance Zin4，Zin5，ZinA are presented
22 harmonics back to the diode for rectification again to improve
in the Smith chart and given in Fig.3 for the input power at 0
23 the PCE. In this design, the DC-pass filter consists of an
dBm,8 dBm,13 dBm,25 dBm, respectively.
24 inductance (L) and a capacitor (C), which achieves a
25 broadband range of RF stopband compared to the
26 conventional DC-pass filter with only one capacitor. The cut-
27 off frequency (fcut) of the filter can be derived from the
28 following equation [21]-[22]
29 1
f cut  . (7)
30 2π LC
31 The matching inductance in both rectifier units operates on
32 the same principle. Hence, only the matching inductance of
33 the high-power rectifier unit is used as an example for
34 illustration. Over the frequency band and input power range of
35 interest, an appropriate matching inductance can compensate (a) (b)
36 for the diode's capacitance. Denoting the input impedance of
37 the diode as Zd=Rd-jXd, then Zin3 can be expressed as
38 Z ( Z  Zin 2 )
39 Zin3  in1 d . (8)
40 Zin1  Z d  Zin 2
41 As the DC-pass filter is open to all RF signals, thus Zin1=∞.
42 The matching inductance is used to offset the capacitance of
43 the diode. Ideally, Zin3(f1) and Zin3(f2) should be symmetric
44 about the real axis on the Smith chart, and Zin3(fc) is pure
45 resistance. Thus,
46 Im(Zin3 ( f1 ))   Im(Zin3 ( f 2 )). (9)
47 In the design, the HSMS282B and HSMS286B diodes are, (c) (d)
48 respectively, employed in the high-power rectifier unit A and Fig. 3. Simulated input impedances of rectifier unit A with
49 low-power rectifier unit B. The simulations are carried out in frequency ranging from 1 GHz to 3.5GHz and different input
50 Advanced Design Simulation (ADS) software using power levels (a) 0 dBm. (b) 8dBm. (c) 13dBm. (d) 25dBm.
51 Simulation program with integrated circuit emphasis (SPICE).
52 The simulated results for Zin3 in the Smith chart are shown in For the low-power rectifier unit B, impedance matching in
53 Fig. 3. the low input power range is achieved using only one
54 As part of the AIPDN, three microstrip transmission lines microstrip line. Based on the same analysis as the high-power
55 are used to configure high-power rectifier unit A, and one rectifier unit A, ZinB can be obtained and presented as
56 microstrip line is used to construct low-power rectifier units B. Z ( f )  jZ 4 tan θ4 ( f )
57 For the high-power rectifier unit A, three transmission lines ZinB ( f )  Z 4 in8 . (13)
58 Z 4  jZin8 ( f ) tan θ4 ( f )
59
60
 Page 4 of 9

1 From the above analysis, we can find that three microstrip LL1
2
LL1
lines are used to achieve impedance matching of the high- TL3 TL2 TL1 RFin HSMS
3 RFin HSMS CL1 RL1
282B CL1 RL1 286B
power rectifier, while only one microstrip line is used to L1 Zg=50Ω L1
4
Zg=50Ω

implement impedance matching of the low-power rectifier.

