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FMH07N90E FUJI POWER MOSFET

Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET

Features Outline Drawings [mm] Equivalent circuit schematic

Maintains both low power loss and low noise TO-3P(Q)
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Drain(D)
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.0±0.5V)
High avalanche durability
Applications Gate(G)
Switching regulators Source(S)
UPS (Uninterruptible Power Supply) GATE
DRAIN

DC-DC converters
SOURCE
JEDEC:TO-3P

Maximum Ratings and Characteristics

Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Symbol Characteristics Unit Remarks
VDS 900 V
Drain-Source Voltage
VDSX 900 V VGS = -30V
Continuous Drain Current ID ±7 A
Pulsed Drain Current I DP ±28 A
Gate-Source Voltage VGS ±30 V
Repetitive and Non-Repetitive Maximum AvalancheCurrent IAR 7 A Note*1
Non-Repetitive Maximum Avalanche Energy E AS 396.3 mJ Note*2
Repetitive Maximum Avalanche Energy E AR 14.5 mJ Note*3
Peak Diode Recovery dV/dt dV/dt 2.1 kV/µs Note*4
Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5
2.5 Ta=25°C
Maximum Power Dissipation PD W
145 Tc=25°C
Tch 150 °C
Operating and Storage Temperature range
Tstg -55 to + 150 °C

Electrical Characteristics at Tc=25°C (unless otherwise specified)

Description Symbol Conditions min. typ. max. Unit
Drain-Source Breakdown Voltage BVDSS I D =250µA, VGS=0V 900 - - V
Gate Threshold Voltage VGS (th) I D =250µA, VDS=VGS 3.5 4.0 4.5 V
VDS=900V, VGS=0V Tch=25°C - - 25
Zero Gate Voltage Drain Current I DSS µA
VDS=720V, VGS=0V Tch=125°C - - 250
Gate-Source Leakage Current I GSS VGS=±30V, VDS=0V - 10 100 nA
Drain-Source On-State Resistance R DS (on) I D =3.5A, VGS=10V - 1.65 2.0 Ω
Forward Transconductance gfs I D =3.5A, VDS=25V 4.2 8.4 - S
Input Capacitance Ciss VDS=25V - 1200 1800
Output Capacitance Coss VGS=0V - 115 175 pF
Reverse Transfer Capacitance Crss f=1MHz - 8.5 13
td(on) Vcc =600V - 33 53
Turn-On Time
tr VGS=10V - 32 45
ns
td(off) I D =3.5A - 110 165
Turn-Off Time
tf RG=36Ω - 32 45
Total Gate Charge QG - 39 59
Vcc =450V
Gate-Source Charge Q GS - 10 15
I D =7A nC
Drain-Source Crossover Charge Q SW - 3.6 5.5
VGS=10V
Gate-Drain Charge Q GD - 15 23
Avalanche Capability IAV L=5.93mH, Tch=25°C 7 - - A
Diode Forward On-Voltage VSD I F=7A, VGS=0V, Tch=25°C - 0.90 1.35 V
Reverse Recovery Time trr I F=7A, VGS=0V - 1.65 - µS
Reverse Recovery Charge Qrr -di/dt=100A/µs, Tch=25°C - 11 - µC

Thermal Characteristics
Description Symbol Test Conditions min. typ. max. Unit
Rth (ch-c) Channel to case 0.862 °C/W
Thermal resistance
Rth (ch-a) Channel to ambient 50.0 °C/W
Note *1 : Tch≤150°C Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *2 : Stating Tch=25°C, IAS=2.8A, L=92.7mH, Vcc=90V, RG =10Ω See to the 'Transient Themal impeadance' graph.
E AS limited by maximum channel temperature and avalanche current. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
See to 'Avalanche current' graph. Note *5 : I F ≤-I D, dv/dt=2.1kV/µs, Vcc≤BVDSS, Tch≤150°C.

1
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FMH07N90E FUJI POWER MOSFET

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Allowable Power Dissipation Safe Operating Area

PD=f(Tc) 2
ID=f(VDS):Duty=0(Single pulse), Tc=25°c
150 10

t=
125
1µs
1
10
10µs
100

100µs
PD [W]

75 10
0

ID [A]
1ms
50
Power loss waveform :
-1
10 Square waveform

25 PD

0 -2
10
0 25 50 75 100 125 150 -1 0 1 2 3
10 10 10 10 10
Tc [°C] VDS [V]
Typical Output Characteristics Typical Transfer Characteristic
ID=f(VDS):80 µs pulse test, Tch=25°C ID=f(VGS):80µs pulse test, VDS=25V, Tch=25 °C
12 100

20V
10 10V
7.0V

10
8 6.0V
ID[A]
ID [A]

1
4
VGS=5.5V

2
0.1

0
0 1 2 3 4 5 6 7 8 9 10
0 4 8 12 16 20 24
VGS[V]
VDS [V]
Typical Transconductance Typical Drain-Source on-state Resistance
gfs=f(ID):80µs pulse test, VDS=25V, Tch=25 °C RDS(on)=f(ID):80µs pulse test, Tch=25 °C
100 3.2

VGS=5.5V
6V

2.8

10
2.4
RDS(on) [ Ω ]

7V
gfs [S]

10V
20V
2.0

1.6

0.1 1.2
0 2 4 6 8 10
0.1 1 10 100
ID [A] ID [A]

2
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FMH07N90E FUJI POWER MOSFET

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Drain-Source On-state Resistance Gate Threshold Voltage vs. Tch

RDS(on)=f(Tch):ID=3.5A, VGS=10V VGS(th)=f(Tch):VDS=VGS, ID=250µA
8

6
7

5
6

VGS(th) [V]
4 max.
RDS(on) [ Ω ]

typ.
4
3
min.
max. 3
2
typ. 2

1
1

0 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tch [°C]
Tch [°C]

Typical Gate Charge Characteristics Typical Capacitance

VGS=f(Qg):ID=7A, Tch=25°C C=f(VDS):VGS=0V, f=1MHz
14 4
10

Vcc= 120V
12 450V
720V
3
10 Ciss
10

8
C [pF]
VGS [V]

2
10
6
Coss

4
1
10

2
Crss

0 0
10
0 10 20 30 40 50 60 10
-2
10
-1
10
0 1
10
2
10
Qg [nC] VDS [V]

Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID

IF=f(VSD):80 µs pulse test, Tch=25 °C t=f(ID):Vcc=600V, VGS=10V, RG=36Ω
100
3
10

tf

10

td(off)
2
10
IF [A]

1 td(on)
t [ns]

tr

1
10
0.1

0.01 0
10
0.00 0.25 0.50 0.75 1.00 1.25 1.50 -1 0 1 2
10 10 10 10
VSD [V] ID [A]
3
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FMH07N90E FUJI POWER MOSFET

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Maximum Avalanche Energy vs. starting Tch Maximum Transient Thermal Impedance
E(AV)=f(starting Tch):Vcc=90V, I(AV)<=7A Zth(ch-c)=f(t):D=0
400 101
IAS=2.8A
350
100
300

Zth(ch-c) [˚C/W]
250 IAS=4.2A 10-1
EAV [mJ]

200
10-2

150
IAS=7.0A

10-3
100
10-6 10-5 10-4 10-3 10-2 10-1 100
t [sec]
50

0
0 25 50 75 100 125 150
starting Tch [°C]

4
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WARNING

1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.

2. A
 ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd.
is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.

3. A lthough Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.

4. T
 he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Systems Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment

7. Copyright ©1996-2008 by Fuji Electric Systems Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Systems Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Systems Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Systems Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.

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