5 The reason is that when both rectifiers achieve the best (a) (b)
6
impedance matching, the PCE at the cross-power Pin’ will be
7 LL1
significantly reduced and impedance matching cannot be
8 TL3 TL2 TL1 C1
achieved in the broadband and wide input power range. HSMS
9 282B CL1 RL1
Therefore, choosing one rectifier unit as the main rectifier unit
10 L1
and tilting more resources to this rectifier unit can achieve RFin
11
impedance matching of the entire rectifier circuit in the LL2
12 Zg=50Ω
broadband and wide input power range. In this design, the TL6 TL5 TL4 C2
13 HSMS
high-power rectifier unit is selected as the main rectifier unit, 286B CL2 RL2
14 L2
and the impedance matching of the low-power rectifier unit is
15
appropriately reduced. The reason for this choice is that when
16
the input power is too low, the rectifier performance will be (c)
17
significantly reduced, and the input power operating range of
18 LL1
the high-power rectifier unit is larger than that of the low-
19 TL3 TL2 TL1 C1
power rectifier unit. The advantages of this design will be HSMS
20 282B CL1 RL1
elaborated in the next section by comparing several rectifiers.
21 L1
The input impedance Zin8 and ZinB with different input power
22 RFin
LL2
levels at 2.4 GHz are analyzed and presented in the Smith
23 Zg=50Ω
chart in Fig.4. TL4 C2
24 HSMS
CL2
286B RL2
25 L2
26
27 (d)
28
Fig. 5. Block diagram of the proposed rectifiers (a) Rec1:
29
high-power rectifier. (b) Rec2: low-power rectifier. (c) Rec3:
30
best-matched rectifier array (d) Pro Rec: rectifier array with
31
AIPDN.
32
33
First, the performance of the proposed four rectifiers is
34
analyzed in terms of reflection coefficient S11. Fig. 6(a) and Fig.
35 (a) (b) 6(b) show the relationship of reflection coefficient S11 versus
36
Fig. 4. Simulated input impedance of rectifier unit B at 2.4 frequency and input power, respectively. It is worth noting that
37
GHz with different input power levels from -10 dBm to 30 the input power is 15 dBm for analyzing the relationship between
38
39 dBm (a) Zin8. (b) ZinB. S11 and frequency, for analyzing the relationship between S11 and
40 input power, the frequency is set to be 2.4 GHz. From Fig. 6(a), it
41 III. SIMULATION AND COMPARISON can be obtained that at an input power of 15 dBm, the S11 > -10
42 dB has the widest bandwidth for the Rec1 composed of high-
In this paper, a compact rectifier array for broadband and wide
43 power rectifier units, followed by the Pro Rec, then the Rec3, and
input power range is proposed. According to the analysis in
44 finally the Rec2 composed of low-power rectifier units. Because
Section II, it is difficult to maintain adaptive power distribution
45 of the higher input power, the S11 of the Rec2 is all greater than -
over a broadband and wide input power range when both rectifier
46 10 dB, which deviates from the low power rectifier's optimal
units are optimally matched. Therefore, to verify the theoretical
47 operating range. Moreover, it can be obtained from Fig. 6(b) that
analysis in Section II, three prototype rectifiers are presented for
48 at 2.4 GHz, the resonance point of the Rec2 is biased towards low
comparisons. Among them, Fig. 5(a) and Fig. 5(b) show two
49 input power direction, and the resonance point of the Rec1 is
rectifiers expand from high-power rectifier unit A and low-power
50 biased towards the high input power direction, and the Rec3 does
rectifier unit B, named as Rec1 and Rec2, respectively. Fig. 5(c)
51 not obtain good resonance at any input power point because it
shows the rectifier array composes of both high-power rectifier
52 destroys the adaptive input power distribution, while the Pro Rec
units A and low-power rectifier units B, which is optimally
53 obtains good reflection coefficient characteristics in a wide input
matched using three microstrip lines and is named Rec3. Fig. 5(d)
54 power range. In summary, the Pro Rec has the best reflection
shows the proposed rectifier array with a name of Pro Rec. The
55 coefficient characteristics at different frequencies and input
F4B substrate with a thickness of 0.762 mm is utilized in all these
56 powers.
designs. All the lumped components involved are Murata, while
57 considering the losses caused by the microstrip lines.
58
59
60
Page 5 of 9

1 power Pin'. The relationship between PCE and input power at 2.4
2 GHz is shown in Fig. 7. The Rec1 obtains the maximum PCE at
3 an input power of 24 dBm and has a PCE greater than 50% at 10
4 – 26 dBm, and the Rec2 obtains the maximum PCE at an input
5 power of 4 dBm and has a PCE greater than 50% at -4 – 9 dBm,
6
and the Rec3 has a PCE greater than 50% in the range of 5 – 26
7
dBm, while the PCE of the Pro Rec is greater than 50% at a
8
frequency of 2.4 GHz with input power of -5.5 – 27.5 dBm. It is
9
notable that the broadband wide input power rectifier array using
10
AIPDN has an input power range at a single frequency point even
11
greater than many dedicated single frequency point wide input
12
power range rectifiers.
13
At last, the performance of the four rectifiers is analyzed more
14
visually using contour plots. Fig. 8 shows the PCE of the four
15
rectifiers versus frequency and input power. From the figures, we
16
can get a conclusion given as follows: the PCE is greater than
17
18
19 (a)
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
(a)
36
37
38 (b)
39 Fig. 6. Simulated reflection coefficient S11 of the rectifiers:
40 Rec1, Rec2, Rec3 and Pro Rec versus (a) operating frequency.
41 (b) input power.
42
43 Secondly, the advantages of the proposed rectifier array are
44 analyzed from the perspective of PCE. Fig. 7(a) and Fig. 7(b)
45 exhibits the PCE of RF-DC versus operating frequency and input
46 power, respectively. From Fig. 7(a), it can be found that the PCE
47 of the Rec1 is greater than 50% at an input power of 15 dBm with
48 a bandwidth of 1.8 – 3.4 GHz. With the increase of input power,
49 the PCE of low power rectifier Rec2 decreases, and the PCE is
50 less than 20% at 15 dBm input power. The PCE of the best-
51 matched rectifier array Rec3 is greater than 50% at a bandwidth
52 of 2 – 2.4 GHz, while the PCE of the proposed broadband and
53 wide input rectifier array Pro Rec has a PCE that is greater than
54 50% at an input power of 15 dBm with a bandwidth of 1.6 – 3.1 (b)
55 GHz. And the fractional bandwidth of Pro Rec is 63.8% and the
56 bandwidth is merely second to the high-power rectifier Rec1. In Fig. 7. Simulated RF-DC PCE of the rectifiers: Rec1, Rec2,
57 addition, the PCE of the Pro Rec has a depression at an input Rec3 and Pro Rec versus (a) operating frequency. (b) input
58 power of 15 dBm because this input power is close to the cross- power.
59
60
 Page 6 of 9

1 50% for Rec1 at input power of 10 – 25 dBm and frequency of 2-

2 3 GHz, and the PCE for Rec2 is greater than 50% for input power
3 of 0 – 9 dBm and frequency of 2.1 – 2.6 GHz, and the PCE for
4 Rec3 is greater than 50% for input power of 8 – 25 dBm and
5 frequency of 2.1 – 2.6 GHz, while the proposed rectifier array
6
using AIPDN in this paper has a PCE greater than 50% at an
7
input power range of 8 – 25 dBm and a bandwidth of 1.82 – 2.75
8
GHz (fractional bandwidth of 40.7%). Summarizing all the above
9
analyses, the proposed rectifier array using a best-matched
10
rectifier unit and an incomplete-matched rectifier unit achieves
11
the characteristics of broadband and wide input power range with
12
no need of additional devices. Furthermore, an ultra-wide input
13
power range at single frequency is realized for the proposed
14
rectifier array using AIPDN.
15
16
17
18
19 (c)
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34 (a)
35
36
37
38 (d)
39 Fig. 8. RF-DC PCE (%) of the rectifiers: Rec1, Rec2, Rec3
40 and Pro Rec versus frequency and input power (a) Rec1. (b)
41 Rec2. (c) Rec3. (d) Pro Rec
42
43 IV. EXPERIMENTAL RESULT
44
45
46 L4
47 L3 C1 LL1 RL1
48 W2 L2
W3
W4
HSMS

49 L1
282B
Lm1
CL1

50 W1
W5
C2 LL2 RL2

51 L5 HSMS CL2
52 286B
Lm2 W1=1.9mm W2=0.3mm W3=0.6mm
53 (b) Metal Via
W4=2.5mm
L1=6.2mm
W5=1.9mm
L2=2.4mm L3=4.65mm
54 L4=10mm L5=2.7mm
C1=C2=15pF LL1=LL2=22nH
55 CL1=CL2=100pF Lm1=4.7nH Lm2=15nH

56 Fig. 9. Layout and parameters of the proposed rectifier array.

57
58
59
60
Page 7 of 9

1 TABLE Ⅱ
2 COMPARISON OF THE PROPOSED RECTIFIER AND RELATED DESIGN
3
4 Reference. [15] [16] [17] [18] [19] [19] [20] [24]
This
5 work
6 NO. of
1 2 2 2 2 2 2 1 2
7 sub-rectifiers
8 Freq.
9 Broadband 2.05 – 2.9 1.7 – 2.9 1.82 –
bandwidth 2 – 3.3
10 and PCE>40% PCE>60% 2.75
(GHz)
11 wide input
Input — — — — —
12 power
power 4 – 19 5 – 17
13 range 4 – 16 8 – 25
range PCE>40% PCE>60%
14 (PCE>50%)
(dBm)
15
16 Single Freq.
5.8 2.45 2 2.4 2.45 2.45 2.45 2.4
17 frequency (GHz)
18 wide input
Input —
19 power
power -3 – 20 -5.5 –
20 range -10 – 25 2.9 – 20.2 2 – 26.5 6.5 – 29.8 -1 – 30 9.9 – 30.8
range PCE>40% 27.5
21 (PCE>50%)
(dBm)
22
23 Dimensions (λg2) 0.67*0.38 1.4*0.75 0.6*0.41 0.4*0.39 0.25*0.24 0.38*0.18 0.35*0.26 0.4*0.23 0.33*0.16
24 Peck PCE (%) 70.2 80.8 76 81.2 74.5 68.5 80.8 76.3 72.1
25 Year 2020 2017 2020 2020 2021 2021 2021 2020 —
26
27 *In [16], the frequency bands can be connected only at a specific input power.
28
29
30 According to the theoretical analysis in the previous maximum value, and 13 dBm is the cross-power Pin' of two
31 sections and to further validate the proposed broadband and rectifier units. At an input power of 13 dBm, there is a slight
32 wide input power rectifier array using AIPDN, it was decrease for the PCE in the operating bandwidth. However,
33 simulated and optimized in ADS, and then fabricated with a the PCE is still better than 50%.
34 prototype given in Fig. 9. The rectifier array is printed on a Fig. 11 shows the variation PCE versus the input power
35 F4B (εr=2.55, tanD=0.002) dielectric substrate with a range at 2.4 GHz. The rectifier array exhibits excellent single
36 thickness of 0.762 mm. It consists of two rectifier units and an frequency wide input power characteristics, showing that the
37 AIPDN matching network and the specific parameters are PCE is greater than 50% over the input power range of -5.5-
38 shown in Fig. 9. The capacitors and inductors used in the 27.5 dBm. Table 2 shows the comparison of the proposed
39 design are Murata's GRM18 series and LQW18 series, rectifier array with some previous related works. The proposed
40 respectively. In addition, HSMS282B and HSMS286B are
41 used for the high and low rectifier units with output loads of
42 200 Ω and 1600 Ω, respectively, while two adjustable
43 resistance boxes are used instead of solder resistance to
44 facilitate adjustment and measurement. The RF-DC PCE can
45 be calculated from the following equation [23]
46 P
2
V  V out 2 .
2

47 PCE (%)  DC  out1 (14)

PRF RL  PRF
48
49 In the experiment, an Agilent PNA-X vector network
50 analyzer is used to get power in place of a signal generator,
51 and a multimeter is used to measure the voltage of two
52 adjustable resistance boxes. In Fig. 10, the PCE of the rectifier
53 array is shown at input powers of 8 dBm, 13 dBm, and 25
54 dBm, respectively. the simulated and measured results are
55 basically consistent. From the above figures, we can get that
56 the PCE of rectifier array is greater than 50% in the range of
57 minimum bandwidth 1.82 – 2.75 GHz, where 8 dBm is the (a)
58 minimum value of wide input power range, 25 dBm is the
59
60
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1 rectifier array has the smallest dimensions and achieves a

2 broadband and wide input power characteristic simultaneously,
3 as well as single frequency wide input power characteristic.
4
5
V. CONCLUSION
6
7 In this paper, a new approach for designing a high-
8 efficiency rectifier array with two rectifier units utilizing
9 AIPDN is proposed, which effectively achieves the broadband
10 and wide input power characteristics as well as the single
11 frequency wide input power characteristics. Based on the
12 proposed method, the rectifier array was fabricated and
13 measured. Furthermore, comparison with high- and low-power
14 rectifiers, best-match rectifier arrays and some previous works
15 is also performed to show the effectiveness of the proposed
16 method in enhancing the bandwidth, the input power range
17 and the single frequency input power range. Such results can
18 (b) find significant potential effect for the RF energy harvest
19 systems.
20
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